CN118715885A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN118715885A
CN118715885A CN202380022270.XA CN202380022270A CN118715885A CN 118715885 A CN118715885 A CN 118715885A CN 202380022270 A CN202380022270 A CN 202380022270A CN 118715885 A CN118715885 A CN 118715885A
Authority
CN
China
Prior art keywords
conductor
insulator
transistor
metal oxide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380022270.XA
Other languages
English (en)
Chinese (zh)
Inventor
国武宽司
井坂史人
大贯达也
山崎舜平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN118715885A publication Critical patent/CN118715885A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN202380022270.XA 2022-02-25 2023-02-13 半导体装置 Pending CN118715885A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-028041 2022-02-25
JP2022028041 2022-02-25
PCT/IB2023/051253 WO2023161757A1 (ja) 2022-02-25 2023-02-13 半導体装置

Publications (1)

Publication Number Publication Date
CN118715885A true CN118715885A (zh) 2024-09-27

Family

ID=87764926

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380022270.XA Pending CN118715885A (zh) 2022-02-25 2023-02-13 半导体装置

Country Status (5)

Country Link
US (1) US20250159900A1 (https=)
JP (1) JPWO2023161757A1 (https=)
KR (1) KR20240155889A (https=)
CN (1) CN118715885A (https=)
WO (1) WO2023161757A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102367921B1 (ko) * 2014-03-14 2022-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 시스템
WO2019021098A1 (en) * 2017-07-26 2019-01-31 Semiconductor Energy Laboratory Co., Ltd. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
CN114424339A (zh) 2019-09-20 2022-04-29 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
TWI865775B (zh) * 2020-05-15 2024-12-11 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置

Also Published As

Publication number Publication date
US20250159900A1 (en) 2025-05-15
KR20240155889A (ko) 2024-10-29
JPWO2023161757A1 (https=) 2023-08-31
WO2023161757A1 (ja) 2023-08-31

Similar Documents

Publication Publication Date Title
JP2025146893A (ja) 半導体装置の駆動方法
JP2026050393A (ja) 半導体装置
JP2025156443A (ja) 半導体装置の駆動方法
US20250008741A1 (en) Semiconductor device
CN118696612A (zh) 半导体装置以及半导体装置的制造方法
CN118575282A (zh) 半导体装置
TW202337000A (zh) 半導體裝置及半導體裝置的製造方法
CN118715885A (zh) 半导体装置
JP7730833B2 (ja) 半導体装置、および半導体装置の駆動方法
CN118633361A (zh) 存储装置
CN118679862A (zh) 半导体装置及半导体装置的制造方法
CN118235535A (zh) 存储元件及存储装置
CN119769190A (zh) 半导体装置
CN120435923A (zh) 半导体装置
CN118613922A (zh) 半导体装置
TW202343579A (zh) 半導體裝置
CN118749229A (zh) 半导体装置
CN118872401A (zh) 半导体装置
CN119452754A (zh) 叠层体的制造方法及半导体装置的制造方法
CN118891737A (zh) 半导体装置
WO2023144653A1 (ja) 記憶装置
CN121420639A (zh) 半导体装置及半导体装置的制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination