JP2003532862A - 材料組成を分析するための方法及び装置 - Google Patents
材料組成を分析するための方法及び装置Info
- Publication number
- JP2003532862A JP2003532862A JP2000605190A JP2000605190A JP2003532862A JP 2003532862 A JP2003532862 A JP 2003532862A JP 2000605190 A JP2000605190 A JP 2000605190A JP 2000605190 A JP2000605190 A JP 2000605190A JP 2003532862 A JP2003532862 A JP 2003532862A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- diffraction
- energy
- intensity
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 title claims abstract description 197
- 239000000203 mixture Substances 0.000 title claims abstract description 150
- 238000000034 method Methods 0.000 title claims abstract description 127
- 239000004065 semiconductor Substances 0.000 claims abstract description 91
- 238000001514 detection method Methods 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 87
- 239000000126 substance Substances 0.000 claims description 43
- 239000013078 crystal Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 14
- 238000004458 analytical method Methods 0.000 claims description 13
- 229910052729 chemical element Inorganic materials 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 10
- 230000001419 dependent effect Effects 0.000 claims description 7
- 239000002178 crystalline material Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 12
- 238000009825 accumulation Methods 0.000 claims 1
- 238000000958 atom scattering Methods 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 125000004429 atom Chemical group 0.000 description 20
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 17
- 229910000673 Indium arsenide Inorganic materials 0.000 description 15
- 239000000523 sample Substances 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 11
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 10
- 230000010354 integration Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910021478 group 5 element Inorganic materials 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- DSSYDPGRYHVFLK-UHFFFAOYSA-N [S--].[S--].[Zn++].[Zn++] Chemical compound [S--].[S--].[Zn++].[Zn++] DSSYDPGRYHVFLK-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000013074 reference sample Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910017784 Sb In Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 101001094026 Synechocystis sp. (strain PCC 6803 / Kazusa) Phasin PhaP Proteins 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011176 pooling Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
- G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/50—Detectors
- G01N2223/501—Detectors array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Toxicology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9905953.7 | 1999-03-16 | ||
| GBGB9905953.7A GB9905953D0 (en) | 1999-03-16 | 1999-03-16 | Method and apparatus for the analysis of material composition |
| GB0000392A GB0000392D0 (en) | 2000-01-11 | 2000-01-11 | Method and apparatus for the analysis of material composition |
| GB0000392.1 | 2000-01-11 | ||
| PCT/GB2000/000951 WO2000055608A2 (en) | 1999-03-16 | 2000-03-15 | Method and apparatus for the analysis of material composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003532862A true JP2003532862A (ja) | 2003-11-05 |
| JP2003532862A5 JP2003532862A5 (enExample) | 2007-05-10 |
Family
ID=26243357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000605190A Withdrawn JP2003532862A (ja) | 1999-03-16 | 2000-03-15 | 材料組成を分析するための方法及び装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6907107B1 (enExample) |
| EP (1) | EP1163507A2 (enExample) |
| JP (1) | JP2003532862A (enExample) |
| KR (1) | KR20020011369A (enExample) |
| CN (1) | CN1187604C (enExample) |
| AU (1) | AU3180800A (enExample) |
| WO (1) | WO2000055608A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003050598A2 (en) * | 2001-12-12 | 2003-06-19 | The Regents Of The University Of California | Integrated crystal mounting and alignment system for high-throughput biological crystallography |
| JP3889388B2 (ja) * | 2003-10-06 | 2007-03-07 | 株式会社リガク | 膜構造解析方法およびその装置 |
| US7579616B2 (en) * | 2007-04-10 | 2009-08-25 | International Business Machines Corporation | Four-terminal programmable via-containing structure and method of fabricating same |
| US7561269B2 (en) * | 2007-12-14 | 2009-07-14 | Tokyo Electron Limited | Optical measurement system with systematic error correction |
| US8605858B2 (en) | 2011-06-27 | 2013-12-10 | Honeywell International Inc. | Methods and systems for inspecting structures for crystallographic imperfections |
