CN1205455C - 半导体处理液用的冷却加热装置 - Google Patents
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- 239000007788 liquid Substances 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 73
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/02—Constructions of heat-exchange apparatus characterised by the selection of particular materials of carbon, e.g. graphite
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F19/00—Preventing the formation of deposits or corrosion, e.g. by using filters or scrapers
- F28F19/02—Preventing the formation of deposits or corrosion, e.g. by using filters or scrapers by using coatings, e.g. vitreous or enamel coatings
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/06—Constructions of heat-exchange apparatus characterised by the selection of particular materials of plastics material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S165/00—Heat exchange
- Y10S165/905—Materials of manufacture
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Abstract
提供一种对腐蚀性溶液抗蚀性高、不担心有害杂质溶出的半导体处理液用的冷却加热装置。该冷却加热装置包括与半导体处理液接触以将其加热或冷却的热交换基板(3),通过在石墨基板(3A)与处理液接触的侧面上直接热粘接氟树脂片(3B)形成该热交换基板(3)。
Description
技术领域
本发明涉及在半导体处理所用的腐蚀液的温度控制用恒温装置的冷却加热部分适用的冷却加热装置。
背景技术
在具有热交换基板的传统半导体处理液用的冷却处理装置中,其中该热交换基板用于冷却、加热腐蚀性半导体处理液并将其保持预定温度,该热交换基板一般多通过在不锈钢板或石墨基板的处理液接触的一侧上,通过环氧系树脂或其它粘接剂构成的粘接层粘接经等离子体或钠腐蚀处理过的氟树脂(商品名Teflon,德弗隆)片而构成。可是,在这些传统的热交换基板上,在浸透性高的溶液冷却或加热时,即使一点点浸透氟树脂片,也有可能从上述不锈钢板或石墨基板和片之间的粘接层溶出粘接剂,尤其在使用不锈钢板的情况下,伴随粘接剂的溶出不锈钢被溶液腐蚀,有时金属离子作为杂质进入该溶液内。这说明问题在于:在任何一种情况下,可以使用的溶液等受粘接剂的耐热温度所制约。
发明内容
本发明的目的在于提供一种半导体处理液用的冷却加热装置,该装置具有对腐蚀性溶液的耐蚀性强、不担心重金属离子等的有害杂质溶出的热交换基板。
为了实现上述目的,本发明的第1种半导体处理液用的冷却加热装置,包括接触半导体处理液而将该半导体处理液冷却或加热的热交换基板,其特征在于:通过在石墨基板与处理液接触的侧面上热粘接氟树脂片形成上述热交换基板。
此外,本发明的第2种半导体处理液用的冷却加热装置,包括接触半导体处理液而将该半导体处理液冷却或加热的热交换基板,其特征在于:通过在石墨基板与处理液接触的侧面上设置无定形碳,并在该无定形碳层上热粘接氟树脂片形成热交换基板。
本发明的第3种半导体处理液用的冷却加热装置,包括接触半导体处理液而将该半导体处理液冷却或加热的热交换基板,其特征在于:通过在玻璃状碳基板与处理液接触的侧面上热粘接氟树脂片形成上述热交换基板。
本发明的第4种半导体处理液用的冷却加热装置,包括接触半导体处理液而将该半导体处理液冷却或加热的热交换基板,其特征在于:通过在碳化硅基板与处理液接触的侧面上热粘接氟树脂片形成上述热交换基板。
本发明的第5种半导体处理液用的冷却加热装置,包括接触半导体处理液而将该半导体处理液冷却或加热的热交换基板,其特征在于:通过在石墨基板与处理液接触的侧面上设置碳化硅层,并在该碳化硅层上热粘接氟树脂片形成上述热交换基板。
因具有上述结构的本发明半导体处理液用的冷却加热装置,是通过对热交换基板在对溶液抗蚀性卓越的石墨基板、玻璃状碳基板或碳化硅基板的与处理液接触的侧面上直接热粘接氟树脂片,或者通过在石墨基板或碳化硅层与处理液接触的侧面上设置无定形碳层,并在该无定形碳层上直接热粘接氟树脂片构成,所以不担心因溶液引起粘接层腐蚀而溶出有害杂质,而且能够防止因基体本身的腐蚀造成重金属离子等有害杂质的溶出。
附图说明
图1是本发明的半导体处理液用的冷却加热装置的局部剖视图。
图2是表示热交换基板的放大剖面图。
图3是表示热交换基板其它结构的放大剖面图。
图4是表示热交换基板其它结构的放大剖面图。
图5是表示热交换基板其它结构的放大剖面图。
图6是表示热交换基板其它结构的放大剖面图。
具体实施方式
