CN1188015C - 在有机光发射元件中沉积铝-锂合金阴极的方法 - Google Patents
在有机光发射元件中沉积铝-锂合金阴极的方法 Download PDFInfo
- Publication number
- CN1188015C CN1188015C CNB011246545A CN01124654A CN1188015C CN 1188015 C CN1188015 C CN 1188015C CN B011246545 A CNB011246545 A CN B011246545A CN 01124654 A CN01124654 A CN 01124654A CN 1188015 C CN1188015 C CN 1188015C
- Authority
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- China
- Prior art keywords
- organic light
- light emitting
- emitting element
- layer
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 229910001148 Al-Li alloy Inorganic materials 0.000 title claims description 24
- 239000001989 lithium alloy Substances 0.000 title claims description 9
- FCVHBUFELUXTLR-UHFFFAOYSA-N [Li].[AlH3] Chemical compound [Li].[AlH3] FCVHBUFELUXTLR-UHFFFAOYSA-N 0.000 title claims description 3
- 238000000151 deposition Methods 0.000 title description 39
- 239000000463 material Substances 0.000 claims abstract description 29
- 230000008016 vaporization Effects 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- 238000009834 vaporization Methods 0.000 claims description 16
- -1 aluminium-cesium Chemical compound 0.000 claims description 7
- 229910000733 Li alloy Inorganic materials 0.000 claims description 6
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- WUALQPNAHOKFBR-UHFFFAOYSA-N lithium silver Chemical compound [Li].[Ag] WUALQPNAHOKFBR-UHFFFAOYSA-N 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 2
- 230000008021 deposition Effects 0.000 abstract description 35
- 239000010410 layer Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000012546 transfer Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000007600 charging Methods 0.000 description 8
- 239000012044 organic layer Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 6
- 238000005401 electroluminescence Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 230000027756 respiratory electron transport chain Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- 229910017941 Ag—Li Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910007857 Li-Al Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910008447 Li—Al Inorganic materials 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000005915 ammonolysis reaction Methods 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 238000007701 flash-distillation Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002641 lithium Chemical group 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000001394 metastastic effect Effects 0.000 description 1
- 206010061289 metastatic neoplasm Diseases 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000004880 oxines Chemical class 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
样品标志 | 铝原子%(+/-0.25) | 锂原子%(+/-0.25) |
原料合金组分 | 95.50 | 4.50 |
样品1 | 95.42 | 4.58 |
样品2 | 96.10 | 3.90 |
样品3 | 95.10 | 4.90 |
样品4 | 95.40 | 4.60 |
元件 | ITO阴极厚度(nm) | NPB穴转移层厚度(nm) | Alq厚度(nm) | 铝锂合金阴极厚度(nm) | 在20mA/cm2下的发光度(cd/m2) | 在20mA/cm2下的发光度率 | CIEx | CIEy | 在20mA/cm2下的激励电压(+/-0.2v) |
元件1 | 75 | 150 | 75 | 200 | 670.75 | 3.35 | 0.34 | 0.54 | 8.10 |
元件2 | 75 | 150 | 75 | 200 | 687.5 | 3.44 | 0.34 | 0.54 | 8.00 |
元件3 | 75 | 150 | 75 | 200 | 680 | 3.40 | 0.34 | 0.54 | 8.50 |
Claims (3)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/627,204 US6676990B1 (en) | 2000-07-27 | 2000-07-27 | Method of depositing aluminum-lithium alloy cathode in organic light emitting devices |
US09/627,204 | 2000-07-27 | ||
US09/627204 | 2000-07-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1336781A CN1336781A (zh) | 2002-02-20 |
CN1188015C true CN1188015C (zh) | 2005-02-02 |
Family
ID=24513671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011246545A Expired - Lifetime CN1188015C (zh) | 2000-07-27 | 2001-07-27 | 在有机光发射元件中沉积铝-锂合金阴极的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6676990B1 (zh) |
