CN103305792A - Zinc-oxide-doped transparent film and preparation method thereof - Google Patents

Zinc-oxide-doped transparent film and preparation method thereof Download PDF

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CN103305792A
CN103305792A CN2012100673549A CN201210067354A CN103305792A CN 103305792 A CN103305792 A CN 103305792A CN 2012100673549 A CN2012100673549 A CN 2012100673549A CN 201210067354 A CN201210067354 A CN 201210067354A CN 103305792 A CN103305792 A CN 103305792A
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zinc
doped
doping element
ranges
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谈一波
吴雪飞
黄琦凯
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江苏新源动力有限公司
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Abstract

The invention relates to a zinc-oxide-based doping element transparent conductive film which comprises a glass substrate layer and an oxide-zinc-based doping element film layer with a micropore structure. The preparation method comprises the following steps: mixing doping elements with zinc oxide, drying and grinding so as to obtain precursor doping powder, and mixing and sintering so as to obtain an oxide-zinc-based doping element target material; by taking glass as a substrate layer and utilizing a magnetron sputtering method, performing the gas pumping in vacuum to reach 0.6-3.0*10<-4>Pa under the conditions that the sputtering gas is selected from argon, oxygen, hydrogen, an inert gas or a mixed gas thereof, the temperature ranges from a room temperature to 500 DEG C, the working pressure ranges from 0.06 to 3.0Pa, the direct-current sputtering power ranges from 10 to 120W, the deposition time ranges from 3 to 60 minutes. In addition, the base substrate ranges from 5 to 40 nm in distance and the film ranges from 100 to 2000 nm in thickness.

Description

掺杂氧化锌透明薄膜及其制备方法 Zinc oxide doped transparent film and preparation method

技术领域 FIELD

[0001] 本发明涉及ZnO基掺杂元素型透明导电薄膜及其制备方法,属于透明导电材料薄膜技术领域。 [0001] The present invention relates to a transparent conductive film and element type ZnO-based method for preparing doped, belonging to the field of materials technology transparent conductive thin film.

背景技术 Background technique

[0002] 自透明导电材料发现以来,因工业行业的巨大需求,透明导体材料得到广泛的应用,透明导电材料具有高透明度和高电导率。 [0002] Since the transparent conductive material found that due to huge demand for the industrial sector, the transparent conductor material widely used, a transparent conductive material with high transparency and high electrical conductivity. 大规模应用于平板显示和太阳能光伏新能源系统。 Large-scale used in flat panel display and solar photovoltaic new energy systems.

[0003] 掺杂元素的ZnO基TCO材料,在平板显示器和太阳能电池中得到应用。 [0003] ZnO-based TCO doping element material, applied in flat panel displays and solar cells. 对于太阳能电池来说太阳能吸收的越多太阳能光利用越大,为进一步提高太阳能电池的光电转换效率,目前致力于降低电池表面的光反射,增强光的有效吸收。 Absorb more solar energy using solar light is larger for a solar cell, in order to further enhance the photoelectric conversion efficiency of the solar cell, the current effort to reduce the light reflective surface of the cell, enhancing the effective absorption of light. 一种有效的措施是对透明导电电极表面进行改进,使表面形成有规则的结构,在单晶硅太阳能电池的制备中利用碱液进行表面结构,增强对光的吸收,降低表面的反射率,从而提高太阳能的转换效率。 Is an effective measure to improve the surface of the transparent conductive electrode, formed on the surface with a regular structure, the manufacture of silicon solar cells using the alkaline surface structure to enhance light absorption and reduce the reflectivity of the surface, thereby improving the conversion efficiency of solar energy.

[0004] 对ZnO基透明导电极,主要通过稀酸(盐酸、硝酸)对表面进行处理,利用腐蚀原理在膜表面形成绒面结构,提高太阳能电池的转换功率。 [0004] The ZnO-based transparent conductive electrode, mainly through treatment of the surface of the dilute acid (hydrochloric acid, nitric acid), the principle of textured structure is formed by etching the surface of the film, to improve the conversion of solar power. 近几年来逐步发展在等离子气体中对ZnO基透明导电电极表面进行干法刻蚀处理。 In recent years, the progressive development of the dry etching process ZnO-based transparent conductive electrode surface of the plasma gas and the like. 上述的碱液腐蚀,酸液腐蚀及等离子干法刻蚀,处理工艺复杂,均匀性、重复性较差,影响太阳能电池的性能。 The above-described alkali etching, acid etching, and plasma dry etching treatment process complexity, uniformity, poor reproducibility, affect the performance of the solar cell.

