CN118244574A - 曝光装置及物品的制造方法 - Google Patents

曝光装置及物品的制造方法 Download PDF

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Publication number
CN118244574A
CN118244574A CN202410527133.8A CN202410527133A CN118244574A CN 118244574 A CN118244574 A CN 118244574A CN 202410527133 A CN202410527133 A CN 202410527133A CN 118244574 A CN118244574 A CN 118244574A
Authority
CN
China
Prior art keywords
pattern
optical system
projection optical
light
measurement pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410527133.8A
Other languages
English (en)
Chinese (zh)
Inventor
桥本明人
赤松昭郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN118244574A publication Critical patent/CN118244574A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202410527133.8A 2019-05-22 2020-05-18 曝光装置及物品的制造方法 Pending CN118244574A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-096252 2019-05-22
JP2019096252A JP7320986B2 (ja) 2019-05-22 2019-05-22 露光装置及び物品の製造方法
CN202010417810.2A CN111983897B (zh) 2019-05-22 2020-05-18 曝光装置及物品的制造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN202010417810.2A Division CN111983897B (zh) 2019-05-22 2020-05-18 曝光装置及物品的制造方法

Publications (1)

Publication Number Publication Date
CN118244574A true CN118244574A (zh) 2024-06-25

Family

ID=73441623

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202410527133.8A Pending CN118244574A (zh) 2019-05-22 2020-05-18 曝光装置及物品的制造方法
CN202010417810.2A Active CN111983897B (zh) 2019-05-22 2020-05-18 曝光装置及物品的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202010417810.2A Active CN111983897B (zh) 2019-05-22 2020-05-18 曝光装置及物品的制造方法

Country Status (5)

Country Link
US (1) US11181825B2 (https=)
JP (1) JP7320986B2 (https=)
KR (1) KR102739326B1 (https=)
CN (2) CN118244574A (https=)
TW (3) TWI879485B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023136106A (ja) * 2022-03-16 2023-09-29 キヤノン株式会社 計測装置、露光装置、及び物品の製造方法
US12461041B2 (en) * 2022-04-20 2025-11-04 Kla Corporation Measurement of thick films and high aspect ratio structures

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3013463B2 (ja) 1991-02-01 2000-02-28 株式会社ニコン 焦点位置検出装置及び投影露光装置
JP2938187B2 (ja) * 1991-09-20 1999-08-23 株式会社日立製作所 パターン形成方法及び同方法を実施するための装置
TW490596B (en) 1999-03-08 2002-06-11 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the lithographic projection apparatus, device manufactured according to the method and method of calibrating the lithographic projection apparatus
JP4323608B2 (ja) * 1999-03-12 2009-09-02 キヤノン株式会社 露光装置およびデバイス製造方法
US7016025B1 (en) * 1999-06-24 2006-03-21 Asml Holding N.V. Method and apparatus for characterization of optical systems
US6885429B2 (en) * 2002-06-28 2005-04-26 Asml Holding N.V. System and method for automated focus measuring of a lithography tool
JP2008140911A (ja) 2006-11-30 2008-06-19 Toshiba Corp フォーカスモニタ方法
CN101226299B (zh) * 2007-01-18 2011-07-13 瀚宇彩晶股份有限公司 制作具有光散射效果的彩色滤光层的方法
TWI383273B (zh) * 2007-11-20 2013-01-21 Asml Netherlands Bv 微影投射裝置之焦點測量方法及微影投射裝置之校準方法
JP5209946B2 (ja) * 2007-12-12 2013-06-12 株式会社オーク製作所 焦点位置検出方法および描画装置
CN102034732B (zh) * 2009-09-30 2015-01-21 京瓷株式会社 吸附用构件、使用其的吸附装置及带电粒子线装置
JP2013186425A (ja) 2012-03-09 2013-09-19 Nikon Corp 焦点位置検出方法、露光方法、デバイス製造方法及び露光装置
JP6003272B2 (ja) 2012-06-15 2016-10-05 富士通セミコンダクター株式会社 露光方法および露光装置
KR102413894B1 (ko) * 2014-12-05 2022-06-28 가부시키가이샤 오크세이사쿠쇼 노광 장치
JP6818501B2 (ja) * 2016-10-19 2021-01-20 キヤノン株式会社 リソグラフィ装置、および物品製造方法

Also Published As

Publication number Publication date
US11181825B2 (en) 2021-11-23
JP7320986B2 (ja) 2023-08-04
JP2020190654A (ja) 2020-11-26
TWI836797B (zh) 2024-03-21
CN111983897A (zh) 2020-11-24
KR102739326B1 (ko) 2024-12-09
CN111983897B (zh) 2024-04-23
TWI879485B (zh) 2025-04-01
TW202314402A (zh) 2023-04-01
TWI790433B (zh) 2023-01-21
KR20200135174A (ko) 2020-12-02
US20200371443A1 (en) 2020-11-26
TW202424663A (zh) 2024-06-16
TW202043939A (zh) 2020-12-01

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