CN118591770A - Uv固化性量子点配制物 - Google Patents

Uv固化性量子点配制物 Download PDF

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Publication number
CN118591770A
CN118591770A CN202380017770.4A CN202380017770A CN118591770A CN 118591770 A CN118591770 A CN 118591770A CN 202380017770 A CN202380017770 A CN 202380017770A CN 118591770 A CN118591770 A CN 118591770A
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CN
China
Prior art keywords
poly
film
nanostructure
acrylate
shell
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Pending
Application number
CN202380017770.4A
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English (en)
Chinese (zh)
Inventor
C·伊本
D·巴雷拉
R·马
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Shoei Chemical Inc
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Shoei Chemical Inc
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Publication of CN118591770A publication Critical patent/CN118591770A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Electroluminescent Light Sources (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polymerisation Methods In General (AREA)
CN202380017770.4A 2022-01-19 2023-01-18 Uv固化性量子点配制物 Pending CN118591770A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263300948P 2022-01-19 2022-01-19
US63/300,948 2022-01-19
PCT/US2023/060795 WO2023141438A1 (en) 2022-01-19 2023-01-18 Uv-curable quantum dot formulations

Publications (1)

Publication Number Publication Date
CN118591770A true CN118591770A (zh) 2024-09-03

Family

ID=85227304

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380017770.4A Pending CN118591770A (zh) 2022-01-19 2023-01-18 Uv固化性量子点配制物

Country Status (5)

Country Link
US (1) US20230229087A1 (https=)
JP (1) JP2025505372A (https=)
KR (2) KR20260037168A (https=)
CN (1) CN118591770A (https=)
WO (1) WO2023141438A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11380863B2 (en) * 2019-03-19 2022-07-05 Nanosys, Inc. Flexible electroluminescent devices
WO2025127145A1 (ja) * 2023-12-15 2025-06-19 Ｔｏｐｐａｎホールディングス株式会社 光合成促進シート
KR20260048001A (ko) 2024-10-02 2026-04-09 에이치엘만도 주식회사 완충 장치

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
AU2003268487A1 (en) 2002-09-05 2004-03-29 Nanosys, Inc. Nanocomposites
US6949206B2 (en) 2002-09-05 2005-09-27 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
JP4789809B2 (ja) 2004-01-15 2011-10-12 サムスン エレクトロニクス カンパニー リミテッド ナノ結晶をドーピングしたマトリックス
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
CN102064102B (zh) 2004-06-08 2013-10-30 桑迪士克公司 形成单层纳米结构的方法和器件以及包含这种单层的器件
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
US20100155749A1 (en) 2007-03-19 2010-06-24 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
WO2008115498A1 (en) 2007-03-19 2008-09-25 Nanosys, Inc. Methods for encapsulating nanocrystals
US20100110728A1 (en) 2007-03-19 2010-05-06 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
WO2010126606A2 (en) 2009-05-01 2010-11-04 Nanosys, Inc. Functionalized matrixes for dispersion of nanostructures
EP2638321B1 (en) 2010-11-10 2019-05-08 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (zh) 2012-07-02 2017-08-21 奈米系統股份有限公司 高度發光奈米結構及其製造方法
JP6250785B2 (ja) 2013-03-14 2017-12-20 ナノシス・インク． 無溶媒量子ドット交換方法
CN106714000A (zh) 2015-07-14 2017-05-24 三亚中兴软件有限责任公司 会议终端权限的控制方法、系统及装置
KR102474201B1 (ko) 2015-11-26 2022-12-06 삼성디스플레이 주식회사 양자점 컬러 필터 및 이를 구비하는 표시 장치
CA3021763A1 (en) 2016-04-26 2017-11-02 Nanosys, Inc. Stable inp quantum dots with thick shell coating and method of producing the same
EP3668916A1 (en) 2017-08-16 2020-06-24 Nanosys, Inc. Peg-based ligands with enhanced dispersibility and improved performance
KR102524536B1 (ko) * 2018-01-23 2023-04-24 삼성디스플레이 주식회사 감광성 수지 조성물, 이로부터 제조된 필름, 상기 필름을 포함한 색변환 부재, 및 상기 색변환 부재를 포함하는 전자장치
EP3844240B1 (en) 2018-05-30 2024-02-14 Shoei Chemical Inc. Method for synthesis of blue-emitting znse1-xtex alloy nanocrystals
TWI824082B (zh) * 2018-12-13 2023-12-01 南韓商東友精細化工有限公司 量子點、量子點分散體、量子點光轉換組合物、自發光感光性樹脂組合物、量子點發光二極體、量子點膜、濾色器、光轉換層疊基材及影像顯示裝置
JP7520287B2 (ja) 2019-03-20 2024-07-23 昭栄化学工業株式会社 エレクトロルミネッセンスデバイスのための無機配位子を有するナノ構造
US10927294B2 (en) 2019-06-20 2021-02-23 Nanosys, Inc. Bright silver based quaternary nanostructures
US11312905B2 (en) 2019-07-11 2022-04-26 Nanosys, Inc. Blue-emitting nanocrystals with cubic shape and fluoride passivation
CN114341312A (zh) 2019-07-11 2022-04-12 纳米系统公司 包含结合到表面的卤化锌和羧酸锌的核-壳纳米结构
KR102871616B1 (ko) 2019-08-12 2025-10-15 소에이 가가쿠 고교 가부시키가이샤 반치전폭이 낮은 청색 방출 ZnSe1-xTex 합금 나노결정의 합성
KR102881894B1 (ko) 2019-09-11 2025-11-05 소에이 가가쿠 고교 가부시키가이샤 잉크젯 프린팅용 나노구조체 잉크 조성물들
KR102770880B1 (ko) * 2020-02-12 2025-02-24 동우 화인켐 주식회사 양자점, 상기 양자점을 포함하는 양자점 분산액, 광변환 경화성 조성물, 양자점 발광다이오드, 양자점 필름, 상기 조성물을 이용하여 형성되는 경화막 및 상기 경화막을 포함하는 화상표시장치
WO2021178491A1 (en) 2020-03-03 2021-09-10 Nanosys, Inc. Blue-emitting nanocrystals with cubic shape and group iv metal fluoride passivation

Also Published As

Publication number Publication date
KR102932644B1 (ko) 2026-02-27
JP2025505372A (ja) 2025-02-26
WO2023141438A1 (en) 2023-07-27
KR20260037168A (ko) 2026-03-17
KR20240134191A (ko) 2024-09-06
US20230229087A1 (en) 2023-07-20

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