CN113035995B - Preparation method of ITO film for silicon heterojunction solar cell - Google Patents
Preparation method of ITO film for silicon heterojunction solar cell Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 50
- 239000010703 silicon Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 60
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 claims description 147
- 238000000151 deposition Methods 0.000 claims description 50
- 230000008021 deposition Effects 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 230000003247 decreasing effect Effects 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a preparation method of an ITO film for a silicon heterojunction solar cell. The preparation method of the ITO film for the silicon heterojunction solar cell comprises the following steps: providing a substrate, wherein the substrate comprises a crystalline silicon substrate and amorphous silicon films formed on two opposite surfaces of the crystalline silicon substrate; in a first specific environment, a first ITO film is deposited on the surface of the amorphous silicon film, and the first specific environment comprises water vapor. Therefore, a large number of hydrogen atoms are formed at the interface between the amorphous silicon film and the first ITO film and inside the first ITO film, the reduction capability of the hydrogen atoms can prevent the interface between the amorphous silicon film and the first ITO film from forming silicon oxide, and further the interface quality and interface performance between the amorphous silicon film and the first ITO film are improved, and the transport of carriers between the interfaces is improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of an ITO film for a silicon heterojunction solar cell and the silicon heterojunction solar cell.
Background
In recent years, the development of silicon heterojunction solar cell technology is rapid, and high attention is paid to the industry, and one key technology in the silicon heterojunction solar cell is the material of TCO (transparent conductive oxide) film and the preparation method. The conventional TCO materials mainly comprise SnO 2 System, in 2 O 3 System and ZnO system, wherein T is most commonly used in silicon heterojunction solar cellsThe CO material is In doped with tin metal 2 O 3 The technology of depositing ITO is PVD (physical vapor deposition) method (mainly magnetic control sputtering), the magnetic control sputtering technology is mature, the technology is stable, the equipment is more economical, and the productivity is larger, so that the technology is adopted by most manufacturers at present.
However, when the ITO film is prepared by deposition, the interface quality between the ITO film and amorphous silicon is poor, and the transmission of carriers is affected.
Therefore, intensive research is being conducted on the preparation of an ITO thin film in a silicon heterojunction solar cell.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent. Therefore, an object of the present invention is to provide a method for preparing an ITO thin film for a silicon heterojunction solar cell, which has a better interface quality between the ITO thin film and amorphous silicon.
In one aspect of the invention, the invention provides a method for preparing an ITO film for a silicon heterojunction solar cell. According to an embodiment of the invention, the preparation method of the ITO film for the silicon heterojunction solar cell comprises the following steps: providing a substrate, wherein the substrate comprises a crystalline silicon substrate and amorphous silicon films formed on two opposite surfaces of the crystalline silicon substrate; in a first specific environment, a first ITO film is deposited and formed on the surface of the amorphous silicon film, wherein the first specific environment comprises water vapor. Therefore, in a first specific environment, the surface of the amorphous silicon film quickly absorbs water vapor, so that a large number of hydrogen atoms (namely hydrogen atoms in water molecules) are formed at the interface between the amorphous silicon film and the first ITO film and inside the first ITO film, the reduction capability of the hydrogen atoms can prevent the interface between the amorphous silicon film and the first ITO film from forming silicon oxide, the interface quality and interface performance between the amorphous silicon film and the first ITO film are improved, and the transport of carriers between the interfaces is improved; meanwhile, the hydrogen atoms at the interface can play a role in passivating the interface, so that the interface performance is further improved; in addition, when the first ITO film is formed by deposition, the existence of water vapor can lead the interior of the first ITO film to contain a large amount of hydrogen atoms, and the hydrogen atoms in the first ITO film are also beneficial to supplementing the hydrogen atoms released in the amorphous silicon film and at the interface of the amorphous silicon film and the crystalline silicon substrate in the subsequent annealing treatment, so that the interface quality is effectively improved.
According to an embodiment of the present invention, after forming the first ITO film, further comprising: and depositing a second ITO film on the surface of the first ITO film in a second specific environment, wherein the second specific environment does not contain water vapor.
