CN1190643A - 金刚石基片在至少一个金属基片上的接合方法 - Google Patents

金刚石基片在至少一个金属基片上的接合方法 Download PDF

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CN1190643A
CN1190643A CN97121247A CN97121247A CN1190643A CN 1190643 A CN1190643 A CN 1190643A CN 97121247 A CN97121247 A CN 97121247A CN 97121247 A CN97121247 A CN 97121247A CN 1190643 A CN1190643 A CN 1190643A
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substrate
diamond
metal substrate
hot pressing
aluminium foil
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阿兰·珀蒂邦
埃里克·郎希
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Alcatel Lucent SAS
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    • H01—ELECTRIC ELEMENTS
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Abstract

本发明涉及一种金刚石基片在至少一个金属基片上的接合方法,根据本发明:金刚石基片的至少一面由一层铝箔覆盖;金刚石基片及铝箔置于一控制气氛的室内,并通过在氩气或真空中的第一步热压接合在一起,形成一多层复合基片;多层复合基片置于一金属基片上,铝箔表面与金属基片相接触;多层复合基片及金属基片通过第二步热压而接合。

Description

金刚石基片在至少一个金属基片上的接合方法
在动力电子组件中，需要冷却具有相当高的电位的动力电子元件。
一种传统的冷却手段包括将元件焊接在一铜导轨上，铜导轨本身安装于一氮化铝型或同等类型的电绝缘陶瓷材料上，陶瓷材料用于将高电位的元件和铜导轨与底板和接地的冷却装置隔离开。
铜导轨/AlN陶瓷的多层结构非常适合动力元件的电绝缘，但是，为了制造这种多层结构而使用的众多的接触界面、焊料、胶及油脂共同形成了相当大的总热阻(对于625微米的AlN和300微米的Cu大约是15×10-6开/瓦)，该热阻影响所述结构通过其本身或一冷却装置适当地排除动力元件的焦耳热损耗的能力。
而且，电位越高，陶瓷介质层就越重要，然而，众所周知，陶瓷介质不是热的良导体。
人们知道，使用人造金刚石的好处是，它是非常好的电绝缘体，同时又具有约10倍于AlN的导热性(金刚石：1500瓦/米·开；AlN：180瓦/米·开)。
一层人造金刚石基片在一铜质或铝质导轨上的接合通常包括：
运用PVD技术的镀金属的第一步骤：向人造金刚石基片上镀一薄层钛、铂或金；
焊接的第二步骤：用传统的焊接方法，将金刚石/Ti，Pt，Au复合基片焊接于铜质或铝质导轨上。
相对于AlN复合层，上述方法的散热增益为25-30％。
但考虑到人造金刚石的导热性能，与期望值相比，这种提高太小了。
这是由于焊接产生了一相当大的热阻(对于300微米的金刚石、100微米的焊料和300微米的Cu而言，总热阻约为13×10-6开/瓦，其中12×10-6开/瓦是由焊料和接触界面导致的)。
而且，人造金刚石太高的购买成本使得其生产成本/散热增益比大大高于所述AlN技术，从而阻碍了大批量的使用。
本发明的一个目的就是提出一种方法，以实现金属基片和金刚石基片的接合，同时具有热阻减小的接触界面。
为此，本发明涉及一种将一层金刚石基片接合于至少一个金属基片上的方法。根据本发明方法的各个步骤：
金刚石基片的至少一面由一层铝箔覆盖；
所述金刚石基片及所述铝箔置于一控制气氛的室内，并通过在氩气或真空中的第一步热压接合在一起，从而形成一多层复合基片；
所述多层复合基片置于一金属基片上，铝箔表面与金属基片相接触；
所述多层复合基片及所述金属基片通过第二步热压而接合。
在一种实施变型中，所述多层复合基片包括一层金刚石基片和两层铝箔，前者夹于后者之间，而且金属基片同每一铝箔相接合。
在本发明方法的第一步热压的一种实施方式中，热压温度在550-650℃之间，热压所施加的压强在100-150千克/平方厘米之间。
在金属基片为铜的情况下，第二步热压的温度在500-550℃之间，第二步热压所施加的压强在100-150千克/平方厘米之间。
本发明的其它优点和特点将在下面的描述中表现出来。
所述热压明显减小了不同物质之间接触界面的热阻。
但是，为直接将铜向金刚石类型的薄片上热压，温度应约在1000℃。而众所周知，CVD金刚石在超过800-900℃时是不稳定的，会转变为石墨。
为弥补上述严重缺陷，根据本发明，将金刚石基片与至少一个金属基片相接合的方法是基于两个热压步骤。
第一步热压是对金刚石基片和至少一层铝箔进行。
金刚石基片的一面由一层铝箔所覆盖；
金刚石基片/铝箔复合体放置于一控制气氛的热压室内；
热压的第一步在氩气或真空中进行，将铝箔和金刚石基片接合在一起，从而形成一多层复合基片。在一种实施变型中，金刚石基片夹于两层铝箔之间，热压温度约为600℃，在该温度下，CVD金刚石是完全稳定的。
在第一步热压中完成的多层复合基片被放置到一个(或若干)金属基片上，铝箔表面与金属基片相接触；
第二步热压将铝箔表面与金属基片接合起来。同样，热压温度约在600℃。
在根据本发明的第一步热压的实施方式中，热压温度在550-650℃之间，热压所施加的压强在100-150千克/平方厘米之间。
在金属基片为铜的情况下，第二步热压的温度在500-550℃之间，第二步热压所施加的压强在100-150千克/平方厘米之间。
在本发明的一个非限制性的实施例中，实现了300微米的金刚石基片、100微米的铝箔和300微米的铜基片之间的接合，其总热阻为2.9×10-6，比现有技术减少了5倍。
许多优点都直接来自所述热阻的降低。
一方面，尽管金刚石的购买成本约10倍于AlN，热阻的降低仍使金刚石的使用具有竞争力。
另一方面，通过减小绝缘体的厚度和散热装置的体积，又可以减小动力电子组件的体积。
最后，对于相同的尺寸，可以使得通过电子组件的功率更强大。
当然，本发明不局限于前面所描述的实施方式，本领域的技术人员可以实施多种变型而不脱离本发明的范畴。尤其是，金属基片可以不是铜的，铝箔同样也可以由其它任何允许与金刚石基片和金属基片热压接合的材料所代替，前提是热压温度低于金刚石的转变温度。