[0005] 发展高性能ZnO基透明导电薄膜,开发多元素掺杂ZnO材料技术对其表面进行积构化,在太阳能光电器领域有广阔的应用前景。 [0005] The development of high performance ZnO-based transparent conductive film, the development of multi-element-doped ZnO materials technology integrated textured surface thereof, it has a broad application prospect in the field of solar collector.

发明内容 SUMMARY

[0006] 本发明的目的在于其克服现有技术的不足,提供一种氧化锌掺杂元素的透明导电材料及其制备方法。 [0006] The object of the present invention is that it overcomes the deficiencies of the prior art, there is provided a zinc oxide transparent conductive material and method for doping elements. 具体采用如下技术方案: In particular the following technical solution:

[0007] —种氧化锌基掺杂元素透明导电薄膜,包括玻璃衬底层和表面具有微孔结构的氧化锌基掺杂元素膜层;所述掺杂元素为单质元素,氧化物、氢氧化物等化合物。 [0007] - species doped zinc oxide-based transparent conductive film element comprising a glass substrate having a surface layer and the microporous structure of the zinc oxide-based layer doping element; said doping element is a simple substance of elements, oxides, hydroxides and other compounds.

[0008] 优选的方案中,所述掺杂元素的比例为0.2〜10.0% (mol)。 [0008] In a preferred embodiment, the ratio of the doping element is 0.2~10.0% (mol).

[0009] 上述透明导电薄膜的制备方法,包括如下步骤: Preparation [0009] The method of the transparent conductive film, comprising the steps of:

[0010] (I)将掺杂元素和氧化锌混合、烘干、研磨,得前驱掺杂粉体;前驱掺杂粉体于500-1000°C预烧2-24小时,再将预烧后的掺杂粉体模压成型,在1100_1450°C烧结1_16小时,制得掺杂元素氧化锌基靶材; After doping precursor powders calcined 2-24 hours at 500-1000 ° C, and then calcined; [0010] (I) The doped zinc oxide element and mixing, drying, grinding, to obtain a precursor powder doped doping the powder molding, sintering 1100_1450 ° C 1_16 hours to obtain a zinc oxide-based target doping element;

[0011] 所述掺杂元素的比例为0.20-10% (mol),掺杂元素为单质元素,氧化物,氢氧化物,硫酸盐,硝酸盐,氯化物,醇盐或氟化物; Ratio [0011] of the doping elements is 0.20-10% (mol), the doping element elemental elements, oxides, hydroxides, sulfates, nitrates, chlorides, alkoxides, or fluoride;

[0012] (2)以玻璃为衬底层,采用磁控溅射法,真空抽气至0.6-3.0X 10_4Pa,溅射气体为氩气、氧气、氢气、惰性气体或它们的混合气体;温度为室25°C至500°C,工作压力为0.06-3.0Pa,直流溅射功率为10-120W,沉积时间为3_60min ;基材衬底距离为5_40nm,膜厚为100-2000nm。 [0012] (2) glass as the substrate layer by magnetron sputtering method, a vacuum evacuated to 0.6-3.0X 10_4Pa, the sputtering gas is argon, oxygen, hydrogen, inert gas or a mixed gas thereof; temperature chamber 25 ° C to 500 ° C, a working pressure of 0.06-3.0Pa, DC sputtering power of 10-120W, the deposition time is 3_60min; 5_40nm substrate from substrate to a thickness of 100-2000nm. [0013] 与现有技术相比,本发明提供的掺杂氧化锌基透明导电薄膜表面具有微孔结构,在保证良好的电学性能的同时,可以提高太阳光线透过率,从而提高太阳能电池的光电转换效率,且制备工艺简单,成本低廉,适于工业化生产。 [0013] Compared with the prior art, doped zinc oxide based transparent conductive thin film surface of the present invention provides a microporous structure, to ensure good electrical properties can be improved while the sun light transmittance, thereby improving the solar cell photoelectric conversion efficiency, and the preparation process is simple, low cost and suitable for industrial production.

具体实施方式 Detailed ways

[0014] 下面的实施例可以使本领域的普通技术人员更全面地理解本发明,但不以任何方式限制本发明。 [0014] The following examples can be made of ordinary skill in the art to more fully understand the invention, but not limit the invention in any way.

