CN103173733B - High-conductivity Ag doped Cu2O based p-type transparent conductive film and its making method - Google Patents
High-conductivity Ag doped Cu2O based p-type transparent conductive film and its making method Download PDFInfo
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- CN103173733B CN103173733B CN201310075306.9A CN201310075306A CN103173733B CN 103173733 B CN103173733 B CN 103173733B CN 201310075306 A CN201310075306 A CN 201310075306A CN 103173733 B CN103173733 B CN 103173733B
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Abstract
The invention discloses a high-conductivity Ag doped Cu2O based p-type transparent conductive film and its making method, and relates to the technical field of semiconductor films. A series of different-Ag-contents doped Cu2O based p-type transparent conductive films are made through adopting a reaction magnetron sputtering process and controlling the reaction sputtering process parameters, the crystal structure of the Ag doped Cu2O based p-type transparent conductive film obtained through the making method is still an anti-fluorite structure, and the atom ratio of Ag/Cu in the Ag doped Cu2O based p-type transparent conductive film is adjustable in a range of 0-1. The resistivity of the doped film is 0.42-36.2omega.cm, the carrier concentration is 1.47*10<19>-1.18*10<21>cm<-3>, and the migration rate mu is 0.013-0.083cm<2>/V.s. Problems comprising bad room temperature conductivity and low hole carrier concentration of present p-type transparent conductive films are solved in the invention.
Description
Technical field
The present invention relates to semiconductor film technique field, relate in particular to a kind of have p-type electric-conducting characteristic, high conductivity, high carrier concentration, transparent oxide film and technology of preparing thereof, specifically refer to a kind of high conduction performance p-type electrically conducting transparent doping cuprous oxide film and preparation method thereof.
Background technology
Transparent conductive oxide (TCO) film is the novel semiconductor material that is widely used in the numerous areas such as flat pannel display, solar cell, transparent devices and gas sensor.In research and application, find that the N-shaped TCO film room temperature conductivity prepare by doping is splendid, as typical N-shaped TCO film: the Sn In that adulterates
2o
3the specific conductivity of base film (ITO) is generally 10
3scm
-1above, and metallic conduction performance approach.Yet research discovery major part has the TCO film of p-type electric-conducting characteristic, and its conductivity at room temperature performance is compared generally 10 with N-shaped TCO film
-1scm
-1below, and dielectric medium conductivity approach.Because the electroconductibility of p-type TCO film is not good, limited greatly research and the application of TCO film at transparent devices such as transparent homogeneity or PN heterojunction, transparent field effect pipe (FET) and transparent flexible demonstrations.
The conductivity at room temperature performance that all the time improves p-type TCO film is focus and the Disciplinary Frontiers of TCO thin film study.Red copper oxide (Cu
2o) there is antifluorite crystalline structure, in its crystalline structure, have the netted chemical bonding structure of height symmetric space of Cu-O-Cu.Unadulterated Red copper oxide at room temperature a certain amount of Cu of stable existence room (Cu vacancies), in its structure, causes showing p-type electric-conducting characteristic.Someone studies at a certain amount of+3 valence metal ions of Red copper oxide structure doping as Al, In, Sc etc., its crystalline structure changes delafossite type crystal structure into by antifluorite structure, still there is highly symmetrical Cu-O-Cu chemical bonding structure in its crystalline structure, its hole carrier mobility is improved, and improves its p-type electric-conducting performance of room temperature; This adulterating method is called as chemically modified valence band method (chemical modulation of the valence band, CMVB).Such adulterating method requires to change the crystalline structure of body material, complex process, and film preparation rate is low.Someone studies and is not changing under the prerequisite of the basic crystalline structure of cuprous oxide film, doping+2 ,+3 and+metal ion of 4 valencys increases Cu room quantity or part and changes Cu-O-Cu chemical bonding state and improve hole carrier number or mobility, improves its room temperature p-type electric-conducting performance.
Summary of the invention
The present invention is poor in order to solve existing p-type transparent conductive film conductivity at room temperature, and the low problem of hole provides a kind of high conduction performance Ag doped with Cu
2o based p type transparent conductive film and preparation method thereof.By the method for reaction magnetocontrol sputtering, control reactive sputtering process parameter, prepare the Cu of a series of different Ag content doping
2o based p type transparent conductive film, concrete preparation method comprises the steps:
Step 1: prepare substrate: more than substrate is first used to acetone ultrasonic cleaning 10min, dry up, then use ethanolic soln (analysis alcohol) more than ultrasonic cleaning 10min, to dry up.Described acetone ultrasonic cleaning and ethanolic soln ultrasonic cleaning are respectively washed more than one time.