According to an embodiment of the present invention, when the first ITO film is deposited and formed, the content of moisture in the first specific environment is kept stable or gradually reduced, and optionally, the time for depositing and forming the first ITO film is 30 to 300 seconds.
According to an embodiment of the present invention, the first ITO film and the second ITO film are deposited to form at least one of the following conditions: the power density is 0.7-70W/cm; the deposition rate is 0.2-2.5 nm/s; the deposition air pressure is 0.1-1.2 Pa.
According to the embodiment of the invention, the initial partial pressure of the water vapor is 0.05-1.5%.
According to an embodiment of the present invention, the first specific environment includes argon, oxygen and the water vapor, the second specific environment includes argon and oxygen, and the partial pressure ratio of the oxygen in the first specific environment and in the second specific environment is 0.1% -3%.
According to an embodiment of the present invention, the deposition temperature for depositing the first ITO film is 25 to 95 ℃.
According to an embodiment of the present invention, the deposition temperature for depositing the second ITO film is 25 to 250 ℃.
According to an embodiment of the present invention, after the second ITO film is formed by deposition, the method further includes: and annealing the first ITO film and the second ITO film, wherein the temperature of the annealing treatment is 100-250 ℃ and the time is 10-40 min.
In another aspect of the invention, a silicon heterojunction solar cell is provided. According to an embodiment of the present invention, the ITO thin film in the silicon heterojunction solar cell is prepared by the method described above. The interface performance between the ITO film and the amorphous silicon film in the silicon heterojunction solar cell is better, and further the electrical performance and the stability of the silicon heterojunction solar cell are improved.
Drawings
Fig. 1 is a flowchart of a method for preparing an ITO thin film for a silicon heterojunction solar cell in one embodiment of the invention.
Fig. 2 is a schematic structural diagram of a substrate in a silicon heterojunction solar cell according to another embodiment of the invention.
Fig. 3 is a schematic structural view of a substrate in a silicon heterojunction solar cell according to another embodiment of the invention.
Fig. 4 is a schematic structural diagram of a silicon heterojunction solar cell according to another embodiment of the invention.
Fig. 5 is a flowchart of a method for preparing an ITO thin film for a silicon heterojunction solar cell in accordance with still another embodiment of the present invention.
Fig. 6 is a schematic diagram of a silicon heterojunction solar cell in accordance with another embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a silicon heterojunction solar cell in accordance with yet another embodiment of the present invention.
Detailed Description
Embodiments of the present invention are described in detail below. The following examples are illustrative only and are not to be construed as limiting the invention. The examples are not to be construed as limiting the specific techniques or conditions described in the literature in this field or as per the specifications of the product. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
In one aspect of the invention, the invention provides a method for preparing an ITO film for a silicon heterojunction solar cell. Referring to fig. 1, according to an embodiment of the present invention, a method for preparing an ITO thin film for a silicon heterojunction solar cell includes:
s100: a base is provided, the base including a crystalline silicon substrate 10 and amorphous silicon thin films 20 formed on two opposite surfaces of the crystalline silicon substrate 10, and a schematic structural view is shown in fig. 2.
The conductivity type of the crystalline silicon substrate is not particularly required, and the crystalline silicon substrate can be flexibly selected by a person skilled in the art according to actual requirements, for example, the crystalline silicon substrate is an N-type monocrystalline silicon wafer; further, the crystalline silicon substrate may be an N-type monocrystalline silicon wafer formed with a pyramidal textured structure. Therefore, the service performance of the silicon heterojunction solar cell can be further improved. According to an embodiment of the present invention, referring to fig. 3, in order to achieve good use performance of the silicon heterojunction solar cell, the forming step of the substrate includes:
s110: forming a pyramid suede structure (not shown) on the surface of the crystalline silicon substrate 10;
s120: forming intrinsic crystal silicon thin films 21 on two opposite surfaces of the crystal silicon substrate 10 forming the textured structure, respectively;
s130: a doped amorphous silicon thin film 22 is formed on the surface of the intrinsic amorphous silicon thin film 21 remote from the crystalline silicon substrate 10.
According to the embodiment of the invention, the method and thickness of forming the intrinsic amorphous silicon thin film and the doped amorphous silicon thin film are not particularly limited, and a person skilled in the art can flexibly select conventional technical means, such as Physical Vapor Deposition (PVD), chemical vapor deposition and the like, according to actual requirements. The surface of the intrinsic amorphous silicon film on two sides of the crystalline silicon substrate is provided with a doped amorphous silicon film, wherein one side is an N-type doped amorphous silicon film, and the other side is a P-type doped amorphous silicon film.
S200: in a first specific environment, a first ITO film 31 is deposited on the surface of the amorphous silicon film 20 (or the doped amorphous silicon film 22), and the structure is schematically shown in fig. 4, and the first specific environment includes moisture.
According to the embodiment of the invention, in a first specific environment, the surface of the amorphous silicon film quickly absorbs water vapor, so that a large number of hydrogen atoms (namely, hydrogen atoms in water molecules) are formed at the interface between the amorphous silicon film and the first ITO film and inside the first ITO film, the reduction capability of the hydrogen atoms can prevent the interface between the amorphous silicon film and the first ITO film from forming silicon oxide, the interface quality and the interface performance between the amorphous silicon film and the first ITO film are improved, and the transport of carriers between the interfaces is improved; meanwhile, the hydrogen atoms at the interface can play a role in passivating the interface, so that the interface performance is further improved; in addition, when the first ITO film is formed by deposition, the existence of water vapor can lead the interior of the first ITO film to contain a large amount of hydrogen atoms, and the hydrogen atoms in the first ITO film are also beneficial to supplementing the hydrogen atoms released in the amorphous silicon film and at the interface of the amorphous silicon film and the crystalline silicon substrate in the subsequent annealing treatment, so that the interface quality is effectively improved.
According to an embodiment of the invention, the first ITO film deposited and formed meets at least one of the following conditions: the power density is 0.7-70W/cm (such as 0.7W/cm, 5W/cm, 10W/cm, 15W/cm, 20W/cm, 30W/cm, 40W/cm, 50W/cm, 60W/cm, 70W/cm); deposition rates of 0.2 to 2.5nm/s (e.g., 0.2nm/s, 0.5nm/s, 0.8nm/s, 1.0nm/s, 1.3nm/s, 1.5nm/s, 1.8nm/s, 2.0nm/s, 2.2nm/s, 2.5 nm/s); the deposition pressure is 0.1 to 1.2Pa (e.g., 0.1Pa, 0.4Pa, 0.6Pa, 0.8Pa, 1.0Pa, 1.2 Pa). Therefore, the first ITO film prepared under the conditions has better flatness uniformity, better adhesive force on the amorphous silicon film and excellent conductive performance, and meanwhile, the good interface performance between the amorphous silicon film and the first ITO film is ensured, so that the silicon heterojunction solar cell with excellent performance is obtained.
According to embodiments of the present invention, the initial partial pressure ratio of water vapor (i.e., the initial partial pressure ratio of water vapor based on the deposition pressure) is 0.05% to 1.5%, such as 0.05%, 0.08%, 0.1%, 0.12%, 0.15%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1.0%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%. Therefore, water vapor can be quickly and uniformly adsorbed on the surface of the amorphous silicon film and the interface between the amorphous silicon film and the first ITO film so as to prevent silicon oxide from forming at the interface; if the initial partial pressure is less than 0.05%, and the moisture content is low, the local surface or local interface of the amorphous silicon film may form silicon oxide before moisture is adsorbed, so that the carrier transport of the solar cell is affected; if the initial partial pressure of water vapor is greater than 1.5%, the first ITO film can contain excessive water molecules in the first ITO film during deposition, so that the carrier concentration of the ITO film is relatively low, the resistance is obviously increased, and the usability of the ITO film is further affected.
It should be noted that, the initial partial pressure ratio of the vapor refers to a stable vapor concentration in the first specific environment before the first ITO film is deposited, and the partial pressure ratio of the vapor at this time is the initial partial pressure ratio of the vapor in the deposition pressure, and it can also be ensured that a layer of vapor is uniformly adsorbed on the surface of the amorphous silicon film and the interface between the amorphous silicon film and the first ITO film, so that a large number of hydrogen atoms are formed at the interface between the amorphous silicon film and the first ITO film, so as to avoid the adverse phenomenon of locally forming silicon oxide. Wherein, before depositing the first ITO film, introducing water vapor for a certain time (the introducing time is more than or equal to 5 minutes) so as to achieve a stable partial pressure ratio of the water vapor.
