CN1202255A - 复合电压应用中的自动电压检测 - Google Patents

复合电压应用中的自动电压检测 Download PDF

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Publication number
CN1202255A
CN1202255A CN96198215.2A CN96198215A CN1202255A CN 1202255 A CN1202255 A CN 1202255A CN 96198215 A CN96198215 A CN 96198215A CN 1202255 A CN1202255 A CN 1202255A
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CN
China
Prior art keywords
voltage
power supply
voltage level
supply input
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN96198215.2A
Other languages
English (en)
Chinese (zh)
Inventor
伊斯特克赫里·彼特罗
阿萨尔·马赫姆德
佩特·B·盖里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Lexar Microsystems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21721103&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN1202255(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Lexar Microsystems Inc filed Critical Lexar Microsystems Inc
Publication of CN1202255A publication Critical patent/CN1202255A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0751—Error or fault detection not based on redundancy
    • G06F11/0754—Error or fault detection not based on redundancy by exceeding limits

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Sources (AREA)
  • Read Only Memory (AREA)
CN96198215.2A 1995-11-13 1996-11-13 复合电压应用中的自动电压检测 Pending CN1202255A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US647895P 1995-11-13 1995-11-13
US60/006,478 1995-11-13

Publications (1)

Publication Number Publication Date
CN1202255A true CN1202255A (zh) 1998-12-16

Family

ID=21721103

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96198215.2A Pending CN1202255A (zh) 1995-11-13 1996-11-13 复合电压应用中的自动电压检测

Country Status (6)

Country Link
US (1) US5818781A (enExample)
EP (1) EP0861468B1 (enExample)
JP (2) JP4299883B2 (enExample)
CN (1) CN1202255A (enExample)
DE (1) DE69627176T2 (enExample)
WO (1) WO1997020269A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
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CN100336024C (zh) * 2003-03-26 2007-09-05 三洋电机株式会社 误写入防止电路及包含该误写入防止电路的半导体器件
CN100409369C (zh) * 2001-12-27 2008-08-06 株式会社东芝 电压检测电路控制设备及其存储器控制设备和存储卡
CN100507794C (zh) * 2004-08-26 2009-07-01 瑞昱半导体股份有限公司 适应性功率管理装置及方法
CN101216796B (zh) * 2007-01-05 2011-06-22 鸿富锦精密工业（深圳）有限公司 自动检测软驱装置
CN108806747A (zh) * 2017-04-27 2018-11-13 力旺电子股份有限公司 存储器胞与存储器胞阵列及其相关操作方法
WO2022073177A1 (en) * 2020-10-09 2022-04-14 Micron Technology, Inc. Improved power supply for memory device
CN115497522A (zh) * 2022-11-17 2022-12-20 合肥康芯威存储技术有限公司 一种存储装置及其数据保护方法

