CN118190034A - Film sensor based on three-dimensional strain, preparation method thereof and parameter detection method - Google Patents
Film sensor based on three-dimensional strain, preparation method thereof and parameter detection method Download PDFInfo
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- G01D21/00—Measuring or testing not otherwise provided for
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Abstract
The invention discloses a thin film sensor, a preparation method thereof and a parameter detection method, wherein the thin film sensor comprises the following components: at least one three-way strain sensitive unit; each three-way strain sensitive unit comprises three strain grids which are connected in series to form an equilateral triangle; and detecting to obtain the pressure drop of each strain grating, and determining the strain quantity and/or the temperature of the member to be tested based on the pressure drop of each strain grating. According to the invention, three strain grids are connected in series to form an equilateral triangle by adopting the three-way strain sensitive unit, so that the pressure drop of each strain grid can be detected by fewer wires, the strain and temperature change of a member to be detected can be obtained, the occupied area of the thin film sensor is effectively reduced, the miniaturization, multifunction and integration of the thin film sensor are realized, and the problem of insufficient internal space of an engine in the prior art is solved.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a three-way strain-based thin film sensor, a preparation method thereof and a parameter detection method.
Background
The core component of the aerospace craft is a turbine engine, the turbine engine mainly comprises blades, the engine blades work in a space environment and are required to work for a long time in a severe environment with high temperature, high pressure, strong radiation and strong vibration, fatigue cracks and even fracture are easy to occur, and the situation has fatal threat to the engine, so that in order to ensure the normal work of the engine, the parameters such as the temperature, the strain and the like of high-temperature components such as the engine blades are required to be monitored in real time.
In the prior art, the strain is usually monitored in real time through a film strain sensor, the temperature is monitored in real time through a film temperature sensor, but in the aerospace field, the internal space of a turbine engine is limited, the strain and the temperature are monitored by adopting the film strain sensor and the film temperature sensor respectively, the occupied space is large, and the performance of the engine is influenced.
Disclosure of Invention
The embodiment of the invention provides a thin film sensor, a preparation method thereof and a parameter detection method, which are used for solving the problems of large occupied space and the like of the thin film sensor in the prior art.
In a first aspect, an embodiment of the present invention provides a thin film sensor, including:
at least one three-way strain sensitive unit;
Each three-way strain sensitive unit comprises three strain grids which are connected in series to form an equilateral triangle;
And detecting to obtain the pressure drop of each strain grating, and determining the strain quantity and/or the temperature of the member to be tested based on the pressure drop of each strain grating.
In a second aspect, an embodiment of the present invention provides a parameter detection method, including:
Acquiring the pressure drop of each strain grid of the thin film sensor; the thin film sensor comprises at least one three-way strain sensitive unit, wherein each three-way strain sensitive unit comprises three strain grids which are connected in series to form an equilateral triangle;
and determining the strain quantity and/or the temperature of the member to be tested based on the pressure drop of each strain grating.
In a third aspect, an embodiment of the present invention provides a method for manufacturing a thin film sensor, including:
cleaning the original substrate to obtain a cleaned substrate;
Depositing an insulating layer on the cleaned substrate to obtain a first substrate;
After the first substrate is subjected to strain gate patterning, a strain sensitive layer is deposited, and a second substrate is obtained, wherein the strain sensitive layer comprises at least one three-way strain sensitive unit, each three-way strain sensitive unit comprises three strain gates, and the three strain gates are connected in series to form an equilateral triangle;
and forming a protective layer on the second substrate to obtain the thin film sensor.
According to the thin film sensor, the preparation method and the parameter detection method thereof provided by the embodiment of the invention, the three strain grids are connected in series to form the equilateral triangle by adopting the three-way strain sensitive unit, so that the pressure drop of each strain grid can be detected by less wires, the strain and the temperature change of a member to be detected can be obtained, the occupied area of the thin film sensor is effectively reduced, the miniaturization, the multifunction and the integration of the thin film sensor are realized, and the problem of insufficient internal space of an engine in the prior art is solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a thin film sensor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an exemplary structure of a thin film sensor according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of another exemplary structure of a thin film sensor according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of another exemplary structure of a thin film sensor according to an embodiment of the present invention;
FIG. 5 is a schematic view of another exemplary structure of a thin film sensor according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of another exemplary structure of a thin film sensor according to an embodiment of the present invention;
FIG. 7 is a schematic view of another exemplary structure of a thin film sensor according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of another exemplary structure of a thin film sensor according to an embodiment of the present invention;
FIG. 9 is a flowchart of a parameter detection method according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of the component principle of strain amount according to an embodiment of the present invention;
FIG. 11 is a schematic view illustrating the direction of applied strain and the angle of each strain gate according to an embodiment of the present invention;
FIG. 12 is a schematic flow chart of a method for manufacturing a thin film sensor according to an embodiment of the present invention;
FIG. 13 is a schematic diagram of a film sensor including three-way strain sensitive units according to an embodiment of the present invention;
FIG. 14 is a schematic cross-sectional view of a thin film sensor according to an embodiment of the present invention;
FIG. 15 is a schematic diagram of a layout of a thin film sensor including two three-way strain sensitive cells according to an embodiment of the present invention;
FIG. 16 is a schematic diagram of a layout of a thin film sensor including three-way strain sensitive cells according to an embodiment of the present invention;
reference numerals:
1-a first wire;
2-a second wire;
3-a third wire;
4-fourth wires;
5-a fifth wire;
6-sixth wires;
10-a thin film sensor;
11-a three-way strain sensitive unit;
A first strain gate of a 111-three-way strain sensitive cell;
1111—a first end of the first strained gate 111;
1112-a second end of the first strained gate 111;
a second strain gate of the 112-three-way strain sensitive cell;
1121-a first end of a second strain gate 112;
1122-a second end of the second strain gate 112;
113-a third strain gate of the three-way strain sensitive cell;
1131-a first end of the third strain gate 113;
1132-a second end of the third strain gate 113;
12-a first three-way strain sensitive unit;
121-a first strain gate of a first three-way strain sensitive cell 12;
1211-a first end of a first strain gate 121 of a first three-way strain sensitive cell 12;
122-a second strain gate of the first three-way strain sensitive cell 12;
123-a third strain gate of the first three-way strain sensitive cell 12;
1232-a second end of the third strained gate 123 of the first three-way strain sensitive cell 12;
13-a second three-way strain sensitive unit;
131-a first strain gate of a second three-way strain sensitive cell 13;
1311-a first end of the first strained gate 131 of the second three-way strain sensitive cell 13;
132-a second strain gate of a second three-way strain sensitive cell 13;
133-a third strain gate of the second three-way strain sensitive cell 13;
1332-a second end of the third strain gate 133 of the second three-way strain sensitive cell 13;
14-a third three-way strain sensitive unit;
141-the first strain gate of the third three-way strain sensitive cell 14;
1411-a first end of a first strain gate 141 of a third three-way strain sensitive cell 14;
142-a second strain gate of the third three-way strain sensitive cell 14;
143-a third strain gate of a third three-way strain sensitive cell 14;
1432-a second end of the third strain gate 143 of the third three-way strain sensitive cell 14;
15-a fourth three-way strain sensitive unit;
16-a first connection point;
17-a second connection point;
18-a third connection point;
19-fourth connection point;
21-a substrate layer;
22-an insulating layer;
A 23-strain sensitive layer;
24-a protective layer;
30-power supply.
