CN119896060A - 存储装置 - Google Patents
存储装置 Download PDFInfo
- Publication number
- CN119896060A CN119896060A CN202380065907.3A CN202380065907A CN119896060A CN 119896060 A CN119896060 A CN 119896060A CN 202380065907 A CN202380065907 A CN 202380065907A CN 119896060 A CN119896060 A CN 119896060A
- Authority
- CN
- China
- Prior art keywords
- insulator
- conductor
- opening
- transistor
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022147877 | 2022-09-16 | ||
| JP2022-147877 | 2022-09-16 | ||
| PCT/IB2023/058969 WO2024057165A1 (ja) | 2022-09-16 | 2023-09-11 | 記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119896060A true CN119896060A (zh) | 2025-04-25 |
Family
ID=90274449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380065907.3A Pending CN119896060A (zh) | 2022-09-16 | 2023-09-11 | 存储装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2024057165A1 (https=) |
| KR (1) | KR20250071945A (https=) |
| CN (1) | CN119896060A (https=) |
| WO (1) | WO2024057165A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101473684B1 (ko) | 2009-12-25 | 2014-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
| US9312257B2 (en) | 2012-02-29 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2016128859A1 (en) * | 2015-02-11 | 2016-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US11289475B2 (en) * | 2019-01-25 | 2022-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| CN114424339A (zh) | 2019-09-20 | 2022-04-29 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
| JP2021114563A (ja) * | 2020-01-20 | 2021-08-05 | キオクシア株式会社 | 半導体記憶装置 |
-
2023
- 2023-09-11 JP JP2024546511A patent/JPWO2024057165A1/ja active Pending
- 2023-09-11 KR KR1020257010630A patent/KR20250071945A/ko active Pending
- 2023-09-11 WO PCT/IB2023/058969 patent/WO2024057165A1/ja not_active Ceased
- 2023-09-11 CN CN202380065907.3A patent/CN119896060A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20250071945A (ko) | 2025-05-22 |
| JPWO2024057165A1 (https=) | 2024-03-21 |
| WO2024057165A1 (ja) | 2024-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |