CN101477858B - High stability high precision high resistance metal film resistor and sputtering film coating process - Google Patents
High stability high precision high resistance metal film resistor and sputtering film coating process Download PDFInfo
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- CN101477858B CN101477858B CN2008101545221A CN200810154522A CN101477858B CN 101477858 B CN101477858 B CN 101477858B CN 2008101545221 A CN2008101545221 A CN 2008101545221A CN 200810154522 A CN200810154522 A CN 200810154522A CN 101477858 B CN101477858 B CN 101477858B
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000002184 metal Substances 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 title claims description 18
- 239000007888 film coating Substances 0.000 title 1
- 238000009501 film coating Methods 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 10
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000013077 target material Substances 0.000 claims description 8
- 229910019819 Cr—Si Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000005477 sputtering target Methods 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
Description
技术领域technical field
本发明涉及真空镀膜技术，特别是一种高稳定高精度高阻值金属膜电阻器及其溅射镀膜工艺方法，具体说为采用磁控溅射法生产高稳定高精度高阻值金属膜电阻器的制造方法。The present invention relates to vacuum coating technology, in particular to a metal film resistor with high stability, high precision and high resistance value and its sputtering coating process method, specifically to produce high stability, high precision and high resistance value metal film resistor by magnetron sputtering The method of manufacturing the device.
背景技术Background technique
金属膜电阻器具有高稳定性、低噪音、频率特性好等优点，同时工作环境温度范围宽，单位面积承受的功耗较高，有利于电子设备的小型化，另外，其温度系数、电压系数都比较小，适合在精密的电子仪器中应用。因此，金属膜电阻器的应用范围极为广泛，如需要高稳定性、高可靠性的太空、航空用、国防用以及在电子计算机中应用。它逐渐成为替代碳膜电阻器的新一代通用电阻器。Metal film resistors have the advantages of high stability, low noise, and good frequency characteristics. At the same time, the temperature range of the working environment is wide, and the power consumption per unit area is high, which is conducive to the miniaturization of electronic equipment. In addition, its temperature coefficient and voltage coefficient They are relatively small and suitable for use in precision electronic instruments. Therefore, the application range of metal film resistors is extremely wide, such as space, aviation, national defense and electronic computers that require high stability and high reliability. It has gradually become a new generation of general-purpose resistors replacing carbon film resistors.
目前，国内外先进的制膜工艺是采用磁控溅射滚式沉积电阻合金，这种方法易获得与靶材成分相同的合金膜，并能大幅度地提高产量，还能精确地控制膜层性能，提高电阻器的稳定性和精度。At present, the advanced film-making process at home and abroad is to use magnetron sputtering to deposit resistive alloys. This method can easily obtain alloy films with the same composition as the target material, and can greatly increase production, and can precisely control the film layer. performance, improving resistor stability and accuracy.
生产高阻值的金属膜电阻器，溅射工艺是非常关键的，它制约着金属膜电阻器的稳定性、精度、电阻温度系数等性能。The sputtering process is very critical for the production of high resistance metal film resistors, which restricts the stability, precision, and temperature coefficient of resistance of metal film resistors.
发明内容Contents of the invention
本发明的目的在于提供一种高稳定高精度高阻值金属膜电阻器及其溅射镀膜工艺方法。该工艺生产的高阻值电阻器稳定性好、精度高，电阻温度系数小。The purpose of the present invention is to provide a metal film resistor with high stability and high precision and high resistance value and its sputtering coating process method. The high-resistance resistors produced by this process have good stability, high precision and small temperature coefficient of resistance.
本发明提供的一种高稳定高精度高阻值金属膜电阻器为：该金属膜电阻器的阻值100MΩ，精度0.5％，过载0.5％，电阻温度系数TCR50PPm/℃，它是在高阻溅射靶材上通过磁控溅射方法制备而成，具体操作是由恒流电源供给的小电流进行长时间的慢溅射。A metal film resistor with high stability and high precision and high resistance value provided by the present invention is as follows: the resistance value of the metal film resistor is 100MΩ, the precision is 0.5%, the overload is 0.5%, and the temperature coefficient of resistance TCR50PPm/℃, it is in the high resistance splash resistance The sputtering target is prepared by magnetron sputtering method, and the specific operation is long-term slow sputtering with a small current supplied by a constant current power supply.
本发明提供的一种高稳定高精度高阻值金属膜电阻器的溅射镀膜工艺方法是：靶材在磁控溅射镀膜机上进行溅射的工艺参数：The sputtering coating process method of a high-stable, high-precision, high-resistance metal film resistor provided by the present invention is: the process parameters for sputtering the target on a magnetron sputtering coating machine:
在真空3×10-3Pa下进行，溅射真空为5×10-1Pa，溅射电压为300～400V，溅射电流为0.1～0.2A，氩气输入量30L/min，氧气输入量1.5L/min，溅射时间1～3h。Carried out under a vacuum of 3×10 -3 Pa, the sputtering vacuum is 5×10 -1 Pa, the sputtering voltage is 300-400V, the sputtering current is 0.1-0.2A, the input of argon is 30L/min, and the input of oxygen 1.5L/min, sputtering time 1~3h.