[0015] 本发明ZnO基(氧化锌基)掺杂技术的步骤:掺杂氧化锌基的透明导电材料由含有掺杂元素的原料和含有锌元素的原料经混合、烧结法制得。 [0015] The present invention is a ZnO-based (ZnO-yl) doping step technique: doped zinc oxide-based transparent conductive material containing a raw material containing the dopant element and zinc by mixing, sintering method, too. 掺杂元素的比例为 The proportion of doping elements is

0.20-10.0mol%。 0.20-10.0mol%. 掺杂元素为元素单质、氧化物、氢氧化物、醇盐、硫酸盐、硝酸盐、氯化物或氟化物。 Doping element is the element, oxides, hydroxides, alkoxides, sulfates, nitrates, chlorides or fluorides.

[0016] 以上述方法获得的ZnO基掺杂元素为靶材,采用磁控溅射法,以玻璃为衬底,本底抽真空气至1.0-3.0X10-4Pa,以高纯度氩气、氧气、氢气、惰性气体或它们的混合气体为工作气体,工作气压为0.6-3.0Pa,衬底温度为室温至500°C之间,直流溅射功率控制在10-160W之间,沉积时间为10-60min,靶材与衬底距离为5-9cm,获得掺杂氧化锌透明薄膜。 [0016] ZnO-based method for obtaining the above-described doping element as a target using a magnetron sputtering to a glass substrate is, the background evacuated air to 1.0-3.0X10-4Pa, high purity argon, oxygen , hydrogen, an inert gas or a mixed gas as a working gas, the working pressure of 0.6-3.0Pa, a substrate temperature between room temperature to 500 ° C, DC sputtering power control between 10-160W, the deposition time is 10 -60min, the target and the substrate a distance of 5-9cm, to obtain a transparent doped zinc oxide film.

[0017] 实施例1 [0017] Example 1

[0018] (I)将纯度为99.99%的ZnO和单质Al,按Al的掺杂比2.0mol %混合、烘干,然后在球磨机内研磨2小时,将得到的前驱粉在800°C预烧6小时。 [0018] (I) with a purity of 99.99% elemental Al and ZnO, in terms of Al doping than 2.0mol% mixed, dried, and then milled in a ball mill for 2 hours to obtain a precursor powder calcined at 800 ° C 6 hours. 将烧后的掺杂粉压制成型,然后再于1250°C烧结4小时,制得ZnO = Al靶材。 After burning the doped powder pressing, and then sintered at 1250 ° C 4 hours to give ZnO = Al target.

[0019] (2)采用普通玻璃作基片,基片用超声波清洗,再用酒精清洗;将步骤⑴的靶材和清洗后的基片送入直流射磁·控溅射仪,溅射仪本底基础真空为3X 10_4Pa。 [0019] (2) ordinary glass as a substrate, the substrate with ultrasonic cleaning, and then cleaned with alcohol; ⑴ after the step of cleaning the substrate and the target current into radio-controlled magnetic sputtering apparatus, sputtering apparatus background vacuum of the base to 3X 10_4Pa. 溅射气体为纯度99.99%的氩气,工作气压为0.5Pa,溅射功率为16w,溅射时间为100分钟得到掺杂氧化锌透明导电薄膜。 The sputtering gas was argon of 99.99% purity, as the working pressure of 0.5 Pa, sputtering power is 16W, the sputtering time of 100 minutes to obtain a doped zinc oxide transparent conductive film.

[0020] 本实施例制备的透明导电薄膜结晶良好,膜厚为300nm,薄膜的电阻率为 Good crystalline transparent conductive thin film prepared in Example [0020] the present embodiment, the thickness of 300 nm, the resistivity of the film

8.2Χ1(Γ4Ω.cm。 8.2Χ1 (Γ4Ω.cm.

[0021] 实施例2 [0021] Example 2

[0022] (I)将纯度为99.99%的ZnO和MoO3粉,按MoO3的掺杂比3% (mol)混合,用球磨机球磨3小时,制得前驱粉在1000°C预烧4小时,烧制后的掺杂粉压制成型,再于1300°C烧结2h制得ZnO: Mo革巴材。 [0022] (I) with a purity of 99.99% of MoO3 powder and ZnO, MoO3 by doping (mol) 3% ratio of mixing, milling with a ball mill for 3 hours to obtain a precursor powder calcined for 4 hours at 1000 ° C, burning doped powder made after press molding, and then sintering at 1300 ° C 2h prepared ZnO: Mo Gerba material.

