CN1217398C - Control chip for daily monitoring for rapid theremal annealing process - Google Patents
Control chip for daily monitoring for rapid theremal annealing process Download PDFInfo
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- CN1217398C CN1217398C CN 02137394 CN02137394A CN1217398C CN 1217398 C CN1217398 C CN 1217398C CN 02137394 CN02137394 CN 02137394 CN 02137394 A CN02137394 A CN 02137394A CN 1217398 C CN1217398 C CN 1217398C
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Abstract
The present invention provides a control chip for daily monitoring for a rapid thermal annealing technique. The present invention comprises a silicon base, a silica white layer and a polycrystalline silicon layer without a fixed shape, wherein the silica white layer is formed on the surface of the silicon base, the polycrystalline silicon layer without the fixed shape is formed on the surface of the silica white layer, and the inside is adulterated with an arsenic ion.
Description
Technical field
The present invention is particularly to a kind of control sheet material of monitoring every day of rapid thermal anneal process relevant for a kind of method for supervising every day of rapid thermal anneal process, and it is recyclable to reduce control sheet cost.
Background technology
Be applied to rapid hot technics (the rapid thermal process of many semiconductor technologies, RTP), include rapid thermal oxidation (rapid thermal oxidation, RTO), rapid heat chemical vapour deposition (thermal CVD, RTCVD), rapid thermal annealing (rapid thermal annealing, several technologies such as RTA), wherein RTO is mainly used in the growth thin dielectric layer, and RTCVD is mainly used in the deposition of handling amorphous silicon, multi-crystal silicification tungsten and silicon dioxide.Be mainly used in hot-fluid and the hot-fluid again of reaction, the BPSG of the growth of tempering after ion is implanted, lock oxide layer and tempered metal silicide as for RTA, can make the lattice rearrangement and eliminate stress concentrated, because efficient and the quality of RTA are higher, have that annealing time is short, heat budget is less, oxide layer piles up advantages such as error is less, therefore implant in the cycle of annealing at present ion, RTA has replaced traditional boiler tube annealing way.
Generally speaking, in the disk sheet that silicon crystal bar cut out, concentrate on one section of the centre of silicon wafer rod, the better person of quality is called the production disk, more senior person is called disk of heap of stone, and as for the disk that is cut out by head, tail two ends, the ratio that flaw occurs is higher, be used as nonproductive purposes mostly, be called the test disk.Before the semiconductor wafer in-plant equipment is produced, all need to test the stable process conditions that disk comes measurement equipment, for example: furnace tube temperature, metal level, chemical concentration, deposit thickness, the test disk after the measurement can be scrapped usually.
For ion is implanted annealing device, before carrying out RTA technology every day, must measure temperature and thin layer resistance (sheet resistance, Rs) etc. parameter is with as the monitoring foundation, and every day, method for supervising was to adopt N type disk (for example: the silicon wafer that is doped with the boron ion) as a control sheet (monitor wafer), to the control sheet finish RTA technology with and after relevant monitoring parameter measures, then this control sector-meeting is to scrap processing.Because the use amount of control sheet is big and can't recycle, its spent cost of manufacture is quite big, needs a kind of returnable control sheet of exploitation at present badly.
Summary of the invention
Main purpose of the present invention is to propose a kind of control sheet of monitoring every day of rapid thermal anneal process, includes a silicon base; One silica layer is formed on the silicon base surface; And an amorphous polycrystalline silicon layer, be formed on this silicon oxide layer surface, and inside is doped with an arsenic ion.After the RTA monitoring measurement of finishing the control sheet, silicon oxide layer and amorphous polycrystalline silicon layer can be removed, with recycling control sheet.
Another main purpose of the present invention is to propose a kind of method of monitoring every day of rapid thermal anneal process, includes the following step: provide a silicon base; On the silicon base surface, form one silica layer; On the silicon oxide layer surface, form an amorphous polycrystalline silicon layer; Carry out implanting ions technology, with the arsenic ion that in the amorphous polycrystalline silicon layer, mixes; And carry out rapid thermal anneal process, with the temperature of measurement amorphous polycrystalline silicon layer and the relation of resistance value.After finishing the RTA monitoring measurement, silicon oxide layer and amorphous polycrystalline silicon layer can be removed, with the recycling silicon base.
