CN106323493B - Temperature field and heat flow density field measurement integrated device and preparation method thereof - Google Patents
Temperature field and heat flow density field measurement integrated device and preparation method thereof Download PDFInfo
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- 238000005259 measurement Methods 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 219
- 238000009529 body temperature measurement Methods 0.000 claims abstract description 110
- 238000010438 heat treatment Methods 0.000 claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 229910052697 platinum Inorganic materials 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000004642 Polyimide Substances 0.000 claims description 21
- 229920001721 polyimide Polymers 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 229910052681 coesite Inorganic materials 0.000 claims description 11
- 229910052906 cristobalite Inorganic materials 0.000 claims description 11
- 229910052682 stishovite Inorganic materials 0.000 claims description 11
- 229910052905 tridymite Inorganic materials 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 19
- 238000005516 engineering process Methods 0.000 abstract description 10
- 238000011160 research Methods 0.000 abstract description 8
- 238000000691 measurement method Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 29
- 230000004907 flux Effects 0.000 description 10
- 238000005459 micromachining Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001739 density measurement Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/186—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer using microstructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
- G01K17/006—Microcalorimeters, e.g. using silicon microstructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2211/00—Thermometers based on nanotechnology
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Abstract
The invention discloses a temperature field and heat flow density field measurement integrated device, which comprises a double-polished silicon wafer, a heating platinum wire, a first layer of temperature measurement platinum wire and a second layer of temperature measurement platinum wire, wherein the heating platinum wire is arranged on the first surface of the double-polished silicon wafer and is used for heating the double-polished silicon wafer; when the temperature field and the heat flow density field are measured by using a single device, the integration of high heat flow density heating and measurement can be realized, a new thermal measurement method is provided for the research of jet impact cooling, and the progress of the jet cooling technology is promoted.
Description
Technical Field
The invention relates to the technical field of thermal measurement, in particular to a temperature field and heat flow density field measurement integrated device and a preparation method thereof.
Background
Jet impingement cooling is widely applied to aerospace, electronic device cooling and industrial production, and has been widely concerned by the industry and academia as an efficient cooling method. The flow of jet impingement cooling near the impingement surface is very complex, the convective heat transfer coefficient on the impingement surface is very uneven, the inside of the impingement plate has a strong radial heat conduction problem, and different distribution rules are presented under different conditions. The experimental research is an important way for researching the jet flow impact cooling performance, and the problem of measuring a cooling surface temperature field and a heat flow density field is firstly solved in the heat transfer experiment. The existing measurement method usually adopts an infrared thermal imager or a liquid crystal display technology to shoot from the back of a jet impact flat plate, so as to realize the measurement of the temperature field of the jet impact cooling surface, and the average heat flux density is obtained by the heat flux density field through the heating voltage and current of the impact surface. The temperature field measurement mode requires that an impact flat plate in an experiment is transparent; in the measurement of the heat flow density field, because the radial heat conduction exists in the jet flow impact flat plate, the heat flow density field on the impact surface is usually uneven, and a large error exists in the treatment according to the uniform heat flow density. Meanwhile, the measurement mode is difficult to carry out measurement in a high-pressure environment and a small space range. At present, the MEMS micromachining technology has developed more maturely, and meanwhile, by utilizing the technology, different types of sensors such as temperature, heat flux density, pressure, bioelectric signals and the like are developed. The sensor based on the MEMS micromachining technology has the advantages of small size, fast response, high precision and the like, and can be machined in batches and arranged in an array. Therefore, the MEMS micromachining technology can effectively solve the problem of accurate measurement of a temperature field and a heat flow density field in jet flow impact cooling research under different experimental conditions, and the heating of an impact cooling surface is realized while measurement is carried out, so that a high heat flow density heating and temperature field and heat flow density field measuring device based on the MEMS micromachining technology is developed.
The existing temperature field and heat flux density field sensors designed and manufactured by using an MEMS micromachining technology have single functions, only can measure one parameter, and cannot realize high heat flux density heating while measuring. Moreover, only a single heat flow density or temperature signal can be obtained by one sensor, and a plurality of sensors are required to be arranged at different positions for obtaining field information, such as patents CN 102175339A, CN 202994696U and CN 202956212U. The relatively large size of the individual sensors makes it more likely that the acquired signals will represent an average signal over a small area rather than local temperature or heat flow density values. This is difficult to satisfy the accurate acquisition of temperature field, heat flux density field in the jet impingement cooling research, especially jet impingement cooling research under the less dimension. Additionally, the temperature or heat flux density sensor is arranged on the heating surface, so that the temperature measurement has large error due to the existence of contact thermal resistance. Therefore, a device integrating temperature field measurement, heat flux density field measurement and heating needs to be developed to meet the requirements of jet flow impingement cooling research under different conditions.
