CN120712638A - 处理方法、处理装置、半导体装置的制造方法以及程序 - Google Patents

处理方法、处理装置、半导体装置的制造方法以及程序

Info

Publication number
CN120712638A
CN120712638A CN202380094083.2A CN202380094083A CN120712638A CN 120712638 A CN120712638 A CN 120712638A CN 202380094083 A CN202380094083 A CN 202380094083A CN 120712638 A CN120712638 A CN 120712638A
Authority
CN
China
Prior art keywords
film
gas
cleaning
process according
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380094083.2A
Other languages
English (en)
Chinese (zh)
Inventor
小川有人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of CN120712638A publication Critical patent/CN120712638A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
CN202380094083.2A 2023-06-29 2023-06-29 处理方法、处理装置、半导体装置的制造方法以及程序 Pending CN120712638A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/024287 WO2025004295A1 (ja) 2023-06-29 2023-06-29 処理方法、処理装置、半導体装置の製造方法及びプログラム

Publications (1)

Publication Number Publication Date
CN120712638A true CN120712638A (zh) 2025-09-26

Family

ID=93938195

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380094083.2A Pending CN120712638A (zh) 2023-06-29 2023-06-29 处理方法、处理装置、半导体装置的制造方法以及程序

Country Status (6)

Country Link
US (1) US20260026280A1 (https=)
JP (1) JPWO2025004295A1 (https=)
KR (1) KR20260028662A (https=)
CN (1) CN120712638A (https=)
TW (1) TW202507044A (https=)
WO (1) WO2025004295A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302560A (ja) * 1993-04-16 1994-10-28 Hitachi Ltd 銅又は銅合金のエッチング方法
US6821899B2 (en) * 2003-03-14 2004-11-23 Lam Research Corporation System, method and apparatus for improved local dual-damascene planarization
US7540935B2 (en) * 2003-03-14 2009-06-02 Lam Research Corporation Plasma oxidation and removal of oxidized material
EP3933892A4 (en) * 2019-03-01 2022-11-09 Central Glass Company, Limited DRY ETCHING METHOD, METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND ETCHING DEVICE
JP7664085B2 (ja) * 2021-05-28 2025-04-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Also Published As

Publication number Publication date
TW202507044A (zh) 2025-02-16
WO2025004295A1 (ja) 2025-01-02
US20260026280A1 (en) 2026-01-22
KR20260028662A (ko) 2026-03-04
JPWO2025004295A1 (https=) 2025-01-02

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