CN108048796A - The preparation method of ito thin film - Google Patents
The preparation method of ito thin film Download PDFInfo
- Publication number
- CN108048796A CN108048796A CN201711341683.7A CN201711341683A CN108048796A CN 108048796 A CN108048796 A CN 108048796A CN 201711341683 A CN201711341683 A CN 201711341683A CN 108048796 A CN108048796 A CN 108048796A
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- Prior art keywords
- thin film
- ito thin
- preparation
- passed
- steam
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of preparation method of ito thin film, including being passed through steam, argon gas and oxygen into processing chamber；Ito thin film is formed by magnetron sputtering technique.The preparation method of ito thin film provided by the invention, by introducing steam in ito thin film preparation process, improve the electric properties such as ito thin film effective transmissivity, mobility and optical property, the short circuit current flow of the heterojunction solar battery using the ito thin film is added simultaneously, improves the electricity conversion of battery.
Description
Technical field
The present invention relates to a kind of technical field of solar batteries more particularly to a kind of preparation methods of ito thin film.
Background technology
Indium tin oxide films (ITO) are wide due to the excellent physical characteristic such as low-resistivity, high visible light transmissivity
The general transparent conductive film layer applied to HJT solar cells.The quality of the optically and electrically performance of ito thin film, direct relation
The short circuit current flow of HJT solar cells, and then affects the transfer efficiency of battery.In the prior art, magnetic control is generally passed through
The mode of sputtering prepares ito thin film, to be usually passed through oxygen and argon gas into processing chamber in preparation process, but by this
The short circuit current flow for the ITO that mode deposits is weaker, and the electricity conversion of battery is relatively low.
The content of the invention
The object of the present invention is to provide a kind of preparation methods of ito thin film, to solve above-mentioned the problems of the prior art, carry
High short circuit current flow promotes the electricity conversion of battery.
The present invention provides a kind of preparation method of ito thin film, wherein, preparation process includes：
Steam, argon gas and oxygen are passed through into processing chamber, and passes through magnetron sputtering technique and forms ito thin film.
The preparation method of ito thin film as described above, these, it is preferred to, during ito thin film is prepared, control
The amount for being passed through steam is kept constant.
The preparation method of ito thin film as described above, these, it is preferred to, during ito thin film is prepared, control
The amount for being passed through steam changes over time.
The preparation method of ito thin film as described above, these, it is preferred to, the growth of the amount of the steam being passed through at any time
And successively decrease.
The preparation method of ito thin film as described above, these, it is preferred to, the amount for the steam being passed through is in default steam
Successively decrease in partial pressure range value.
The preparation method of ito thin film as described above, these, it is preferred to, the default water vapor partial pressure value range is 6
×10-3Pa~2 × 10-3Pa。
The preparation method of ito thin film as described above, these, it is preferred to, be passed through into processing chamber steam, argon gas and
Oxygen specifically includes：
The oxygen and argon gas of constant basis are passed through into processing chamber, and there is setting between the amount of oxygen and the amount of argon gas
Proportionate relationship；
Steam is passed through into processing chamber, be passed through the growth at any time of the amount of steam and is successively decreased.
The preparation method of ito thin film as described above, these, it is preferred to, the ratio between the amount of oxygen and the amount of argon gas
Example is more than 0 and less than or equal to 1/70.
The preparation method of ito thin film as described above, these, it is preferred to, it is used to prepare the process cavity of the ito thin film
The vacuum degree of room is 5 × 10-4Pa, processing procedure power are 2kW~8kW, and sedimentation rate is 2nm/s~5nm/s.
The preparation method of ito thin film provided by the invention by introducing steam in ito thin film preparation process, improves
The electric properties such as ito thin film effective transmissivity, mobility and optical property, while add the hetero-junctions using this ito thin film
The short circuit current flow of solar cell improves the electricity conversion of battery.
Description of the drawings
The specific embodiment of the present invention is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is the flow chart of the preparation method of ito thin film provided in an embodiment of the present invention；
Fig. 2 is the effective transmissivity collection of illustrative plates of ito thin film provided in an embodiment of the present invention；
Fig. 3 is the change curve that water vapor partial pressure changes over time.
Specific embodiment
The embodiment of the present invention is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or has the function of same or like element.Below with reference to attached
The embodiment of figure description is exemplary, and is only used for explaining the present invention, and is not construed as limiting the claims.