Disclosure of Invention
The invention aims to provide a temperature field and heat flow density field measurement integrated device with multiple measurement functions, good measurement effect and high measurement precision and a preparation method thereof, so as to solve the problems in the prior art, realize the integration of high heat flow density heating and measurement while realizing the measurement of a jet flow impact surface temperature field and a heat flow density field when a single device is utilized by the temperature field and the heat flow density field, provide a new thermal measurement method for the research of jet flow impact cooling, promote the improvement of a jet flow cooling technology and meet the thermal control problem of a high heat flow density surface.
In order to achieve the purpose, the invention provides the following scheme: the invention provides a temperature field and heat flow density field measurement integrated device which comprises a double-polished silicon wafer, a heating platinum wire, a first layer of temperature measurement platinum wire and a second layer of temperature measurement platinum wire, wherein the heating platinum wire is arranged on the first surface of the double-polished silicon wafer and is used for heating the double-polished silicon wafer, the first layer of temperature measurement platinum wire is arranged on the second surface of the double-polished silicon wafer, a polyimide layer and a second temperature measurement platinum wire are sequentially arranged on the first layer of temperature measurement platinum wire, the heating platinum wire is connected with an external circuit through electrodes, the first layer of temperature measurement platinum wire and the second layer of temperature measurement platinum wire are connected with temperature measurement electrodes through corresponding temperature measurement lead wires, and the temperature measurement electrodes are connected with a signal acquisition device.
Preferably, the double-polished silicon wafer forms an oxide layer playing an insulating role on the surface of the double-polished silicon wafer through thermal oxidation.
Preferably, the heating platinum wire is arranged on the first surface of the double polished silicon wafer in an annular arrangement mode.
Preferably, the heating platinum wire is divided into four heating units, and the four heating units are respectively connected with the heating power supply in a parallel connection mode.
Preferably, the thickness of the heating platinum wire is 200-500 nanometers.
Preferably, the first layer of temperature measurement platinum wire and the second layer of temperature measurement platinum wire are both annular temperature measurement platinum wires, and the number of the annular temperature measurement platinum wires is multiple.
Preferably, the temperature measurement lead is a temperature measurement platinum wire lead, the temperature measurement electrode is a temperature measurement platinum wire electrode, and an aluminum layer is evaporated on the temperature measurement platinum wire lead so as to reduce the influence of the resistance on the temperature measurement platinum wire lead on temperature measurement.
Preferably, SiO is evaporated on the surfaces of the heating platinum wire and the second layer of temperature measuring platinum wire2And (3) a layer.
Preferably, the SiO2The thickness of the layer is 200-500 nm.
The invention also provides a preparation method of the temperature field and heat flow density field measurement integrated device, which comprises the following steps:
carrying out high-temperature thermal oxidation on the double polished silicon wafer to form an oxide layer on the surface of the double polished silicon wafer, wherein the oxide layer plays an electric insulation role;
sputtering an annular heating platinum wire on the first surface of the double-polished silicon wafer, wherein the thickness of the annular heating platinum wire is preferably 200-500 nanometers;
depositing a layer of SiO on the surface of the annular heating platinum wire2Film of said SiO2The film thickness is preferably 200-500 nm;
method for removing SiO deposited on heating platinum wire electrode by dry etching2；
Sputtering a first layer of temperature measurement platinum wire on the second surface of the double-polished silicon wafer, wherein the first layer of temperature measurement platinum wire is connected with a temperature measurement platinum wire electrode through a corresponding temperature measurement platinum wire lead, the temperature measurement platinum wire electrode is connected with a signal acquisition device, and the thickness of the first layer of temperature measurement platinum wire is preferably 30-60 nanometers;
a second layer of temperature measuring platinum wire is arranged on the outer side of the first layer of temperature measuring platinum wire, the second layer of temperature measuring platinum wire is connected with a temperature measuring platinum wire electrode through a corresponding temperature measuring platinum wire lead, the temperature measuring platinum wire electrode is connected with a signal acquisition device, and the thickness of the second layer of temperature measuring platinum wire is preferably 30-50 nanometers;
evaporating a layer of aluminum on the temperature measurement platinum wire lead and the temperature measurement platinum wire electrode to reduce the influence of lead resistance on temperature measurement;
spin-coating a layer of polyimide between the first layer of temperature-measuring platinum wire and the second layer of temperature-measuring platinum wire;
depositing a layer of SiO on the surface of the second temperature-measuring platinum wire2Film of said SiO2The film thickness is preferably 200-500 nm;
removing SiO deposited on the temperature measurement platinum wire electrode of the second temperature measurement platinum wire by using a dry etching method2And finishing the processing.
