CN119032149A - 研磨剂及研磨方法 - Google Patents

研磨剂及研磨方法 Download PDF

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Publication number
CN119032149A
CN119032149A CN202280094962.0A CN202280094962A CN119032149A CN 119032149 A CN119032149 A CN 119032149A CN 202280094962 A CN202280094962 A CN 202280094962A CN 119032149 A CN119032149 A CN 119032149A
Authority
CN
China
Prior art keywords
mass
abrasive
polishing
less
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280094962.0A
Other languages
English (en)
Chinese (zh)
Inventor
花野真之
川北纯平
芳贺浩二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Resonac Corp filed Critical Resonac Corp
Publication of CN119032149A publication Critical patent/CN119032149A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN202280094962.0A 2022-04-20 2022-04-20 研磨剂及研磨方法 Pending CN119032149A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/018286 WO2023203680A1 (ja) 2022-04-20 2022-04-20 研磨剤及び研磨方法

Publications (1)

Publication Number Publication Date
CN119032149A true CN119032149A (zh) 2024-11-26

Family

ID=88419450

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280094962.0A Pending CN119032149A (zh) 2022-04-20 2022-04-20 研磨剂及研磨方法

Country Status (6)

Country Link
US (1) US20250188315A1 (https=)
EP (1) EP4495204A4 (https=)
JP (1) JPWO2023203680A1 (https=)
KR (1) KR20250006078A (https=)
CN (1) CN119032149A (https=)
WO (1) WO2023203680A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3957924B2 (ja) * 1999-06-28 2007-08-15 株式会社東芝 Ｃｍｐ研磨方法
JP2007154176A (ja) * 2005-11-11 2007-06-21 Hitachi Chem Co Ltd Ｉｔｏ膜研磨用研磨液及び基板の研磨方法
TWI341325B (en) 2006-02-14 2011-05-01 Cabot Microelectronics Corp Compositions and methods for cmp of indium tin oxide surfaces
KR101004858B1 (ko) 2008-11-06 2010-12-28 삼성엘이디 주식회사 화합물 반도체 발광 소자 및 그 제조방법
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
JP6642599B2 (ja) 2018-02-20 2020-02-05 ソニー株式会社 受光素子、撮像素子及び撮像装置
KR20200032601A (ko) * 2018-09-18 2020-03-26 주식회사 케이씨텍 연마용 슬러리 조성물
KR20200032602A (ko) * 2018-09-18 2020-03-26 주식회사 케이씨텍 연마용 슬러리 조성물
KR102185042B1 (ko) * 2018-11-27 2020-12-01 주식회사 케이씨텍 연마용 슬러리 조성물
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
KR20210052694A (ko) * 2019-10-30 2021-05-11 삼성전자주식회사 Ito막 연마용 cmp 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법

Also Published As

Publication number Publication date
WO2023203680A1 (ja) 2023-10-26
EP4495204A4 (en) 2025-04-23
EP4495204A1 (en) 2025-01-22
JPWO2023203680A1 (https=) 2023-10-26
US20250188315A1 (en) 2025-06-12
KR20250006078A (ko) 2025-01-10

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