CN118648114A - 功能元件及其制造方法 - Google Patents
功能元件及其制造方法 Download PDFInfo
- Publication number
- CN118648114A CN118648114A CN202380019841.4A CN202380019841A CN118648114A CN 118648114 A CN118648114 A CN 118648114A CN 202380019841 A CN202380019841 A CN 202380019841A CN 118648114 A CN118648114 A CN 118648114A
- Authority
- CN
- China
- Prior art keywords
- electrode
- film
- photoelectric conversion
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-023771 | 2022-02-18 | ||
| JP2022023771 | 2022-02-18 | ||
| PCT/JP2023/001942 WO2023157571A1 (ja) | 2022-02-18 | 2023-01-23 | 機能素子およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118648114A true CN118648114A (zh) | 2024-09-13 |
Family
ID=87578279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380019841.4A Pending CN118648114A (zh) | 2022-02-18 | 2023-01-23 | 功能元件及其制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240389444A1 (https=) |
| EP (1) | EP4481826A4 (https=) |
| JP (1) | JPWO2023157571A1 (https=) |
| CN (1) | CN118648114A (https=) |
| WO (1) | WO2023157571A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2011027745A1 (ja) * | 2009-09-01 | 2013-02-04 | ローム株式会社 | 光電変換装置および光電変換装置の製造方法 |
| JP2014011392A (ja) * | 2012-07-02 | 2014-01-20 | Sony Corp | 固体撮像装置及びその製造方法、電子機器 |
| JP2015012239A (ja) * | 2013-07-01 | 2015-01-19 | ソニー株式会社 | 撮像素子および電子機器 |
| JP7040445B2 (ja) * | 2016-07-20 | 2022-03-23 | ソニーグループ株式会社 | 半導体膜及びその製造方法、並びに、光電変換素子、固体撮像素子及び電子装置 |
| JP7162275B2 (ja) | 2018-06-14 | 2022-10-28 | パナソニックＩｐマネジメント株式会社 | 制御電極と、透明電極と、前記制御電極と前記透明電極の側面とを電気的に接続する接続層と、を備えるイメージセンサ |
-
2023
- 2023-01-23 WO PCT/JP2023/001942 patent/WO2023157571A1/ja not_active Ceased
- 2023-01-23 CN CN202380019841.4A patent/CN118648114A/zh active Pending
- 2023-01-23 JP JP2024501046A patent/JPWO2023157571A1/ja active Pending
- 2023-01-23 EP EP23756099.0A patent/EP4481826A4/en active Pending
-
2024
- 2024-07-26 US US18/784,978 patent/US20240389444A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP4481826A4 (en) | 2025-06-18 |
| JPWO2023157571A1 (https=) | 2023-08-24 |
| US20240389444A1 (en) | 2024-11-21 |
| WO2023157571A1 (ja) | 2023-08-24 |
| EP4481826A1 (en) | 2024-12-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |