CN118382595A - 半导体纳米粒子的制造方法和半导体纳米粒子 - Google Patents

半导体纳米粒子的制造方法和半导体纳米粒子 Download PDF

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Publication number
CN118382595A
CN118382595A CN202280081929.4A CN202280081929A CN118382595A CN 118382595 A CN118382595 A CN 118382595A CN 202280081929 A CN202280081929 A CN 202280081929A CN 118382595 A CN118382595 A CN 118382595A
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Prior art keywords
precursor solution
semiconductor nanoparticle
semiconductor
ligand
solution
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CN202280081929.4A
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English (en)
Chinese (zh)
Inventor
高桥美枝
福田一人
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Publication of CN118382595A publication Critical patent/CN118382595A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/04—Binary compounds including binary selenium-tellurium compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
    • C30B7/04—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using aqueous solvents

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Luminescent Compositions (AREA)
CN202280081929.4A 2021-12-23 2022-11-16 半导体纳米粒子的制造方法和半导体纳米粒子 Pending CN118382595A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021209464 2021-12-23
JP2021-209464 2021-12-23
PCT/JP2022/042486 WO2023119960A1 (ja) 2021-12-23 2022-11-16 半導体ナノ粒子の製造方法及び半導体ナノ粒子

Publications (1)

Publication Number Publication Date
CN118382595A true CN118382595A (zh) 2024-07-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280081929.4A Pending CN118382595A (zh) 2021-12-23 2022-11-16 半导体纳米粒子的制造方法和半导体纳米粒子

Country Status (4)

Country Link
US (1) US20240376637A1 (https=)
JP (1) JPWO2023119960A1 (https=)
CN (1) CN118382595A (https=)
WO (1) WO2023119960A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060145138A1 (en) * 2005-01-06 2006-07-06 Hitachi Software Engineering Co., Ltd. Semiconductor nanoparticle surface modification method
CN102604639A (zh) * 2012-02-22 2012-07-25 浙江师范大学 一种CdSe/ZnTe核壳型量子点及其制备方法
CN104610971A (zh) * 2014-05-06 2015-05-13 上海大学 具有高荧光产率的ZnTe量子点的水相制备方法
CN110945105A (zh) * 2017-07-27 2020-03-31 Ns材料株式会社 量子点以及使用量子点的波长转换构件、照明构件、背光装置、显示装置以及量子点的制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004075464A (ja) * 2002-08-20 2004-03-11 Mitsubishi Chemicals Corp 半導体超微粒子及びその製造方法
JP4445716B2 (ja) * 2003-05-30 2010-04-07 日立ソフトウエアエンジニアリング株式会社 ナノ粒子製造方法
JP2007224233A (ja) * 2006-02-27 2007-09-06 Idemitsu Kosan Co Ltd 半導体ナノ粒子の製造方法及びその製造装置
US20100289003A1 (en) * 2007-10-29 2010-11-18 Kahen Keith B Making colloidal ternary nanocrystals
WO2010126606A2 (en) * 2009-05-01 2010-11-04 Nanosys, Inc. Functionalized matrixes for dispersion of nanostructures
EP3425021B1 (en) * 2016-02-29 2020-07-08 FUJIFILM Corporation Semiconductor nanoparticles, dispersion liquid, and film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060145138A1 (en) * 2005-01-06 2006-07-06 Hitachi Software Engineering Co., Ltd. Semiconductor nanoparticle surface modification method
CN102604639A (zh) * 2012-02-22 2012-07-25 浙江师范大学 一种CdSe/ZnTe核壳型量子点及其制备方法
CN104610971A (zh) * 2014-05-06 2015-05-13 上海大学 具有高荧光产率的ZnTe量子点的水相制备方法
CN110945105A (zh) * 2017-07-27 2020-03-31 Ns材料株式会社 量子点以及使用量子点的波长转换构件、照明构件、背光装置、显示装置以及量子点的制造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
凌文亮: "ZnTe/ZnSe量子点的制备与表征", 《中国优秀硕士学位论文全文数据库 基础科学篇》, 15 February 2013 (2013-02-15), pages 005 - 89 *
赵丹等: "L-半胱氨酸修饰的水溶性掺杂型CdZnTe量子点的水热法制备和表征", 《中南民族大学学报（自然科学版）》, vol. 32, no. 3, 30 September 2013 (2013-09-30), pages 50 - 53 *

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US20240376637A1 (en) 2024-11-14
WO2023119960A1 (ja) 2023-06-29

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