CN101477858B - High stability high precision high resistance metal film resistor and sputtering film coating process - Google Patents
High stability high precision high resistance metal film resistor and sputtering film coating process Download PDFInfo
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- CN101477858B CN101477858B CN2008101545221A CN200810154522A CN101477858B CN 101477858 B CN101477858 B CN 101477858B CN 2008101545221 A CN2008101545221 A CN 2008101545221A CN 200810154522 A CN200810154522 A CN 200810154522A CN 101477858 B CN101477858 B CN 101477858B
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Abstract
The invention relates to a high-stability high-precision high-resistance metalster and a sputtering coating technological method thereof. The resistance of the metalster is 100megohm, the precision thereof is 0.5%, the overload thereof is 0.5%, and the temperature coefficient of the resistance thereof is TCR50PPm/DEG C; and the metalster is prepared on a high resistance sputtering target through a magnetron sputtering method. Particular parameters are as follows: the method is conducted in a vacuum of 3 multiplying 10<minus 3>Pa; the sputtering vacuum is 5 multiplying 10<minus 1>Pa; the sputtering voltage is 300 to 400 V; the sputtering current is 0.1 to 0.2 A; the argon input is 30 L/min; the oxygen input is 1.5L/min; and the sputtering time is 1 to 3 hours. The method acquires uniform films; the film of the high resistance metalster is very thin, thereby causing each matrix to acquire an even film and causing the resistance and the technicality to reach higher consistency; and the manufactured metalster has the advantages of good stability, high precision, and low temperature coefficient of the resistance.
Description
Technical field
The present invention relates to vacuum coating technology, particularly a kind of high stability high precision high resistance metal film resistor and sputtering film coating process thereof are specifically for adopting magnetron sputtering method to produce the manufacture method of high stability high precision high resistance metal film resistor.
Background technology
Metal film resistor has advantages such as high stability, low noise, frequency characteristic be good, operating ambient temperature range is wide simultaneously, the power consumption that unit are is born is higher, help the miniaturization of electronic equipment, in addition, its temperature coefficient, voltage coefficient are all smaller, are adapted at using in the accurate electronic instrument.Therefore, the range of application of metal film resistor is very extensive, as the space, aviation that need high stability, high reliability with, national defence with and in electronic computer, use.It becomes the general purpose resistor of new generation that substitutes carbon film resistor gradually.
At present, advanced both at home and abroad filming technology is to adopt magnetron sputtering roll-type deposition electric resistance alloy, and this method easily obtains the alloy film identical with the target composition, and can improve output significantly, can also accurately control film performance, improve the stability and the precision of resistor.
The metal film resistor of production high value, sputtering technology are very crucial, and it is restricting the performances such as stability, precision, temperature coefficient of resistance of metal film resistor.
Summary of the invention
The object of the present invention is to provide a kind of high stability high precision high resistance metal film resistor and sputtering film coating process thereof.The high resistance measurement device good stability of this explained hereafter, precision height, temperature coefficient of resistance is little.
A kind of high stability high precision high resistance metal film resistor provided by the invention is: the resistance 100M Ω of this metal film resistor, precision 0.5%, overload 0.5%, temperature coefficient of resistance TCR50PPm/ ℃, it is to be prepared from by magnetically controlled sputter method on high sputtering-resistant target material, and concrete operations are to carry out for a long time slow sputter by the little electric current that constant-current supply is supplied with.
The sputtering film coating process of a kind of high stability high precision high resistance metal film resistor provided by the invention is: target carries out the technological parameter of sputter on magnetron sputtering coater:
In vacuum 3 * 10
-3Carry out under the Pa, the sputter vacuum is 5 * 10
-1Pa, sputtering voltage are 300～400V, and sputtering current is 0.1～0.2A, argon gas input variable 30L/min, oxygen input variable 1.5L/min, sputtering time 1～3h.
The invention provides a kind of high stability high precision high resistance metal film resistor and sputtering film coating process thereof, obtain the rete of uniformity, the metal film resistor rete of high value is very thin, makes each matrix obtain uniform rete, makes resistance and technical performance reach consistency preferably.High resistance measurement device good stability, the precision height produced, temperature coefficient of resistance is little.