Described substrate is 7095 glass substrates, quartz substrate or Si monocrystal chip, and the thickness of substrate is 0.5～2mm.
Step 2: substrate is fixed in the sample table of magnetic control sputtering device, then sample table is put into the vacuum chamber of magnetic control sputtering device.
Step 3: Cu target (purity is more than or equal to 99.99%) is put into vacuum chamber, be fixed on target position, Ag sheet (purity is more than or equal to 99.99%) on surface label; Or Cu-Ag alloys target is put into vacuum chamber, be fixed on target position, the atomic ratio of Ag and Cu is x, 0<x<50:50.
Step 4: the vacuum chamber of magnetic control sputtering device is vacuumized, when the vacuum tightness of vacuum chamber reaches preset value 4.0～5.0 * 10
-4after Pa, in vacuum chamber, be filled with high-purity O
2gas, makes gaseous tension in vacuum chamber be stabilized in 0.1～1.5Pa.
Step 5: continue to be filled with high-purity Ar gas in vacuum chamber, make gaseous tension in vacuum chamber be stabilized in 2.0～5.0Pa; The film of the identical Ag doping content of sputter, no matter alloy target material or Ag paster mode, Ar gas and O
2the air pressure of gas is than constant; As adopt alloy target material sputter, total gas pressure 1.0～2.0Pa in vacuum chamber.As adopting Ag paster to add the sputter of Cu target mode, in vacuum chamber, total gas pressure is not less than 2.0Pa.
Step 6: open bipolar pulse power supply and add positive voltage 100～200V, cathode voltage 200～430V, electric current 0.15～0.7A, starts deposition.Control depositing time and reach after 30～150s, stop deposition, prepare Ag doped with Cu
2o based p type transparent conductive film.
The Ag doped with Cu obtaining by above-mentioned preparation method
2the crystalline structure of O based p type transparent conductive film keeps antifluorite structure, and wherein Ag and Cu atomic ratio are adjustable in 0～50 scope.The resistivity of doping rear film is 0.42～36.2 Ω cm, and carrier concentration is 1.47 * 10
19～1.18 * 10
21cm
-3, mobility [mu] is 0.013～0.083cm
2/ Vs.
Preferably the doping of Ag is in 22%～30% scope, resistivity to 0.42～0.67 Ω cm; Carrier concentration N7.36 * 10
20～1.18 * 10
21cm
-3.Its room temperature p-type electric-conducting performance of the doping film that wherein Ag and Cu atomic ratio are 3:7 is best, and resistivity is 0.42 Ω cm, and hole is 1.18 * 10
21cm
-3, transmittance is 40～60%.
The invention has the advantages that:
(1) Ag doped with Cu of the present invention
2o based p type transparent conductive film has good conductivity at room temperature performance, and resistivity is 0.42 Ω cm only, and hole reaches 1.18 * 10
21cm
-3.
(2) the invention provides Ag doped with Cu
2o based p type method for preparing transparent conductive film, the atomic percentage conc that can realize Ag is 50% with interior adjustable, and the film obtaining still keeps antifluorite crystalline structure.
Accompanying drawing explanation
Fig. 1 is different Ag dopings and room temperature resistivity graph of a relation in the film for preparing of the present invention;
Fig. 2 is different Ag dopings and hole and mobility graph of a relation in the film for preparing of the present invention;
Fig. 3 is different Ag doping Cu in the film for preparing of the present invention
2the x ray diffraction collection of illustrative plates of O based p type transparent conductive film.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
The present invention is poor in order to solve existing p-type transparent conductive film conductivity at room temperature, and the low problem of hole provides a kind of high conduction performance Ag doped with Cu
2o based p type transparent conductive film and preparation method thereof.By the method for reaction magnetocontrol sputtering, control reactive sputtering process parameter, prepare in Ag(atomic percentage conc 50%) doped with Cu
2o based p type transparent conductive film.Described high conductivity Ag doped with Cu
2o based p type transparent conductive film prepares by being prepared as follows method, specifically comprises following step:
Step 1: prepare substrate, more than substrate is first used to acetone ultrasonic cleaning 10min, dry up, then use ethanolic soln (analysis alcohol) more than ultrasonic cleaning 10min, to dry up.Described acetone ultrasonic cleaning and ethanolic soln ultrasonic cleaning are respectively washed more than one time.
