CN119096437A - 半导体发光元件、以及半导体发光元件的制造方法 - Google Patents
半导体发光元件、以及半导体发光元件的制造方法 Download PDFInfo
- Publication number
- CN119096437A CN119096437A CN202380035842.8A CN202380035842A CN119096437A CN 119096437 A CN119096437 A CN 119096437A CN 202380035842 A CN202380035842 A CN 202380035842A CN 119096437 A CN119096437 A CN 119096437A
- Authority
- CN
- China
- Prior art keywords
- layer
- ridge portion
- semiconductor light
- emitting element
- cladding layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 243
- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000005253 cladding Methods 0.000 claims abstract description 126
- 238000005530 etching Methods 0.000 claims description 81
- 239000000203 mixture Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 32
- 230000004888 barrier function Effects 0.000 claims description 27
- 238000002955 isolation Methods 0.000 claims description 20
- 238000001039 wet etching Methods 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 9
- 238000003475 lamination Methods 0.000 claims description 9
- 101150000350 TPC1 gene Proteins 0.000 claims description 6
- 238000013459 approach Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 411
- 230000004048 modification Effects 0.000 description 44
- 238000012986 modification Methods 0.000 description 44
- 238000009792 diffusion process Methods 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 230000003628 erosive effect Effects 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022073930 | 2022-04-28 | ||
| JP2022-073930 | 2022-04-28 | ||
| PCT/JP2023/016403 WO2023210676A1 (ja) | 2022-04-28 | 2023-04-26 | 半導体発光素子、及び半導体発光素子の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119096437A true CN119096437A (zh) | 2024-12-06 |
Family
ID=88519079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380035842.8A Pending CN119096437A (zh) | 2022-04-28 | 2023-04-26 | 半导体发光元件、以及半导体发光元件的制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2023210676A1 (https=) |
| CN (1) | CN119096437A (https=) |
| WO (1) | WO2023210676A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025134916A1 (ja) * | 2023-12-18 | 2025-06-26 | ローム株式会社 | 半導体発光装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133644A (ja) * | 2001-10-30 | 2003-05-09 | Sharp Corp | 半導体レーザ装置とそれを用いた光ディスク装置 |
| JP2006073818A (ja) * | 2004-09-02 | 2006-03-16 | Sharp Corp | 半導体素子、半導体素子の製造方法、光ディスク装置および光伝送システム |
| JP2008182177A (ja) * | 2006-12-28 | 2008-08-07 | Victor Co Of Japan Ltd | 半導体レーザ素子 |
| JP2013025208A (ja) * | 2011-07-25 | 2013-02-04 | Furukawa Electric Co Ltd:The | 半導体光素子及び半導体光素子の製造方法 |
| KR20130120266A (ko) * | 2012-04-25 | 2013-11-04 | 한국전자통신연구원 | 분포 궤환형 레이저 다이오드 |
| WO2022064626A1 (ja) * | 2020-09-25 | 2022-03-31 | 三菱電機株式会社 | 半導体レーザ装置 |
| JP7558036B2 (ja) * | 2020-11-18 | 2024-09-30 | シャープ福山レーザー株式会社 | レーザ素子 |
-
2023
- 2023-04-26 JP JP2024517366A patent/JPWO2023210676A1/ja active Pending
- 2023-04-26 CN CN202380035842.8A patent/CN119096437A/zh active Pending
- 2023-04-26 WO PCT/JP2023/016403 patent/WO2023210676A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023210676A1 (https=) | 2023-11-02 |
| WO2023210676A1 (ja) | 2023-11-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |