CN101477858A - High stability high precision high resistance metal film resistor and sputtering film coating process - Google Patents
High stability high precision high resistance metal film resistor and sputtering film coating process Download PDFInfo
- Publication number
- CN101477858A CN101477858A CNA2008101545221A CN200810154522A CN101477858A CN 101477858 A CN101477858 A CN 101477858A CN A2008101545221 A CNA2008101545221 A CN A2008101545221A CN 200810154522 A CN200810154522 A CN 200810154522A CN 101477858 A CN101477858 A CN 101477858A
- Authority
- CN
- China
- Prior art keywords
- sputtering
- resistance
- metal film
- precision
- film resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a high-stability high-precision high-resistance metalster and a sputtering coating technological method thereof. The resistance of the metalster is 100megohm, the precision thereof is 0.5%, the overload thereof is 0.5%, and the temperature coefficient of the resistance thereof is TCR50PPm/DEG C; and the metalster is prepared on a high resistance sputtering target through a magnetron sputtering method. Particular parameters are as follows: the method is conducted in a vacuum of 3 multiplying 10<minus 3>Pa; the sputtering vacuum is 5 multiplying 10<minus 1>Pa; the sputtering voltage is 300 to 400 V; the sputtering current is 0.1 to 0.2 A; the argon input is 30 L/min; the oxygen input is 1.5L/min; and the sputtering time is 1 to 3 hours. The method acquires uniform films; the film of the high resistance metalster is very thin, thereby causing each matrix to acquire an even film and causing the resistance and the technicality to reach higher consistency; and the manufactured metalster has the advantages of good stability, high precision, and low temperature coefficient of the resistance.
Description
Technical field
The present invention relates to vacuum coating technology, particularly a kind of high stability high precision high resistance metal film resistor and sputtering film coating process thereof are specifically for adopting magnetron sputtering method to produce the manufacture method of high stability high precision high resistance metal film resistor.
Background technology
Metal film resistor has advantages such as high stability, low noise, frequency characteristic be good, operating ambient temperature range is wide simultaneously, the power consumption that unit are is born is higher, help the miniaturization of electronic equipment, in addition, its temperature coefficient, voltage coefficient are all smaller, are adapted at using in the accurate electronic instrument.Therefore, the range of application of metal film resistor is very extensive, as the space, aviation that need high stability, high reliability with, national defence with and in electronic computer, use.It becomes the general purpose resistor of new generation that substitutes carbon film resistor gradually.
At present, advanced both at home and abroad filming technology is to adopt magnetron sputtering roll-type deposition electric resistance alloy, and this method easily obtains the alloy film identical with the target composition, and can improve output significantly, can also accurately control film performance, improve the stability and the precision of resistor.
The metal film resistor of production high value, sputtering technology are very crucial, and it is restricting the performances such as stability, precision, temperature coefficient of resistance of metal film resistor.
Summary of the invention
The object of the present invention is to provide a kind of high stability high precision high resistance metal film resistor and sputtering film coating process thereof.The high resistance measurement device good stability of this explained hereafter, precision height, temperature coefficient of resistance is little.
A kind of high stability high precision high resistance metal film resistor provided by the invention is: the resistance 100M Ω of this metal film resistor, precision 0.5%, overload 0.5%, temperature coefficient of resistance TCR50PPm/ ℃, it is to be prepared from by magnetically controlled sputter method on high sputtering-resistant target material, and concrete operations are to carry out for a long time slow sputter by the little electric current that constant-current supply is supplied with.
The sputtering film coating process of a kind of high stability high precision high resistance metal film resistor provided by the invention is: target carries out the technological parameter of sputter on magnetron sputtering coater:
In vacuum 3 * 10
-3Carry out under the Pa, the sputter vacuum is 5 * 10
-1Pa, sputtering voltage are 300～400V, and sputtering current is 0.1～0.2A, argon gas input variable 30L/min, oxygen input variable 1.5L/min, sputtering time 1～3h.
The invention provides a kind of high stability high precision high resistance metal film resistor and sputtering film coating process thereof, obtain the rete of uniformity, the metal film resistor rete of high value is very thin, makes each matrix obtain uniform rete, makes resistance and technical performance reach consistency preferably.High resistance measurement device good stability, the precision height produced, temperature coefficient of resistance is little.