[0023] (2)用玻璃作衬底,基片用超声波和酒精清洗;将步骤⑴的靶材和清洗后的玻璃衬底送入射频磁控溅射仪,溅射真空为2.0X 10_4Pa,溅射气体为氩气和氧气(O2气占总气体流量的5% );靶材与衬底距离设定为7cm,溅射气压为0.6Pa,溅射功率10W,溅射时间为60分钟。 [0023] (2) glass as the substrate, the substrate using ultrasonic cleaning and alcohol; glass substrate after the cleaning step and the target fed ⑴ RF magnetron sputtering apparatus, sputtering vacuum to 2.0X 10_4Pa, a sputtering gas of argon and oxygen (O2 5% of the total gas flow rate of gas); from the target and the substrate is set to 7cm, sputtering gas pressure of 0.6 Pa, sputtering power of 10W, the sputtering time was 60 minutes.

[0024] 本实施例制备的透明导电薄膜结晶良好,保持良好的电阻能,电阻率达 [0024] In the present embodiment the transparent conductive thin film of good crystal prepared in Example, can maintain a good resistance, resistance rate

1.00Χ1(Γ4Ω.Cm。 1.00Χ1 (Γ4Ω.Cm.

[0025] 实施例3 [0025] Example 3

[0026] (I)以ZnO基掺杂化合物(ZnO: Sc)作靶材,Sc的掺杂比例2.0mol %,按实施例1的方法制备靶材。 [0026] (I) In-doped ZnO-based compound (ZnO: Sc) as a target, Sc doping ratio of 2.0mol%, a target was prepared according to the method of Example 1.

[0027] (2)以普通玻璃为衬底,本底抽真空至2.0 X 10_4Pa,以99.99%氩气为工作气体,工作气压保持在1.0Pa,靶材与衬底距离为5cm,采用直流磁控溅射,溅射功率100w,沉积时间为60min。 [0027] (2) ordinary glass substrate, evacuated to a background 2.0 X 10_4Pa, 99.99% argon as a working gas, the working gas pressure is maintained at 1.0 Pa, with a target substrate distance of 5cm, DC magnetic controlled sputtering, sputtering power 100w, the deposition time was 60min.

[0028] 本实施例制备的透明导电薄膜,膜性能与实施例1相同,电性能优良。 The transparent conductive film [0028] Preparation of the present embodiment are the same as in Example 1 film properties, excellent electrical properties.

[0029] 实施例4 [0029] Example 4

[0030] (I)将氧化锌、氢氧化铝、二氧化钛,按Al和Ti的掺杂比分别为3.0mol %、 [0030] (I) zinc oxide, aluminum hydroxide, titanium dioxide, doped by the ratio of Al and Ti, respectively 3.0mol%,

0.25m0l%混合,用球磨机均匀球磨8小时,得前躯体掺杂粉,然后于800°C烧结10小时后,模压成型,再于1250°C,烧结14小时,制得靶材。 0.25m0l% were mixed uniformly with a ball mill for 8 hours milling, the front body doped to give powder, and then sintered at 800 ° C 10 hours, and molded and then at 1250 ° C, sintering for 14 hours to obtain a target.

[0031] (2)以普通玻璃为衬底,本底抽真空至2.0X 10_4Pa,以99.99%氩气为工作气体,工作气压保持在0.5Pa,靶材与衬底距离为5cm,采用直流磁控溅射,溅射功率80w,沉积时间为60min。 [0031] (2) ordinary glass substrate, the background vacuum to 2.0X 10_4Pa, 99.99% argon as a working gas, maintained at a working pressure of 0.5 Pa, with a target substrate distance of 5cm, DC magnetic controlled sputtering, sputtering power 80w, deposition time was 60min.

[0032] 本实施例制备的透明导电薄膜结晶良好,保持良好的电阻能,电阻率达3.00 X Kr4 Ω.cm,光线透光率保持在95 %以上。 [0032] The transparent conductive thin film of the present Example was prepared good crystallization can maintain a good resistance, the resistance rate of 3.00 X Kr4 Ω.cm, the light transmittance remains over 95%.

