CN1195098C - Manufacturing method for producing target material with high resistance used in metal film resistor with high stability by using sputtering technique - Google Patents
Manufacturing method for producing target material with high resistance used in metal film resistor with high stability by using sputtering technique Download PDFInfo
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- CN1195098C CN1195098C CNB021466041A CN02146604A CN1195098C CN 1195098 C CN1195098 C CN 1195098C CN B021466041 A CNB021466041 A CN B021466041A CN 02146604 A CN02146604 A CN 02146604A CN 1195098 C CN1195098 C CN 1195098C
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Abstract
The present invention discloses a making method of a high resistive target material for producing high-stability metal film resistor by a sputtering method, which mainly comprises the steps of raw material proportioning, smelting, casting and wire-cutting. The making method is characterized in that the raw materials comprise the components by weight: 45 to 55% of Si, 40 to 50% of Cr, 3 to 6% of Ni and 0.1 to 0.3% of Ti; the smelting step is carried out in an adamant-graphite-magnesia composite type vacuum induction furnace; the smelting temperature is from 1500 DEG C to 1550 DEG C and the smelting time is one hour; a casting pipe of which the pipe mouth extends to the bottom surface of a die casing is arranged in the die casing; the die casing is roasted to enable the temperature to reach 650 DEG C to 700 DEG C, and then, a feed solution is cast via the bottom surface of the casting pipe; after being cast, the die casing is cooled down slowly to 850 DEG C to 800 DEG C and is insulated for one hour, and then, is cooled down to room temperature at the speed of 10 DEG C to 15 DEG C /h. The present invention has the advantages that the surface of the high resistive target material is smooth and flat, the outer part of the high resistive target material has no crack and gas holes do not exist in the high resistive target material. The high-stability metal film resistor has high stability and the resistance reaches 100 omega to 20 komega (a slot is not etched.).
Description
Technical field
The present invention relates to the high resistant target manufacture method that a kind of sputtering method production high stability metalster is used, belong to electronic material and metallurgical technology.
Background technology
Advantage such as metalster has good stability, precision height, noise is low and frequency response characteristic is good, simultaneously, the operating ambient temperature range broad, the power consumption that unit surface is born is higher, helps the miniaturization of electronics.In addition, its temperature factor, voltage coefficient are all smaller, are adapted at using in the accurate electronic machine.Therefore, the range of application of metalster is very extensive, as the space of needs high stability, high reliability, aviation with, national defence with and in robot calculator, communication Instrument, electronic switching system, use.It becomes the general purpose resistor of new generation that substitutes carbon resister gradually.
At present, advanced both at home and abroad filming technology is to adopt magnetron sputtering drum-type deposition resistance alloy, and this method easily obtains the alloy film identical with the target composition, and can improve output significantly, can also accurately control film performance, improve the stability and the precision of resistor.
In the production process of metalster, target is very crucial, and it is restricting the performances such as precision, reliability, temperature coefficient of resistance of metalster.
At present, be used for the high resistant target of production high stability metalster, mainly rely on import, cost an arm and a leg, this has restricted the development of the electronic industry of China to a certain extent.
Summary of the invention
The object of the present invention is to provide the manufacture method of the high resistant target that a kind of sputtering method production high stability metalster uses.This method adopts the intermediate frequency vacuum induction melting, and process is pollution-free, and prepared high resistant target compactness is good, the metalster stable performance of production.
The present invention is realized by following technical proposals.This method mainly comprises proportion of raw materials, melting, casting and line cutting process.It is characterized in that: the component of raw material and weight content thereof are Si:45～55%, Cr:40～50%, Ni:3～6%, Ti:0.1～0.3%.The compound vacuum induction furnace of corundum-graphite-magnesia is adopted in melting, and smelting temperature is 1500 ℃～1550 ℃, and the time is 1h, the cast tubes that the mouth of pipe extends the formwork bottom surface is set in the formwork, the baking formwork, when making its temperature reach 650 ℃～700 ℃, feed liquid is by the casting of cast tubes bottom surface.Casting back formwork slowly cools to 850 ℃～800 ℃, is incubated one hour, and then cools off with the speed of 10 ℃～15 ℃/h, is cooled to room temperature.