Claims (5)

1.金刚石基片在至少一个金属基片上的接合方法，其特征在于：
金刚石基片的至少一面由一层铝箔覆盖；
所述金刚石基片及所述铝箔置于一控制气氛的室内，并通过在氩气或真空中的第一步热压接合在一起，从而形成一多层复合基片；
所述多层复合基片被置于一金属基片上，铝箔表面与金属基片相接触；
所述多层复合基片及所述金属基片通过第二步热压而接合。
2.根据权利要求1所述的方法，其特征在于，所述金刚石基片夹于两层铝箔之间。
3.根据权利要求1或2所述的方法，其特征在于，在第一步热压时，热压温度在550-650℃之间，热压所施加的压强在100-150千克/平方厘米之间。
4.根据权利要求1至3之一所述的方法，其特征在于，所述金属基片为铜基片。
5.根据权利要求4所述的方法，其特征在于，所述第二步热压的温度在500-550℃之间，第二步热压所施加的压强在100-150千克/平方厘米之间。
CN97121247A 1996-10-31 1997-10-30 金刚石基片在至少一个金属基片上的接合方法 Pending CN1190643A (zh)

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FR9613321 1996-10-31
FR9613321A FR2755129B1 (fr) 1996-10-31 1996-10-31 Procede de liaison d'un substrat de diamant a au moins un substrat metallique

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104858435A (zh) * 2015-05-12 2015-08-26 东南大学 一种三明治结构金刚石-Al复合材料的制备方法
CN110335798A (zh) * 2019-06-21 2019-10-15 西安交通大学 一种金刚石输能窗及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9920384D0 (en) * 1999-08-28 1999-11-03 De Beers Ind Diamond Joining of cvd diamond bodies to metal structures
KR101068115B1 (ko) * 2009-04-03 2011-09-27 한밭대학교 산학협력단 이미지 센서 플립칩 접속용 유리기판의 제조방법
CN114214552A (zh) * 2021-12-02 2022-03-22 广东工业大学 一种金刚石制品及其制造方法

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US3922775A (en) * 1973-09-13 1975-12-02 Sperry Rand Corp High frequency diode and manufacture thereof
EP0435423B1 (en) * 1989-12-20 1995-03-29 Sumitomo Electric Industries, Ltd. A bonding tool
US5423475A (en) * 1993-10-06 1995-06-13 Westinghouse Electric Corporation Diamond coatings for aluminum alloys
EP0717125A1 (en) * 1994-12-15 1996-06-19 General Electric Company Bonding of diamond to a substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104858435A (zh) * 2015-05-12 2015-08-26 东南大学 一种三明治结构金刚石-Al复合材料的制备方法
CN110335798A (zh) * 2019-06-21 2019-10-15 西安交通大学 一种金刚石输能窗及其制备方法

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EP0840373B1 (fr) 2003-05-07
DE69721693D1 (de) 2003-06-12
DE69721693T2 (de) 2004-03-04
EP0840373A1 (fr) 1998-05-06
CA2217790A1 (fr) 1998-04-30
FR2755129B1 (fr) 1998-11-27
KR19990033885A (ko) 1999-05-15
FR2755129A1 (fr) 1998-04-30
JPH10138052A (ja) 1998-05-26

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