JPWO2025004295A1 - - Google Patents
Info
- Publication number
- JPWO2025004295A1 JPWO2025004295A1 JP2025529147A JP2025529147A JPWO2025004295A1 JP WO2025004295 A1 JPWO2025004295 A1 JP WO2025004295A1 JP 2025529147 A JP2025529147 A JP 2025529147A JP 2025529147 A JP2025529147 A JP 2025529147A JP WO2025004295 A1 JPWO2025004295 A1 JP WO2025004295A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3451—Structure
- H10P14/3452—Microstructure
- H10P14/3454—Amorphous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3451—Structure
- H10P14/3452—Microstructure
- H10P14/3456—Polycrystalline
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2023/024287 WO2025004295A1 (ja) | 2023-06-29 | 2023-06-29 | 処理方法、処理装置、半導体装置の製造方法及びプログラム |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025004295A1 true JPWO2025004295A1 (https=) | 2025-01-02 |
Family
ID=93938195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025529147A Pending JPWO2025004295A1 (https=) | 2023-06-29 | 2023-06-29 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20260026280A1 (https=) |
| JP (1) | JPWO2025004295A1 (https=) |
| KR (1) | KR20260028662A (https=) |
| CN (1) | CN120712638A (https=) |
| TW (1) | TW202507044A (https=) |
| WO (1) | WO2025004295A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06302560A (ja) * | 1993-04-16 | 1994-10-28 | Hitachi Ltd | 銅又は銅合金のエッチング方法 |
| US6821899B2 (en) * | 2003-03-14 | 2004-11-23 | Lam Research Corporation | System, method and apparatus for improved local dual-damascene planarization |
| US7540935B2 (en) * | 2003-03-14 | 2009-06-02 | Lam Research Corporation | Plasma oxidation and removal of oxidized material |
| EP3933892A4 (en) * | 2019-03-01 | 2022-11-09 | Central Glass Company, Limited | DRY ETCHING METHOD, METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND ETCHING DEVICE |
| JP7664085B2 (ja) * | 2021-05-28 | 2025-04-17 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
-
2023
- 2023-06-29 JP JP2025529147A patent/JPWO2025004295A1/ja active Pending
- 2023-06-29 CN CN202380094083.2A patent/CN120712638A/zh active Pending
- 2023-06-29 KR KR1020257032431A patent/KR20260028662A/ko active Pending
- 2023-06-29 WO PCT/JP2023/024287 patent/WO2025004295A1/ja not_active Ceased
-
2024
- 2024-06-07 TW TW113121143A patent/TW202507044A/zh unknown
-
2025
- 2025-09-25 US US19/340,286 patent/US20260026280A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202507044A (zh) | 2025-02-16 |
| WO2025004295A1 (ja) | 2025-01-02 |
| US20260026280A1 (en) | 2026-01-22 |
| CN120712638A (zh) | 2025-09-26 |
| KR20260028662A (ko) | 2026-03-04 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260323 |