CN1190643A - 金刚石基片在至少一个金属基片上的接合方法 - Google Patents
金刚石基片在至少一个金属基片上的接合方法 Download PDFInfo
- Publication number
- CN1190643A CN1190643A CN97121247A CN97121247A CN1190643A CN 1190643 A CN1190643 A CN 1190643A CN 97121247 A CN97121247 A CN 97121247A CN 97121247 A CN97121247 A CN 97121247A CN 1190643 A CN1190643 A CN 1190643A
- Authority
- CN
- China
- Prior art keywords
- substrate
- diamond
- metal substrate
- hot pressing
- aluminium foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/121—Metallic interlayers based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/363—Carbon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
- C04B2237/407—Copper
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Ceramic Products (AREA)
- Laminated Bodies (AREA)
Abstract
本发明涉及一种金刚石基片在至少一个金属基片上的接合方法,根据本发明:金刚石基片的至少一面由一层铝箔覆盖;金刚石基片及铝箔置于一控制气氛的室内,并通过在氩气或真空中的第一步热压接合在一起,形成一多层复合基片;多层复合基片置于一金属基片上,铝箔表面与金属基片相接触;多层复合基片及金属基片通过第二步热压而接合。
Description
在动力电子组件中,需要冷却具有相当高的电位的动力电子元件。
一种传统的冷却手段包括将元件焊接在一铜导轨上,铜导轨本身安装于一氮化铝型或同等类型的电绝缘陶瓷材料上,陶瓷材料用于将高电位的元件和铜导轨与底板和接地的冷却装置隔离开。
铜导轨/AlN陶瓷的多层结构非常适合动力元件的电绝缘,但是,为了制造这种多层结构而使用的众多的接触界面、焊料、胶及油脂共同形成了相当大的总热阻(对于625微米的AlN和300微米的Cu大约是15×10-6开/瓦),该热阻影响所述结构通过其本身或一冷却装置适当地排除动力元件的焦耳热损耗的能力。
而且,电位越高,陶瓷介质层就越重要,然而,众所周知,陶瓷介质不是热的良导体。
人们知道,使用人造金刚石的好处是,它是非常好的电绝缘体,同时又具有约10倍于AlN的导热性(金刚石:1500瓦/米·开;AlN:180瓦/米·开)。
一层人造金刚石基片在一铜质或铝质导轨上的接合通常包括:
运用PVD技术的镀金属的第一步骤:向人造金刚石基片上镀一薄层钛、铂或金;
焊接的第二步骤:用传统的焊接方法,将金刚石/Ti,Pt,Au复合基片焊接于铜质或铝质导轨上。
相对于AlN复合层,上述方法的散热增益为25-30%。
但考虑到人造金刚石的导热性能,与期望值相比,这种提高太小了。
这是由于焊接产生了一相当大的热阻(对于300微米的金刚石、100微米的焊料和300微米的Cu而言,总热阻约为13×10-6开/瓦,其中12×10-6开/瓦是由焊料和接触界面导致的)。
而且,人造金刚石太高的购买成本使得其生产成本/散热增益比大大高于所述AlN技术,从而阻碍了大批量的使用。
本发明的一个目的就是提出一种方法,以实现金属基片和金刚石基片的接合,同时具有热阻减小的接触界面。
为此,本发明涉及一种将一层金刚石基片接合于至少一个金属基片上的方法。根据本发明方法的各个步骤:
金刚石基片的至少一面由一层铝箔覆盖;
所述金刚石基片及所述铝箔置于一控制气氛的室内,并通过在氩气或真空中的第一步热压接合在一起,从而形成一多层复合基片;
所述多层复合基片置于一金属基片上,铝箔表面与金属基片相接触;
所述多层复合基片及所述金属基片通过第二步热压而接合。
在一种实施变型中,所述多层复合基片包括一层金刚石基片和两层铝箔,前者夹于后者之间,而且金属基片同每一铝箔相接合。
在本发明方法的第一步热压的一种实施方式中,热压温度在550-650℃之间,热压所施加的压强在100-150千克/平方厘米之间。
在金属基片为铜的情况下,第二步热压的温度在500-550℃之间,第二步热压所施加的压强在100-150千克/平方厘米之间。
本发明的其它优点和特点将在下面的描述中表现出来。
所述热压明显减小了不同物质之间接触界面的热阻。
但是,为直接将铜向金刚石类型的薄片上热压,温度应约在1000℃。而众所周知,CVD金刚石在超过800-900℃时是不稳定的,会转变为石墨。
为弥补上述严重缺陷,根据本发明,将金刚石基片与至少一个金属基片相接合的方法是基于两个热压步骤。
第一步热压是对金刚石基片和至少一层铝箔进行。
金刚石基片的一面由一层铝箔所覆盖;
金刚石基片/铝箔复合体放置于一控制气氛的热压室内;
热压的第一步在氩气或真空中进行,将铝箔和金刚石基片接合在一起,从而形成一多层复合基片。在一种实施变型中,金刚石基片夹于两层铝箔之间,热压温度约为600℃,在该温度下,CVD金刚石是完全稳定的。
在第一步热压中完成的多层复合基片被放置到一个(或若干)金属基片上,铝箔表面与金属基片相接触;
第二步热压将铝箔表面与金属基片接合起来。同样,热压温度约在600℃。
在根据本发明的第一步热压的实施方式中,热压温度在550-650℃之间,热压所施加的压强在100-150千克/平方厘米之间。
在金属基片为铜的情况下,第二步热压的温度在500-550℃之间,第二步热压所施加的压强在100-150千克/平方厘米之间。
在本发明的一个非限制性的实施例中,实现了300微米的金刚石基片、100微米的铝箔和300微米的铜基片之间的接合,其总热阻为2.9×10-6,比现有技术减少了5倍。
许多优点都直接来自所述热阻的降低。
一方面,尽管金刚石的购买成本约10倍于AlN,热阻的降低仍使金刚石的使用具有竞争力。
另一方面,通过减小绝缘体的厚度和散热装置的体积,又可以减小动力电子组件的体积。