Described substrate is 7095 glass substrates, quartz substrate or Si monocrystal chip, and the thickness of substrate is 0.5～2mm.
Step 2: substrate is fixed in the sample table of magnetic control sputtering device, then sample table is put into the vacuum chamber of magnetic control sputtering device.
Step 3: Cu target (purity is more than or equal to 99.99%) is put into vacuum chamber, be fixed on target position, Ag sheet (purity is more than or equal to 99.99%) on surface label.Or Cu-Ag alloys target is put into vacuum chamber, be fixed on target position, the atomic ratio of Ag and Cu is x, 0<x<1.
Step 4: the vacuum chamber of magnetic control sputtering device is vacuumized, when the vacuum tightness of vacuum chamber reaches preset value 4.0～5.0 * 10
-4after Pa, in vacuum chamber, be filled with high-purity O
2gas, treats that in vacuum chamber, gaseous tension is stabilized in 0.1～1.5Pa.
Step 5: continue to be filled with high-purity Ar gas in vacuum chamber, treat that in vacuum chamber, gaseous tension is stabilized in 2.0～5.0Pa.As adopt alloy target material sputter, and total gas pressure 1.0～2.0Pa in vacuum chamber, wherein the ratio of oxygen pressure and argon pressure remains unchanged.As adopting Ag paster to add the sputter of Cu target mode, in vacuum chamber, total gas pressure is not less than 2.0Pa.
Step 6: open bipolar pulse power supply and add positive voltage 100～200V, cathode voltage 200～430V, electric current 0.15～0.7A starts deposition.Control depositing time and reach after 30～150s, stop deposition, prepare Ag doped with Cu
2o based p type transparent conductive film.
The Ag doped with Cu that above-mentioned preparation method prepares
2the crystalline structure of O based p type transparent conductive film keeps antifluorite structure, and wherein Ag and Cu atomic ratio are adjustable in 0～50 scope.The resistivity of doping rear film is 0.42～36.2 Ω cm, and carrier concentration is 1.47 * 10
19～1.18 * 10
21cm
-3, mobility [mu] is 0.013～0.083cm
2/ Vs.
Preferably the doping of Ag is in 22%～30% scope, resistivity to 0.42～0.67 Ω cm; Carrier concentration N7.36 * 10
20～1.18 * 10
21cm
-3.When Ag and Cu atomic ratio are 3:7, its room temperature p-type electric-conducting performance of gained doping film is best, and resistivity is 0.42 Ω cm, and hole is 1.18 * 10
21cm
-3, transmittance is 40～60%.
comparative example 1
Adopt preparation method provided by the invention to prepare unadulterated Cu
2o based p type transparent conductive film, concrete steps are as follows:
Step 1: prepare substrate, more than substrate is first used to acetone ultrasonic cleaning 10min, dry up, then use ethanolic soln (analysis alcohol) more than ultrasonic cleaning 10min, to dry up.
Described substrate is 7095 glass substrates, and the thickness of substrate is 2mm.
Step 2: substrate is fixed in the sample table of magnetic control sputtering device, then sample table is put into the vacuum chamber of magnetic control sputtering device.
Step 3: Cu target (purity is more than or equal to 99.99%) is put into vacuum chamber, be fixed on target position.
Step 4: the vacuum chamber of magnetic control sputtering device is vacuumized, when the vacuum tightness of vacuum chamber reaches preset value 5.0 * 10
-4after Pa, in vacuum chamber, be filled with high-purity O
2gas, treats that in vacuum chamber, gaseous tension is stabilized in 1.5Pa;
Step 5: continue to be filled with high-purity Ar gas in vacuum chamber, treat that in vacuum chamber, gaseous tension is stabilized in 5.0Pa;
Step 6: open bipolar pulse power supply and add positive voltage 100V, cathode voltage 200V, electric current 0.7A starts deposition.Control depositing time and reach after 30s, stop deposition, prepare Cu
2o based p type transparent conductive film.
As shown in Figure 3, its crystalline structure is antifluorite structure to the structure of prepared not doping film; Room temperature p-type electric-conducting the performance test results is as shown in Table 1 below:
Table 1 is doped with Cu not
2the conductivity at room temperature performance of O based p type transparent conductive film
embodiment 2
Employing the invention provides method and prepares Ag doping 14at.%Cu
2o based p type transparent conductive film, concrete technology step is as follows:
Step 1: prepare substrate, more than substrate is first used to acetone ultrasonic cleaning 10min, dry up, then use ethanolic soln (analysis alcohol) more than ultrasonic cleaning 10min, to dry up.Described acetone ultrasonic cleaning and ethanolic soln ultrasonic cleaning are respectively washed more than one time.
