CN1192392C - 场响应增强的磁元件及其制造方法 - Google Patents
场响应增强的磁元件及其制造方法 Download PDFInfo
- Publication number
- CN1192392C CN1192392C CNB001316257A CN00131625A CN1192392C CN 1192392 C CN1192392 C CN 1192392C CN B001316257 A CNB001316257 A CN B001316257A CN 00131625 A CN00131625 A CN 00131625A CN 1192392 C CN1192392 C CN 1192392C
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- China
- Prior art keywords
- layer
- ferromagnetic
- bottom metal
- metal layers
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 230000004044 response Effects 0.000 title description 15
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 86
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 230000008878 coupling Effects 0.000 claims abstract description 50
- 238000010168 coupling process Methods 0.000 claims abstract description 50
- 238000005859 coupling reaction Methods 0.000 claims abstract description 50
- 239000013078 crystal Substances 0.000 claims description 66
- 238000000926 separation method Methods 0.000 claims description 51
- 229910052715 tantalum Inorganic materials 0.000 claims description 20
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 19
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 16
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 11
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052707 ruthenium Inorganic materials 0.000 claims description 10
- 230000005415 magnetization Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- 229910003321 CoFe Inorganic materials 0.000 claims description 2
- -1 NiFeCo Inorganic materials 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 2
- 125000006850 spacer group Chemical group 0.000 abstract 4
- 230000005290 antiferromagnetic effect Effects 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000007788 roughening Methods 0.000 description 7
- 229910000863 Ferronickel Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- 229910004156 TaNx Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 102100023344 Centromere protein F Human genes 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 101150038846 slc46a1 gene Proteins 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/716—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by two or more magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
- Semiconductor Memories (AREA)
- Measuring Magnetic Variables (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/422,447 US6205052B1 (en) | 1999-10-21 | 1999-10-21 | Magnetic element with improved field response and fabricating method thereof |
US09/422,447 | 1999-10-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1294390A CN1294390A (zh) | 2001-05-09 |
CN1192392C true CN1192392C (zh) | 2005-03-09 |
Family
ID=23674929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001316257A Expired - Lifetime CN1192392C (zh) | 1999-10-21 | 2000-10-20 | 场响应增强的磁元件及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6205052B1 (zh) |
EP (1) | EP1094329A3 (zh) |
JP (1) | JP2001203405A (zh) |
KR (1) | KR100807295B1 (zh) |
CN (1) | CN1192392C (zh) |
SG (1) | SG87185A1 (zh) |
TW (1) | TW498167B (zh) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4309075B2 (ja) * | 2000-07-27 | 2009-08-05 | 株式会社東芝 | 磁気記憶装置 |
US6803615B1 (en) * | 2001-02-23 | 2004-10-12 | Western Digital (Fremont), Inc. | Magnetic tunnel junction MRAM with improved stability |
TW560095B (en) * | 2001-04-02 | 2003-11-01 | Canon Kk | Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element |
DE10128964B4 (de) * | 2001-06-15 | 2012-02-09 | Qimonda Ag | Digitale magnetische Speicherzelleneinrichtung |
US6531723B1 (en) * | 2001-10-16 | 2003-03-11 | Motorola, Inc. | Magnetoresistance random access memory for improved scalability |
US6597597B2 (en) * | 2001-11-13 | 2003-07-22 | Hewlett-Packard Company | Low temperature attaching process for MRAM components |
US6747301B1 (en) | 2002-02-06 | 2004-06-08 | Western Digital (Fremont), Inc. | Spin dependent tunneling barriers formed with a magnetic alloy |
CN100461419C (zh) * | 2002-07-09 | 2009-02-11 | 日本电气株式会社 | 磁随机存取存储器 |
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
US6654278B1 (en) * | 2002-07-31 | 2003-11-25 | Motorola, Inc. | Magnetoresistance random access memory |
US6801415B2 (en) | 2002-08-30 | 2004-10-05 | Freescale Semiconductor, Inc. | Nanocrystalline layers for improved MRAM tunnel junctions |
US6831312B2 (en) * | 2002-08-30 | 2004-12-14 | Freescale Semiconductor, Inc. | Amorphous alloys for magnetic devices |
US6903909B2 (en) * | 2002-11-01 | 2005-06-07 | Hewlett-Packard Development Company, L.P. | Magnetoresistive element including ferromagnetic sublayer having smoothed surface |
US6743642B2 (en) * | 2002-11-06 | 2004-06-01 | International Business Machines Corporation | Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology |
US20040175845A1 (en) * | 2003-03-03 | 2004-09-09 | Molla Jaynal A. | Method of forming a flux concentrating layer of a magnetic device |
KR20040084095A (ko) * | 2003-03-26 | 2004-10-06 | 주식회사 하이닉스반도체 | 마그네틱 램의 형성방법 |
US6956763B2 (en) * | 2003-06-27 | 2005-10-18 | Freescale Semiconductor, Inc. | MRAM element and methods for writing the MRAM element |
US6862211B2 (en) * | 2003-07-07 | 2005-03-01 | Hewlett-Packard Development Company | Magneto-resistive memory device |
