TW202507044A - 處理方法、處理裝置、半導體裝置之製造方法及程式 - Google Patents

處理方法、處理裝置、半導體裝置之製造方法及程式 Download PDF

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Publication number
TW202507044A
TW202507044A TW113121143A TW113121143A TW202507044A TW 202507044 A TW202507044 A TW 202507044A TW 113121143 A TW113121143 A TW 113121143A TW 113121143 A TW113121143 A TW 113121143A TW 202507044 A TW202507044 A TW 202507044A
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TW
Taiwan
Prior art keywords
film
gas
processing
wafer
cleaning
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Application number
TW113121143A
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English (en)
Chinese (zh)
Inventor
小川有人
Original Assignee
日商國際電氣股份有限公司
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Application filed by 日商國際電氣股份有限公司 filed Critical 日商國際電氣股份有限公司
Publication of TW202507044A publication Critical patent/TW202507044A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
TW113121143A 2023-06-29 2024-06-07 處理方法、處理裝置、半導體裝置之製造方法及程式 TW202507044A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2023/024287 2023-06-29
PCT/JP2023/024287 WO2025004295A1 (ja) 2023-06-29 2023-06-29 処理方法、処理装置、半導体装置の製造方法及びプログラム

Publications (1)

Publication Number Publication Date
TW202507044A true TW202507044A (zh) 2025-02-16

Family

ID=93938195

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113121143A TW202507044A (zh) 2023-06-29 2024-06-07 處理方法、處理裝置、半導體裝置之製造方法及程式

Country Status (6)

Country Link
US (1) US20260026280A1 (https=)
JP (1) JPWO2025004295A1 (https=)
KR (1) KR20260028662A (https=)
CN (1) CN120712638A (https=)
TW (1) TW202507044A (https=)
WO (1) WO2025004295A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302560A (ja) * 1993-04-16 1994-10-28 Hitachi Ltd 銅又は銅合金のエッチング方法
US6821899B2 (en) * 2003-03-14 2004-11-23 Lam Research Corporation System, method and apparatus for improved local dual-damascene planarization
US7540935B2 (en) * 2003-03-14 2009-06-02 Lam Research Corporation Plasma oxidation and removal of oxidized material
EP3933892A4 (en) * 2019-03-01 2022-11-09 Central Glass Company, Limited DRY ETCHING METHOD, METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND ETCHING DEVICE
JP7664085B2 (ja) * 2021-05-28 2025-04-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Also Published As

Publication number Publication date
WO2025004295A1 (ja) 2025-01-02
US20260026280A1 (en) 2026-01-22
CN120712638A (zh) 2025-09-26
KR20260028662A (ko) 2026-03-04
JPWO2025004295A1 (https=) 2025-01-02

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