Referring to Fig. 1 and Fig. 2, an embodiment of the present invention provides a kind of preparation method of ito thin film, preparation processes
Including：
S100, steam, argon gas and oxygen are passed through into processing chamber, and pass through magnetron sputtering technique and form ito thin film.
Wherein, the whole process that steam can be prepared with ito thin film, due to introducing steam in preparation process,
ITO various aspects of performance can be made to have larger promotion.
Specifically, in one embodiment, during ito thin film is prepared, the amount for being passed through steam can be controlled to keep
It is constant, to ensure sufficient vapor and the stability of ito thin film preparation in preparation process.
And in another embodiment, the amount for being passed through steam can be controlled to change over time in preparation process, so as to
To realize the accurate control to ito thin film preparation process, further to promote the performance of ito thin film.As shown in Fig. 2, show in Fig. 2
Go out conventional ito thin film and use the transmitance of the ito thin film of the preparation method preparation of the ito thin film of the application offer bent
Line, in all entire wave band of 300nm~1200nm, the transmitance for the ito thin film that the application provides is than conventional ito thin film
Transmitance improve 4%, wherein, in the short-wave band section of 300nm~400nm, the application provide ito thin film transmission
The promotion amplitude of rate is particularly evident, and 48% is improved compared with conventional ito thin film.In addition, the ito thin film that the application provides
Mobility provides nearly 50% compared with the mobility of conventional ito thin film, thereby enhances the optics and electrical property of ito thin film
Energy.
In addition, to applying the hetero-junctions of the ito thin film prepared using the preparation method of the ito thin film of the application offer too
It is positive can be after battery carries out IV tests, the hetero-junctions of ito thin film prepared by the preparation method of the ito thin film provided using the application is too
The short circuit current flow of positive energy battery adds 1.46%, while the fill factor, curve factor of battery compared with conventional heterojunction solar battery
Relative increase 2.82%.
Further, the amount for the steam being passed through can be at any time growth and successively decrease so that the steam in processing chamber
It divides growth at any time and successively decreases, as shown in figure 3, in the starting stage for preparing ito thin film, water vapor partial pressure is in maximum,
With the growth of time, water vapor partial pressure tapers off trend, it is possible thereby to as ito thin film prepares the increase of completeness, gradually subtracts
Small water vapor partial pressure is avoided when ito thin film prepares completion, and water vapor partial pressure fall is excessive and influences ito thin film in last rank
The preparation precision of section.
Further, the amount for the steam being passed through can successively decrease in default water vapor partial pressure value range.
Specifically, which is 6 × 10-3Pa~2 × 10-3Pa.As shown in figure 3, it is preparing
The starting stage of ito thin film controls the amount for the steam being passed through, and the water vapor partial pressure in processing chamber is made to reach 6 × 10-3Pa, and
In the preparation process of ito thin film, it is gradually reduced the amount for the steam being passed through, so that the growth of water vapor partial pressure at any time is gradually dropped
Low, after the completion of ito thin film preparation, water vapor partial pressure is preferably minimized value, and in the present embodiment, which is 2 × 10-3Pa.Its
In, which can make ito thin film keep stable completed state after the completion of preparing, it is prevented to be mutated by preparation condition
And qualitative change occurs.
In addition, step S100 can specifically include：
S110, the oxygen and argon gas that constant basis is passed through into processing chamber, and have between the amount of oxygen and the amount of argon gas
The proportionate relationship of setting.
S120, steam is passed through into processing chamber, is passed through the growth at any time of the amount of steam and successively decreased.
Pass through the control matched between the amount of the oxygen to being passed through and the amount of argon gas so that the grain size of ito thin film obtains
To control, the mobility and transmitance of ito thin film, in technical process, the ratio between the amount of oxygen and the amount of argon gas are improved
More than 0 and less than or equal to 1/70.
It should be noted that in order to ensure the preparation quality of ito thin film, be used to prepare ito thin film processing chamber it is true
Reciprocal of duty cycle can be 5 × 10-4Pa, processing procedure power can be 2kW~8kW, and sedimentation rate can be 2nm/s~5nm/s.
The preparation method of ito thin film provided in an embodiment of the present invention, by introducing steam in ito thin film preparation process,
The electric properties such as ito thin film effective transmissivity, mobility and optical property are improved, while is added using the ito thin film
The short circuit current flow of heterojunction solar battery improves the electricity conversion of battery.
The structure, feature and effect of the present invention, more than institute are described in detail based on the embodiments shown in the drawings
Only presently preferred embodiments of the present invention is stated, but the present invention is not to limit practical range shown in drawing, it is every according to structure of the invention
Want made change or be revised as the equivalent embodiment of equivalent variations, when not going beyond the spirit of the description and the drawings,
It should all be within the scope of the present invention.