Embodiment
The invention provides a kind of high stability high precision high resistance metal film resistor and sputtering film coating process thereof, be to adopt general magnetron sputtering coater (model TRC2020, the U.S.) carry out magnetron sputtering, target is to adopt (the Si45-55% of Cr-Si system, Cr 40-50%, Ni 3-6%, Ti 0.1-0.3%) the high resistant target.
Embodiment 1
Target is a Cr-Si high resistant target, and U.S. TRC2020 magnetron sputtering coater is evacuated down to 3 * 10-3Pa, pours argon gas and oxygen, and vacuum degree to 5 * 10-1Pa begins sputter.Sputtering voltage is 350V, and sputtering current is 0.2A, and the argon gas input variable is 30L/min, the oxygen input variable is 1.5L/min, and sputtering time is 1h, obtains high resistance metal film resistor, measurement result (is measured by the experiment of Tianjin electronic instrument, used instrument and equipment is a digital multimeter 8508A type, program-controlled multi-functional standard source YS87B type, electronic stopclock JG900 type, ultralow temperature controlled temperature cabinet PG-2G) is: resistance 100M Ω, precision 0.5%, overload 0.5%, temperature coefficient of resistance TCR50PPm/ ℃.
Embodiment 2
Target is a Cr-Si high resistant target, and U.S. TRC2020 magnetron sputtering coater is evacuated down to 3 * 10-3Pa, pours argon gas and oxygen, and vacuum degree to 5 * 10-1Pa begins sputter.Sputtering voltage is 350V, sputtering current is 0.1A, the argon gas input variable is 30L/min, the oxygen input variable is 1.5L/min, and sputtering time is 3h, obtains high resistance metal film resistor, measurement result (assay method is the same) is: resistance 100M Ω, precision 0.5%, overload 0.5%, temperature coefficient of resistance TCR50PPm/ ℃.
Claims (2)
1, a kind of high stability high precision high resistance metal film resistor, the resistance 100M Ω that it is characterized in that this metal film resistor, precision 0.5%, overload 0.5%, temperature coefficient of resistance TCR50PPm/ ℃, it is to be prepared from by magnetically controlled sputter method on high sputtering-resistant target material, and concrete operations are to carry out for a long time slow sputter by the little electric current that constant-current supply is supplied with.
2, the sputtering film coating process of the described high stability high precision high resistance metal film resistor of claim 1 is characterized in that: target carries out the technological parameter of sputter on magnetron sputtering coater:
In vacuum 3 * 10
-3Carry out under the Pa, sputter vacuum degree is 5 * 10
-1Pa, sputtering voltage are 300～400V, and sputtering current is 0.1～0.2A, argon gas input variable 30L/min, oxygen input variable 1.5L/min, sputtering time 1～3h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101545221A CN101477858B (en) | 2008-12-25 | 2008-12-25 | High stability high precision high resistance metal film resistor and sputtering film coating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101545221A CN101477858B (en) | 2008-12-25 | 2008-12-25 | High stability high precision high resistance metal film resistor and sputtering film coating process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101477858A true CN101477858A (en) | 2009-07-08 |
| CN101477858B CN101477858B (en) | 2010-08-25 |
Family
ID=40838545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101545221A Expired - Fee Related CN101477858B (en) | 2008-12-25 | 2008-12-25 | High stability high precision high resistance metal film resistor and sputtering film coating process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101477858B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013294A (en) * | 2010-09-10 | 2011-04-13 | 东莞市福德电子有限公司 | High-resistance value metal oxide film resistor and manufacture method thereof |
| CN103429788A (en) * | 2011-03-28 | 2013-12-04 | 吉坤日矿日石金属株式会社 | Metal foil provided with electrically resistive film, and method for producing same |
| CN103590010A (en) * | 2013-10-31 | 2014-02-19 | 天津大学 | Silicon-enriched Cr-Si based resistive film having high thermal stability and low TCR and preparation method thereof |
| CN105154844A (en) * | 2015-09-30 | 2015-12-16 | 中国振华集团云科电子有限公司 | High-resistance chip thin-film resistor and preparation method thereof |
| CN105845314A (en) * | 2016-04-27 | 2016-08-10 | 天津大学 | High-magnetoresistance-effect CoFeB/SiO<2>/n-Si heterojunction structure and preparation method therefor |
