JPWO2023119960A1 - - Google Patents

Info

Publication number
JPWO2023119960A1
JPWO2023119960A1 JP2023569165A JP2023569165A JPWO2023119960A1 JP WO2023119960 A1 JPWO2023119960 A1 JP WO2023119960A1 JP 2023569165 A JP2023569165 A JP 2023569165A JP 2023569165 A JP2023569165 A JP 2023569165A JP WO2023119960 A1 JPWO2023119960 A1 JP WO2023119960A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023569165A
Other languages
Japanese (ja)
Other versions
JPWO2023119960A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023119960A1 publication Critical patent/JPWO2023119960A1/ja
Publication of JPWO2023119960A5 publication Critical patent/JPWO2023119960A5/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/04Binary compounds including binary selenium-tellurium compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/02Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
    • C30B7/04Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using aqueous solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Luminescent Compositions (AREA)
JP2023569165A 2021-12-23 2022-11-16 Pending JPWO2023119960A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021209464 2021-12-23
PCT/JP2022/042486 WO2023119960A1 (ja) 2021-12-23 2022-11-16 半導体ナノ粒子の製造方法及び半導体ナノ粒子

Publications (2)

Publication Number Publication Date
JPWO2023119960A1 true JPWO2023119960A1 (https=) 2023-06-29
JPWO2023119960A5 JPWO2023119960A5 (https=) 2025-10-08

Family

ID=86902127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023569165A Pending JPWO2023119960A1 (https=) 2021-12-23 2022-11-16

Country Status (4)

Country Link
US (1) US20240376637A1 (https=)
JP (1) JPWO2023119960A1 (https=)
CN (1) CN118382595A (https=)
WO (1) WO2023119960A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004075464A (ja) * 2002-08-20 2004-03-11 Mitsubishi Chemicals Corp 半導体超微粒子及びその製造方法
JP4445716B2 (ja) * 2003-05-30 2010-04-07 日立ソフトウエアエンジニアリング株式会社 ナノ粒子製造方法
JP2007224233A (ja) * 2006-02-27 2007-09-06 Idemitsu Kosan Co Ltd 半導体ナノ粒子の製造方法及びその製造装置
US20100289003A1 (en) * 2007-10-29 2010-11-18 Kahen Keith B Making colloidal ternary nanocrystals
CN104387772B (zh) * 2009-05-01 2017-07-11 纳米系统公司 用于纳米结构体分散的官能化基质
WO2017150297A1 (ja) * 2016-02-29 2017-09-08 富士フイルム株式会社 半導体ナノ粒子、分散液およびフィルム
EP3660127A4 (en) * 2017-07-27 2021-03-31 NS Materials Inc. QUANTUM POINT, WAVELENGTH CONVERSION ELEMENT WITH QUANTUM POINT, LIGHTING ELEMENT, BACKLIGHTING DEVICE, DISPLAY DEVICE AND METHOD FOR MANUFACTURING QUANTUM POINTS

Also Published As

Publication number Publication date
CN118382595A (zh) 2024-07-23
US20240376637A1 (en) 2024-11-14
WO2023119960A1 (ja) 2023-06-29

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Legal Events

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Effective date: 20250930

A621 Written request for application examination

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Effective date: 20250930