Described substrate is 7095 glass substrates, and the thickness of substrate is 2mm.
Step 2: substrate is fixed in the sample table of magnetic control sputtering device, then sample table is put into the vacuum chamber of magnetic control sputtering device.
Step 3: Cu target (purity is more than or equal to 99.99%) is put into vacuum chamber, be fixed on target position upper surface and stick 3 thick Ag sheets of 0.5mm (purity is more than or equal to 99.99%), or just Cu-Ag alloys target is put into vacuum chamber, the atomic ratio of Ag and Cu is 14:76.
Step 4: the vacuum chamber of magnetic control sputtering device is vacuumized, when the vacuum tightness of vacuum chamber reaches preset value 5.0 * 10
-4after Pa, in vacuum chamber, be filled with high-purity O
2gas, treats that in vacuum chamber, gaseous tension is stabilized in 1.5Pa; If alloys target sputter, its air pressure is 0.5Pa
Step 5: continue to be filled with high-purity Ar gas in vacuum chamber, treat that in vacuum chamber, gaseous tension is stabilized in 5.0Pa; If alloys target sputter, the total gas pressure that fills high-purity Ar gas vacuum chamber is 1.9Pa.
Step 6: open bipolar pulse power supply and add positive voltage 130V, cathode voltage 250V, electric current 0.5A starts deposition.Control depositing time and reach after 60s, stop deposition, prepare Ag doped with Cu
2o based p type transparent conductive film.
Prepared Ag doped with Cu
2as shown in Figure 3, its crystalline structure is antifluorite structure to the structure of O based p type transparent conductive film; Its (111) and (200) diffraction peak position are than unadulterated Cu
2the corresponding diffraction peak of O based p type transparent conductive film position moves to left, and diffraction peak intensity dies down relatively, can infer that Ag atom replaces some Cu atom, and then has formed a kind of new subtractional solid solution structure.Because such solid solution structure produces, to a certain degree destroy the Cu-O-Cu chemical bonding of Partial Height symmetry in crystalline structure, form a certain amount of asymmetrical Cu-O-Ag chemical bond.Just because of such chemical bond, change and make Cu room be more prone to form, and then improve hole and improve its room temperature p-type electric-conducting performance.Ag doped with Cu
2o based p type transparent conductive film room temperature p-type electric-conducting the performance test results is as shown in Table 2 below:
Table 2Ag doped with Cu
2the conductivity at room temperature performance of O based p type transparent conductive film
In contrast table 1 and table 2, data are known, Ag doped with Cu provided by the invention
2the resistivity R of O based p type transparent conductive film and Hall coefficient RH significantly reduce before doping, illustrate that its electroconductibility improves.And hole improves two orders of magnitude.
embodiment 3
Employing the invention provides method and prepares Ag doping 30at.%Cu
2o based p type transparent conductive film, concrete technology step is as follows:
Step 1: prepare substrate, more than substrate is first used to acetone ultrasonic cleaning 10min, dry up, then use ethanolic soln (analysis alcohol) more than ultrasonic cleaning 10min, to dry up.Described acetone ultrasonic cleaning and ethanolic soln ultrasonic cleaning are respectively washed more than one time.
Described substrate is quartz substrate, and the thickness of substrate is 0.5mm.
Step 2: substrate is fixed in the sample table of magnetic control sputtering device, then sample table is put into the vacuum chamber of magnetic control sputtering device.Step 3: Cu target (purity is more than or equal to 99.99%) is put into vacuum chamber, be fixed on target position upper surface and stick 6 thick Ag sheets of 0.8mm (purity is more than or equal to 99.99%); Or just Cu-Ag alloys target is put into vacuum chamber, be fixed on target position the atomic ratio 30:70 of Ag and Cu.
Step 4: the vacuum chamber of magnetic control sputtering device is vacuumized, when the vacuum tightness of vacuum chamber reaches preset value 4.0 * 10
-4after Pa, in vacuum chamber, be filled with high-purity O
2gas, treats that in vacuum chamber, gaseous tension is stabilized in 1.0Pa.If alloys target sputter, its air pressure is 0.3Pa
Step 5: continue to be filled with high-purity Ar gas in vacuum chamber, treat that in vacuum chamber, gaseous tension is stabilized in 3.0Pa.If alloys target sputter, the total gas pressure that fills high-purity Ar gas vacuum chamber is 1.2Pa.