最后,对于相同的尺寸,可以使得通过电子组件的功率更强大。
当然,本发明不局限于前面所描述的实施方式,本领域的技术人员可以实施多种变型而不脱离本发明的范畴。尤其是,金属基片可以不是铜的,铝箔同样也可以由其它任何允许与金刚石基片和金属基片热压接合的材料所代替,前提是热压温度低于金刚石的转变温度。
Claims (5)
1.金刚石基片在至少一个金属基片上的接合方法,其特征在于:
金刚石基片的至少一面由一层铝箔覆盖;
所述金刚石基片及所述铝箔置于一控制气氛的室内,并通过在氩气或真空中的第一步热压接合在一起,从而形成一多层复合基片;
所述多层复合基片被置于一金属基片上,铝箔表面与金属基片相接触;
所述多层复合基片及所述金属基片通过第二步热压而接合。
2.根据权利要求1所述的方法,其特征在于,所述金刚石基片夹于两层铝箔之间。
3.根据权利要求1或2所述的方法,其特征在于,在第一步热压时,热压温度在550-650℃之间,热压所施加的压强在100-150千克/平方厘米之间。
4.根据权利要求1至3之一所述的方法,其特征在于,所述金属基片为铜基片。
5.根据权利要求4所述的方法,其特征在于,所述第二步热压的温度在500-550℃之间,第二步热压所施加的压强在100-150千克/平方厘米之间。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9613321 | 1996-10-31 | ||
FR9613321A FR2755129B1 (fr) | 1996-10-31 | 1996-10-31 | Procede de liaison d'un substrat de diamant a au moins un substrat metallique |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1190643A true CN1190643A (zh) | 1998-08-19 |
Family
ID=9497229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97121247A Pending CN1190643A (zh) | 1996-10-31 | 1997-10-30 | 金刚石基片在至少一个金属基片上的接合方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6006979A (zh) |
EP (1) | EP0840373B1 (zh) |
JP (1) | JPH10138052A (zh) |
KR (1) | KR19990033885A (zh) |
CN (1) | CN1190643A (zh) |
CA (1) | CA2217790A1 (zh) |
DE (1) | DE69721693T2 (zh) |
FR (1) | FR2755129B1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104858435A (zh) * | 2015-05-12 | 2015-08-26 | 东南大学 | 一种三明治结构金刚石-Al复合材料的制备方法 |
CN110335798A (zh) * | 2019-06-21 | 2019-10-15 | 西安交通大学 | 一种金刚石输能窗及其制备方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9920384D0 (en) * | 1999-08-28 | 1999-11-03 | De Beers Ind Diamond | Joining of cvd diamond bodies to metal structures |
KR101068115B1 (ko) * | 2009-04-03 | 2011-09-27 | 한밭대학교 산학협력단 | 이미지 센서 플립칩 접속용 유리기판의 제조방법 |
CN114214552A (zh) * | 2021-12-02 | 2022-03-22 | 广东工业大学 | 一种金刚石制品及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3922775A (en) * | 1973-09-13 | 1975-12-02 | Sperry Rand Corp | High frequency diode and manufacture thereof |
EP0435423B1 (en) * | 1989-12-20 | 1995-03-29 | Sumitomo Electric Industries, Ltd. | A bonding tool |
US5423475A (en) * | 1993-10-06 | 1995-06-13 | Westinghouse Electric Corporation | Diamond coatings for aluminum alloys |
EP0717125A1 (en) * | 1994-12-15 | 1996-06-19 | General Electric Company | Bonding of diamond to a substrate |
-
1996
- 1996-10-31 FR FR9613321A patent/FR2755129B1/fr not_active Expired - Fee Related
-
1997
- 1997-10-27 DE DE69721693T patent/DE69721693T2/de not_active Expired - Fee Related
- 1997-10-27 KR KR1019970055323A patent/KR19990033885A/ko not_active Application Discontinuation
- 1997-10-27 EP EP97402536A patent/EP0840373B1/fr not_active Expired - Lifetime
- 1997-10-30 US US08/961,236 patent/US6006979A/en not_active Expired - Fee Related