Specific embodiments of the present invention have been shown by way of the above drawings and will be described in more detail below. The drawings and the written description are not intended to limit the scope of the inventive concepts in any way, but rather to illustrate the inventive concepts to those skilled in the art by reference to the specific embodiments.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. In the following description of the embodiments, the meaning of "a plurality" is two and more, unless explicitly defined otherwise.
The following embodiments may be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments. Embodiments of the present invention will be described below with reference to the accompanying drawings.
An embodiment of the present invention provides a thin film sensor for detecting strain and temperature of a member to be measured, which may be an engine blade or any other high temperature component.
As shown in fig. 1, a schematic structural diagram of a thin film sensor according to the present embodiment is provided, and the thin film sensor 10 includes: at least one three-way strain sensitive cell 11; each three-way strain sensitive unit 11 comprises three strain grids, namely a first strain grid 111, a second strain grid 112 and a third strain grid 113, which are connected in series to form an equilateral triangle; and detecting to obtain the pressure drop of each strain grating, and determining the strain quantity and/or the temperature of the member to be tested based on the pressure drop of each strain grating.
Specifically, the lengths, the sizes and the resistances of the three strain grids are the same, the three strain grids are connected in series to form an equilateral triangle, so that the angle between the strain grids is 60 Degrees (DEG), the number of the three-way strain sensitive units included in the film sensor can be set according to actual requirements, the three-way strain sensitive units can be set according to the areas of detection parameters required in practice, and when the areas required to be detected are larger, the three-way strain sensitive units can be expanded; and a plurality of three-way strain sensitive units are connected in series to realize detection of parameters with larger area.
Taking an example of a three-way strain sensitive cell 11, the three strain grids may be referred to as a first strain grid 111, a second strain grid 112 and a third strain grid 113, where a first end 1111 of the first strain grid 111 is a free end, a second end 1112 of the first strain grid 111 is connected to a first end 1121 of the second strain grid 112, that is, the second end 1112 of the first strain grid 111 is a common end with the first end 1121 of the second strain grid 112, a second end 1122 of the second strain grid 112 is connected to the first end 1131 of the third strain grid 113 to form a common end, and a second end 1132 of the third strain grid 113 is a free end.
In practice, the three-way strain sensitive element of the thin film sensor is powered by connecting a power source (such as a constant current source) between the first end 1111 of the first strain gate 111 and the second end 1132 of the third strain gate 113.
For a film sensor with a plurality of three-way strain sensitive units, such as a film sensor comprising two three-way strain sensitive units, the film sensor can be called a first three-way strain sensitive unit and a second three-way strain sensitive unit, the first end of a first strain grating in the first three-way strain sensitive unit is a free end, the second end of a third strain grating in the second three-way strain sensitive unit is a free end, power is supplied through the two free ends, the second end of the third strain grating in the first three-way strain sensitive unit is connected with the first end of the first strain grating in the second three-way strain sensitive unit, so that the first three-way strain sensitive unit and the second three-way strain sensitive unit are connected in series, or the first three-way strain sensitive unit and the second three-way strain sensitive unit share one edge, the area of the film sensor can be further reduced, namely the third strain grating in the first three-way strain sensitive unit is used as the first strain grating in the second three-way strain sensitive unit, and the first three-way strain sensitive unit and the second three-way strain sensitive unit form a serial structure; similarly, when there are more three-way strain sensitive units, the third three-way strain sensitive unit is connected in series with the second three-way strain sensitive unit, and the connection principle is similar to that of the two three-way strain sensitive units, and will not be described herein.
Because three strain grids of the three-way strain sensitive unit are connected in series, only 4 wires are required to be led out for detecting the pressure drop of each strain grid, and a plurality of strain grids are only required to be connected with a power supply for supplying power, so that the number of wires is effectively reduced, the size of the film sensor is effectively reduced, the three strain grids of the three-way strain sensitive unit form an equilateral triangle, the strain quantity of a component to be detected can be obtained based on the mapping relation between the component of the strain perpendicular to the strain grid and the parallel direction and the pressure drop, the temperature change of the surface of the component to be detected can be obtained by simple calculation based on the mapping relation between the apparent strain and the pressure drop, and the double-parameter detection of the strain and the temperature is realized under the condition that the area of the film sensor is small, so that the film sensor is miniaturized, multifunctional and integrated, and the problem of the internal space shortage of an engine in the prior art is solved.
It can be understood that the thin film sensor may further include a substrate, a transition layer, an insulating layer, a protective layer, and the like, where the three-way strain sensitive unit is disposed on the insulating layer, which is not described in detail, and in order to clearly show the structure of the sensitive unit, structures of other layers in the schematic structural diagram of the thin film sensor are not shown.
According to the thin film sensor provided by the embodiment, the three strain grids are connected in series to form the equilateral triangle by adopting the three-way strain sensitive unit, so that the pressure drop of each strain grid can be detected by fewer wires, the strain and the temperature change of a member to be detected can be obtained, the occupied area of the thin film sensor can be effectively reduced, the miniaturization, the multifunction and the integration of the thin film sensor can be realized, and the problem of insufficient internal space of an engine in the prior art can be solved.
In order to make the technical scheme of the invention clearer, another embodiment of the invention further supplements the system provided by the embodiment.
