JPWO2023210676A1 - - Google Patents
Info
- Publication number
- JPWO2023210676A1 JPWO2023210676A1 JP2024517366A JP2024517366A JPWO2023210676A1 JP WO2023210676 A1 JPWO2023210676 A1 JP WO2023210676A1 JP 2024517366 A JP2024517366 A JP 2024517366A JP 2024517366 A JP2024517366 A JP 2024517366A JP WO2023210676 A1 JPWO2023210676 A1 JP WO2023210676A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022073930 | 2022-04-28 | ||
| PCT/JP2023/016403 WO2023210676A1 (ja) | 2022-04-28 | 2023-04-26 | 半導体発光素子、及び半導体発光素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023210676A1 true JPWO2023210676A1 (https=) | 2023-11-02 |
| JPWO2023210676A5 JPWO2023210676A5 (https=) | 2025-01-15 |
Family
ID=88519079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024517366A Pending JPWO2023210676A1 (https=) | 2022-04-28 | 2023-04-26 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2023210676A1 (https=) |
| CN (1) | CN119096437A (https=) |
| WO (1) | WO2023210676A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025134916A1 (ja) * | 2023-12-18 | 2025-06-26 | ローム株式会社 | 半導体発光装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133644A (ja) * | 2001-10-30 | 2003-05-09 | Sharp Corp | 半導体レーザ装置とそれを用いた光ディスク装置 |
| JP2006073818A (ja) * | 2004-09-02 | 2006-03-16 | Sharp Corp | 半導体素子、半導体素子の製造方法、光ディスク装置および光伝送システム |
| JP2008182177A (ja) * | 2006-12-28 | 2008-08-07 | Victor Co Of Japan Ltd | 半導体レーザ素子 |
| JP2013025208A (ja) * | 2011-07-25 | 2013-02-04 | Furukawa Electric Co Ltd:The | 半導体光素子及び半導体光素子の製造方法 |
| KR20130120266A (ko) * | 2012-04-25 | 2013-11-04 | 한국전자통신연구원 | 분포 궤환형 레이저 다이오드 |
| WO2022064626A1 (ja) * | 2020-09-25 | 2022-03-31 | 三菱電機株式会社 | 半導体レーザ装置 |
| JP7558036B2 (ja) * | 2020-11-18 | 2024-09-30 | シャープ福山レーザー株式会社 | レーザ素子 |
-
2023
- 2023-04-26 JP JP2024517366A patent/JPWO2023210676A1/ja active Pending
- 2023-04-26 CN CN202380035842.8A patent/CN119096437A/zh active Pending
- 2023-04-26 WO PCT/JP2023/016403 patent/WO2023210676A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN119096437A (zh) | 2024-12-06 |
| WO2023210676A1 (ja) | 2023-11-02 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241024 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260422 |