Step 6: open bipolar pulse power supply and add positive voltage 160V, cathode voltage 310V, electric current 0.32A starts deposition.Control depositing time and reach after 100s, stop deposition, prepare Ag doped with Cu
2o based p type transparent conductive film.
Prepared Ag doped with Cu
2as shown in Figure 3, its (111) and (200) diffraction peak position are than unadulterated Cu for the structure of O based p type transparent conductive film
2the corresponding diffraction peak of O based p type transparent conductive film position moves to left, and diffraction peak intensity dies down relatively, and its crystalline structure is antifluorite structure; Doping film room temperature p-type electric-conducting the performance test results is as shown in Table 3 below:
Table 3Ag doped with Cu
2the conductivity at room temperature performance of O based p type transparent conductive film
Adopt the preparation technology identical with embodiment 2 or embodiment 3, change test technology parameter, carry out Ag doped with Cu
2the preparation of O based p type transparent conductive film, concrete technology parameter is as follows:
The different embodiment of table 4 prepare the processing parameter of film
| ? | Substrate | Positive voltage V | Cathode voltage V | Electric current A | Depositing time Ag paster |
| Embodiment 4 | 7095 glass | 120 | 200 | 0.6 | 453/0.2mm |
| Embodiment 5 | Quartzy | 150 | 280 | 0.4 | 804/1mm |
| Embodiment 6 | Si monocrystalline | 180 | 350 | 0.15 | 1206/1mm |
| Embodiment 7 | Quartzy | 200 | 430 | 0.18 | 1508/1.2mm |
The conducting performance test result of the film that the different embodiment of table 5 prepare
By to the above-mentioned Ag doped with Cu preparing
2o based p type transparent conductive film carries out performance test, obtain test result as shown in FIG. 1 to 3, film for the Ag that do not adulterate, its (111) and (200) diffraction peak position move to right than the corresponding diffraction peak of other doping films position, diffraction peak intensity is maximum, can infer that its structure is more complete, firm than doping film of the Cu-O-Cu chemical bonding of Partial Height symmetry in crystalline structure, and then hole is lower, room temperature p-type electric-conducting performance is bad, more than resistivity 600 Ω cm.The Ag doped with Cu of preparing for the present invention
2o based p type transparent conductive film, its (111) and (200) diffraction peak position move to left than the corresponding diffraction peak of doping film position not, and move to left gradually along with the increase of Ag content, diffraction peak intensity weakens gradually, and the diffraction peak intensity when Ag atomic percentage conc is 30% is the most weak.Can infer that Ag atom replaces Cu atom in a large number, and then form a kind of subtractional solid solution structure of high solid solution content.Because such solid solution structure produces, destroy the Cu-O-Cu chemical bonding of Partial Height symmetry in crystalline structure, form a large amount of asymmetrical Cu-O-Ag chemical bonds.Just because of such chemical bond, change and make Cu room form energy step-down, and then improve hole, reach 10
21cm
-3, approach with metal carrier concentration, greatly improve its room temperature p-type electric-conducting performance.Because crystallization dies down with Ag are atom doped in a large number, chemical bond weakens, and thinks that the localization effect of O atom pairs hole carrier weakens, and be conducive to the improvement of mobility, but carrier mobility is also subject to the impact of carrier concentration.If carrier concentration is very high, between current carrier, Electron Electron coherent scattering effect strengthens, and can reduce mobility.The mobility of doping film is under this two kinds of otherwise impact mechanism acting in conjunction, and mobility decreases, but does not affect the improvement of its conductivity at room temperature performance.
Test-results shows, carries out Ag doping, significantly reduces Cu
2the resistivity of O based p type transparent conductive film, improves hole, and mobility does not obviously reduce.Apply the Ag doped with Cu that above-mentioned preparation method obtains
2o based p type transparent conductive film, the doping of Ag can reach in 50%.The resistivity of doping rear film is 0.42～36.2 Ω cm, and carrier concentration is 1.47 * 10
19～1.18 * 10
21cm
-3, mobility [mu] 0.013～0.083cm
2/ Vs.
As depicted in figs. 1 and 2, along with the increase of the doping of Ag, resistance takes the lead in reducing rear increase, and when the atomic ratio of Ag and Cu is in 22%～30% scope, it is minimum that resistivity reaches, and reaches 0.42～0.67 Ω cm; It is maximum that carrier concentration N reaches, and reaches 7.36 * 10
20～1.18 * 10
21cm
-3.