As an embodiment, in order to be able to detect a larger area of the parameter, the membrane sensor may optionally comprise at least two three-way strain sensitive units, each three-way strain sensitive unit being connected in series, in accordance with the above-described embodiments. Wherein, N is the quantity of three-way strain sensitive units, and the specific quantity of three-way strain sensitive units can be set according to actual demands.
Specifically, when the equilateral triangle three-way strain sensitive unit is adopted, the expansion of the film sensor is facilitated when the parameter with a larger area is required to be detected, namely, the strain and/or the temperature of the component to be detected with a larger area can be detected and calculated by adopting the film sensor with a plurality of three-way strain sensitive units connected in series.
As shown in fig. 2, an exemplary schematic structural diagram of the film sensor provided in this embodiment is shown, where the example is taken as an example of the film sensor 10 including two three-way strain sensitive units, and the two three-way strain sensitive units may be respectively referred to as a first three-way strain sensitive unit 12 and a second three-way strain sensitive unit 13, the first three-way strain sensitive unit 12 includes a first strain gate 121, a second strain gate 122 and a third strain gate 123, a first end 1211 of the first strain gate 121 is a free end, the second three-way strain sensitive unit 13 includes a first strain gate 131, a second strain gate 132 and a third strain gate 133, a second end 1332 of the third strain gate 133 is a free end, and the film sensor is powered by connecting a power source 30 between the two free ends 1211 and 1332, and the second end 1232 of the third strain gate 123 in the first three-way strain sensitive unit 12 is connected with the first end 1311 of the first strain gate 131 in the second three-way strain sensitive unit 13, so that the temperature of the first three-way strain sensitive unit 12 and the third strain gate 13 can be determined according to a temperature drop of each three-way strain sensitive element.
As shown in fig. 3, for another exemplary structural schematic diagram of the film sensor provided in this embodiment, when the number of the three-way strain sensing units n=3, the film sensor further includes a third three-way strain sensing unit 14, where the second end 1332 of the third strain grating 133 of the second three-way strain sensing unit 13 is connected to the first end 1411 of the first strain grating 141 of the third three-way strain sensing unit 14, and the second end 1432 of the third strain grating 143 of the third three-way strain sensing unit 14 is a free end, and is connected to the first end 1211 of the first strain grating 121 of the first three-way strain sensing unit 12 for power supply; similarly, the number of the three-way strain sensitive units is expanded according to actual requirements so as to detect the components to be detected with larger area.
In practical application, in order to facilitate expansion of more three-way strain sensitive units, the three-way strain sensitive units may be connected by connecting wires, so that different positional relationships may be provided between the three-way strain sensitive units, which is not limited to the positional relationship in fig. 3, and may be specifically set according to actual requirements, and as shown in fig. 4, an exemplary schematic structural diagram of the thin film sensor provided in this embodiment is illustrated; in the preparation process, the sensitive layer patterns of the film sensor can be set into an integral shape according to actual requirements, namely, a plurality of three-way strain sensitive units and connections between the three-way strain sensitive units can be formed simultaneously or can be formed respectively, so long as the film sensor structure can be realized, and the embodiment is not limited.
By expanding more three-way strain sensitive units, larger-area strain and temperature double-parameter detection can be realized based on one thin film sensor, and the prior art needs to adopt a plurality of thin film sensors to realize larger-area detection, so that the thin film sensor has a large coverage area.
Further, to ensure that the area of the thin film sensor is reduced under the condition that a larger area can be detected, two adjacent three-way strain sensitive units optionally share one strain gate as one side.
Specifically, as shown in fig. 5, which is a schematic structural diagram of another exemplary thin film sensor provided in this embodiment, the first three-way strain sensitive unit 12 and the second three-way strain sensitive unit 13 share one side, and the third three-way strain sensitive unit 14 and the fourth three-way strain sensitive unit 15 share one side, so that the area of the thin film sensor can be effectively reduced on the basis of ensuring a larger detection area, that is, the third strain grid in the first three-way strain sensitive unit 12 is used as the first strain grid in the second three-way strain sensitive unit 13, the third strain grid in the second three-way strain sensitive unit 13 is used as the first strain grid of the third three-way strain sensitive unit 14, and so on, the same time, each strain sensitive unit forms a serial structure, that is, each strain grid is connected in series.
The adjacent three-way strain sensitive units share one edge, so that the number of strain grids is further reduced, and the size of the thin film sensor is further reduced on the basis of ensuring detection of a larger area, thereby reducing the occupied space of the thin film sensor.
As another implementation manner, as shown in fig. 6, in order to effectively reduce the number of wires for detection and further reduce the size of the thin film sensor to reduce the occupied space of the thin film sensor, each three-way strain-sensing unit includes 4 connection points, namely, a first connection point 16, a second connection point 17, a third connection point 18 and a fourth connection point 19, where the first connection point 16 is connected to a first end of the first strain grid 111, the second connection point 17 is connected to a second end of the first strain grid 111 and a first end of the second strain grid 112, the third connection point 18 is connected to a second end of the second strain grid 112 and a first end of the third strain grid 113, the fourth connection point 19 is connected to a second end of the third strain grid 113, and two adjacent three-way strain-sensing units share two connection points; the thin film sensor 10 further includes: a first wire 1, a second wire 2, a third wire 3, and a fourth wire 4; the first wire 1 is connected with the first connection point 16 for measuring the voltage of the first connection point 16; the second wire 2 is connected to the second connection point 17 for measuring the voltage of the second connection point 17; the third wire 3 is connected to the third connection point 18 for measuring the voltage of the third connection point 18; the fourth wire 4 is connected to the fourth connection point 19 for measuring the voltage of the fourth connection point 19; the voltage at each connection point is used to determine the voltage drop of each strain gate so as to obtain the strain and temperature of the member to be tested.
As shown in fig. 7, an exemplary schematic structural diagram of a thin film sensor provided in this embodiment is shown, because two adjacent three-way strain sensing units share one side, two connection points are shared, that is, a third connection point of a first three-way strain sensing unit is used as a first connection point of a second three-way strain sensing unit, a fourth connection point of the first three-way strain sensing unit is used as a second connection point of the second three-way strain sensing unit, and so on, and not described again, as shown in fig. 7, the thin film sensor includes 4 three-way strain sensing units, and a total of 10 connection points are included, and correspondingly 10 wires are led out for detecting voltages at each connection point, that is, detecting voltages at two ends of each strain grating, and further calculating and obtaining voltage drops of each strain grating.
