CN119153304A - 等离子体处理装置及等离子体处理方法 - Google Patents

等离子体处理装置及等离子体处理方法 Download PDF

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Publication number
CN119153304A
CN119153304A CN202411261847.5A CN202411261847A CN119153304A CN 119153304 A CN119153304 A CN 119153304A CN 202411261847 A CN202411261847 A CN 202411261847A CN 119153304 A CN119153304 A CN 119153304A
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CN
China
Prior art keywords
period
frequency power
frequency
plasma processing
lower electrode
Prior art date
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Pending
Application number
CN202411261847.5A
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English (en)
Chinese (zh)
Inventor
舆水地盐
久保田绅治
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN119153304A publication Critical patent/CN119153304A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202411261847.5A 2019-01-09 2019-12-17 等离子体处理装置及等离子体处理方法 Pending CN119153304A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2019-001662 2019-01-09
JP2019001662 2019-01-09
JP2019018833 2019-02-05
JP2019-018833 2019-02-05
CN201980087489.1A CN113228830B (zh) 2019-01-09 2019-12-17 等离子体处理装置及等离子体处理方法
PCT/JP2019/049499 WO2020145051A1 (ja) 2019-01-09 2019-12-17 プラズマ処理装置及びプラズマ処理方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980087489.1A Division CN113228830B (zh) 2019-01-09 2019-12-17 等离子体处理装置及等离子体处理方法

Publications (1)

Publication Number Publication Date
CN119153304A true CN119153304A (zh) 2024-12-17

Family

ID=71521294

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202411261847.5A Pending CN119153304A (zh) 2019-01-09 2019-12-17 等离子体处理装置及等离子体处理方法
CN201980087489.1A Active CN113228830B (zh) 2019-01-09 2019-12-17 等离子体处理装置及等离子体处理方法

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Country Status (7)

Country Link
US (1) US20220084787A1 (https=)
JP (4) JP7297795B2 (https=)
KR (2) KR102927410B1 (https=)
CN (2) CN119153304A (https=)
SG (1) SG11202107162UA (https=)
TW (1) TWI849020B (https=)
WO (1) WO2020145051A1 (https=)

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JP7737401B2 (ja) 2020-12-10 2025-09-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
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Publication number Publication date
TWI849020B (zh) 2024-07-21
CN113228830A (zh) 2021-08-06
JP7519507B2 (ja) 2024-07-19
KR102927410B1 (ko) 2026-02-13
JP2023115076A (ja) 2023-08-18
TW202431904A (zh) 2024-08-01
CN113228830B (zh) 2024-10-01
JP7297795B2 (ja) 2023-06-26
US20220084787A1 (en) 2022-03-17
WO2020145051A1 (ja) 2020-07-16
SG11202107162UA (en) 2021-07-29
KR20260018173A (ko) 2026-02-06
JP2024133658A (ja) 2024-10-02
JPWO2020145051A1 (ja) 2021-11-18
TW202042598A (zh) 2020-11-16
JP2025166257A (ja) 2025-11-05
KR20210111269A (ko) 2021-09-10
JP7734239B2 (ja) 2025-09-04

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