According to an embodiment of the present invention, the first specific environment includes argon, oxygen, and water vapor, and in the first specific environment, the partial pressure ratio of the oxygen (i.e., the partial pressure ratio of the oxygen based on the deposition pressure) is 0.1% to 3%, such as 0.1%, 0.5%, 1.0%, 1.5%, 2.0%, 2.5%, 3.0%. Thus, in the first specific environment, the first ITO film with good performance is favorably deposited and prepared so as to prepare the silicon heterojunction solar cell with good performance later.
According to an embodiment of the present invention, the deposition temperature for depositing and forming the first ITO thin film is 25-95 ℃, such as 25 ℃, 30 ℃, 35 ℃, 40 ℃, 50 ℃, 60 ℃, 70 ℃, 80 ℃, 90 ℃, 95 ℃. Therefore, the adsorption of water vapor on the surface of the amorphous silicon film and at the interface between the amorphous silicon film and the first ITO film is facilitated at the temperature, and meanwhile, the preparation of the ITO film with good performance is ensured.
According to an embodiment of the invention, in the first specific environment, the moisture content remains stable or gradually decreases. Therefore, on the premise of ensuring that a layer of water vapor is uniformly adsorbed on the surface and the interface of the amorphous silicon film, the content of the water vapor in the first specific environment can be flexibly controlled by a person skilled in the art according to actual conditions. Wherein the person skilled in the art can control the content of the water vapor in the first specific environment by controlling the flow of the water vapor into the first specific environment.
According to an embodiment of the present invention, the time for depositing the first ITO film is 30 to 300 seconds, such as 30 seconds, 60 seconds, 100 seconds, 120 seconds, 150 seconds, 180 seconds, 200 seconds, 240 seconds, 280 seconds, 300 seconds. Therefore, the surface of the amorphous silicon film and the interface between the amorphous silicon film and the first ITO film can be effectively ensured to uniformly adsorb a layer of uniform water vapor, so that a large number of hydrogen atoms are formed at the interface; in addition, when the first ITO film is deposited, a certain amount of hydrogen atoms are contained in the first ITO film, so that the hydrogen atoms released in the amorphous silicon film and at the interface of the amorphous silicon film and the crystalline silicon substrate in the subsequent annealing treatment are supplemented, and the interface quality is improved effectively.
Referring to fig. 5 and 6, after forming the first ITO film 31, according to an embodiment of the present invention, S300 is further included: in a second specific environment, the second ITO film 32 is deposited on the surface of the first ITO film 31, and no moisture is included in the second specific environment. Therefore, the second ITO film is formed on the surface of the first ITO film by continuous deposition, and the second ITO film has a drier surface because no water vapor is contained in a second specific environment, so that in the subsequent process of preparing the silicon heterojunction solar cell, the drier surface of the second ITO film is favorable for forming good interface contact with a metal electrode, and the service performance of the solar cell is further improved.
According to an embodiment of the invention, the second ITO film is deposited to at least one of the following conditions: the power density is 0.7-70W/cm (such as 0.7W/cm, 5W/cm, 10W/cm, 15W/cm, 20W/cm, 30W/cm, 40W/cm, 50W/cm, 60W/cm, 70W/cm); deposition rates of 0.2 to 2.5nm/s (e.g., 0.2nm/s, 0.5nm/s, 0.8nm/s, 1.0nm/s, 1.3nm/s, 1.5nm/s, 1.8nm/s, 2.0nm/s, 2.2nm/s, 2.5 nm/s); the deposition pressure is 0.1 to 1.2Pa (e.g., 0.1Pa, 0.4Pa, 0.6Pa, 0.8Pa, 1.0Pa, 1.2 Pa). Therefore, the second TO film prepared under the conditions has better flatness and uniformity, better adhesive force and excellent conductive performance, and meanwhile, the good interface performance between the amorphous silicon film and the second ITO film is ensured, so that the silicon heterojunction solar cell with excellent performance is obtained.