Claims (7)
1. a high conduction performance Ag doped with Cu
2the preparation method of O based p type transparent conductive film, is characterized in that:
Step 1: prepare substrate: more than substrate is first used to acetone ultrasonic cleaning 10min, dry up, then more than using ethanolic soln ultrasonic cleaning 10min, dry up; Described acetone ultrasonic cleaning and ethanolic soln ultrasonic cleaning are respectively washed more than one time;
Step 2: substrate is fixed in the sample table of magnetic control sputtering device, then sample table is put into the vacuum chamber of magnetic control sputtering device;
Step 3: Cu target is put into vacuum chamber, be fixed on target position, Ag sheet on surface label; Or adopt Cu-Ag alloys target; The atomic ratio of Ag and Cu is x, 0<x<50:50;
Step 4: the vacuum chamber of magnetic control sputtering device is vacuumized, when the vacuum tightness of vacuum chamber reaches preset value 4.0～5.0 * 10
-4after Pa, in vacuum chamber, be filled with high-purity O
2gas, makes gaseous tension in vacuum chamber be stabilized in 0.1～1.5Pa;
Step 5: continue to be filled with high-purity Ar gas in vacuum chamber, as adopted Ag paster to add the sputter of Cu target mode, make gaseous tension in vacuum chamber be stabilized in 2.0～5.0Pa; If Cu-Ag alloys target, total pressure 1.0～2.0Pa in vacuum chamber; The film of the identical Ag doping content of sputter, Cu-Ag alloys target or Ag paster adds Cu target mode no matter, the pressure ratio of oxygen and argon gas is constant;
Step 6: open bipolar pulse power supply and add positive voltage 100～200V, cathode voltage 200～430V, electric current 0.15～0.7A, starts deposition; Control depositing time and reach after 30～150s, stop deposition, prepare Ag doped with Cu
2o based p type transparent conductive film.
2. a kind of high conduction performance Ag doped with Cu according to claim 1
2the preparation method of O based p type transparent conductive film, is characterized in that: described substrate is 7095 glass substrates, quartz substrate or Si monocrystal chip, and the thickness of substrate is 0.5～2mm.
3. a kind of high conduction performance Ag doped with Cu according to claim 1
2the preparation method of O based p type transparent conductive film, is characterized in that: the atomic ratio of Ag and Cu is x, 22:78≤x≤30:70.
4. a high conduction performance Ag doped with Cu
2o based p type transparent conductive film, is characterized in that: described Ag doped with Cu
2the crystalline structure of O based p type transparent conductive film keeps antifluorite structure, and wherein Ag and Cu atomic ratio x are 0<x<50:50.
5. a kind of high conduction performance Ag doped with Cu according to claim 4
2o based p type transparent conductive film, is characterized in that: described Ag doped with Cu
2the resistivity of O based p type transparent conductive film is 0.42～36.2 Ω cm, and carrier concentration is 1.47 * 10
19～1.18 * 10
21cm
-3, mobility [mu] is 0.013～0.083cm
2/ Vs, transmittance is 40～60%.
6. a kind of high conduction performance Ag doped with Cu according to claim 5
2o based p type transparent conductive film, is characterized in that: described Ag doped with Cu
2in O based p type transparent conductive film, the atomic percentage conc of Ag is in 22%～30% scope, resistivity 0.42～0.67 Ω cm; Carrier concentration N is 7.36 * 10
20～1.18 * 10
21cm
-3.
7. a kind of high conduction performance Ag doped with Cu according to claim 6
2o based p type transparent conductive film, is characterized in that: described Ag doped with Cu
2in O based p type transparent conductive film, its room temperature resistivity of doping film that Ag and Cu atomic ratio are 3:7 is 0.42 Ω cm, and hole is 1.18 * 10
21cm
-3.
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| CN105925947B (en) * | 2016-05-17 | 2018-03-20 | 河北大学 | A kind of nanometer multilayer transparent conductive film |
| CN108385072B (en) * | 2018-01-18 | 2020-04-21 | 中国科学院宁波材料技术与工程研究所 | Transparent conductive film with single-layer structure and preparation method and application thereof |
| CN108468020A (en) * | 2018-04-24 | 2018-08-31 | 内蒙古工业大学 | A kind of high conductivity p-type CuCrO2The preparation method of film |
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| CN103173733A (en) | 2013-06-26 |
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