图1示出本发明的半导体处理液用的冷却加热装置的第1实施例。上述该冷却加热装置1用于半导体处理液之类的腐蚀性溶液的温度控制,简言之如图1所示地通过从溶液容器(未图示)内导出的半导体处理液经过由抗蚀性优良的氟树脂形成的导管5A导入冷却加热室2内,该冷却加热室2与热交换基板3处于对置状态对上述半导体处理液进行温度控制。
如图1所示,上述冷却加热室2是这样构成的:即由石墨基板3A在其与处理液接触侧热粘接氟树脂片3B而形成热交换基板3(参照图2),由氟树脂形成的侧壁4对置状态设置,在其两侧开口端分别连接用氟树脂形成的半导体处理液导入侧和导出侧导管5A,5B。
而且在上述冷却加热室1的各自的热交换基板3、3的外侧壁上通过这些热交换基板3分别粘合固定用于冷却加热半导体处理液的热组件6,在冷却半导体处理液的情况下在该热组件6上分别粘合固定散热板,通过经冷却导管导入冷却水促进该热组件6的散热。
在具有上述结构的半导体处理液用的冷却加热装置1,半导体处理液经导管5导入冷却加热室2内,在该冷却加热室2内冷却或加热到一定温度。由于这时上述热交换基板3通过在抗蚀性优良的石墨基板3A上热粘结氟树脂片3B形成,所以在氟树脂片3B上即使浸透腐蚀性的半导体处理液也不担心有害杂质的溶出,而且因为在这些石墨基板3A和氟树脂片3B的粘接面上未使用粘接剂,所以其耐热温度与粘接剂的耐热温度无关,所以可以上升到与半导体处理液接触的氟树脂片3B的耐热温度。
在该冷却加热室2内控制在一定温度的半导体处理液经导管5B被输出。
如上所述,如果采用上述半导体处理液用的冷却加热装置1,则因为热交换基板3仅由抗蚀性卓越的石墨以及氟树脂构成,所以不担心由半导体处理液一类腐蚀性溶液对粘接层腐蚀产生的有害杂质的溶出,而且能够防止因基体3自身的腐蚀产生的有害杂质的溶出。
作为构成上述冷却加热装置1的冷却加热室的热交换基板3,可采用如图3到图6所示构造。
首先,图3所示的热交换基板13通过在石墨基板13A与处理液接触的侧面进行热处理形成无定形碳层13C,并在该无定形碳层13C上热粘接氟树脂片13B而形成。
图4所示的热交换基板23是通过在玻璃状碳素基板23A与处理液接触的侧面上直接热粘接氟树脂片23B而形成。
图5所示的热交换基板33是通过在碳化硅基板33A与处理液接触的侧面上直接热粘接氟树脂片33B形成的。
图6所示的热交换基板43是通过在石墨基板43A与处理液接触的侧面上设置碳化硅层43D,并在该碳化硅层43D上直接热粘接氟树脂43B形成的。
在这里,上述图2-图6所示的热交换基板的其它结构的形式及其作用与图1及图2说明的冷却加热装置1的冷却室2的热交换基板3在本质上相同,所以省略其说明。
如上详述,如果采用本发明的半导体处理液用的冷却加热装置,则因为在对溶液极强腐蚀的石墨基板、玻璃状碳基板或碳化硅基板与处理液接触的侧面上直接热粘接氟树脂片形成热交换基板,所以不担心因基体本身的腐蚀引起的有害杂质的溶出。
Claims (5)
1.一种半导体处理液用的冷却加热装置,包括接触半导体处理液而将该半导体处理液冷却或加热的热交换基板,其特征在于:
通过在石墨基板与处理液接触的侧面上热粘接氟树脂片形成上述热交换基板。
2.一种半导体处理液用的冷却加热装置,包括接触半导体处理液而将该半导体处理液冷却或加热的热交换基板,其特征在于:
通过在石墨基板与处理液接触的侧面上设置无定形碳层,并在该无定形碳层上热粘接氟树脂片形成上述热交换基板。
3.一种半导体处理液用的冷却加热装置,包括接触半导体处理液而将该半导体处理液冷却或加热的热交换基板,其特征在于:
通过在玻璃状碳素基板与处理液接触的侧面上热粘接氟树脂片而形成上述热交换基板。
4.一种半导体处理液用的冷却加热装置,包括接触半导体处理液而将该半导体处理液冷却或加热的热交换基板,其特征在于:
通过在碳化硅基板与处理液接触的侧面上热粘接氟树脂片而形成上述热交换基板。
5.一种半导体处理液用的冷却加热装置,包括接触半导体处理液而将该半导体处理液冷却或加热的热交换基板,其特征在于:
通过在石墨基板与处理液接触的侧面上设置碳化硅层,并在该碳化硅层上热粘接氟树脂片而形成上述热交换基板。
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Application Number | Priority Date | Filing Date | Title |
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JP145439/98 | 1998-05-27 | ||
JP14543998A JP3968610B2 (ja) | 1998-05-27 | 1998-05-27 | 半導体処理液用冷却加熱装置 |
JP145439/1998 | 1998-05-27 |
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CN1236889A CN1236889A (zh) | 1999-12-01 |
CN1205455C true CN1205455C (zh) | 2005-06-08 |
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US (1) | US6347661B2 (zh) |
JP (1) | JP3968610B2 (zh) |
KR (1) | KR100329489B1 (zh) |
CN (1) | CN1205455C (zh) |
DE (1) | DE19922397B4 (zh) |
GB (1) | GB2337812B (zh) |
TW (1) | TW406181B (zh) |
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JP3462469B2 (ja) * | 2000-12-15 | 2003-11-05 | Smc株式会社 | 円形冷却プレート用異形サーモモジュール及びそれを用いた円形冷却プレート |