Claims (3)

1.一种氧化锌基掺杂兀素透明导电薄膜,其特征在于包括玻璃衬底层和表面具有微孔结构的氧化锌基掺杂元素膜层;所述掺杂元素为单质元素、氧化物、氢氧化物。 A zinc oxide-based transparent conductive film doped Wu element, comprising a glass substrate having a zinc oxide surface layer and the microporous structure of the base layer doping element; said doping element is a single element substance, an oxide, hydroxide.
2.根据权利要求1所述透明导电薄膜,其特征在于所述掺杂元素的比例为0.2〜.10.0mol %。 2. The transparent conductive film according to claim 1, characterized in that the proportion of doping elements is 0.2~.10.0mol%.
3.根据权利要求1所述透明导电薄膜的制备方法,其特征在于包括如下步骤: (1)将掺杂元素和氧化锌混合、烘干、研磨,得前驱掺杂粉体;前驱掺杂粉体于.500-1000°C预烧2-24小时,再将预烧后的掺杂粉体模压成型,在1100_1450°C烧结1_16小时,制得掺杂元素氧化锌基靶材; 所述掺杂元素的比例为0.20-10mol %,掺杂元素为单质元素,氧化物,氢氧化物,硫酸盐,硝酸盐,氯化物,醇盐或氟化物; (2)以玻璃为衬底层,采用磁控溅射法,真空抽气至0.6-3.0X 10_4Pa,溅射气体为氩气、氧气、氢气、惰性气体或它们的混合气体;温度为室2 5 °C至5 O (TC,工作压力为.0.06-3.0Pa,直流溅射功率为10-120W,沉积时间为3_60min ;基材衬底距离为5_40nm,膜厚为100-2000nm。 3. The transparent conductive thin film of the production method according to claim 1, characterized by comprising the steps of: (1) zinc oxide and the doping element mixing, drying, grinding, to obtain a precursor powder doped; precursor powder doped body at .500-1000 ° C calcined 2-24 hours, after the doped powder compression molding and then calcining, sintering 1100_1450 ° C 1_16 hours to obtain a zinc oxide-based target doping element; said doped the proportion of hetero elements is 0.20-10mol%, the doping element elemental elements, oxides, hydroxides, sulfates, nitrates, chlorides, alkoxides, or fluoride; (2) glass as the substrate layer, using magnetic sputter method, a vacuum evacuated to 0.6-3.0X 10_4Pa, the sputtering gas is argon, oxygen, hydrogen, inert gas or a mixed gas thereof; temperature of chamber 2 5 ° C to 5 O (TC, operating pressure .0.06-3.0Pa, DC sputtering power of 10-120W, the deposition time is 3_60min; 5_40nm substrate from substrate to a thickness of 100-2000nm.
CN2012100673549A 2012-03-14 2012-03-14 Zinc-oxide-doped transparent film and preparation method thereof CN103305792A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103956199A (en) * 2014-04-28 2014-07-30 深圳先进技术研究院 Transparent conducting thin film, manufacturing method thereof and magnetron sputtering device
CN104894520A (en) * 2015-05-06 2015-09-09 大连理工大学 Metal Mg-based UVC wave band transparent conducting structure and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1588623A (en) * 2004-09-30 2005-03-02 浙江大学 Method or growing N-Al co-blended p type ZnO transistor film by two step method
CN101567395A (en) * 2009-05-26 2009-10-28 中国科学院上海硅酸盐研究所 Surface-texturing n-type ZnO-based transparent conductive film and preparation method thereof
CN101661808A (en) * 2009-09-15 2010-03-03 中国科学院上海硅酸盐研究所 Multi-doping zinc-oxide-base wide-bandgap conducting material and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1588623A (en) * 2004-09-30 2005-03-02 浙江大学 Method or growing N-Al co-blended p type ZnO transistor film by two step method
CN101567395A (en) * 2009-05-26 2009-10-28 中国科学院上海硅酸盐研究所 Surface-texturing n-type ZnO-based transparent conductive film and preparation method thereof
CN101661808A (en) * 2009-09-15 2010-03-03 中国科学院上海硅酸盐研究所 Multi-doping zinc-oxide-base wide-bandgap conducting material and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103956199A (en) * 2014-04-28 2014-07-30 深圳先进技术研究院 Transparent conducting thin film, manufacturing method thereof and magnetron sputtering device
CN103956199B (en) * 2014-04-28 2016-09-07 深圳先进技术研究院 Transparent conductive film and preparation method thereof, magnetic control sputtering device
CN104894520A (en) * 2015-05-06 2015-09-09 大连理工大学 Metal Mg-based UVC wave band transparent conducting structure and preparation method thereof

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