TWI849020B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法 Download PDF

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Publication number
TWI849020B
TWI849020B TW108146683A TW108146683A TWI849020B TW I849020 B TWI849020 B TW I849020B TW 108146683 A TW108146683 A TW 108146683A TW 108146683 A TW108146683 A TW 108146683A TW I849020 B TWI849020 B TW I849020B
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TW
Taiwan
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period
frequency power
frequency
during
lower electrode
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TW108146683A
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English (en)
Chinese (zh)
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TW202042598A (zh
Inventor
輿水地塩
久保田紳治
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日商東京威力科創股份有限公司
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Publication of TW202042598A publication Critical patent/TW202042598A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW108146683A 2019-01-09 2019-12-19 電漿處理裝置及電漿處理方法 TWI849020B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-001662 2019-01-09
JP2019001662 2019-01-09
JP2019018833 2019-02-05
JP2019-018833 2019-02-05

Publications (2)

Publication Number Publication Date
TW202042598A TW202042598A (zh) 2020-11-16
TWI849020B true TWI849020B (zh) 2024-07-21

Family

ID=71521294

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108146683A TWI849020B (zh) 2019-01-09 2019-12-19 電漿處理裝置及電漿處理方法

Country Status (7)

Country Link
US (1) US20220084787A1 (https=)
JP (4) JP7297795B2 (https=)
KR (2) KR102927410B1 (https=)
CN (2) CN119153304A (https=)
SG (1) SG11202107162UA (https=)
TW (1) TWI849020B (https=)
WO (1) WO2020145051A1 (https=)

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US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
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US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
JP7737401B2 (ja) 2020-12-10 2025-09-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
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US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
CN118872034A (zh) * 2022-03-31 2024-10-29 东京毅力科创株式会社 等离子体处理装置
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
JP7761537B2 (ja) * 2022-07-20 2025-10-28 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
JP2024094788A (ja) 2022-12-28 2024-07-10 株式会社ダイヘン 高周波電源装置
WO2025057636A1 (ja) * 2023-09-15 2025-03-20 東京エレクトロン株式会社 プラズマ処理装置

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Also Published As

Publication number Publication date
CN113228830A (zh) 2021-08-06
JP7519507B2 (ja) 2024-07-19
KR102927410B1 (ko) 2026-02-13
JP2023115076A (ja) 2023-08-18
TW202431904A (zh) 2024-08-01
CN113228830B (zh) 2024-10-01
JP7297795B2 (ja) 2023-06-26
US20220084787A1 (en) 2022-03-17
WO2020145051A1 (ja) 2020-07-16
CN119153304A (zh) 2024-12-17
SG11202107162UA (en) 2021-07-29
KR20260018173A (ko) 2026-02-06
JP2024133658A (ja) 2024-10-02
JPWO2020145051A1 (ja) 2021-11-18
TW202042598A (zh) 2020-11-16
JP2025166257A (ja) 2025-11-05
KR20210111269A (ko) 2021-09-10
JP7734239B2 (ja) 2025-09-04

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