JPWO2023119960A1 - - Google Patents
Info
- Publication number
- JPWO2023119960A1 JPWO2023119960A1 JP2023569165A JP2023569165A JPWO2023119960A1 JP WO2023119960 A1 JPWO2023119960 A1 JP WO2023119960A1 JP 2023569165 A JP2023569165 A JP 2023569165A JP 2023569165 A JP2023569165 A JP 2023569165A JP WO2023119960 A1 JPWO2023119960 A1 JP WO2023119960A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/04—Binary compounds including binary selenium-tellurium compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
- C30B7/04—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using aqueous solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021209464 | 2021-12-23 | ||
| PCT/JP2022/042486 WO2023119960A1 (ja) | 2021-12-23 | 2022-11-16 | 半導体ナノ粒子の製造方法及び半導体ナノ粒子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023119960A1 true JPWO2023119960A1 (https=) | 2023-06-29 |
| JPWO2023119960A5 JPWO2023119960A5 (https=) | 2025-10-08 |
Family
ID=86902127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023569165A Pending JPWO2023119960A1 (https=) | 2021-12-23 | 2022-11-16 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240376637A1 (https=) |
| JP (1) | JPWO2023119960A1 (https=) |
| CN (1) | CN118382595A (https=) |
| WO (1) | WO2023119960A1 (https=) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004075464A (ja) * | 2002-08-20 | 2004-03-11 | Mitsubishi Chemicals Corp | 半導体超微粒子及びその製造方法 |
| JP4445716B2 (ja) * | 2003-05-30 | 2010-04-07 | 日立ソフトウエアエンジニアリング株式会社 | ナノ粒子製造方法 |
| EP1679359B1 (en) * | 2005-01-06 | 2010-05-26 | Hitachi Software Engineering Co., Ltd. | Semiconductor nanoparticle surface modification method |
| JP2007224233A (ja) * | 2006-02-27 | 2007-09-06 | Idemitsu Kosan Co Ltd | 半導体ナノ粒子の製造方法及びその製造装置 |
| US20100289003A1 (en) * | 2007-10-29 | 2010-11-18 | Kahen Keith B | Making colloidal ternary nanocrystals |
| WO2010126606A2 (en) * | 2009-05-01 | 2010-11-04 | Nanosys, Inc. | Functionalized matrixes for dispersion of nanostructures |
| CN102604639B (zh) * | 2012-02-22 | 2014-04-02 | 浙江师范大学 | 一种CdSe/ZnTe核壳型量子点及其制备方法 |
| CN104610971B (zh) * | 2014-05-06 | 2018-03-06 | 上海大学 | 具有高荧光产率的ZnTe量子点的水相制备方法 |
| EP3425021B1 (en) * | 2016-02-29 | 2020-07-08 | FUJIFILM Corporation | Semiconductor nanoparticles, dispersion liquid, and film |
| KR20260033623A (ko) * | 2017-07-27 | 2026-03-10 | 도판 홀딩스 가부시키가이샤 | 양자점 및, 양자점을 이용한 파장 변환 부재, 조명 부재, 백라이트 장치, 표시 장치, 및, 양자점의 제조 방법 |
-
2022
- 2022-11-16 JP JP2023569165A patent/JPWO2023119960A1/ja active Pending
- 2022-11-16 CN CN202280081929.4A patent/CN118382595A/zh active Pending
- 2022-11-16 WO PCT/JP2022/042486 patent/WO2023119960A1/ja not_active Ceased
-
2024
- 2024-06-13 US US18/741,854 patent/US20240376637A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN118382595A (zh) | 2024-07-23 |
| US20240376637A1 (en) | 2024-11-14 |
| WO2023119960A1 (ja) | 2023-06-29 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250930 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250930 |