CN1187013A - Zinc oxide ceramic linear resistor and its producing method - Google Patents
Zinc oxide ceramic linear resistor and its producing method Download PDFInfo
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- CN1187013A CN1187013A CN96123503A CN96123503A CN1187013A CN 1187013 A CN1187013 A CN 1187013A CN 96123503 A CN96123503 A CN 96123503A CN 96123503 A CN96123503 A CN 96123503A CN 1187013 A CN1187013 A CN 1187013A
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- oxide
- zinc oxide
- molar
- aluminium
- linear resistor
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- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
The present invention uses ZnO, MgO and Al2O3 as main ingredients and adds one or two or all kinds of SiO2, titanium oxide and ytterbium oxide. Through mixing, vibrating milling, pelletizing, shaping, roasting under temp. 1000-1200 deg.C, the product is obtained with resistivity of 1 ohm.cm, energy with stand 680 J/cu.cm., resistance temp. coefficient + 1.5X10(-8) 1/deg.C , voltage non linear coefficient 1.26. It can be extensively used in the neutral grounding resistance of power transformer, and the discharging resistance of industance energy storing, voltage stabilizing, power source and air plasma cutting machine.
Description
The present invention relates to resistor and manufacture method.
Existing carbon ceramics linear resistance generally all is to make with traditional ceramic process, and the interpolation oxide during owing to manufacturing is refractory oxide, so sintering temperature is higher than 1300 ℃.The resistivity of existing carbon ceramics linear resistance is 236 ohmcms, and the tolerance surge energy is 196 joules/centimetre
3, temperature coefficient of resistance is 4.5 * 10
-2L/ ℃.
The objective of the invention is, not only will prepare the Zinc oxide ceramic linear resistor of function admirable, the sintering temperature in the time of also will reducing preparation.
The present invention is to be Main Ingredients and Appearance with zinc oxide (ZnO), magnesium oxide (MgO) and aluminium oxide (Al
2O
3) be fundamental component, add silica (SiO
2), titanium oxide (TiO
2) and yittrium oxide (Y
2O
3) at least a, two kinds or three kinds.
Preparation method of the present invention is: with 60～95% molar zinc oxide is Main Ingredients and Appearance, 1～15% molar magnesium oxide, 1～25% molar aluminium oxide is a fundamental component, add 1～15% molar titanium oxide, silica, at least a in the yittrium oxide, two kinds or three kinds of weighings are come out, put in the vibrating ball-mill wet-mixed into after 6～9 hours, with the powders mixture drying that obtains, polyvinyl alcohol (PVA) solution of 10% weight meter moisture 5% joined in the dry powders mixture carry out granulation, mixed material grain is made graininess, again die pressure be under 50～80 MPas (MPa) particle is molded into cylindrical, is roasting 3.5～4.5 hours in the atmospheric pressure under 1000～1200 ℃ of temperature with the base substrate of compression molding in temperature, intensification and cooling rate are 150 ℃/hour, form crystal grain in the sintered products that obtains, the density of sintered products is 71～95% of zinc oxide solid density.Product behind the sintering is polished two end surfaces with grinder, clean the back oven dry with clear water again, on the both ends of the surface of sintered products, be coated with silver ink firing or aluminium-plated again, be coated with the epoxy glaze, promptly make product Zinc oxide ceramic linear resistor of the present invention in its side.
With the Zinc oxide ceramic linear resistor of the inventive method preparation, after heating was handled in 30 minutes in 700 ℃ of atmospheric pressure, its resistivity was 1 ohmcm, and the tolerance energy is 680 joules/centimetre
3, temperature coefficient of resistance is+1.5 * 10
-3L/ ℃, voltage nonlinearity is 1.26.
Zinc oxide ceramic linear resistor with the inventive method preparation can be widely used in the power transformer neutral resistance, SF
6Breaker closing resistance, inductive energy storage, stabilized voltage power supply, air plasma are cut harmful machine discharge resistance etc., and fabulous application prospect is arranged.
Embodiment:
1. take by weighing 66～90% molar zinc oxide, 2～10% molar magnesium oxide, 4～15 molar aluminium oxide and 1～4% molar silica, put into the vibrating ball-mill wet-mixed 8 hours, granulation, moulding, sintering temperature are 1100 ℃～1300 ℃, roasting 4 hours in atmospheric pressure again, intensification and cooling rate are 150 ℃/hour, the density that obtains sintered products is 71～95% of zinc oxide solid density, with its both ends of the surface polishing, and be coated with silver ink firing or aluminium-plated, be coated with the epoxy glaze in its side.
2. take by weighing 61～85% molar zinc oxide, 2～10% molar magnesium oxide, 4～15% molar aluminium oxide, 1～4% molar silica and 1～5% molar titanium oxide, put into the vibrating ball-mill wet-mixed 8 hours, granulation, moulding, sintering temperature are 1000～1200 ℃, and roasting is 4 hours in atmospheric pressure, heat up and cooling rate is 150 ℃/hour, below same with embodiment 1.