The three-way strain sensitive units only need one power supply to supply power, and the adjacent three-way strain sensitive units share connection points, namely share detection wires, so that the number of wires required to be led out is further reduced, and the size of the thin film sensor is reduced.
Further, in order to ensure the operation of the thin film sensor, power needs to be supplied to the strain gate of the thin film sensor, so that the thin film sensor can further comprise a fifth wire and a sixth wire, wherein the first end of the fifth wire is connected with the first connection point of the first three-way strain sensitive unit; the first end of the sixth wire is connected with the fourth connecting point of the last three-way strain sensitive unit; a power source is connected between the second end of the fifth wire and the second end of the sixth wire to power the thin film sensor.
As shown in fig. 8, for example, a schematic structural diagram of a film sensor provided in this embodiment, the film sensor includes 3 three-way strain sensitive units, a first end of a first strain grating of the first three-way strain sensitive unit 12 and a second end of a third strain grating of the third three-way strain sensitive unit lead out a fifth wire 5 and a sixth wire 6 through connection points, respectively, and a second end of the fifth wire 5 and a second end of the sixth wire 6 are connected to a power source 30.
The three-dimensional strain sensitive units are connected in series, the power supply to the strain sensitive units can be realized only by connecting two wires with a power supply, the large-area detection is realized by adopting a plurality of film sensors in the prior art, and each film sensor needs to be led out of the wires to be connected with the power supply.
The three-way integrated design is adopted in the thin film sensor, the number of wires exceeding half is effectively reduced through reasonable optimization of layout, the overall size of the thin film sensor is greatly reduced, the angle of strain can be detected by a triangular structure, the surface temperature change of a member to be detected can be obtained through simple calculation, the strain sensor and the temperature sensor are integrated, the miniaturization and the multifunction of the thin film sensor are realized, the integrated design can be structurally expanded according to actual requirements, the novel three-way integrated thin film sensor can be suitable for strain and temperature double-parameter detection in various area ranges, and the technical problems that the thin film sensor in the prior art is not compact enough in layout, excessive in number of wires, oversized in size, single in function, only can be used for detecting small-range strain and the like are solved.
The specific parameter detection method of the thin film sensor according to the present invention will be described below.
In another embodiment of the present invention, a method for detecting a strain and a temperature change of a member to be detected is provided, where the method is implemented based on the thin film sensor in the foregoing embodiment, and the thin film sensor is disposed in a region to be detected of the member to be detected, and a specific connection manner may be any implementation manner.
As shown in fig. 9, a flow chart of a parameter detection method provided in this embodiment is shown, and the method includes:
Step 301, obtaining the pressure drop of each strain grid of the thin film sensor; the film sensor comprises at least one three-way strain sensitive unit, each three-way strain sensitive unit comprises three strain grids, and the three strain grids are connected in series to form an equilateral triangle.
Specifically, the voltage detection device is used for detecting the voltages at two ends of each strain gate, the voltage drop of the strain gate is determined based on the voltages at two ends of the strain gate, and for a three-way strain sensitive unit, as three strain gates are connected in series, two adjacent strain gates share one detection point, and the voltages at the two ends of each strain gate can be obtained by detecting the voltages at four detection points in total.
Step 302, determining the strain and/or temperature of the member to be measured based on the pressure drop of each strain gate.
Specifically, three strain grids are connected in series to form an equilateral triangle, so that the angles of the strain direction and each strain grid are convenient to determine, when a certain strain is applied to the film sensor at a certain temperature, the strain magnitude of each strain grid has a certain mapping relation with the angle of the applied strain and each strain grid and the apparent strain of each strain grid, and the strain magnitude of each strain grid has a certain mapping relation with the resistance change amount or the voltage change amount of each strain grid.
The parameter detection method provided in this embodiment, based on the thin film sensor provided in the above embodiment, can conveniently obtain the strain amount and the temperature of the member to be detected by detecting the pressure drop of each strain gate, and can achieve the same technical effects as those of the above embodiment, which will not be described in detail herein.
In order to make the parameter detection method scheme of the present invention clearer, a further embodiment of the present invention further provides a supplementary explanation of the method provided in the above embodiment.
As an embodiment, to obtain the pressure drop of each strain grating, each three-way strain sensitive cell of the thin film sensor comprises 4 connection points; acquiring the pressure drop of each strain grating of the thin film sensor comprises:
acquiring a first voltage of a first connection point, a second voltage of a second connection point, a third voltage of a third connection point and a fourth voltage of a fourth connection point; determining a first voltage drop of the first strained gate based on the first voltage and the second voltage; determining a second voltage drop of the second strained gate based on the second voltage and the third voltage; a third voltage drop for a third strained gate is determined based on the third voltage and the fourth voltage.
Specifically, the first pressure drop, the second pressure drop and the third pressure drop are acquired in no sequence; the specific ways of obtaining the first voltage, the second voltage, the third voltage and the fourth voltage are described in detail in the foregoing embodiments, and are not described herein again.
Further, a specific process of obtaining the strain amount of the member to be measured is described in detail, that is, determining the strain amount of the member to be measured based on the pressure drop of each strain gate includes:
Determining a first strain component corresponding to the dependent variable based on the second pressure drop, the third pressure drop and the first mapping relation; determining a second strain component corresponding to the dependent variable based on the first pressure drop, the second pressure drop, the third pressure drop and the second mapping relation; a strain amount is determined based on the first strain component and the second strain component.
The first strain component is strain in a stretching direction generated by one strain grid in the film sensor due to deformation of a member to be detected; the second strain component is the strain which is generated by the deformation of the member to be measured and is perpendicular to the first strain component, the first mapping relation is the mapping relation between the first strain component and the second pressure drop and the third pressure drop, and the second mapping relation is the mapping relation between the second strain component and the first pressure drop, the second pressure drop and the third pressure drop; the first mapping relation and the second mapping relation are obtained in advance.
Exemplary, as shown in fig. 10, a schematic diagram of the component principle of the strain amount provided in this embodiment is shown. In this example, taking a three-way strain sensitive element as an example, assume that the direction of applying strain is θ with respect to the first strain grating 111, where the strain grating is merely a schematic location, and the specific structure is as described in the foregoing embodiment, where ε M represents the strain amount of the member to be measured, ε M cos θ represents the first strain component, and ε M sin θ represents the second strain component.