EP (1) | EP1176647A3 (zh) |
JP (1) | JP2002151260A (zh) |
KR (1) | KR20020010080A (zh) |
CN (1) | CN1188015C (zh) |
TW (1) | TW508972B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100829738B1 (ko) * | 2002-04-12 | 2008-05-15 | 삼성에스디아이 주식회사 | 유기박막 형성장치의 가열용기 |
KR100921362B1 (ko) | 2002-06-19 | 2009-10-15 | 아사히 가라스 가부시키가이샤 | 유기 el 소자 제조용 증착장치의 챔버 세정방법 |
TWI258515B (en) | 2002-06-19 | 2006-07-21 | Asahi Glass Co Ltd | Method of cleaning chamber of vacuum evaporation apparatus for production of organic EL element |
TW574398B (en) * | 2002-10-25 | 2004-02-01 | Ritek Display Technology Corp | Evaporation method and equipment for evaporation |
US20050244580A1 (en) * | 2004-04-30 | 2005-11-03 | Eastman Kodak Company | Deposition apparatus for temperature sensitive materials |
US20050281948A1 (en) * | 2004-06-17 | 2005-12-22 | Eastman Kodak Company | Vaporizing temperature sensitive materials |
KR20060081015A (ko) * | 2005-01-06 | 2006-07-12 | 삼성에스디아이 주식회사 | 진공 증착기 |
KR100611673B1 (ko) * | 2005-01-31 | 2006-08-10 | 삼성에스디아이 주식회사 | 박막 형성 방법 및 유기전계발광소자의 제조 방법 |
US20070231490A1 (en) * | 2006-03-29 | 2007-10-04 | Eastman Kodak Company | Uniformly vaporizing metals and organic materials |
KR101222980B1 (ko) * | 2006-06-30 | 2013-01-17 | 엘지디스플레이 주식회사 | 증착 장비의 결정 센서의 재생 방법 |
US20090110807A1 (en) * | 2007-10-25 | 2009-04-30 | Applied Materials, Inc. | Method for coating and apparatus |
US20090217876A1 (en) * | 2008-02-28 | 2009-09-03 | Ceramic Technologies, Inc. | Coating System For A Ceramic Evaporator Boat |
JPWO2011016347A1 (ja) * | 2009-08-03 | 2013-01-10 | 株式会社アルバック | 有機el装置及び有機el装置の電極形成方法並びに有機el照明装置及び有機el照明装置の製造方法 |
DE102010062852A1 (de) * | 2010-12-10 | 2012-06-21 | Sb Limotive Company Ltd. | Ableiterfolie für eine Lithium-Ionen-Zelle, Lithium-Ionen-Akkumulator sowie Kraftfahrzeug mit einem Lithium-Ionen-Akkumulator |
JP5976830B2 (ja) * | 2012-10-19 | 2016-08-24 | 三菱重工業株式会社 | 蒸着材料供給方法、基板製造方法、制御装置および蒸着装置 |
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US3710352A (en) * | 1970-03-13 | 1973-01-09 | Micro Bit Corp | High speed-large storage capability electron beam accessed memory method and apparatus |
US3756193A (en) * | 1972-05-01 | 1973-09-04 | Battelle Memorial Institute | Coating apparatus |
US4356429A (en) | 1980-07-17 | 1982-10-26 | Eastman Kodak Company | Organic electroluminescent cell |
US4406252A (en) * | 1980-12-29 | 1983-09-27 | Rockwell International Corporation | Inductive heating arrangement for evaporating thin film alloy onto a substrate |
US4539507A (en) | 1983-03-25 | 1985-09-03 | Eastman Kodak Company | Organic electroluminescent devices having improved power conversion efficiencies |
IT1197806B (it) * | 1986-08-01 | 1988-12-06 | Metalvuoto Films Spa | Procedimento ed apparecchiatura per la realizzazione di pellicole metallizzate per condesatori elettrici e prodotti cosi' ottenuti |
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JP2000012218A (ja) * | 1998-06-23 | 2000-01-14 | Tdk Corp | 有機el素子の製造装置および製造方法 |
-
2000
- 2000-07-27 US US09/627,204 patent/US6676990B1/en not_active Expired - Lifetime
-
2001
- 2001-05-31 TW TW090113211A patent/TW508972B/zh not_active IP Right Cessation
- 2001-07-16 EP EP01202702A patent/EP1176647A3/en not_active Withdrawn
- 2001-07-24 KR KR1020010044361A patent/KR20020010080A/ko not_active Application Discontinuation
- 2001-07-27 CN CNB011246545A patent/CN1188015C/zh not_active Expired - Lifetime
- 2001-07-27 JP JP2001227823A patent/JP2002151260A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CN1336781A (zh) | 2002-02-20 |
EP1176647A2 (en) | 2002-01-30 |
TW508972B (en) | 2002-11-01 |
EP1176647A3 (en) | 2006-05-10 |
JP2002151260A (ja) | 2002-05-24 |
US6676990B1 (en) | 2004-01-13 |
KR20020010080A (ko) | 2002-02-02 |
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