Claims (3)
1. one kind with zinc oxide, magnesium oxide and aluminium oxide are the manufacture method of the Zinc oxide ceramic linear resistor of Main Ingredients and Appearance, it is characterized in that, with 60～95% molar zinc oxide, 1～15% molar magnesium oxide, 1～25% molar aluminium oxide, add 1～15% silica, titanium oxide, yittrium oxide, put in the vibrating ball-mill wet-mixed into 6～9 hours, with the powders mixture drying that obtains, again the poly-vinyl alcohol solution of 10% weight meter moisture 5% is joined in the dry powders mixture and carry out granulation, mixed material grain is made graininess, die pressure be under 50～80 MPas (MPa) particle is pressed into cylindrical, is roasting 3.5～4.5 hours in the atmospheric pressure under 1000～1200 ℃ of temperature with the base substrate of compression molding in temperature, intensification and cooling rate are 150 ℃/hour, obtain sintered products, with its both ends of the surface polishing, be coated with silver ink firing behind the cleaning, drying, be coated with the epoxy glaze in its side.
2. the method for claim 1 is characterized in that, the silica of described interpolation 1～15%, titanium oxide, yittrium oxide add a kind of at least.
3. the method for claim 1 is characterized in that, can also be aluminium-plated after the oven dry of sintered products both ends of the surface polished and cleaned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96123503A CN1046172C (en) | 1996-12-31 | 1996-12-31 | Zinc oxide ceramic linear resistor and its producing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96123503A CN1046172C (en) | 1996-12-31 | 1996-12-31 | Zinc oxide ceramic linear resistor and its producing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1187013A true CN1187013A (en) | 1998-07-08 |
| CN1046172C CN1046172C (en) | 1999-11-03 |
Family
ID=5127665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96123503A Expired - Fee Related CN1046172C (en) | 1996-12-31 | 1996-12-31 | Zinc oxide ceramic linear resistor and its producing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1046172C (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1323820C (en) * | 2004-06-18 | 2007-07-04 | 武汉理工大学 | Functional ceramic low voltage discharge compression forming method |
| CN1903784B (en) * | 2005-07-29 | 2010-04-14 | 中国科学院上海硅酸盐研究所 | Preparation method of light transmitant aluminium oxide ceramic |
| CN102300832A (en) * | 2009-02-03 | 2011-12-28 | 埃普科斯股份有限公司 | Varistor ceramic, multi-layer structural element comprising said varistor ceramic, production method for said varistor ceramic |
| CN103496966A (en) * | 2013-09-16 | 2014-01-08 | 电子科技大学 | Preparation method of low-resistivity zinc oxide ceramic material |
| CN104478430A (en) * | 2014-12-27 | 2015-04-01 | 陕西科技大学 | Zinc oxide linear resistance material and preparation method thereof |
| CN107134332A (en) * | 2017-04-29 | 2017-09-05 | 国网江苏省电力公司职业技能训练基地 | A kind of non-linear cylindrical piezoresistor and its application |
| CN111627627A (en) * | 2020-06-05 | 2020-09-04 | 西安交通大学 | High-resistance layer for carbon ceramic linear resistor and preparation method thereof |
| CN112489910A (en) * | 2020-12-15 | 2021-03-12 | 贵州振华电子信息产业技术研究有限公司 | Integrally-formed high-voltage pulse resistance resistor and preparation method thereof |
| CN114477994A (en) * | 2022-01-25 | 2022-05-13 | 广东爱晟电子科技有限公司 | High-power ceramic chip resistor and material and preparation thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1011839B (en) * | 1988-02-02 | 1991-02-27 | 西安交通大学 | Production method of zinc oxide resistor chip |
-
1996
- 1996-12-31 CN CN96123503A patent/CN1046172C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1323820C (en) * | 2004-06-18 | 2007-07-04 | 武汉理工大学 | Functional ceramic low voltage discharge compression forming method |
| CN1903784B (en) * | 2005-07-29 | 2010-04-14 | 中国科学院上海硅酸盐研究所 | Preparation method of light transmitant aluminium oxide ceramic |
| CN102300832A (en) * | 2009-02-03 | 2011-12-28 | 埃普科斯股份有限公司 | Varistor ceramic, multi-layer structural element comprising said varistor ceramic, production method for said varistor ceramic |
| CN103496966A (en) * | 2013-09-16 | 2014-01-08 | 电子科技大学 | Preparation method of low-resistivity zinc oxide ceramic material |
| CN104478430A (en) * | 2014-12-27 | 2015-04-01 | 陕西科技大学 | Zinc oxide linear resistance material and preparation method thereof |
| CN107134332A (en) * | 2017-04-29 | 2017-09-05 | 国网江苏省电力公司职业技能训练基地 | A kind of non-linear cylindrical piezoresistor and its application |
| CN111627627A (en) * | 2020-06-05 | 2020-09-04 | 西安交通大学 | High-resistance layer for carbon ceramic linear resistor and preparation method thereof |
| CN112489910A (en) * | 2020-12-15 | 2021-03-12 | 贵州振华电子信息产业技术研究有限公司 | Integrally-formed high-voltage pulse resistance resistor and preparation method thereof |
| CN114477994A (en) * | 2022-01-25 | 2022-05-13 | 广东爱晟电子科技有限公司 | High-power ceramic chip resistor and material and preparation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1046172C (en) | 1999-11-03 |
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