Embodiment
The invention provides a kind of high stability high precision high resistance metal film resistor and sputtering film coating process thereof, be to adopt general magnetron sputtering coater (model TRC2020, the U.S.) carry out magnetron sputtering, target is to adopt (the Si45-55% of Cr-Si system, Cr 40-50%, Ni 3-6%, Ti 0.1-0.3%) the high resistant target.
Embodiment 1
Target is a Cr-Si high resistant target, and U.S. TRC2020 magnetron sputtering coater is evacuated down to 3 * 10-3Pa, pours argon gas and oxygen, and vacuum degree to 5 * 10-1Pa begins sputter.Sputtering voltage is 350V, and sputtering current is 0.2A, and the argon gas input variable is 30L/min, the oxygen input variable is 1.5L/min, and sputtering time is 1h, obtains high resistance metal film resistor, measurement result (is measured by the experiment of Tianjin electronic instrument, used instrument and equipment is a digital multimeter 8508A type, program-controlled multi-functional standard source YS87B type, electronic stopclock JG900 type, ultralow temperature controlled temperature cabinet PG-2G) is: resistance 100M Ω, precision 0.5%, overload 0.5%, temperature coefficient of resistance TCR50PPm/ ℃.
Embodiment 2
Target is a Cr-Si high resistant target, and U.S. TRC2020 magnetron sputtering coater is evacuated down to 3 * 10-3Pa, pours argon gas and oxygen, and vacuum degree to 5 * 10-1Pa begins sputter.Sputtering voltage is 350V, sputtering current is 0.1A, the argon gas input variable is 30L/min, the oxygen input variable is 1.5L/min, and sputtering time is 3h, obtains high resistance metal film resistor, measurement result (assay method is the same) is: resistance 100M Ω, precision 0.5%, overload 0.5%, temperature coefficient of resistance TCR50PPm/ ℃.
Claims (1)
1. high stability high precision high resistance metal film resistor is characterized in that the resistance 100M Ω of this metal film resistor, precision 0.5%, overload 0.5%, temperature coefficient of resistance TCR50PPm/ ℃, it is to be prepared from by magnetically controlled sputter method on high sputtering-resistant target material, and concrete operations are to carry out sputter by constant-current supply, described high sputtering-resistant target material is a Cr-Si system, wherein, Si 45-55%, Cr 40-50%, Ni 3-6%, Ti 0.1-0.3%;
Described target carries out the technological parameter of sputter on magnetron sputtering coater:
In vacuum 3 * 10
-3Carry out under the Pa, sputter vacuum degree is 5 * 10
-1Pa, sputtering voltage are 300～400V, and sputtering current is 0.1～0.2A, argon gas input variable 30L/min, oxygen input variable 1.5L/min, sputtering time 1～3h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101545221A CN101477858B (en) | 2008-12-25 | 2008-12-25 | High stability high precision high resistance metal film resistor and sputtering film coating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101545221A CN101477858B (en) | 2008-12-25 | 2008-12-25 | High stability high precision high resistance metal film resistor and sputtering film coating process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101477858A CN101477858A (en) | 2009-07-08 |
| CN101477858B true CN101477858B (en) | 2010-08-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101545221A Expired - Fee Related CN101477858B (en) | 2008-12-25 | 2008-12-25 | High stability high precision high resistance metal film resistor and sputtering film coating process |
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| Country | Link |
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| CN (1) | CN101477858B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013294A (en) * | 2010-09-10 | 2011-04-13 | 东莞市福德电子有限公司 | High-resistance value metal oxide film resistor and manufacture method thereof |
| JP5346408B2 (en) * | 2011-03-28 | 2013-11-20 | Ｊｘ日鉱日石金属株式会社 | Metal foil provided with electric resistance film and method for manufacturing the same |
| CN103590010B (en) * | 2013-10-31 | 2015-09-23 | 天津大学 | Silicon-rich Cr-Si base resistive film with high thermal stability and low TCR and preparation method thereof |
| CN105154844B (en) * | 2015-09-30 | 2017-11-24 | 中国振华集团云科电子有限公司 | A kind of high resistant chip film resistor and preparation method thereof |
| CN105845314B (en) * | 2016-04-27 | 2017-09-05 | 天津大学 | CoFeB/SiO with large magnetic resistance effect2/ n Si heterojunction structures and preparation method |
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2008
- 2008-12-25 CN CN2008101545221A patent/CN101477858B/en not_active Expired - Fee Related
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| CN101477858A (en) | 2009-07-08 |
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