According to an embodiment of the invention, the second specific environment comprises argon and oxygen, the partial pressure ratio of oxygen is 0.1% -3%, such as 0.1%, 0.5%, 1.0%, 1.5%, 2.0%, 2.5%, 3.0%. Thus, in the second specific environment, the second ITO film with good performance is favorably deposited and prepared so as to prepare the silicon heterojunction solar cell with good performance later.
According to an embodiment of the present invention, the deposition temperature at which the second ITO thin film is deposited is 25-250 ℃, such as 25 ℃, 30 ℃, 35 ℃, 40 ℃, 50 ℃, 60 ℃, 70 ℃, 80 ℃, 90 ℃, 95 ℃, 100 ℃, 120 ℃, 140 ℃, 160 ℃, 180 ℃, 200 ℃, 210 ℃, 230 ℃, 250 ℃. Thus, the second ITO thin film having good performance is advantageous at the above temperature.
According to the embodiment of the invention, the first ITO film and the second ITO film can be prepared by deposition in the same chamber, and the following specific steps are that: when the first ITO film is prepared, argon, oxygen and water vapor can be introduced into the chamber, after the ITO film is deposited for a certain time (namely, the first ITO film is formed by deposition), the introduction of the water vapor into the chamber is stopped, but the deposition of the ITO film is not stopped (namely, the deposition of the second ITO film is started, and the temperature in the chamber can be adjusted according to actual requirements by a person skilled in the art) until the deposition of the second ITO film is completed.
According to an embodiment of the present invention, the method of depositing the ITO thin film may be physical vapor deposition (such as magnetron sputtering) or chemical vapor deposition. The process is mature, convenient to implement and beneficial to industrial production.
According to an embodiment of the present invention, after the second ITO film is deposited and formed, further comprising: the first ITO film and the second ITO film are annealed at a temperature of 100 to 250 ℃ (e.g., 100 ℃, 120 ℃, 140 ℃, 160 ℃, 180 ℃, 200 ℃, 210 ℃, 220 ℃, 230 ℃, 240 ℃, 250 ℃) for 10 to 40 minutes (e.g., 10 minutes, 15 minutes, 20 minutes, 25 minutes, 30 minutes, 35 minutes, or 40 minutes). Therefore, the crystallinity and crystal size of the ITO film (comprising the first ITO film and the second ITO film) can be further improved through annealing treatment, the conductivity of the ITO film is further improved, and adverse effects on structures such as a crystalline silicon substrate and an amorphous silicon film are avoided. In some embodiments, the annealing treatment is performed in a vacuum, air, nitrogen, or argon atmosphere.
In another aspect of the invention, a silicon heterojunction solar cell is provided. According to an embodiment of the present invention, the ITO thin film in the silicon heterojunction solar cell is prepared by the method described above. The interface performance between the ITO film and the amorphous silicon film in the silicon heterojunction solar cell is better, and further the electrical performance and the stability of the silicon heterojunction solar cell are improved.
According to an embodiment of the present invention, referring to fig. 7, the silicon heterojunction solar cell includes: the semiconductor device includes a crystalline silicon substrate 10, an intrinsic amorphous silicon thin film 21 disposed on two oppositely disposed surfaces of the crystalline silicon substrate 10, a doped amorphous silicon thin film 22 disposed on a surface of the intrinsic amorphous silicon thin film 21 remote from the crystalline silicon substrate 10, an ITO thin film 30 (including a first ITO thin film 31 and a second ITO thin film 32) disposed on a surface of the doped amorphous silicon thin film 22 remote from the crystalline silicon substrate 10, and a metal electrode (such as a copper gate line electrode) 40 disposed on a surface of the ITO thin film.
