KR102739326B1 - 노광 장치 및 물품의 제조 방법 - Google Patents

노광 장치 및 물품의 제조 방법 Download PDF

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Publication number
KR102739326B1
KR102739326B1 KR1020200053646A KR20200053646A KR102739326B1 KR 102739326 B1 KR102739326 B1 KR 102739326B1 KR 1020200053646 A KR1020200053646 A KR 1020200053646A KR 20200053646 A KR20200053646 A KR 20200053646A KR 102739326 B1 KR102739326 B1 KR 102739326B1
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South Korea
Prior art keywords
pattern
optical system
projection optical
light
exposure device
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Korean (ko)
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KR20200135174A (ko
Inventor
아키히토 하시모토
아키오 아카마츠
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020200053646A 2019-05-22 2020-05-06 노광 장치 및 물품의 제조 방법 Active KR102739326B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2019-096252 2019-05-22
JP2019096252A JP7320986B2 (ja) 2019-05-22 2019-05-22 露光装置及び物品の製造方法

Publications (2)

Publication Number Publication Date
KR20200135174A KR20200135174A (ko) 2020-12-02
KR102739326B1 true KR102739326B1 (ko) 2024-12-09

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KR1020200053646A Active KR102739326B1 (ko) 2019-05-22 2020-05-06 노광 장치 및 물품의 제조 방법

Country Status (5)

Country Link
US (1) US11181825B2 (https=)
JP (1) JP7320986B2 (https=)
KR (1) KR102739326B1 (https=)
CN (2) CN111983897B (https=)
TW (3) TWI836797B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023136106A (ja) * 2022-03-16 2023-09-29 キヤノン株式会社 計測装置、露光装置、及び物品の製造方法
US12461041B2 (en) * 2022-04-20 2025-11-04 Kla Corporation Measurement of thick films and high aspect ratio structures

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001035785A (ja) * 1999-06-24 2001-02-09 Svg Lithography Syst Inc 光学系の特性を測定する方法及び装置
JP2008199034A (ja) * 1999-03-08 2008-08-28 Asml Netherlands Bv リソグラフィ投影装置のオフアクシスレベリング
JP2013186425A (ja) * 2012-03-09 2013-09-19 Nikon Corp 焦点位置検出方法、露光方法、デバイス製造方法及び露光装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3013463B2 (ja) 1991-02-01 2000-02-28 株式会社ニコン 焦点位置検出装置及び投影露光装置
US5331369A (en) * 1991-09-20 1994-07-19 Hitachi, Ltd. Method of forming patterns and apparatus for carrying out the same
JP4323608B2 (ja) * 1999-03-12 2009-09-02 キヤノン株式会社 露光装置およびデバイス製造方法
US6885429B2 (en) * 2002-06-28 2005-04-26 Asml Holding N.V. System and method for automated focus measuring of a lithography tool
JP2008140911A (ja) 2006-11-30 2008-06-19 Toshiba Corp フォーカスモニタ方法
CN101226299B (zh) * 2007-01-18 2011-07-13 瀚宇彩晶股份有限公司 制作具有光散射效果的彩色滤光层的方法
TWI383273B (zh) * 2007-11-20 2013-01-21 Asml Netherlands Bv 微影投射裝置之焦點測量方法及微影投射裝置之校準方法
JP5209946B2 (ja) * 2007-12-12 2013-06-12 株式会社オーク製作所 焦点位置検出方法および描画装置
CN102034732B (zh) * 2009-09-30 2015-01-21 京瓷株式会社 吸附用构件、使用其的吸附装置及带电粒子线装置
JP6003272B2 (ja) 2012-06-15 2016-10-05 富士通セミコンダクター株式会社 露光方法および露光装置
KR102413894B1 (ko) * 2014-12-05 2022-06-28 가부시키가이샤 오크세이사쿠쇼 노광 장치
JP6818501B2 (ja) * 2016-10-19 2021-01-20 キヤノン株式会社 リソグラフィ装置、および物品製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008199034A (ja) * 1999-03-08 2008-08-28 Asml Netherlands Bv リソグラフィ投影装置のオフアクシスレベリング
JP2001035785A (ja) * 1999-06-24 2001-02-09 Svg Lithography Syst Inc 光学系の特性を測定する方法及び装置
JP2013186425A (ja) * 2012-03-09 2013-09-19 Nikon Corp 焦点位置検出方法、露光方法、デバイス製造方法及び露光装置

Also Published As

Publication number Publication date
KR20200135174A (ko) 2020-12-02
TW202314402A (zh) 2023-04-01
TWI790433B (zh) 2023-01-21
TWI879485B (zh) 2025-04-01
TWI836797B (zh) 2024-03-21
JP7320986B2 (ja) 2023-08-04
CN111983897A (zh) 2020-11-24
US11181825B2 (en) 2021-11-23
US20200371443A1 (en) 2020-11-26
JP2020190654A (ja) 2020-11-26
CN118244574A (zh) 2024-06-25
CN111983897B (zh) 2024-04-23
TW202424663A (zh) 2024-06-16
TW202043939A (zh) 2020-12-01

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