Compared with the prior art, the invention has the following technical effects:
the invention provides a temperature field and heat flow density field measurement integrated device, which is mainly characterized in that a heating platinum wire and a first layer of temperature measuring platinum wire are respectively arranged on a first surface and a second surface of a double-polished silicon wafer, after the heating platinum wire is connected with an external circuit through an electrode, the heating platinum wire realizes heat flow density heating on the double-polished silicon wafer through the first surface, the first layer of temperature measuring platinum wire is connected with a temperature measuring electrode through a corresponding temperature measuring lead wire, the temperature measuring electrode is connected with a signal acquisition device, the first layer of temperature measuring platinum wire can directly measure the temperature of the double-polished silicon wafer through the second surface, and transmits a detected temperature signal to the signal acquisition device, the temperature transmitted from the second surface of the double-polished silicon wafer sequentially passes through the first temperature measuring platinum wire and a polyimide layer and then is transmitted to the second temperature measuring platinum wire, the second temperature measuring platinum wire detects the temperature and transmits the detected temperature signal to the signal acquisition device, because of the existence of the polyimide layer with low thermal conductivity, temperature difference can be generated between the first layer of temperature measurement platinum wire and the second layer of temperature measurement platinum wire, the larger the local heat flow density is, the thicker the polyimide layer is, the larger the temperature difference between the first layer of temperature measurement platinum wire and the second layer of temperature measurement platinum wire is (the thickness of the polyimide layer can be adjusted as required in use to control the temperature difference between the first layer of temperature measurement platinum wire and the second layer of temperature measurement platinum wire), and the local heat flow density is obtained by the Fourier heat conduction law under the condition that the thermal conductivity of the polyimide layer is known; the thickness of the polyimide layer is only 10 microns, and the heat conductivity coefficient of the polyimide material is only 0.2W/m K, so that the problem of radial conduction of heat in the polyimide layer caused by the radial convection heat transfer coefficient of the jet impact surface can be completely ignored, the local heat flow density can be truly reflected by the heat flow density calculated by utilizing the Fourier law, and the problems of poor measuring effect and low accuracy in the conventional measuring device are solved;
in addition, the heating platinum wire on the first surface of the double-polished silicon wafer and the second temperature measurement platinum wire on the outer side of the second surface are covered with a silicon dioxide layer, and the silicon dioxide has high heat conductivity coefficient and thin thickness, so that the temperature measured by the second temperature measurement platinum wire can be regarded as the temperature value of the jet flow impact surface, the local heat flow density can be measured, the temperature value of the jet flow impact surface can be obtained, and the problem of single measurement function in the conventional measurement device is solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic structural diagram of an integrated device for measuring a temperature field and a heat flux density field according to the present invention;
the temperature measurement device comprises a silicon wafer, a silicon dioxide layer, a first temperature measurement platinum wire, a second temperature measurement platinum wire, a polyimide layer, a first surface and a second surface, wherein the silicon wafer comprises 1-double polished silicon wafers, 2-heating platinum wires, 3-silicon dioxide layers, 4-first temperature measurement platinum wires, 5-second temperature measurement platinum wires, 6-polyimide layers, 8-first surfaces and 9-second surfaces.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a temperature field and heat flow density field measurement integrated device with multiple measurement functions, good measurement effect and high measurement precision and a preparation method thereof, so as to solve the problems in the prior art, realize the integration of high heat flow density heating and measurement while realizing the measurement of a jet flow impact surface temperature field and a heat flow density field when a single device is utilized by the temperature field and the heat flow density field, provide a new thermal measurement method for the research of jet flow impact cooling, promote the improvement of a jet flow cooling technology and meet the thermal control problem of a high heat flow density surface.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example 1:
this embodiment provides a temperature field, thermal current density field measurement integrated device, including two silicon chips of throwing 1, heating platinum silk 2, first layer temperature measurement platinum silk 4 and second floor temperature measurement platinum silk 5, heating platinum silk 2 sets up on two first surfaces 8 of silicon chip of throwing 1, be used for giving two heating of silicon chip of throwing 1, first layer temperature measurement platinum silk 4 sets up on two second surfaces 9 of silicon chip of throwing 1, polyimide layer 6 and second temperature measurement platinum silk have set gradually on the first layer temperature measurement platinum silk 4, heating platinum silk 2 is connected with external circuit through the electrode, first layer temperature measurement platinum silk 4 and second floor temperature measurement platinum silk 5 are all connected through corresponding temperature measurement lead wire and temperature measurement electrode, the temperature measurement electrode is connected with signal acquisition device.