Another feature of the present invention is, provides silicon oxide layer in amorphous polycrystalline silicon layer bottom, can keep out ions diffusion to silicon base.
Of the present inventionly one be characterised in that again, after finishing RTA monitoring measurement every day, amorphous polycrystalline silicon layer and silicon oxide layer can be removed, then can reclaim and use the control sheet, and then reach the purpose that reduces control sheet material cost.
Description of drawings
Figure 1A to 1D has shown that the present invention is used in the control sheet profile of RTA monitoring program every day.
Fig. 2 A shows the relation of the thickness of temperature (T), thin layer resistance (Rs) and the amorphous polycrystalline silicon layer of controlling sheet.
The relation of the thickness of the temperature (T) of Fig. 2 B demonstration control sheet, the uniformity of Rs and amorphous polycrystalline silicon layer.
Embodiment
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail below:
See also Figure 1A to 1D, it shows that the present invention is used in the control sheet profile of RTA monitoring program every day.At first, shown in Figure 1A, provide one to be used in the control sheet 10 that RTA monitors every day, it includes a silicon base 12, an one silica layer 14 and an amorphous polysilicon (amorphous polysilicon) layer 16.Wherein, the making of silicon oxide layer 14 can be adopted thermal oxidation method or chemical vapor deposition (CVD) technology, and its THICKNESS CONTROL is 1000 ~ 2000 .The making of amorphous polycrystalline silicon layer 16 can be adopted low-pressure chemical vapor deposition (LPCVD) technology, by silicomethane (SiH
4) mode through adding thermal dissociation deposits, and can exist with the kenel of noncrystalline (amorphous) being lower than the siliceous deposits that (being about 530 ℃) obtained below 575 ℃ the heating-up temperature, its THICKNESS CONTROL is 1900 ~ 2100 .
Then, shown in Figure 1B, amorphous polycrystalline silicon layer 16 is carried out the doping process 18 of arsenic (As) ion, it is that 30KeV, ion doping concentration are 8E15 ion/cm that its ion is implanted energy
2Then, shown in Fig. 1 C, control sheet 10 is carried out RTA technology 20, so that carry out follow-up monitoring measurement.At last, shown in Fig. 1 D, the control sheet 10 of finishing monitoring measurement can carry out reclaimer, after the amorphous polycrystalline silicon layer 16 of the silicon oxide layer 14 on surface and dopant ion is removed, just recyclable re-using, to reduce the material cost of control sheet 10.
Fig. 2 A shows the temperature (T), thin layer resistance of control sheet, and (sheet resistance is Rs) with the relation of the thickness of amorphous polycrystalline silicon layer.The relation of the thickness of the temperature (T) of Fig. 2 B demonstration control sheet, the uniformity of Rs and amorphous polycrystalline silicon layer.By experimental data as can be known; along with temperature increases; the resistance that is measured can be certain proportion and descend; and no matter the thickness of amorphous polycrystalline silicon layer is 1900 , 2000 or 2100 ; when temperature rose to 950 ℃ process by 825 ℃ in, resistance was roughly the same by the decline ratio that 500ohms/sq reduces to 200ohms/sq.In addition, the uniformity of the Rs of control sheet inside is about 0.8 ~ 1.1%, and the uniformity of the Rs between control sheet and the control sheet is about 0.82%
Compared to known technology, the present invention provides the amorphous polycrystalline silicon layer 16 of arsenic doped ion to carry out RTA monitoring measurement every day on the surface of control sheet 10, and the silicon oxide layer 14 of amorphous polycrystalline silicon layer 16 bottoms is enough kept out ions diffusion to silicon base 12, therefore after finishing RTA monitoring measurement every day, amorphous polycrystalline silicon layer 16 and silicon oxide layer 14 can be removed, then can reclaim and use control sheet 10, and then reach the purpose that reduces control sheet material cost.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; anyly be familiar with present technique field person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the accompanying Claim book scope person of defining.