本发明提供一种高稳定高精度高阻值金属膜电阻器及其溅射镀膜工艺方法，获得均匀一致的膜层，高阻值的金属膜电阻器膜层很薄，使每个基体获得均匀的膜层，使阻值和技术性能达到较好的一致性。生产的高阻值电阻器稳定性好、精度高，电阻温度系数小。The invention provides a metal film resistor with high stability, high precision and high resistance value and its sputtering coating process method, which can obtain a uniform film layer, and the film layer of a metal film resistor with high resistance value is very thin, so that each substrate can obtain a uniform film layer. The film layer makes the resistance value and technical performance better consistent. The high-resistance resistors produced have good stability, high precision, and small temperature coefficient of resistance.
具体实施方式Detailed ways
本发明提供一种高稳定高精度高阻值金属膜电阻器及其溅射镀膜工艺方法，是采用通用的磁控溅射镀膜机(型号TRC2020，美国)进行磁控溅射，靶材是采用Cr-Si系(Si45-55％，Cr 40-50％，Ni 3-6％，Ti 0.1-0.3％)高阻靶材。The present invention provides a metal film resistor with high stability, high precision and high resistance value and its sputtering coating process method, which uses a general magnetron sputtering coating machine (model TRC2020, the United States) for magnetron sputtering, and the target material is made of Cr-Si system (Si45-55%, Cr 40-50%, Ni 3-6%, Ti 0.1-0.3%) high resistance target.
实施例1Example 1
靶材是Cr-Si高阻靶材，美国TRC2020磁控溅射镀膜机，抽真空到3×10-3Pa，冲入氩气和氧气，真空度到5×10-1Pa开始溅射。溅射电压为350V，溅射电流为0.2A，氩气输入量为30L/min，氧气输入量为1.5L/min，溅射时间为1h，得到高阻值金属膜电阻器，测定结果(由天津市电子仪表实验所测定，所用仪器设备是数字多用表8508A型，可程控多功能标准源YS87B型，电子秒表JG900型，超低温调温箱PG-2G)为：阻值100MΩ，精度0.5％，过载0.5％，电阻温度系数TCR50PPm/℃。The target material is Cr-Si high-resistance target material, American TRC2020 magnetron sputtering coating machine, vacuumize to 3×10-3Pa, pour in argon and oxygen, vacuum to 5×10-1Pa to start sputtering. The sputtering voltage is 350V, the sputtering current is 0.2A, the input amount of argon is 30L/min, the input amount of oxygen is 1.5L/min, and the sputtering time is 1h to obtain a high-resistance metal film resistor, and the measurement results (by Tested by Tianjin Electronic Instrument Laboratory, the instruments and equipment used are digital multimeter 8508A, programmable multifunctional standard source YS87B, electronic stopwatch JG900, ultra-low temperature thermostat PG-2G) are: resistance 100MΩ, accuracy 0.5%, Overload 0.5%, temperature coefficient of resistance TCR50PPm/℃.
实施例2Example 2
靶材是Cr-Si高阻靶材，美国TRC2020磁控溅射镀膜机，抽真空到3×10-3Pa，冲入氩气和氧气，真空度到5×10-1Pa开始溅射。溅射电压为350V，溅射电流为0.1A，氩气输入量为30L/min，氧气输入量为1.5L/min，溅射时间为3h，得到高阻值金属膜电阻器，测定结果(测定方法同上)为：阻值100MΩ，精度0.5％，过载0.5％，电阻温度系数TCR50PPm/℃。The target material is Cr-Si high-resistance target material, American TRC2020 magnetron sputtering coating machine, vacuumize to 3×10-3Pa, pour in argon and oxygen, vacuum to 5×10-1Pa to start sputtering. The sputtering voltage is 350V, the sputtering current is 0.1A, the argon gas input is 30L/min, the oxygen input is 1.5L/min, and the sputtering time is 3h to obtain a high-resistance metal film resistor, and the measurement results (measurement The method is the same as above) is: resistance value 100MΩ, accuracy 0.5%, overload 0.5%, temperature coefficient of resistance TCR50PPm/°C.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008101545221A CN101477858B (en) | 2008-12-25 | 2008-12-25 | High stability high precision high resistance metal film resistor and sputtering film coating process |
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| CN2008101545221A CN101477858B (en) | 2008-12-25 | 2008-12-25 | High stability high precision high resistance metal film resistor and sputtering film coating process |
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| CN101477858B true CN101477858B (en) | 2010-08-25 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102013294A (en) * | 2010-09-10 | 2011-04-13 | 东莞市福德电子有限公司 | High-resistance value metal oxide film resistor and manufacture method thereof |
| US20130344322A1 (en) * | 2011-03-28 | 2013-12-26 | Jx Nippon Mining & Metals Corporation | Metal Foil Provided with Electrically Resistive Film, and Method for Producing Same |
| CN103590010B (en) * | 2013-10-31 | 2015-09-23 | 天津大学 | Silicon-rich Cr-Si base resistive film with high thermal stability and low TCR and preparation method thereof |
| CN105154844B (en) * | 2015-09-30 | 2017-11-24 | 中国振华集团云科电子有限公司 | A kind of high resistant chip film resistor and preparation method thereof |
| CN105845314B (en) * | 2016-04-27 | 2017-09-05 | 天津大学 | CoFeB/SiO2/n-Si heterostructure with large magnetoresistance effect and preparation method |
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