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US8171203B2 (en) 1995-07-31 2012-05-01 Micron Technology, Inc. Faster write operations to nonvolatile memory using FSInfo sector manipulation
US6978342B1 (en) 1995-07-31 2005-12-20 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
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US5930170A (en) * 1996-05-22 1999-07-27 National Semiconductor Corporation Voltage selection circuit suitable for use as ESD protection circuit for EEPROM
JP3968392B2 (ja) * 1996-05-30 2007-08-29 カシオ計算機株式会社 データ記憶装置
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US6694402B1 (en) 1998-09-04 2004-02-17 Hyperstone Ag Access control for a memory having a limited erasure frequency
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JP2001211640A (ja) 2000-01-20 2001-08-03 Hitachi Ltd 電子装置と半導体集積回路及び情報処理システム
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JP3546828B2 (ja) * 2000-10-02 2004-07-28 セイコーエプソン株式会社 半導体集積回路、これを備えた時計及び電子機器
US6577535B2 (en) 2001-02-16 2003-06-10 Sandisk Corporation Method and system for distributed power generation in multi-chip memory systems
US6434044B1 (en) 2001-02-16 2002-08-13 Sandisk Corporation Method and system for generation and distribution of supply voltages in memory systems
JP4694040B2 (ja) * 2001-05-29 2011-06-01 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7061049B2 (en) * 2001-06-12 2006-06-13 Kabushiki Kaisha Toshiba Semiconductor device using SOI device and semiconductor integrated circuit using the semiconductor device
JP2003016400A (ja) * 2001-06-28 2003-01-17 Sankyo Seiki Mfg Co Ltd 停電検知装置、及びその停電検知装置を備えたカードリーダ
US20030080772A1 (en) * 2001-08-31 2003-05-01 Davide Giacomini Programmable compact motor drive module
GB0123421D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Power management system
GB0123410D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system for data storage and retrieval
GB0123419D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Data handling system
GB0123415D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Method of writing data to non-volatile memory
GB0123416D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
GB0123417D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Improved data processing
TWI240861B (en) * 2002-01-11 2005-10-01 Integrated Circuit Solution In Data access method and architecture of flash memory
US6957295B1 (en) 2002-01-18 2005-10-18 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US6950918B1 (en) 2002-01-18 2005-09-27 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
WO2003071853A2 (en) * 2002-02-22 2003-09-04 Lexar Media, Inc. Removable memory media with integral indicator light
US7231643B1 (en) 2002-02-22 2007-06-12 Lexar Media, Inc. Image rescue system including direct communication between an application program and a device driver
JP2004164811A (ja) 2002-09-26 2004-06-10 Sharp Corp 半導体記憶装置および携帯電子機器
EP1447809A1 (fr) * 2003-02-14 2004-08-18 SCHLUMBERGER Systèmes Carte à multi-puce
US6973519B1 (en) 2003-06-03 2005-12-06 Lexar Media, Inc. Card identification compatibility
US7212067B2 (en) * 2003-08-01 2007-05-01 Sandisk Corporation Voltage regulator with bypass for multi-voltage storage system
US7219263B1 (en) * 2003-10-29 2007-05-15 Qlogic, Corporation Method and system for minimizing memory corruption
CN1809833B (zh) 2003-12-17 2015-08-05 雷克萨媒体公司 用于减少用于购买的电子设备的盗窃发生率的方法
KR100884235B1 (ko) * 2003-12-31 2009-02-17 삼성전자주식회사 불휘발성 메모리 카드
US7164561B2 (en) * 2004-02-13 2007-01-16 Sandisk Corporation Voltage regulator using protected low voltage devices
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DE102005002752B4 (de) * 2005-01-20 2008-03-27 Siemens Ag Spannungsversorgungsvorrichtung für ein Busgerät sowie Busgerät
US7391193B2 (en) * 2005-01-25 2008-06-24 Sandisk Corporation Voltage regulator with bypass mode
CN101923145B (zh) * 2009-06-15 2013-01-23 凌通科技股份有限公司 电源检测电路、便携式装置以及防止数据遗失的方法
JP5789759B2 (ja) * 2010-03-16 2015-10-07 パナソニックＩｐマネジメント株式会社 情報処理装置、不揮発性記憶装置、情報処理システム及び不揮発性メモリコントローラ
US9710031B2 (en) * 2010-12-30 2017-07-18 Silicon Laboratories Inc. Analog interface for a microprocessor-based device
US8638161B2 (en) * 2011-07-20 2014-01-28 Nxp B.V. Power control device and method therefor
KR101988430B1 (ko) * 2012-11-12 2019-06-13 삼성전자주식회사 메모리 컨트롤러 및 그것을 포함하는 사용자 시스템
CN103869885A (zh) * 2012-12-18 2014-06-18 鸿富锦精密工业（深圳）有限公司 扩展卡及支持所述扩展卡的主板
JP7639385B2 (ja) 2021-02-17 2025-03-05 日本電気株式会社 動作環境設定装置、動作環境設定方法、及び、動作環境設定プログラム

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100409369C (zh) * 2001-12-27 2008-08-06 株式会社东芝 电压检测电路控制设备及其存储器控制设备和存储卡
CN100336024C (zh) * 2003-03-26 2007-09-05 三洋电机株式会社 误写入防止电路及包含该误写入防止电路的半导体器件
CN100507794C (zh) * 2004-08-26 2009-07-01 瑞昱半导体股份有限公司 适应性功率管理装置及方法
CN101216796B (zh) * 2007-01-05 2011-06-22 鸿富锦精密工业（深圳）有限公司 自动检测软驱装置
CN108806747A (zh) * 2017-04-27 2018-11-13 力旺电子股份有限公司 存储器胞与存储器胞阵列及其相关操作方法
CN108806747B (zh) * 2017-04-27 2020-12-08 力旺电子股份有限公司 存储器胞与存储器胞阵列及其相关操作方法
WO2022073177A1 (en) * 2020-10-09 2022-04-14 Micron Technology, Inc. Improved power supply for memory device
US11798636B2 (en) 2020-10-09 2023-10-24 Micron Technology, Inc. Power supply for a memory device
CN115497522A (zh) * 2022-11-17 2022-12-20 合肥康芯威存储技术有限公司 一种存储装置及其数据保护方法
CN115497522B (zh) * 2022-11-17 2023-03-14 合肥康芯威存储技术有限公司 一种存储装置及其数据保护方法

Also Published As

Publication number Publication date
WO1997020269A1 (en) 1997-06-05
JP4115494B2 (ja) 2008-07-09
DE69627176D1 (de) 2003-05-08
JP2000500892A (ja) 2000-01-25
DE69627176T2 (de) 2004-02-05
JP2006252570A (ja) 2006-09-21
EP0861468A4 (enExample) 1998-10-07
EP0861468A1 (en) 1998-09-02
EP0861468B1 (en) 2003-04-02
US5818781A (en) 1998-10-06
JP4299883B2 (ja) 2009-07-22

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