CN118382595A - 半导体纳米粒子的制造方法和半导体纳米粒子 - Google Patents

半导体纳米粒子的制造方法和半导体纳米粒子 Download PDF

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Publication number
CN118382595A
CN118382595A CN202280081929.4A CN202280081929A CN118382595A CN 118382595 A CN118382595 A CN 118382595A CN 202280081929 A CN202280081929 A CN 202280081929A CN 118382595 A CN118382595 A CN 118382595A
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CN
China
Prior art keywords
precursor solution
semiconductor nanoparticle
semiconductor
ligand
solution
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Pending
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CN202280081929.4A
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English (en)
Chinese (zh)
Inventor
高桥美枝
福田一人
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN118382595A publication Critical patent/CN118382595A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/04—Binary compounds including binary selenium-tellurium compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
    • C30B7/04—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using aqueous solvents

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Luminescent Compositions (AREA)
CN202280081929.4A 2021-12-23 2022-11-16 半导体纳米粒子的制造方法和半导体纳米粒子 Pending CN118382595A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-209464 2021-12-23
JP2021209464 2021-12-23
PCT/JP2022/042486 WO2023119960A1 (ja) 2021-12-23 2022-11-16 半導体ナノ粒子の製造方法及び半導体ナノ粒子

Publications (1)

Publication Number Publication Date
CN118382595A true CN118382595A (zh) 2024-07-23

Family

ID=86902127

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280081929.4A Pending CN118382595A (zh) 2021-12-23 2022-11-16 半导体纳米粒子的制造方法和半导体纳米粒子

Country Status (4)

Country Link
US (1) US20240376637A1 (https=)
JP (1) JPWO2023119960A1 (https=)
CN (1) CN118382595A (https=)
WO (1) WO2023119960A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004075464A (ja) * 2002-08-20 2004-03-11 Mitsubishi Chemicals Corp 半導体超微粒子及びその製造方法
JP4445716B2 (ja) * 2003-05-30 2010-04-07 日立ソフトウエアエンジニアリング株式会社 ナノ粒子製造方法
JP2007224233A (ja) * 2006-02-27 2007-09-06 Idemitsu Kosan Co Ltd 半導体ナノ粒子の製造方法及びその製造装置
US20100289003A1 (en) * 2007-10-29 2010-11-18 Kahen Keith B Making colloidal ternary nanocrystals
CN104387772B (zh) * 2009-05-01 2017-07-11 纳米系统公司 用于纳米结构体分散的官能化基质
WO2017150297A1 (ja) * 2016-02-29 2017-09-08 富士フイルム株式会社 半導体ナノ粒子、分散液およびフィルム
EP3660127A4 (en) * 2017-07-27 2021-03-31 NS Materials Inc. QUANTUM POINT, WAVELENGTH CONVERSION ELEMENT WITH QUANTUM POINT, LIGHTING ELEMENT, BACKLIGHTING DEVICE, DISPLAY DEVICE AND METHOD FOR MANUFACTURING QUANTUM POINTS

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Publication number Publication date
JPWO2023119960A1 (https=) 2023-06-29
US20240376637A1 (en) 2024-11-14
WO2023119960A1 (ja) 2023-06-29

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