- 1997-10-30 CN CN97121247A patent/CN1190643A/zh active Pending
- 1997-10-30 CA CA002217790A patent/CA2217790A1/fr not_active Abandoned
- 1997-10-31 JP JP9300179A patent/JPH10138052A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104858435A (zh) * | 2015-05-12 | 2015-08-26 | 东南大学 | 一种三明治结构金刚石-Al复合材料的制备方法 |
CN110335798A (zh) * | 2019-06-21 | 2019-10-15 | 西安交通大学 | 一种金刚石输能窗及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US6006979A (en) | 1999-12-28 |
EP0840373B1 (fr) | 2003-05-07 |
DE69721693D1 (de) | 2003-06-12 |
DE69721693T2 (de) | 2004-03-04 |
EP0840373A1 (fr) | 1998-05-06 |
CA2217790A1 (fr) | 1998-04-30 |
FR2755129B1 (fr) | 1998-11-27 |
KR19990033885A (ko) | 1999-05-15 |
FR2755129A1 (fr) | 1998-04-30 |
JPH10138052A (ja) | 1998-05-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1453089B1 (en) | Semiconductor substrates of high reliability | |
KR0173782B1 (ko) | 전기 또는 전자회로의 성형에 사용되는 세라믹기판 | |
CN111403347B (zh) | 一种高可靠性氮化硅覆铜陶瓷基板的铜瓷界面结构及其制备方法 | |
JP5852795B2 (ja) | 低温加圧焼結接合を含む2個の接合素子の構成体の製造方法 | |
CN1862795A (zh) | 接线板 | |
EP0788153B1 (en) | Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same | |
IL168429A (en) | A semiconductor substrate with a diamond / copper composite material and a method for its production | |
US5645937A (en) | Thin film layered member | |
Erskine et al. | Brazing perovskite ceramics with silver/copper oxide braze alloys | |
US5155665A (en) | Bonded ceramic-metal composite substrate, circuit board constructed therewith and methods for production thereof | |
CN1190643A (zh) | 金刚石基片在至少一个金属基片上的接合方法 | |
JP3928488B2 (ja) | 半導体装置およびその製造方法 | |
US3492545A (en) | Electrically and thermally conductive malleable layer embodying lead foil | |
JPS63124555A (ja) | 半導体装置用基板 | |
JP3794454B2 (ja) | 窒化物セラミックス基板 | |
JP2000335983A (ja) | 接合体の製造方法 | |
US8835817B2 (en) | Heating unit comprising a heat resistance element shaped as a conductive pattern | |
CN102569213A (zh) | Dbc板绝缘结构 | |
JPH03261672A (ja) | 窒化アルミニウムと金属材とからなる接合体の構造 | |
JP2001089257A (ja) | Al回路板用ろう材とそれを用いたセラミックス回路基板 | |
EP0388278A1 (fr) | Procédé d'élaboration de moyens de connexions électriques, en particulier de substrats d'interconnexion pour circuits hybrides | |
JPH0337310B2 (zh) | ||
JPH09172247A (ja) | セラミックス回路基板およびその製造方法 | |
KR101531312B1 (ko) | 구리-세라믹 층상 복합소재 및 그 제조방법 | |
CN118431179A (zh) | 一种复合基板及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Applicant after: Alcatel N. V. Applicant before: Alcatel Alsthom Compagnie Generale D'Electricite |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: ALCATEL ALSTHOM COMPAGNIE GENERALE D ELECTRICITE TO: ALCATEL CORP. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
AD01 | Patent right deemed abandoned | ||
C20 | Patent right or utility model deemed to be abandoned or is abandoned |