JP4421100B2 (ja) * | 2000-12-21 | 2010-02-24 | 不二越機械工業株式会社 | シリコンウェーハの研磨砥粒液の温度調整方法 |
US7218523B2 (en) * | 2003-09-10 | 2007-05-15 | Qnx Cooling Systems Inc | Liquid cooling system |
US7508672B2 (en) * | 2003-09-10 | 2009-03-24 | Qnx Cooling Systems Inc. | Cooling system |
JP2007240035A (ja) * | 2006-03-06 | 2007-09-20 | Tokyo Electron Ltd | 冷却加熱装置及び載置装置 |
WO2007107024A1 (de) * | 2006-03-17 | 2007-09-27 | Doikos Investments Ltd. | Flüssigkeitsgekühlter rost mit verschleissplatten |
KR100877574B1 (ko) * | 2006-12-08 | 2009-01-08 | 한국원자력연구원 | 원자력 수소생산용 고온, 고압 및 내식성 공정 열교환기 |
JP5035719B2 (ja) * | 2007-03-30 | 2012-09-26 | Smc株式会社 | 薬液用熱交換器及びそれを用いた薬液用温度調節装置 |
US20110186267A1 (en) * | 2010-02-01 | 2011-08-04 | Suna Display Co. | Heat transfer device with anisotropic thermal conducting micro structures |
DE102010030780A1 (de) * | 2010-06-30 | 2012-01-05 | Sgl Carbon Se | Wärmeübertragungselement für einen Wärmeübertrager, Verfahren zum Herstellen eines Wärmeübertragungselements für einen Wärmeübertrager, Wärmeübertrager und Nachrüstverfahren für einen Wärmeübertrager |
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JP6034231B2 (ja) | 2012-07-25 | 2016-11-30 | 株式会社Kelk | 半導体製造装置用温度調整装置、半導体製造におけるpid定数演算方法、及び半導体製造装置用温度調整装置の運転方法 |
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-
1998
- 1998-05-27 JP JP14543998A patent/JP3968610B2/ja not_active Expired - Lifetime
-
1999
- 1999-04-16 TW TW088106156A patent/TW406181B/zh not_active IP Right Cessation
- 1999-04-19 US US09/293,875 patent/US6347661B2/en not_active Expired - Lifetime
- 1999-05-14 DE DE19922397A patent/DE19922397B4/de not_active Expired - Fee Related
- 1999-05-18 GB GB9911562A patent/GB2337812B/en not_active Expired - Fee Related
- 1999-05-25 CN CNB991070356A patent/CN1205455C/zh not_active Expired - Fee Related
- 1999-05-25 KR KR1019990018811A patent/KR100329489B1/ko not_active IP Right Cessation
Also Published As
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---|---|
TW406181B (en) | 2000-09-21 |
CN1236889A (zh) | 1999-12-01 |
GB9911562D0 (en) | 1999-07-21 |
DE19922397A1 (de) | 1999-12-02 |
KR100329489B1 (ko) | 2002-03-20 |
GB2337812A (en) | 1999-12-01 |
GB2337812B (en) | 2000-07-26 |
JPH11340190A (ja) | 1999-12-10 |
DE19922397B4 (de) | 2010-03-25 |
KR19990088533A (ko) | 1999-12-27 |
US20010052409A1 (en) | 2001-12-20 |
US6347661B2 (en) | 2002-02-19 |
JP3968610B2 (ja) | 2007-08-29 |
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