CN1187604C - 分析材料成份的方法和装置 - Google Patents

分析材料成份的方法和装置 Download PDF

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Publication number
CN1187604C
CN1187604C CNB008076669A CN00807666A CN1187604C CN 1187604 C CN1187604 C CN 1187604C CN B008076669 A CNB008076669 A CN B008076669A CN 00807666 A CN00807666 A CN 00807666A CN 1187604 C CN1187604 C CN 1187604C
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China
Prior art keywords
diffraction
composition
semiconductor material
intensity
energy
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Expired - Fee Related
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CNB008076669A
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English (en)
Chinese (zh)
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CN1354832A (zh
Inventor
D·J·瓦利斯
A·M·凯尔
M·T·埃梅尼
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Qinetiq Ltd
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Qinetiq Ltd
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Publication date
Priority claimed from GBGB9905953.7A external-priority patent/GB9905953D0/en
Priority claimed from GB0000392A external-priority patent/GB0000392D0/en
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of CN1354832A publication Critical patent/CN1354832A/zh
Application granted granted Critical
Publication of CN1187604C publication Critical patent/CN1187604C/zh
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Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/50—Detectors
    • G01N2223/501—Detectors array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CNB008076669A 1999-03-16 2000-03-15 分析材料成份的方法和装置 Expired - Fee Related CN1187604C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB9905953.7 1999-03-16
GBGB9905953.7A GB9905953D0 (en) 1999-03-16 1999-03-16 Method and apparatus for the analysis of material composition
GB0000392A GB0000392D0 (en) 2000-01-11 2000-01-11 Method and apparatus for the analysis of material composition
GB0000392.1 2000-01-11

Publications (2)

Publication Number Publication Date
CN1354832A CN1354832A (zh) 2002-06-19
CN1187604C true CN1187604C (zh) 2005-02-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008076669A Expired - Fee Related CN1187604C (zh) 1999-03-16 2000-03-15 分析材料成份的方法和装置

Country Status (7)

Country Link
US (1) US6907107B1 (enExample)
EP (1) EP1163507A2 (enExample)
JP (1) JP2003532862A (enExample)
KR (1) KR20020011369A (enExample)
CN (1) CN1187604C (enExample)
AU (1) AU3180800A (enExample)
WO (1) WO2000055608A2 (enExample)

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* Cited by examiner, † Cited by third party
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WO2003050598A2 (en) * 2001-12-12 2003-06-19 The Regents Of The University Of California Integrated crystal mounting and alignment system for high-throughput biological crystallography
JP3889388B2 (ja) * 2003-10-06 2007-03-07 株式会社リガク 膜構造解析方法およびその装置
US7579616B2 (en) * 2007-04-10 2009-08-25 International Business Machines Corporation Four-terminal programmable via-containing structure and method of fabricating same
US7561269B2 (en) * 2007-12-14 2009-07-14 Tokyo Electron Limited Optical measurement system with systematic error correction
US8605858B2 (en) 2011-06-27 2013-12-10 Honeywell International Inc. Methods and systems for inspecting structures for crystallographic imperfections
US9835570B2 (en) * 2013-09-13 2017-12-05 The United States Of America As Represented By The Administrator Of Nasa X-ray diffraction (XRD) characterization methods for sigma=3 twin defects in cubic semiconductor (100) wafers
US9829448B2 (en) * 2014-10-30 2017-11-28 Bruker Jv Israel Ltd. Measurement of small features using XRF
KR102426344B1 (ko) * 2016-09-19 2022-07-27 소레크 뉴클리어 리서치 센터 샘플을 식별하는 ｘｒｆ 시스템과 방법
CN110767562B (zh) * 2019-09-23 2021-11-16 长江存储科技有限责任公司 薄膜物相含量的测量方法
US11341629B2 (en) 2020-07-02 2022-05-24 Pratt & Whitney Canada Corp. Systems and methods for generating an inspection image of an object from radiographic imaging
US20220198326A1 (en) * 2020-12-17 2022-06-23 Virtual Control Limited Spectral data processing for chemical analysis
CN113984852B (zh) * 2021-09-27 2023-07-07 泉州师范学院 一种基于第一性原理计算的异质结材料构建和表征方法
CN118156358B (zh) * 2024-05-11 2024-08-09 山东大学 SiC半导体探测器、矿石成分分析设备及方法

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
DE2637945C3 (de) 1976-08-23 1979-02-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Roentgen-pulverdiffraktometer
DE3439471A1 (de) 1984-10-27 1986-04-30 MTU Motoren- und Turbinen-Union München GmbH, 8000 München Verfahren und vorrichtung zum pruefen einkristalliner gegenstaende
US4575922A (en) 1984-11-05 1986-03-18 Burroughs Corporation Method of fabricating integrated circuits incorporating steps to detect presence of gettering sites
EP0186924A3 (en) 1984-12-31 1988-10-19 Koninklijke Philips Electronics N.V. Polycrystalline x-ray spectrometer
GB2169480B (en) 1985-01-03 1988-12-07 Erno Raumfahrttechnik Gmbh A method of non-destructive testing of structural members
DD270770A1 (de) * 1988-04-18 1989-08-09 Freiberg Bergakademie Roentgendiffraktometrisches untersuchungsverfahren zur ortsabhaengigen simultanen detektion von variationen des stoechometriezustandes und mikrodefekthaushaltes in einkristallinen verbindungsstrukturen
US5007072A (en) 1988-08-03 1991-04-09 Ion Track Instruments X-ray diffraction inspection system
US4928294A (en) 1989-03-24 1990-05-22 U.S. Government As Represented By The Director, National Security Agency Method and apparatus for line-modified asymmetric crystal topography
US5148458A (en) * 1990-01-18 1992-09-15 Clayton Ruud Method and apparatus for simultaneous phase composition and residual stress measurement by x-ray diffraction
FR2692700A1 (fr) * 1992-06-17 1993-12-24 Philips Electronique Lab Dispositif de traitement d'un signal mesure correspondant à l'intensité de rayons X réfléchie par une structure de couches multiples sur un substrat.
US5414747A (en) * 1993-02-22 1995-05-09 The Penn State Research Foundation Method and apparatus for in-process analysis of polycrystalline films and coatings by x-ray diffraction
GB2289833B (en) 1994-05-24 1998-04-22 Mitsubishi Electric Corp Method and apparatus for evaluating thin-film multilayer structure
DE19510168C2 (de) 1995-03-21 2001-09-13 Heimann Systems Gmbh & Co Verfahren und Vorrichtung zur Bestimmung von kristallinen und polykristallinen Materialien in einem Untersuchungsbereich
GB9519687D0 (en) * 1995-09-27 1995-11-29 Schlumberger Ltd Method of determining earth formation characteristics
US6577705B1 (en) * 2001-04-02 2003-06-10 William Chang Combinatorial material analysis using X-ray capillary optics

Also Published As

Publication number Publication date
CN1354832A (zh) 2002-06-19
EP1163507A2 (en) 2001-12-19
KR20020011369A (ko) 2002-02-08
US6907107B1 (en) 2005-06-14
WO2000055608A2 (en) 2000-09-21
WO2000055608A3 (en) 2001-02-08
JP2003532862A (ja) 2003-11-05
AU3180800A (en) 2000-10-04

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Termination date: 20100315