The invention has the advantages that smooth, smooth, the outside flawless of the target material surface of preparation, inner pore-free.The metalster of producing has the high stable performance, and resistance reaches 100 Ω～20k Ω (not cutting).
Embodiment
With Si content 51%, Cr is 44.7%, and Ni is 4%, and Ti is that 0.3% material for preparing is put into corundum crucible, 1 * 10
-2Smelt under the vacuum condition of torr.The intermediate frequency vacuum induction furnace, power 10KW～40KW, induction coil voltage 100V～400V, induction coil electric current 200A～380A, the leading Cos of power factor=0.9～1.Material is heated to 1520 ℃ of fusings, the material of fusing is cast in 670 ℃ the formwork, formwork slowly cools to 820 ℃, be incubated 1 hour, and then be cooled to room temperature, target is carried out the line cutting with the speed of 12 ℃/h, reach needed specification, the specification of target is 382 * 128 * 14mm
3, wherein thickness 14 comprises and covers the copper coin that adds, the thickness 2～3mm of copper coin.
Adopt above-mentioned prepared target to produce metalster on magnetron sputtering coater, the various technical indicators of resistor are: Standard resistance range 100 Ω～20k Ω; Temperature factor TCR is less than 30ppm/ ℃; The high-temperature storage test, 155 ℃, 1000h, Δ R≤± 1.0%R; Life experiment, 70 ± 5 ℃, (1.5h switches on, the 0.5h outage) applies dc rated voltage discontinuously, 1000h, Δ R≤± 1.0%R; The moisture-proof experiment adds 100% rated output volts DS, under alternation damp and hot (temperature is from-10 ℃ to 65 ℃, and relative humidity is from 80%～98%) condition, and 10 days, Δ R≤± 1.5%R.
Claims (1)
1. a sputtering method is produced the high resistant target manufacture method that the high stable metalster is used, this method mainly comprises proportion of raw materials, melting, casting and line cutting process, it is characterized in that: the component of raw material and weight content thereof are, Si:45～55%, Cr:40～50%, Ni:3～6%, Ti:0.1～0.3%, the compound vacuum induction furnace of corundum-graphite-magnesia is adopted in melting, smelting temperature is 1500 ℃～1550 ℃, and the time is 1h, and the cast tubes that the mouth of pipe extends the formwork bottom surface is set in the formwork, the baking formwork, when making its temperature reach 650 ℃～700 ℃, feed liquid is by the casting of cast tubes bottom surface, and casting back formwork slowly cools to 850 ℃～800 ℃, be incubated one hour, and then be cooled to room temperature with the speed of 10 ℃～15 ℃/h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021466041A CN1195098C (en) | 2002-10-28 | 2002-10-28 | Manufacturing method for producing target material with high resistance used in metal film resistor with high stability by using sputtering technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021466041A CN1195098C (en) | 2002-10-28 | 2002-10-28 | Manufacturing method for producing target material with high resistance used in metal film resistor with high stability by using sputtering technique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1415779A CN1415779A (en) | 2003-05-07 |
| CN1195098C true CN1195098C (en) | 2005-03-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021466041A Expired - Fee Related CN1195098C (en) | 2002-10-28 | 2002-10-28 | Manufacturing method for producing target material with high resistance used in metal film resistor with high stability by using sputtering technique |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1195098C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101824599B (en) * | 2010-05-24 | 2012-07-04 | 陕西斯瑞工业有限责任公司 | Method for preparing Cr target by adopting vacuum casting method |
| JP5734599B2 (en) * | 2010-08-17 | 2015-06-17 | 山陽特殊製鋼株式会社 | CrTi alloy sputtering target material and method for producing perpendicular magnetic recording medium using them |
| CN102286724B (en) * | 2011-09-01 | 2013-08-28 | 基迈克材料科技（苏州）有限公司 | Copper and gallium alloy rotating target for photovoltaic absorption layer sputtering film coating and preparation method |
| CN102922233B (en) * | 2012-10-31 | 2014-10-15 | 南京达迈科技实业有限公司 | Method for preparing Ni-Cr magnetron sputtering target material |
-
2002
- 2002-10-28 CN CNB021466041A patent/CN1195098C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1415779A (en) | 2003-05-07 |
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