Claims (9)
1. a kind of preparation method of ito thin film, which is characterized in that preparation process includes：
Steam, argon gas and oxygen are passed through into processing chamber, and passes through magnetron sputtering technique and forms ito thin film.
2. the preparation method of ito thin film according to claim 1, which is characterized in that during ito thin film is prepared,
The amount that control is passed through steam is kept constant.
3. the preparation method of ito thin film according to claim 1, which is characterized in that during ito thin film is prepared,
The amount that control is passed through steam changes over time.
4. the preparation method of ito thin film according to claim 3, which is characterized in that the amount of the steam being passed through is at any time
Increase and successively decrease.
5. the preparation method of ito thin film according to claim 4, which is characterized in that the amount for the steam being passed through is default
Successively decrease in water vapor partial pressure value range.
6. the preparation method of ito thin film according to claim 5, which is characterized in that the default water vapor partial pressure scope
It is worth for 6 × 10-3Pa~2 × 10-3Pa。
7. the preparation method of ito thin film according to claim 1, which is characterized in that steam, argon are passed through into processing chamber
Gas and oxygen specifically include：
The oxygen and argon gas of constant basis are passed through into processing chamber, and there is the ratio of setting between the amount of oxygen and the amount of argon gas
Relation；
Steam is passed through into processing chamber, be passed through the growth at any time of the amount of steam and is successively decreased.
8. the preparation method of ito thin film according to claim 7, which is characterized in that between the amount of oxygen and the amount of argon gas
Ratio be more than 0 and less than or equal to 1/70.
9. the preparation method of ito thin film according to claim 1, which is characterized in that be used to prepare the work of the ito thin film
The vacuum degree of skill chamber is 5 × 10-4Pa, processing procedure power are 2kW~8kW, and sedimentation rate is 2nm/s~5nm/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711341683.7A CN108048796A (en) | 2017-12-14 | 2017-12-14 | The preparation method of ito thin film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711341683.7A CN108048796A (en) | 2017-12-14 | 2017-12-14 | The preparation method of ito thin film |
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| CN108048796A true CN108048796A (en) | 2018-05-18 |
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| CN201711341683.7A Pending CN108048796A (en) | 2017-12-14 | 2017-12-14 | The preparation method of ito thin film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111293192A (en) * | 2020-02-25 | 2020-06-16 | 东方日升（常州）新能源有限公司 | Method for controlling water vapor in vacuum cavity during preparation of TCO film of solar cell |
| CN113035995A (en) * | 2019-12-24 | 2021-06-25 | 国家电投集团科学技术研究院有限公司 | Preparation method of ITO film for silicon heterojunction solar cell |
| CN114318293A (en) * | 2021-12-29 | 2022-04-12 | 苏州迈为科技股份有限公司 | Battery piece film forming atmosphere control method, film forming system and film forming method |
Citations (2)
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| CN104109839A (en) * | 2014-07-04 | 2014-10-22 | 宜昌南玻显示器件有限公司 | ITO film and preparation method thereof |
| CN104313542A (en) * | 2014-10-24 | 2015-01-28 | 京东方科技集团股份有限公司 | Preparation methods of ITO (indium tin oxide) layer and ITO pattern, display base panel and display device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104109839A (en) * | 2014-07-04 | 2014-10-22 | 宜昌南玻显示器件有限公司 | ITO film and preparation method thereof |
| CN104313542A (en) * | 2014-10-24 | 2015-01-28 | 京东方科技集团股份有限公司 | Preparation methods of ITO (indium tin oxide) layer and ITO pattern, display base panel and display device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113035995A (en) * | 2019-12-24 | 2021-06-25 | 国家电投集团科学技术研究院有限公司 | Preparation method of ITO film for silicon heterojunction solar cell |
| CN113035995B (en) * | 2019-12-24 | 2024-01-26 | 国家电投集团新能源科技有限公司 | Preparation method of ITO film for silicon heterojunction solar cell |
| CN111293192A (en) * | 2020-02-25 | 2020-06-16 | 东方日升（常州）新能源有限公司 | Method for controlling water vapor in vacuum cavity during preparation of TCO film of solar cell |
| CN114318293A (en) * | 2021-12-29 | 2022-04-12 | 苏州迈为科技股份有限公司 | Battery piece film forming atmosphere control method, film forming system and film forming method |
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Application publication date: 20180518 |