CN1189760C - Photoelectronic integrated acceleration geophone - Google Patents
Photoelectronic integrated acceleration geophone Download PDFInfo
- Publication number
- CN1189760C CN1189760C CNB031004334A CN03100433A CN1189760C CN 1189760 C CN1189760 C CN 1189760C CN B031004334 A CNB031004334 A CN B031004334A CN 03100433 A CN03100433 A CN 03100433A CN 1189760 C CN1189760 C CN 1189760C
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- waveguide
- silicon
- photodetector
- integrated
- chip
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Abstract
The present invention discloses a photoelectronic integrated acceleration and seismic wave detector which belongs to acceleration and seismic wave detectors. A chip and a laser device of the utility model photoelectronic integrated acceleration and seismic wave detector are arranged in a metal casing. The present invention is characterized in that the chip is formed from a silicon dioxide buffering layer covered on a silicone base bottom, and an optical waveguide polarizer, an M-Z waveguide interferometer, an acoustic-optic finger transducer, a photoelectric detector, a temperature compensating and regulating circuit and a signal processing circuit which are integrated on the silicone base bottom, and a silicon gauge block supported by crossed beams is etched on the silicone base bottom to form a simple harmonic oscillator; the input end of the M-Z waveguide interferometer is connected with the laser device, and the output end of the M-Z waveguide interferometer is connected with the photoelectric detector; a signal arm penetrates through one beam of the crossed silicon beams, and a reference arm is connected with a flat plate waveguide and the acoustic-optic finger transducer. The present invention can realize the detection with miniaturization, low cost for bulk production, wide frequency band, high sensitivity, high fidelity and electromagnetic interference resistance.
Description
Technical field
The present invention relates to the integrated acceleration detector of a kind of photoelectricity, belong to acceleration and earthquake wave detection device.
Background technology
At present mostly adopt traditional electromagnetic detector in field of seismic exploration, this type of wave detector volume is big, sensitivity is low, frequency band range is narrow, is subject to electromagnetic interference (EMI).The optical fiber acceleration wave detector also appears in the newspapers, but exists contradiction between the raising of its stability and the cost, and volume is too big.
Summary of the invention
The object of the present invention is to provide the integrated seismoreceiver of a kind of photoelectricity, this wave detector has that test frequency range is wide, highly sensitive, good, the anti-electromagnetic interference (EMI) of fidelity, cost is low and microminiaturized characteristics.
The technical solution adopted for the present invention to solve the technical problems is: integrated acceleration detector chip of photoelectricity and semiconductor laser 1 are set in metal shell, it is characterized in that chip is by silicon base 3, cover silicon dioxide cushion 13 on it and light waveguide polarizer 2, M-Z Waveguide interference instrument 12, acousto-optic finger-like transducer 9, photodetector 7, temperature compensation and the demodulation and the signal processing circuit that are integrated on the silicon base are formed; On silicon base, etch the siliceous gauge block 4 formation simple harmonic oscillators that rood beam supports; The input end of M-Z Waveguide interference instrument links to each other with semiconductor laser 1 by light waveguide polarizer 2, and output terminal links to each other with photodetector 7, and signal arm 6 wherein is connected with photodetector 7 by the wherein beam of light waveguide polarizer 2 by cross silicon beam; Reference arm 11 by light waveguide polarizer 2 by be connected with photodetector 7 again after planar waveguide 10, acousto-optic finger-like transducer 9 links to each other,
Useful result of the present invention is, because photoelectricity is integrated, thereby this wave detector can be realized microminiaturization, the low-cost batch process in batches, and broadband, high sensitivity, fidelity are good, the detection of anti-electromagnetic interference (EMI).
Description of drawings
The integrated acceleration detector structured flowchart of Fig. 1 photoelectricity.
Fig. 2 is the A-A fragmentary cross-sectional view of Fig. 1.