Claims (10)
1. the control sheet of the every day of rapid thermal anneal process monitoring includes:
One silicon base;
One silica layer is formed on this silicon base surface; And
One amorphous polycrystalline silicon layer be formed on this silicon oxide layer surface, and inside is doped with arsenic ion.
2. the control sheet of the monitoring every day of rapid thermal anneal process as claimed in claim 1 is characterized in that the thickness of this silicon oxide layer is 1000 ~ 2000 .
3. the control sheet of the monitoring every day of rapid thermal anneal process as claimed in claim 1 is characterized in that the thickness of this amorphous polycrystalline silicon layer is 1900 ~ 2100 .
4. the control sheet of the monitoring every day of rapid thermal anneal process as claimed in claim 1 is characterized in that, after the monitoring measurement of finishing this control sheet, this silicon oxide layer and this amorphous polycrystalline silicon layer can be removed, should the control sheet with recycling.
5. the method for the every day of rapid thermal anneal process monitoring includes the following step:
One silicon base is provided;
On this silicon base surface, form one silica layer;
On this silicon oxide layer surface, form an amorphous polycrystalline silicon layer;
Carry out implanting ions technology, with arsenic doped ion in this amorphous polycrystalline silicon layer; And
Carry out rapid thermal anneal process, with the temperature that measures this amorphous polycrystalline silicon layer and the relation of resistance value.
6. the method for the monitoring every day of rapid thermal anneal process as claimed in claim 5 is characterized in that the making of this silicon oxide layer can be adopted thermal oxidation method or chemical vapor deposition method.
7. the method for the monitoring every day of rapid thermal anneal process as claimed in claim 5 is characterized in that the thickness of this silicon oxide layer is 1000 ~ 2000 .
8. the method for the monitoring every day of rapid thermal anneal process as claimed in claim 5 is characterized in that the making of this amorphous polycrystalline silicon layer can be adopted low-pressure chemical vapor deposition process.
9. the method for the monitoring every day of rapid thermal anneal process as claimed in claim 5 is characterized in that the thickness of this amorphous polycrystalline silicon layer is 1900 ~ 2100 .
10. the method for the every day of rapid thermal anneal process as claimed in claim 5 monitoring, wherein after the relation of temperature that measures this amorphous polycrystalline silicon layer and resistance value, this silicon oxide layer and this amorphous polycrystalline silicon layer can be removed, with this silicon base of recycling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02137394 CN1217398C (en) | 2002-10-11 | 2002-10-11 | Control chip for daily monitoring for rapid theremal annealing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02137394 CN1217398C (en) | 2002-10-11 | 2002-10-11 | Control chip for daily monitoring for rapid theremal annealing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1489194A CN1489194A (en) | 2004-04-14 |
| CN1217398C true CN1217398C (en) | 2005-08-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 02137394 Expired - Lifetime CN1217398C (en) | 2002-10-11 | 2002-10-11 | Control chip for daily monitoring for rapid theremal annealing process |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101312139B (en) * | 2007-05-22 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | Polycrystalline silicon film resistance value test method |
| CN102623366B (en) * | 2011-01-27 | 2014-10-29 | 无锡华润上华半导体有限公司 | Method for monitoring annealing process temperature |
| CN104078376A (en) * | 2014-08-04 | 2014-10-01 | 上海华力微电子有限公司 | Control wafer for furnace tube high-temperature annealing process, manufacturing method and monitoring method |
| CN104377147B (en) * | 2014-11-27 | 2017-11-14 | 株洲南车时代电气股份有限公司 | A kind of recycling method of ion implanting monitoring piece |
| CN106783545A (en) * | 2016-12-26 | 2017-05-31 | 南京国盛电子有限公司 | A kind of adjusting method of flat board epitaxial furnace thermal field |
| CN115692236A (en) * | 2022-12-16 | 2023-02-03 | 广州粤芯半导体技术有限公司 | Method for detecting RTA temperature in silicade process |
-
2002
- 2002-10-11 CN CN 02137394 patent/CN1217398C/en not_active Expired - Lifetime
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| CN1489194A (en) | 2004-04-14 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111129 |
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Effective date of registration: 20111129 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
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