CN120092512A - 太阳能电池 - Google Patents

太阳能电池 Download PDF

Info

Publication number
CN120092512A
CN120092512A CN202380077093.5A CN202380077093A CN120092512A CN 120092512 A CN120092512 A CN 120092512A CN 202380077093 A CN202380077093 A CN 202380077093A CN 120092512 A CN120092512 A CN 120092512A
Authority
CN
China
Prior art keywords
solar cell
electrode
passivation film
crystalline silicon
frit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380077093.5A
Other languages
English (en)
Chinese (zh)
Inventor
今野圣也
田边秀雄
斋藤元希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Namics Corp
Original Assignee
Namics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2023/012085 external-priority patent/WO2023190282A1/ja
Application filed by Namics Corp filed Critical Namics Corp
Publication of CN120092512A publication Critical patent/CN120092512A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
CN202380077093.5A 2022-11-07 2023-08-09 太阳能电池 Pending CN120092512A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2022-178203 2022-11-07
JP2022178203 2022-11-07
PCT/JP2023/012085 WO2023190282A1 (ja) 2022-03-28 2023-03-27 導電性ペースト、太陽電池及び太陽電池の製造方法
JPPCT/JP2023/012085 2023-03-27
JP2023-096794 2023-06-13
JP2023096794 2023-06-13
PCT/JP2023/029078 WO2024100947A1 (ja) 2022-11-07 2023-08-09 太陽電池

Publications (1)

Publication Number Publication Date
CN120092512A true CN120092512A (zh) 2025-06-03

Family

ID=91032119

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380077093.5A Pending CN120092512A (zh) 2022-11-07 2023-08-09 太阳能电池

Country Status (6)

Country Link
EP (1) EP4618162A4 (https=)
JP (1) JPWO2024100947A1 (https=)
KR (1) KR20250108642A (https=)
CN (1) CN120092512A (https=)
TW (1) TW202420608A (https=)
WO (1) WO2024100947A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157220A (zh) * 2011-02-28 2011-08-17 张振中 晶体硅太阳能电池正面栅线电极专用Ag浆
JP2014078594A (ja) * 2012-10-10 2014-05-01 Noritake Co Ltd ペースト組成物と太陽電池
JP2015050277A (ja) * 2013-08-30 2015-03-16 シャープ株式会社 太陽電池およびその製造方法
CN105408267A (zh) * 2013-07-25 2016-03-16 纳美仕有限公司 结晶系硅太阳能电池及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5169905B2 (ja) 2008-02-26 2013-03-27 三菱マテリアル株式会社 導電性組成物及びそれを用いた太陽電池セルの製造方法並びに該太陽電池セルを用いて形成する太陽電池モジュールの製造方法
US20100224243A1 (en) * 2009-03-05 2010-09-09 Applied Materials, Inc. Adhesion between azo and ag for the back contact in tandem junction cell by metal alloy
JP5550881B2 (ja) 2009-10-15 2014-07-16 ナミックス株式会社 太陽電池及びその製造方法
US20110278507A1 (en) * 2010-05-11 2011-11-17 E. I. Du Pont De Nemours And Company Thick film silver pastes containing iodonium and/or sulfonium salts and their use in photovoltaic cells
JP6137852B2 (ja) * 2013-02-04 2017-05-31 ナミックス株式会社 太陽電池の電極形成用導電性ペースト
DE102018001057B4 (de) 2018-02-07 2025-12-04 Ce Cell Engineering Gmbh Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Siliziumsolarzelle
CN114242803B (zh) * 2022-02-25 2022-08-12 浙江晶科能源有限公司 太阳能电池及其制备方法、光伏组件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157220A (zh) * 2011-02-28 2011-08-17 张振中 晶体硅太阳能电池正面栅线电极专用Ag浆
JP2014078594A (ja) * 2012-10-10 2014-05-01 Noritake Co Ltd ペースト組成物と太陽電池
CN105408267A (zh) * 2013-07-25 2016-03-16 纳美仕有限公司 结晶系硅太阳能电池及其制造方法
JP2015050277A (ja) * 2013-08-30 2015-03-16 シャープ株式会社 太陽電池およびその製造方法

Also Published As

Publication number Publication date
KR20250108642A (ko) 2025-07-15
EP4618162A1 (en) 2025-09-17
JPWO2024100947A1 (https=) 2024-05-16
TW202420608A (zh) 2024-05-16
EP4618162A4 (en) 2026-04-15
WO2024100947A1 (ja) 2024-05-16

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