Further, to obtain the first strain component and the second strain component, determining the first strain component corresponding to the strain amount based on the second pressure drop, the third pressure drop, and the first mapping relationship includes:
based on the second pressure drop and the third pressure drop, the first strain component is determined by adopting the following formula 1:
Determining a second strain component corresponding to the strain amount based on the first pressure drop, the second pressure drop, the third pressure drop, and the second mapping relationship, including:
Based on the first pressure drop, the second pressure drop, and the third pressure drop, a second strain component is determined using equation 2 below:
Wherein epsilon M represents the strain quantity of the member to be measured, theta represents the angle between the strain direction and the first strain grating, epsilon M cos theta represents the first strain component, epsilon M sin theta represents the second strain component, and delta V 12、ΔV23 and delta V 34 are the variation quantities of the pressure drops of the first strain grating, the second strain grating and the third strain grating respectively; v 12、V23、V34 is the voltage drop of the first, second and third strained gates, respectively, and GF represents the strain coefficient, i.e. the strain sensitivity of the strained gate.
Specifically, the first mapping relationship is the mapping relationship expressed by the formula 1, and the second mapping relationship is the mapping relationship expressed by the formula 2; after the first strain component and the second strain component are determined, the strain amount of the member to be measured may be obtained based on the following equation 4:
Further, to obtain the temperature of the member to be measured, determining the temperature of the member to be measured based on the pressure drop of each strain gauge includes:
Determining apparent strain based on the first pressure drop, the second pressure drop, the third pressure drop, and the third mapping; determining a temperature variation based on the apparent strain; and determining the temperature of the member to be measured based on the temperature variation and the initial temperature.
Specifically, the third mapping relationship is a mapping relationship between apparent strain and the first pressure drop, the second pressure drop and the third pressure drop, and the third mapping relationship is also obtained in advance, and the apparent strain is also called thermal strain, that is, strain generated by temperature change of the strain grating.
Further, to obtain an apparent strain of the strain grating, determining the apparent strain based on the first pressure drop, the second pressure drop, the third pressure drop, and the third mapping relationship includes:
Based on the first pressure drop, the second pressure drop, and the third pressure drop, the apparent strain ε app is determined using equation 3 below:
Wherein Δv 12、ΔV23 and Δv 34 are the amounts of change in the pressure drop of the first, second, and third strain bars, respectively; v 12、V23、V34 is the voltage drop of the first, second and third strained gates, respectively, and GF represents the strain coefficient, i.e. the strain sensitivity of the strained gate.
That is, the third mapping relationship is the mapping relationship represented by formula 3, where the strain coefficient GF is obtained by testing in advance, and the specific obtaining manner is the prior art and will not be described herein.
After the apparent strain is obtained, the temperature change Δt may be obtained based on the following equation 5, and the temperature of the member to be measured may be determined based on the temperature change and the initial temperature.
Wherein ε app is the apparent strain, GF is the strain coefficient, i.e. the strain sensitivity of the strain gate, α is the temperature coefficient of resistance of the strain gate, and the temperature coefficient of resistance is obtained in advance, and the specific obtaining manner is the prior art and will not be described herein.
For the above formulas 1 to 3 of the present invention, it is specifically obtained by deriving the following procedure:
When the strain ε M is applied to the thin film sensor at a certain temperature T0, assuming that the angle between the applied strain direction and the strain grating S1 (i.e. the first strain grating 111) is θ, as shown in FIG. 11, which is a schematic diagram of the applied strain direction and the angles of the strain gratings according to the present embodiment, the strain magnitudes of the three strain gratings (S1, S2 (i.e. the second strain grating 112) and S3 (i.e. the third strain grating 113)) can be expressed as:
epsilon S1＝εMcosθ+εapp equation 6
Wherein, ε app is apparent strain (or thermally induced strain), ε M cos θ is the component of strain ε M in the S1 expansion and contraction direction, ε M cos (60 ° - θ) is the component of strain ε M in the S2 expansion and contraction direction, ε M cos [ pi-60 ° - θ ] is the component of strain ε M in the S3 expansion and contraction direction. Since the three strain gates are made of the same material and the size of the thin film sensor is small enough, when the three strain gates undergo the same temperature change, they can be considered to have the same apparent strain ε app, then the above equations 6-8 can be represented by the following equation 9:
From equation 9:
From equation 10:
Epsilon Mcosθ＝εS2-εS3 equation 11
Epsilon app＝εS1-εS2+εS3 equation 13
Since strain is related to resistance as follows:
Where ε represents strain, R 0 represents the original resistance of the strained gate, ΔR represents the resistance change of the strained gate, GF is the strain coefficient, and since a constant current source is used for power supply during measurement, it is possible to obtain:
Wherein V 0 represents the initial voltage drop of the strain gate, deltaV represents the voltage drop variation of the strain gate, I represents the constant current, and GF is the same as above.
Based on equations 11-13 and equation 15, it can be obtained:
Equation 16-18 obtains equation 1-3, so that by detecting the pressure drop of each strain grating, the pressure drop variation can be obtained, and then the first strain component epsilon M cos θ, the second strain component epsilon M sin θ and the apparent strain epsilon app are obtained based on the equation 1-3, and then the strain epsilon M can be obtained based on the first strain component epsilon M cos θ, the second strain component epsilon M sin θ and the equation 4, the temperature variation deltat is obtained based on the apparent strain epsilon app and the equation 5, and then the temperature T of the member to be detected can be obtained based on the temperature variation deltat and the initial temperature T0:
T=t0+Δt formula 19
After the strain amount ε M is obtained, the strain direction θ can also be obtained based on the strain amount ε M and the following equation 20:
Based on the film sensor in the foregoing embodiment, when there are multiple three-way strain sensitive units, each three-way strain sensitive unit detects the strain and the temperature of the corresponding area, and the calculation principle of the strain and the temperature of the corresponding area of each three-way strain sensitive unit is the same as that of one three-way strain sensitive unit, so long as the pressure drop of each strain grid is obtained by detection, the strain and the temperature of the corresponding area can be obtained based on the above calculation process, which is not described in detail.
It should be noted that each of the embodiments may be implemented alone or in any combination possible without conflict.
According to the parameter detection method provided by the invention, through the mapping relation between the first strain component, the second strain component and apparent strain obtained in advance and the pressure drop of each strain grid, the first strain component, the second strain component and the apparent strain can be obtained based on the detected pressure drop of each strain grid, so that the strain quantity and the temperature of the member to be detected are obtained, the miniaturization, the integration and the multifunction of the film sensor are realized, the strain size can be detected, the direction of strain generation can be detected, and the surface temperature change of the member to be detected can be obtained through simple calculation.