Examples
Example 1
The method for preparing the silicon heterojunction solar cell comprises the following steps:
forming intrinsic crystal silicon thin films on two opposite surfaces of a crystal silicon substrate, respectively;
forming a doped amorphous silicon film on a surface of the intrinsic amorphous silicon film away from the crystalline silicon substrate;
and (3) adopting a magnetron sputtering process, taking oxygen, argon and water vapor as process gases (forming a first specific environment), and depositing and forming a first ITO film on the surface of the doped amorphous silicon film, wherein the parameters of the magnetron sputtering are as follows: the power density is 30W/cm, the deposition rate is 0.6nm/s, the deposition pressure is 0.5Pa, the time is 160s, and in the first specific environment, the partial pressure of oxygen is 0.75%, and the initial partial pressure of water vapor is 0.05%;
and (3) adopting a magnetron sputtering process, and depositing and forming a second ITO film on the surface of the first ITO film by taking oxygen and argon as process gases (forming a second specific environment), wherein the parameters of the magnetron sputtering are as follows: the power density was 30W/cm, the deposition rate was 0.6nm/s, the deposition pressure was 0.5Pa, and the partial pressure of oxygen in the second specific environment was 0.75%;
and a copper grid line electrode is arranged on the surface of the second ITO film.
Example 2
The method of preparing a silicon heterojunction solar cell is the same as in example 1, except that: in a first particular environment, the initial partial pressure of water vapor is 0.10%.
Example 3
The method of preparing a silicon heterojunction solar cell is the same as in example 1, except that: in a first particular environment, the initial partial pressure of water vapor is 0.15%.
Example 4
The method of preparing a silicon heterojunction solar cell is the same as in example 1, except that: in a first particular environment, the initial partial pressure of water vapor is 0.25%.
Comparative example 1
The method for producing a silicon heterojunction solar cell differs from example 1 in that: when preparing the ITO film by magnetron sputtering deposition, oxygen and argon are used as process gases (namely, no water vapor is introduced into the deposition chamber), wherein the process parameters and conditions of the magnetron sputtering are the same as those of the second ITO film prepared in the embodiment 1.
The ITO films prepared in examples 1 to 4 and comparative example 1 were tested for carrier mobility and resistivity, and the test results are shown in table 1 below.
TABLE 1
| Carrier mobility/cm 2 /Vs | Resistivity/. Mu.OMEGA cm | |
| Example 1 | 60 | 452 |
| Example 2 | 69 | 405 |
| Example 3 | 74 | 370 |
| Example 4 | 72 | 508 |
| Comparative example 1 | 46 | 595 |
In the description of the present invention, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (8)
1. A method for preparing an ITO thin film for a silicon heterojunction solar cell, comprising:
providing a substrate, wherein the substrate comprises a crystalline silicon substrate and amorphous silicon films formed on two opposite surfaces of the crystalline silicon substrate;
depositing and forming a first ITO film on the surface of the amorphous silicon film in a first specific environment, wherein the first specific environment comprises water vapor; introducing water vapor for a certain time before depositing the first ITO film;
after forming the first ITO film, further comprising:
depositing a second ITO film on the surface of the first ITO film in a second specific environment, wherein the second specific environment does not contain water vapor;
after depositing and forming the second ITO film, the method further comprises:
and annealing the first ITO film and the second ITO film, wherein the temperature of the annealing treatment is 100-250 ℃ and the time is 10-40 min.
2. The method according to claim 1, wherein the moisture content in the first specific environment is maintained constant or gradually decreased while the first ITO thin film is deposited,
optionally, the first ITO film is deposited for 30 to 300 seconds.
3. The method of claim 1, wherein depositing forms the first ITO film and the second ITO film each satisfy at least one of:
the power density is 0.7-70W/cm;
the deposition rate is 0.2-2.5 nm/s;
the deposition air pressure is 0.1-1.2 Pa.
4. A method according to claim 3, wherein the initial partial pressure of water vapour is in the range 0.05% to 1.5%.
5. The method of claim 3 or 4, wherein the first specific environment comprises argon, oxygen and the water vapor, the second specific environment comprises argon and oxygen, and the partial pressure ratio of the oxygen in each of the first specific environment and the second specific environment is 0.1% -3%.
6. The method according to claim 1, wherein a deposition temperature at which the first ITO film is deposited is 25 to 95 ℃.
7. The method according to claim 1, wherein a deposition temperature at which the second ITO film is deposited is 25 to 250 ℃.
8. A silicon heterojunction solar cell characterized in that an ITO thin film in the silicon heterojunction solar cell is prepared by the method of any one of claims 1 to 7.
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