-
2008
- 2008-12-25 CN CN2008101545221A patent/CN101477858B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013294A (en) * | 2010-09-10 | 2011-04-13 | 东莞市福德电子有限公司 | High-resistance value metal oxide film resistor and manufacture method thereof |
| CN103429788A (en) * | 2011-03-28 | 2013-12-04 | 吉坤日矿日石金属株式会社 | Metal foil provided with electrically resistive film, and method for producing same |
| CN103590010A (en) * | 2013-10-31 | 2014-02-19 | 天津大学 | Silicon-enriched Cr-Si based resistive film having high thermal stability and low TCR and preparation method thereof |
| CN103590010B (en) * | 2013-10-31 | 2015-09-23 | 天津大学 | Silicon-rich Cr-Si base resistive film with high thermal stability and low TCR and preparation method thereof |
| CN105154844A (en) * | 2015-09-30 | 2015-12-16 | 中国振华集团云科电子有限公司 | High-resistance chip thin-film resistor and preparation method thereof |
| CN105154844B (en) * | 2015-09-30 | 2017-11-24 | 中国振华集团云科电子有限公司 | A kind of high resistant chip film resistor and preparation method thereof |
| CN105845314A (en) * | 2016-04-27 | 2016-08-10 | 天津大学 | High-magnetoresistance-effect CoFeB/SiO<2>/n-Si heterojunction structure and preparation method therefor |
| CN105845314B (en) * | 2016-04-27 | 2017-09-05 | 天津大学 | CoFeB/SiO with large magnetic resistance effect2/ n Si heterojunction structures and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101477858B (en) | 2010-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101477858B (en) | High stability high precision high resistance metal film resistor and sputtering film coating process | |
| Guillen et al. | High conductivity and transparent ZnO: Al films prepared at low temperature by DC and MF magnetron sputtering | |
| Hsu et al. | Effects of oxygen addition on physical properties of ZnO thin film grown by radio frequency reactive magnetron sputtering | |
| CN110195208B (en) | Variable band gap NbMoTaWV high-entropy alloy oxide film and preparation method thereof | |
| CN105241569B (en) | A kind of metal-doped amorphous carbon film temperature-sensing element and preparation method thereof | |
| CN106783173A (en) | A kind of new all-transparent BZT film varactors and preparation method thereof | |
| CN105385999A (en) | Method for prolonging cycle service life of lens die steel | |
| HRP20191703T1 (en) | Method for producing nanostructured layers | |
| Chuang et al. | TCR control of Ni–Cr resistive film deposited by DC magnetron sputtering | |
| CN109825805B (en) | Metal target material for electrochromic glass and preparation method and application method thereof | |
| TWI604066B (en) | A multilayer wiring film for electronic components and a sputtering target for forming a coating layer | |
| Zhang et al. | Structural and corrosion resistance properties of sputtered zirconium nitride thin films as electrode material for supercapacitor | |
| CN101654770B (en) | Production process for preparing indium tin oxide conductive film on flexible base material | |
| CN103436849B (en) | A kind of sputtering method of sull | |
| CN102703873B (en) | Preparation method of vanadium dioxide thin film of extremely narrow hysteretic curve width and high temperature coefficient of resistance | |
| CN101424653A (en) | Zinc oxide doped air-sensitive film preparation method | |
| CN109930124A (en) | One kind being applied to anti-corrosion Ti-Nb-Ta alloy film material of detecting head surface high-temperature electric conduction and preparation method thereof | |
| CN102994964A (en) | Preparation method of metal-sulfide-doped diamond-like carbon composite film | |
| CN101542009B (en) | SnO2 sputtering target and sputtered film | |
| CN108048796A (en) | The preparation method of ito thin film | |
| CN117187757A (en) | Gradient high-entropy alloy coating Cr/Cr-Ti-Si/Fe-Cr-Al-Ti-Si-Y | |
| CN103436847B (en) | The reaction sputtering system controlled based on vibrating type reacting gas | |
| Horwat et al. | Magnetron sputtering of NASICON (Na3Zr2Si2PO12) thin films: Part II: A novel approach | |
| CN105506551B (en) | A kind of preparation method of tungsten nickel target for electrochomeric glass plated film | |
| CN103628023A (en) | Process for depositing CrN film on surface of vernier caliper |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100825 Termination date: 20101225 |