In still another embodiment of the present invention, a method for manufacturing a thin film sensor according to the foregoing embodiment of the present invention may be provided, as shown in fig. 12, which is a schematic flow chart of the method for manufacturing a thin film sensor according to the present embodiment, where the method includes:
step 401, cleaning the original substrate to obtain a cleaned substrate.
Specifically, the primary substrate may be a high temperature component such as an engine blade, or may be a nickel-based alloy substrate connected to the high temperature component, and cleaning the primary substrate may specifically include: the original substrate is polished, acetone, alcohol and deionized water are sequentially adopted for ultrasonic cleaning for a certain time, such as 15 minutes, the specific cleaning time can be set according to actual requirements, and drying is carried out after ultrasonic cleaning, such as compressed nitrogen drying, so that the subsequent deposition of an insulating layer or a transition layer is facilitated.
In step 402, an insulating layer is deposited on the cleaned substrate to obtain a first substrate.
Specifically, after the cleaned substrate is obtained, an insulating layer is deposited on the cleaned substrate to ensure the performance of the film sensor, wherein the insulating layer can be an Al 2O3 film layer, can be made of any practical insulating layer material, can be a composite insulating layer such as an Al 2O3-Ta2O5-Al2O3 composite insulating layer, is not limited in particular, and can be deposited in any practical manner such as pulse laser sputtering deposition (PLD) according to practical requirements.
For example, a high-purity metal Al target can be used as a target, and a pulsed laser sputtering deposition (PLD) mode is adopted to prepare an Al 2O3 film as an insulating layer, wherein specific preparation process parameters are Ar: o=49:2.3, a target base distance is 70mm (millimeters), a substrate temperature is 550 ℃, a laser intensity is 500mJ (millijoules), and a frequency is 5Hz (hertz), and in practical application, specific preparation process parameters can be set according to practical requirements, and are not limited to the above parameters.
Alternatively, a transition layer may be deposited on the substrate after cleaning, and then an insulating layer may be deposited on the transition layer, for example, the transition layer may be a NiCrAlY transition layer, which is not limited in detail.
Step 403, after patterning the strain gate on the first substrate, depositing a strain sensitive layer to obtain a second substrate, where the strain sensitive layer includes at least one three-way strain sensitive unit, each three-way strain sensitive unit includes three strain gates, and the three strain gates are connected in series to form an equilateral triangle.
Specifically, after the insulating layer is deposited to obtain the first substrate, the first substrate can be subjected to sensitive layer patterning to form a pattern corresponding to the sensitive layer, and then the strain sensitive layer is deposited based on the pattern, wherein the specific patterning principle is the prior art, and only the required pattern is required to be set according to actual requirements, so that the detailed description is omitted.
By way of example, the patterning may specifically include: placing the first substrate on a sucker of a spin coater, starting a vacuum pump to perform adsorption fixation, dripping glue, and homogenizing glue; baking for preset time (such as half an hour), wherein the temperature of a hot plate is 85 ℃, pre-baking is performed to remove the solvent contained in the adhesive film, the bonding force between the adhesive film and the substrate is improved, a mask is placed for exposure and development, 1g (g) of NaOH is dissolved in 199mL (milliliter) of deionized water to obtain a developing solution with the concentration of 0.5%, baking is performed for half an hour again, the temperature of the hot plate is 85 ℃, post-baking is performed to remove water left during development, and thus a pattern corresponding to the strain sensitive layer is obtained.
By way of example, a TiN (titanium nitride) film is deposited by adopting a pulse laser sputtering deposition (PLD) mode to serve as a strain sensitive layer, and the selected sensitive layer material TiN and Al 2O3 have good thermal expansion coefficient compatibility, hardness close to that of diamond, and resistance to abrasion and acid and alkali corrosion; the specific preparation process parameters can be as follows: the laser intensity is 500mJ (millijoules), the frequency is 5Hz, the substrate temperature is 400 ℃, the strain sensitive layer film is obtained, the stripping is carried out by using acetone solution, and the annealing is carried out for 2 hours at 800 ℃ in vacuum, so that the density of the TiN film is improved, and the internal defects of the film are reduced. In practical application, specific preparation process parameters can be set according to practical requirements, and are not limited to the parameter values.
The formed strain sensitive layer film comprises at least one three-way strain sensitive unit, each three-way strain sensitive unit comprises three strain grids, the three strain grids are connected in series to form an equilateral triangle, in practical application, the pressure drop of each strain grid is obtained through detection, the strain quantity and/or the temperature of a member to be detected are determined based on the pressure drop of each strain grid, and the specific parameter detection method is referred to the corresponding embodiment and is not repeated herein.
And step 404, forming a protective layer on the second substrate to obtain the thin film sensor.
Specifically, after the strain sensitive layer is deposited, in order to protect the strain sensitive layer, a protective layer needs to be covered on the surface of the strain sensitive layer, and any applicable material can be used as the protective layer, and the specific preparation process of the protective layer is the prior art and is not described herein.
For example, the high temperature resistant protective layer can be prepared by electron beam evaporation, for example, an Al 2O3 evaporation material with a grain size of 3-5mm (millimeter) and a purity of 99.99% and an Al 2O3-ZrO2(Al2O3:ZrO2 =94:6wt.% evaporation material with a ZrO 2 (zirconium dioxide) content of 6wt.% can be selected as evaporation sources to prepare the protective layer; firstly, after the vacuum degree in the cavity is better than 3×10 -5 Pa, raising the temperature of the substrate (such as in a filament heating mode) to 300 ℃; subsequently, after the working air pressure was better than 5×10 - 4 Pa and heat was preserved for half an hour, a protective layer was prepared at an evaporation rate of 5nm/s (nanometers/second), and after pre-evaporation for 2 minutes, a shutter was opened to start formal sputtering, forming a protective layer.
Compared with the prior art, the film sensor prepared and obtained by the method is a multifunctional three-way integrated film sensor, has a stable structure, is simple in preparation process, can obtain the surface temperature change of a member to be measured through calculation, can be expanded to realize the measurement of large-area strain and temperature parameters, reduces the number of strain grids and wires, and a plurality of three-way strain sensitive units are connected with one constant current source, so that the volume of the film sensor is reduced more effectively, the occupation of the internal space of an engine is reduced, and the preparation method is suitable for the preparation of the film sensor provided by any embodiment or implementation mode.