| US9835570B2 (en) * | 2013-09-13 | 2017-12-05 | The United States Of America As Represented By The Administrator Of Nasa | X-ray diffraction (XRD) characterization methods for sigma=3 twin defects in cubic semiconductor (100) wafers |
| US9829448B2 (en) * | 2014-10-30 | 2017-11-28 | Bruker Jv Israel Ltd. | Measurement of small features using XRF |
| KR102426344B1 (ko) * | 2016-09-19 | 2022-07-27 | 소레크 뉴클리어 리서치 센터 | 샘플을 식별하는 ｘｒｆ 시스템과 방법 |
| CN110767562B (zh) * | 2019-09-23 | 2021-11-16 | 长江存储科技有限责任公司 | 薄膜物相含量的测量方法 |
| US11341629B2 (en) | 2020-07-02 | 2022-05-24 | Pratt & Whitney Canada Corp. | Systems and methods for generating an inspection image of an object from radiographic imaging |
| US20220198326A1 (en) * | 2020-12-17 | 2022-06-23 | Virtual Control Limited | Spectral data processing for chemical analysis |
| CN113984852B (zh) * | 2021-09-27 | 2023-07-07 | 泉州师范学院 | 一种基于第一性原理计算的异质结材料构建和表征方法 |
| CN118156358B (zh) * | 2024-05-11 | 2024-08-09 | 山东大学 | SiC半导体探测器、矿石成分分析设备及方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2637945C3 (de) | 1976-08-23 | 1979-02-08 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Roentgen-pulverdiffraktometer |
| DE3439471A1 (de) | 1984-10-27 | 1986-04-30 | MTU Motoren- und Turbinen-Union München GmbH, 8000 München | Verfahren und vorrichtung zum pruefen einkristalliner gegenstaende |
| US4575922A (en) | 1984-11-05 | 1986-03-18 | Burroughs Corporation | Method of fabricating integrated circuits incorporating steps to detect presence of gettering sites |
| EP0186924A3 (en) | 1984-12-31 | 1988-10-19 | Koninklijke Philips Electronics N.V. | Polycrystalline x-ray spectrometer |
| GB2169480B (en) | 1985-01-03 | 1988-12-07 | Erno Raumfahrttechnik Gmbh | A method of non-destructive testing of structural members |
| DD270770A1 (de) * | 1988-04-18 | 1989-08-09 | Freiberg Bergakademie | Roentgendiffraktometrisches untersuchungsverfahren zur ortsabhaengigen simultanen detektion von variationen des stoechometriezustandes und mikrodefekthaushaltes in einkristallinen verbindungsstrukturen |
| US5007072A (en) | 1988-08-03 | 1991-04-09 | Ion Track Instruments | X-ray diffraction inspection system |
| US4928294A (en) | 1989-03-24 | 1990-05-22 | U.S. Government As Represented By The Director, National Security Agency | Method and apparatus for line-modified asymmetric crystal topography |
| US5148458A (en) * | 1990-01-18 | 1992-09-15 | Clayton Ruud | Method and apparatus for simultaneous phase composition and residual stress measurement by x-ray diffraction |
| FR2692700A1 (fr) * | 1992-06-17 | 1993-12-24 | Philips Electronique Lab | Dispositif de traitement d'un signal mesure correspondant à l'intensité de rayons X réfléchie par une structure de couches multiples sur un substrat. |
| US5414747A (en) * | 1993-02-22 | 1995-05-09 | The Penn State Research Foundation | Method and apparatus for in-process analysis of polycrystalline films and coatings by x-ray diffraction |
| GB2289833B (en) | 1994-05-24 | 1998-04-22 | Mitsubishi Electric Corp | Method and apparatus for evaluating thin-film multilayer structure |
| DE19510168C2 (de) | 1995-03-21 | 2001-09-13 | Heimann Systems Gmbh & Co | Verfahren und Vorrichtung zur Bestimmung von kristallinen und polykristallinen Materialien in einem Untersuchungsbereich |
| GB9519687D0 (en) * | 1995-09-27 | 1995-11-29 | Schlumberger Ltd | Method of determining earth formation characteristics |
| US6577705B1 (en) * | 2001-04-02 | 2003-06-10 | William Chang | Combinatorial material analysis using X-ray capillary optics |
-
2000
- 2000-03-15 EP EP00909525A patent/EP1163507A2/en not_active Ceased
- 2000-03-15 KR KR1020017011758A patent/KR20020011369A/ko not_active Abandoned
- 2000-03-15 JP JP2000605190A patent/JP2003532862A/ja not_active Withdrawn
- 2000-03-15 WO PCT/GB2000/000951 patent/WO2000055608A2/en not_active Ceased
- 2000-03-15 AU AU31808/00A patent/AU3180800A/en not_active Abandoned
- 2000-03-15 CN CNB008076669A patent/CN1187604C/zh not_active Expired - Fee Related
- 2000-03-15 US US09/936,560 patent/US6907107B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1354832A (zh) | 2002-06-19 |
| CN1187604C (zh) | 2005-02-02 |
| EP1163507A2 (en) | 2001-12-19 |
| KR20020011369A (ko) | 2002-02-08 |
| US6907107B1 (en) | 2005-06-14 |
| WO2000055608A2 (en) | 2000-09-21 |
| WO2000055608A3 (en) | 2001-02-08 |
| AU3180800A (en) | 2000-10-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070313 |
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| A621 | Written request for application examination |
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| A131 | Notification of reasons for refusal |
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| A761 | Written withdrawal of application |
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