KR20250071945A - 기억 장치 - Google Patents

기억 장치 Download PDF

Info

Publication number
KR20250071945A
KR20250071945A KR1020257010630A KR20257010630A KR20250071945A KR 20250071945 A KR20250071945 A KR 20250071945A KR 1020257010630 A KR1020257010630 A KR 1020257010630A KR 20257010630 A KR20257010630 A KR 20257010630A KR 20250071945 A KR20250071945 A KR 20250071945A
Authority
KR
South Korea
Prior art keywords
insulator
conductor
opening
addition
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257010630A
Other languages
English (en)
Korean (ko)
Inventor
히데까즈 미야이리
미쯔히로 마쯔끼
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20250071945A publication Critical patent/KR20250071945A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Semiconductor Memories (AREA)
KR1020257010630A 2022-09-16 2023-09-11 기억 장치 Pending KR20250071945A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022147877 2022-09-16
JPJP-P-2022-147877 2022-09-16
PCT/IB2023/058969 WO2024057165A1 (ja) 2022-09-16 2023-09-11 記憶装置

Publications (1)

Publication Number Publication Date
KR20250071945A true KR20250071945A (ko) 2025-05-22

Family

ID=90274449

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257010630A Pending KR20250071945A (ko) 2022-09-16 2023-09-11 기억 장치

Country Status (4)

Country Link
JP (1) JPWO2024057165A1 (https=)
KR (1) KR20250071945A (https=)
CN (1) CN119896060A (https=)
WO (1) WO2024057165A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路
JP2013211537A (ja) 2012-02-29 2013-10-10 Semiconductor Energy Lab Co Ltd 半導体装置
WO2021053473A1 (ja) 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016128859A1 (en) * 2015-02-11 2016-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11289475B2 (en) * 2019-01-25 2022-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
JP2021114563A (ja) * 2020-01-20 2021-08-05 キオクシア株式会社 半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路
JP2013211537A (ja) 2012-02-29 2013-10-10 Semiconductor Energy Lab Co Ltd 半導体装置
WO2021053473A1 (ja) 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
M.Oota et al., "3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72nm", IEDM Tech. Dig., 2019, pp.50-53

Also Published As

Publication number Publication date
CN119896060A (zh) 2025-04-25
JPWO2024057165A1 (https=) 2024-03-21
WO2024057165A1 (ja) 2024-03-21

Similar Documents

Publication Publication Date Title
KR20240046038A (ko) 반도체 장치, 반도체 장치의 제작 방법, 및 전자 기기
WO2024052774A1 (ja) 半導体装置の作製方法
KR20250090301A (ko) 반도체 장치 및 기억 장치
KR20250116072A (ko) 반도체 장치
KR20250093510A (ko) 반도체 장치 및 기억 장치
WO2024057166A1 (ja) 半導体装置
KR20240060442A (ko) 기억 장치
KR20250060217A (ko) 기억 장치
KR20230174174A (ko) 반도체 장치의 제작 방법
KR20250059432A (ko) 기억 장치 및 기억 장치의 제작 방법
KR20250022704A (ko) 반도체 장치, 기억 장치, 및 반도체 장치의 제작 방법
KR20250053085A (ko) 기억 장치
KR20250071945A (ko) 기억 장치
KR20250107184A (ko) 반도체 장치 및 반도체 장치의 제작 방법
KR20260057631A (ko) 반도체 장치 및 반도체 장치의 제작 방법
KR20250109700A (ko) 기억 장치
KR20260020398A (ko) 반도체 장치, 반도체 장치의 제작 방법, 및 전자 기기
KR20250048253A (ko) 반도체 장치 및 기억 장치
KR20250154423A (ko) 반도체 장치 및 반도체 장치의 제작 방법
KR20250107830A (ko) 반도체 장치 및 기억 장치
KR20250059443A (ko) 기억 장치
KR20250078457A (ko) 기억 장치
KR20250109673A (ko) 반도체 장치
KR20250003743A (ko) 반도체 장치 및 기억 장치
KR20250071946A (ko) 기억 장치

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20250401

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application