For example, the following description will be given of the manufacturing process of a film sensor including three-way strain sensitive units, as shown in fig. 13, which is a schematic structural diagram of the film sensor including three-way strain sensitive units provided in this embodiment, the film sensor 10 integrates three-way strain sensitive units, namely, a first three-way strain sensitive unit 12, a second three-way strain sensitive unit 13 and a third three-way strain sensitive unit 14, that is, three equilateral triangle structures, two adjacent triangles share one side, the lengths, sizes and resistances of 7 strain grids (S11-S17 in the figure) are the same, the fifth wire 5 and the sixth wire 6 are connected to a constant current source 30 for supplying power, and one wire (L11-L18 in the figure) is led out from each connection point for measuring the voltage at two ends of the strain grids to obtain the voltage drop of each strain grid, and the manufacturing process of the film sensor specifically includes:
1. And polishing the original substrate, sequentially ultrasonically cleaning the original substrate for 15 minutes by adopting acetone, alcohol and deionized water, and then drying the original substrate by adopting compressed nitrogen to obtain the cleaned substrate so as to facilitate the subsequent deposition of the insulating layer.
2. Preparing an Al 2O3 film serving as an insulating layer on the cleaned substrate by taking a high-purity metal Al target as a target material and adopting a pulse laser sputtering deposition (PLD) mode to obtain a first substrate, wherein the specific preparation process parameters are Ar: O=49:2.3, the target base distance is 70mm (millimeters), the substrate temperature is 550 ℃, the laser intensity is 500mJ, and the frequency is 5Hz (hertz)
3. And performing strain gate patterning on the first substrate. Placing a first substrate on a sucker of a spin coater, starting a vacuum pump to perform adsorption fixation, dripping glue, and homogenizing the glue; baking for half an hour, pre-baking at 85 ℃ to remove the solvent contained in the adhesive film, improving the bonding force between the adhesive film and the substrate, placing a mask plate for exposure and development, dissolving 1g (g) of NaOH in 199mL (milliliter) of deionized water to obtain a developing solution with the concentration of 0.5%, baking again for half an hour, baking at 85 ℃ to remove the water left during development, and obtaining the pattern corresponding to the strain sensitive layer, wherein the substrate comprising the pattern is called a patterned substrate.
4. Depositing a TiN (titanium nitride) film on the patterned substrate by adopting a pulse laser sputtering deposition (PLD) mode to serve as a strain sensitive layer, wherein the selected sensitive layer material TiN and Al 2O3 have good thermal expansion coefficient compatibility, the hardness is close to that of diamond, and the patterned substrate is resistant to abrasion and acid and alkali corrosion; the specific preparation process parameters can be as follows: the laser intensity is 500mJ (millijoules), the frequency is 5Hz, the substrate temperature is 400 ℃, the strain sensitive layer film is obtained, the stripping is carried out by using acetone solution, and the annealing is carried out for 2 hours at 800 ℃ in vacuum, so that the density of the TiN film is improved, and the internal defects of the film are reduced. The obtained strain sensitive layer comprises 3 three-way strain sensitive units as shown in fig. 13.
5. Preparing a high-temperature resistant protective layer by adopting an electron beam evaporation mode, for example, preparing the protective layer by taking an Al 2O3 evaporation material with the particle size of 3-5mm (millimeter) and the purity of 99.99% and an Al 2O3-ZrO2(Al2O3:ZrO2 =94:6wt.% evaporation material with the ZrO 2 (zirconium dioxide) content of 6wt.% as evaporation sources; firstly, after the vacuum degree in the cavity is better than 3×10 -5 Pa, raising the temperature of the substrate (such as in a filament heating mode) to 300 ℃; subsequently, after the working air pressure was better than 5×10 -4 Pa and heat was preserved for half an hour, a protective layer was prepared at an evaporation rate of 5nm/s (nanometers/second), and after pre-evaporation for 2 minutes, a shutter was opened to start formal sputtering, forming a protective layer.
As shown in fig. 14, a schematic cross-sectional structure of the thin film sensor provided in this embodiment is shown, the thin film sensor 10 includes a base layer 21, an insulating layer 22, a strain sensitive layer 23 and a protective layer 24, where the strain sensitive layer 23 includes at least one three-way strain sensitive unit 11 in the foregoing embodiment, and the strain sensitive layer is merely an exemplary illustration of the relationship with other layers, and the specific structure of the strain sensitive layer on the insulating layer is referred to the foregoing embodiment and will not be repeated herein.
As shown in fig. 15, for example, a layout schematic of the thin film sensor including two three-way strain sensitive units according to the present embodiment is provided, and a constant current source is connected between the fifth wire 5 and the sixth wire 6 for supplying power to the thin film sensor.
As shown in fig. 16, an exemplary layout diagram of a thin film sensor including three-way strain sensitive units according to the present embodiment is shown, where a constant current source is connected between the fifth wire 5 and the sixth wire 6 for supplying power.
The specific structure and the parameter detection method of the thin film sensor prepared by the preparation method of the thin film sensor provided in this embodiment have been described in detail in the foregoing embodiments, and the same technical effects can be achieved, which will not be described in detail herein.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It is to be understood that the invention is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (8)
1.A thin film sensor, comprising:
at least one three-way strain sensitive unit;
Each three-way strain sensitive unit comprises three strain grids and 4 connecting points, the three strain grids are connected in series to form an equilateral triangle, the first connecting point is connected with the first end of the first strain grid, the second connecting point is respectively connected with the second end of the first strain grid and the first end of the second strain grid, the third connecting point is respectively connected with the second end of the second strain grid and the first end of the third strain grid, and the fourth connecting point is connected with the second end of the third strain grid;
the pressure drop of each strain grating is obtained through detection, and the temperature of the member to be detected is determined based on the pressure drop of each strain grating;
wherein obtaining a pressure drop for each strain gate comprises: acquiring a first voltage of a first connection point, a second voltage of a second connection point, a third voltage of a third connection point and a fourth voltage of a fourth connection point; determining a first voltage drop of a first strained gate based on the first voltage and the second voltage; determining a second voltage drop for a second strained gate based on the second voltage and the third voltage; determining a third voltage drop for a third strained gate based on the third voltage and the fourth voltage;
determining the temperature of the component to be measured based on the pressure drop of each strain gate comprises: determining apparent strain based on the first pressure drop, the second pressure drop, the third pressure drop, and a third mapping relationship; determining a temperature variation based on the apparent strain; determining the temperature of the member to be measured based on the temperature variation and the initial temperature;
Wherein the determining apparent strain based on the first pressure drop, the second pressure drop, the third pressure drop, and a third mapping relationship comprises: determining apparent strain ε app using equation 3 below based on the first pressure drop, the second pressure drop, and the third pressure drop;
Wherein Δv 12、αV23 and Δv 34 are the amounts of change in the pressure drop of the first, second, and third strain bars, respectively; v 12、V23、V34 is the voltage drop of the first, second and third strained gates, respectively, GF represents the strain coefficient.