1. semiconductor lasers among the figure, 2. light waveguide polarizer, 3. silicon base, 4. siliceous gauge block, 5. silicon crossbeam, a 6. waveguide 1 (as the signal arm of M-Z interferometer), 7. photodetector, 8. signal processing LSI, 9. acousto-optic finger-like transducer, 10. planar waveguide, 11. waveguides 2 (as the reference arm of M-Z interferometer), 12.M-Z interferometer, 13.SiO
2Cushion
Embodiment
Erode away the siliceous gauge block 4 of rood beam structure on the silicon base 3, and on silicon base sputter silicon dioxide cushion 13, on the silicon dioxide cushion, make waveguide M-Z interferometer 12 (signal arm of interferometer is through one of rood beams).The natural light that sends when semiconductor laser 1 is coupled into the input end of M-Z interferometer, becomes polarized light behind light waveguide polarizer 2, divides two-way to enter two arms 6 and 11 of M-Z interferometer.Because the vibration of mass, light phase in signal arm 6 changes, the two-beam of in arm 6 and 11, propagating, after the output terminal of M-Z interferometer converges the formation interference, its light intensity is surveyed by photodetector 7, handle through the signal processing circuit 8 that is integrated on silica-based, realize the high Precision Detection of acceleration signal.The modulation of signal and temperature compensation are by planar waveguide 10 and finger-like transducer 9 and related circuit 8 realizations.
When applying an acceleration a, siliceous gauge block 4 produces vibration, causes the distortion of silicon crossbeam 5, and then makes the waveguide distortion and produce variations in refractive index, thereby the light phase in the signal arm 6 is changed.
Claims (1)
1, the integrated acceleration detector of a kind of photoelectricity, integrated acceleration detector chip of photoelectricity and semiconductor laser (1) are set in metal shell, it is characterized in that chip is by silicon base (3), cover silicon dioxide cushion (13) on it and light waveguide polarizer (2), M-Z Waveguide interference instrument (12), acousto-optic finger-like transducer (9), photodetector (7), temperature compensation and the demodulation and the signal processing circuit that are integrated on the silicon base are formed; On silicon base, etch siliceous gauge block (4) the formation simple harmonic oscillator that rood beam supports; The input end of M-Z Waveguide interference instrument links to each other with semiconductor laser (1) by light waveguide polarizer (2), output terminal links to each other with photodetector (7), signal arm wherein (6) is connected with photodetector (7) by the wherein beam of light waveguide polarizer (2) by cross silicon beam, reference arm (11) by light waveguide polarizer (2) by be connected with photodetector (7) again after planar waveguide (10), acousto-optic finger-like transducer (9) are continuous.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031004334A CN1189760C (en) | 2003-01-14 | 2003-01-14 | Photoelectronic integrated acceleration geophone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031004334A CN1189760C (en) | 2003-01-14 | 2003-01-14 | Photoelectronic integrated acceleration geophone |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1425926A CN1425926A (en) | 2003-06-25 |
| CN1189760C true CN1189760C (en) | 2005-02-16 |
Family
ID=4789830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031004334A Expired - Fee Related CN1189760C (en) | 2003-01-14 | 2003-01-14 | Photoelectronic integrated acceleration geophone |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1189760C (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388009C (en) * | 2004-12-31 | 2008-05-14 | 朱军 | Core of piezoelectric acceleration seismic detector |
| CN102032943B (en) * | 2010-12-15 | 2012-07-04 | 常州赛杰电子信息有限公司 | Self-calibrated three-shaft vibration monitoring and environment monitoring acquisition system |
| CN103777233B (en) * | 2014-01-22 | 2017-05-17 | 西安森舍电子科技有限责任公司 | Seismic detector capable of carrying out temperature compensation on damping |
| CN106094009B (en) * | 2016-05-26 | 2018-03-27 | 招商局重庆交通科研设计院有限公司 | Reflection wave velocity observation system based on photoelectric sensor and acceleration transducer |
| CN107478861A (en) * | 2017-06-27 | 2017-12-15 | 浙江大学 | One kind plays light type photonic crystal waveguide accelerometer |
| CN109470885B (en) * | 2018-10-19 | 2020-11-24 | 浙江大学 | Monolithic integrated optical accelerometer |
| CN111505338B (en) * | 2020-05-03 | 2021-07-02 | 华中科技大学 | Magnetic feedback closed-loop acceleration sensor and temperature compensation method thereof |
| CN112057041B (en) * | 2020-08-07 | 2021-12-28 | 中国科学院深圳先进技术研究院 | Polarized photoacoustic imaging probe and photoacoustic imaging device |
-
2003
- 2003-01-14 CN CNB031004334A patent/CN1189760C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1425926A (en) | 2003-06-25 |
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