US6967366B2 (en) * | 2003-08-25 | 2005-11-22 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory with reduced switching field variation |
KR100552690B1 (ko) * | 2003-09-26 | 2006-02-20 | 삼성전자주식회사 | 균일한 두께의 터널링막을 갖는 mtj층을 포함하는 자기램 및 그 제조방법 |
US20050073878A1 (en) * | 2003-10-03 | 2005-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-sensing level MRAM structure with different magnetoresistance ratios |
KR101001742B1 (ko) * | 2003-10-24 | 2010-12-15 | 삼성전자주식회사 | 자기 램 및 그 제조방법 |
US7072209B2 (en) * | 2003-12-29 | 2006-07-04 | Micron Technology, Inc. | Magnetic memory having synthetic antiferromagnetic pinned layer |
US7105372B2 (en) | 2004-01-20 | 2006-09-12 | Headway Technologies, Inc. | Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy |
US8465853B2 (en) * | 2004-03-24 | 2013-06-18 | Marvell World Trade Ltd. | Glassy metal disk |
US7611912B2 (en) * | 2004-06-30 | 2009-11-03 | Headway Technologies, Inc. | Underlayer for high performance magnetic tunneling junction MRAM |
US7098495B2 (en) * | 2004-07-26 | 2006-08-29 | Freescale Semiconducor, Inc. | Magnetic tunnel junction element structures and methods for fabricating the same |
JP4550552B2 (ja) * | 2004-11-02 | 2010-09-22 | 株式会社東芝 | 磁気抵抗効果素子、磁気ランダムアクセスメモリ、磁気抵抗効果素子の製造方法 |
US7129098B2 (en) * | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
US7777261B2 (en) * | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
US7973349B2 (en) * | 2005-09-20 | 2011-07-05 | Grandis Inc. | Magnetic device having multilayered free ferromagnetic layer |
US7894248B2 (en) * | 2008-09-12 | 2011-02-22 | Grandis Inc. | Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
JP2009055050A (ja) * | 2008-10-06 | 2009-03-12 | Canon Anelva Corp | スピンバルブ型巨大磁気抵抗薄膜またはtmr膜の製造方法 |
KR101178767B1 (ko) * | 2008-10-30 | 2012-09-07 | 한국과학기술연구원 | 이중 자기 이방성 자유층을 갖는 자기 터널 접합 구조 |
US8508221B2 (en) | 2010-08-30 | 2013-08-13 | Everspin Technologies, Inc. | Two-axis magnetic field sensor having reduced compensation angle for zero offset |
KR102017623B1 (ko) * | 2012-08-30 | 2019-09-03 | 삼성전자주식회사 | 자기 메모리 소자 |
US9368136B2 (en) * | 2014-02-27 | 2016-06-14 | Seagate Technology Llc | Magnetoresistive sensor having synthetic antiferromagnetic layer in top and bottom shields |
US20150263267A1 (en) * | 2014-03-13 | 2015-09-17 | Hiroyuki Kanaya | Magnetic memory and method for manufacturing the same |
CN104134748B (zh) * | 2014-07-17 | 2017-01-11 | 北京航空航天大学 | 一种信息传感及存储器件及其制备方法 |
KR102465539B1 (ko) | 2015-09-18 | 2022-11-11 | 삼성전자주식회사 | 자기 터널 접합 구조체를 포함하는 반도체 소자 및 그의 형성 방법 |
US10115892B2 (en) | 2015-11-23 | 2018-10-30 | Headway Technologies, Inc. | Multilayer structure for reducing film roughness in magnetic devices |
US9780299B2 (en) | 2015-11-23 | 2017-10-03 | Headway Technologies, Inc. | Multilayer structure for reducing film roughness in magnetic devices |
US10622047B2 (en) | 2018-03-23 | 2020-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer |
US10522752B1 (en) | 2018-08-22 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement |
US11152024B1 (en) * | 2020-03-30 | 2021-10-19 | Western Digital Technologies, Inc. | Piezoelectric-based microactuator arrangement for mitigating out-of-plane force and phase variation of flexure vibration |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5173873A (en) * | 1990-06-28 | 1992-12-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High speed magneto-resistive random access memory |
US5329486A (en) * | 1992-04-24 | 1994-07-12 | Motorola, Inc. | Ferromagnetic memory device |
US5617071A (en) * | 1992-11-16 | 1997-04-01 | Nonvolatile Electronics, Incorporated | Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses |
US5583725A (en) * | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
US5909345A (en) * | 1996-02-22 | 1999-06-01 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive device and magnetoresistive head |
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5764567A (en) * | 1996-11-27 | 1998-06-09 | International Business Machines Corporation | Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response |
JP3593220B2 (ja) * | 1996-10-11 | 2004-11-24 | アルプス電気株式会社 | 磁気抵抗効果多層膜 |
US5768181A (en) * | 1997-04-07 | 1998-06-16 | Motorola, Inc. | Magnetic device having multi-layer with insulating and conductive layers |
US5940319A (en) * | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
-
1999
- 1999-10-21 US US09/422,447 patent/US6205052B1/en not_active Expired - Lifetime
-
2000
- 2000-10-03 TW TW089120549A patent/TW498167B/zh not_active IP Right Cessation
- 2000-10-06 KR KR1020000058911A patent/KR100807295B1/ko active IP Right Grant
- 2000-10-13 SG SG200005854A patent/SG87185A1/en unknown
- 2000-10-18 JP JP2000317501A patent/JP2001203405A/ja active Pending
- 2000-10-19 EP EP00122809A patent/EP1094329A3/en not_active Withdrawn
- 2000-10-20 CN CNB001316257A patent/CN1192392C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2001203405A (ja) | 2001-07-27 |
EP1094329A2 (en) | 2001-04-25 |
KR100807295B1 (ko) | 2008-02-28 |
KR20010050902A (ko) | 2001-06-25 |
CN1294390A (zh) | 2001-05-09 |
US6205052B1 (en) | 2001-03-20 |
TW498167B (en) | 2002-08-11 |
SG87185A1 (en) | 2002-03-19 |
EP1094329A3 (en) | 2004-09-01 |
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