2. The thin film sensor of claim 1, wherein when the thin film sensor comprises at least two three-way strain sensitive units, each three-way strain sensitive unit is connected in series, and two adjacent three-way strain sensitive units share a strain gate as one side.
3. The membrane sensor of claim 2, wherein two adjacent three-way strain sensitive cells share two connection points;
The thin film sensor further includes: a first wire, a second wire, a third wire, and a fourth wire;
the first lead is connected with the first connection point and is used for measuring the voltage of the first connection point;
the second lead is connected with the second connection point and is used for measuring the voltage of the second connection point;
the third wire is connected with the third connection point and is used for measuring the voltage of the third connection point;
the fourth wire is connected with the fourth connection point and is used for measuring the voltage of the fourth connection point;
The voltage at each connection point is used to determine the voltage drop across each strained gate to obtain the temperature of the component under test.
4. The thin film sensor of claim 3, further comprising a fifth wire and a sixth wire;
The first end of the fifth wire is connected with the first connecting point of the first three-way strain sensitive unit;
the first end of the sixth wire is connected with the fourth connecting point of the last three-way strain sensitive unit;
And a power supply is connected between the second end of the fifth wire and the second end of the sixth wire to supply power to the thin film sensor.
5. The thin film sensor of any one of claims 1-4, further comprising: and determining the strain quantity of the member to be tested based on the pressure drop of each strain grating.
6. A method for detecting a parameter, comprising:
Acquiring the pressure drop of each strain grid of the thin film sensor; the thin film sensor comprises at least one three-way strain sensitive unit, each three-way strain sensitive unit comprises three strain grids and 4 connecting points, the three strain grids are connected in series to form an equilateral triangle, a first connecting point is connected with a first end of a first strain grid, a second connecting point is respectively connected with a second end of the first strain grid and a first end of a second strain grid, a third connecting point is respectively connected with a second end of the second strain grid and a first end of a third strain grid, and a fourth connecting point is connected with a second end of the third strain grid;
determining the temperature of the member to be tested based on the pressure drop of each strain grating;
Wherein, acquire the pressure drop of each strain grating of film sensor, include: acquiring a first voltage of a first connection point, a second voltage of a second connection point, a third voltage of a third connection point and a fourth voltage of a fourth connection point; determining a first voltage drop of a first strained gate based on the first voltage and the second voltage; determining a second voltage drop for a second strained gate based on the second voltage and the third voltage; determining a third voltage drop for a third strained gate based on the third voltage and the fourth voltage;
determining the temperature of the component to be measured based on the pressure drop of each strain gate comprises: determining apparent strain based on the first pressure drop, the second pressure drop, the third pressure drop, and a third mapping relationship; determining a temperature variation based on the apparent strain; determining the temperature of the member to be measured based on the temperature variation and the initial temperature;
wherein the determining apparent strain based on the first pressure drop, the second pressure drop, the third pressure drop, and a third mapping relationship comprises:
Determining apparent strain ε app using equation 3 below based on the first pressure drop, the second pressure drop, and the third pressure drop;
Wherein Δv 12、ΔV23 and Δv 34 are the amounts of change in the pressure drop of the first, second, and third strain bars, respectively; v 12、V23、V34 is the voltage drop of the first, second and third strained gates, respectively, GF represents the strain coefficient.
7. The method as recited in claim 6, further comprising: and determining the strain quantity of the member to be tested based on the pressure drop of each strain grating.
8. A method of manufacturing a thin film sensor according to any one of claims 1 to 5, comprising:
cleaning the original substrate to obtain a cleaned substrate;
Depositing an insulating layer on the cleaned substrate to obtain a first substrate;
After the first substrate is subjected to strain gate patterning, a strain sensitive layer is deposited, and a second substrate is obtained, wherein the strain sensitive layer comprises at least one three-way strain sensitive unit, each three-way strain sensitive unit comprises three strain gates, and the three strain gates are connected in series to form an equilateral triangle;
and forming a protective layer on the second substrate to obtain the thin film sensor.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| GB720325A (en) * | 1952-05-29 | 1954-12-15 | Saunders Roe Ltd | Improvements in or relating to strain gauges |
| GB9824756D0 (en) * | 1998-11-11 | 1999-01-06 | Europ Economic Community | A strain sensor and strain sensing apparatus |
| US8307715B2 (en) * | 2009-03-24 | 2012-11-13 | Direct Measurments, Inc. | Directly applied read and transmit—digital strain encoder and digital load cell |
| CN102944613B (en) * | 2012-11-16 | 2015-04-01 | 中国科学院半导体研究所 | Detecting and positioning system for optical fiber acoustic emission |
| EP3644009A1 (en) * | 2018-10-24 | 2020-04-29 | Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. | Elongation measuring structure with a structured support |
| CN109682318A (en) * | 2018-12-19 | 2019-04-26 | 中国电子科技集团公司第四十八研究所 | A kind of engine blade dynamic strain measure sensor and manufacturing method |
| CN210862557U (en) * | 2019-11-06 | 2020-06-26 | 北京希卓信息技术有限公司 | Optical fiber grating sensor device |
| CN110987089B (en) * | 2019-12-26 | 2021-01-15 | 华中科技大学 | Multifunctional flexible metamorphic sensor with single metal layer electrode, preparation method and application |
| CN111238361A (en) * | 2020-03-13 | 2020-06-05 | 北京石墨烯技术研究院有限公司 | Graphene temperature strain sensor |
| CN213778925U (en) * | 2020-12-14 | 2021-07-23 | 北京通为科技有限公司 | Three-dimensional strain sensor |
| CN113061838A (en) * | 2021-03-18 | 2021-07-02 | 中北大学 | Thin film sensor and preparation method thereof |
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