The signal acquisition device is not shown in the figure, and can be a computer or any structure body with a signal acquisition and processing function; the arrangement positions of the first layer of temperature measuring platinum wire 4 and the second layer of temperature measuring platinum wire 5 are the same so as to improve the temperature measuring precision; the temperature measuring lead and the temperature measuring electrode of the first layer of temperature measuring platinum wire 4 and the second layer of temperature measuring platinum wire 5 can be the same temperature measuring lead and the same temperature measuring electrode or the same temperature measuring lead and the same temperature measuring electrode; in the invention, a plurality of temperature measuring units (namely a plurality of temperature measuring platinum wires) are arranged at different radial positions of a double-polished silicon wafer 1 to measure temperature values at different radial positions, each temperature measuring platinum wire is connected with a temperature measuring electrode through a temperature measuring lead, and the temperature measuring principle of the temperature measuring platinum wire is as follows: the resistivity of the platinum has a good linear relation with the temperature, and the temperature value of the platinum wire is obtained by measuring the resistance of the platinum wire according to the relation that the resistance of the platinum wire changes along with the temperature.
When the thickness of the polyimide layer 6 is 5-10 micrometers, the heat conductivity coefficient of the polyimide layer 6 is only 0.2W/m K, so that radial heat conduction in the polyimide layer 6 can be completely ignored, the radial heat conduction problem in heat flow density measurement is basically eliminated by utilizing the characteristic of low heat conductivity coefficient of a polyimide material, the measurement temperature difference of two layers of temperature measurement platinum wires is amplified, and local heat flow density information is accurately obtained.
Example 2:
the structure of the temperature field and heat flux density field measurement integrated device in this embodiment is the same as that in embodiment 1, except that:
in the embodiment, the double-polished silicon wafer 1 forms an oxide layer with an insulating effect on the surface of the double-polished silicon wafer 1 through thermal oxidation; the heating platinum wire 2 is arranged on the first surface 8 of the double-polished silicon wafer 1 in an annular arrangement mode, so that the heating platinum wire 2 conforms to a flow structure and heat transfer characteristics of jet flow impact cooling axial symmetry of a circular nozzle, the heating platinum wire 2 is divided into four heating units, the four heating units are respectively connected with a heating power supply in a parallel connection mode, the thickness of the heating platinum wire 2 is 200-500 nanometers, the heating platinum wire 2 is divided into four heating units, the heating voltage of each heating unit is reduced, heating with higher heat flow density is realized, the resistance value of each heating power supply is the same, and the four heating units are connected in parallel during heating, so that uniform heat flow density heating of the first surface 8 of the double-polished silicon wafer 1 is realized; the first layer of temperature measurement platinum wire 4 and the second layer of temperature measurement platinum wire 5 are both annular temperature measurement platinum wires, a plurality of annular temperature measurement platinum wires can be arranged at different radial positions to measure temperature values at different radial positions, and are connected with temperature measurement electrodes through temperature measurement lead wires to transmit temperature measurement signals to a signal acquisition device;
in order to reduce the influence of the resistance on the temperature measurement lead and the temperature measurement electrode on temperature measurement, the temperature measurement lead is set as a temperature measurement platinum wire lead, the temperature measurement electrode is a temperature measurement platinum wire electrode, and the temperature is measuredAn aluminum layer is evaporated on the platinum wire lead to reduce the influence of the resistance on the temperature measurement platinum wire lead on the temperature measurement; in order to protect the heating platinum wire 2 so that the heat generated by the heating platinum wire 2 can be surely transmitted from the first surface 8 of the double polished silicon wafer 1, a SiO is evaporated on the surface of the heating platinum wire 22Layer, and in order to ensure that the temperature measured by the second layer of temperature measurement platinum wire 5 is the temperature of the surface of the impact jet, SiO is evaporated on the surface of the second layer of temperature measurement platinum wire 52When the heating platinum wire 2 or the second temperature measurement platinum wire 5 is connected with an external circuit, removing SiO on the heating platinum wire 2 electrode and the temperature measurement platinum wire electrode by dry etching2Layers and polyimide layer 6 to connect to external circuitry.
Example 3:
the invention also provides a preparation method of the temperature field and heat flow density field measurement integrated device, which comprises the following steps:
carrying out high-temperature thermal oxidation on the double-polished silicon wafer 1 to form an oxide layer on the surface of the double-polished silicon wafer, wherein the oxide layer plays an electric insulation role;
sputtering an annular heating platinum wire with the thickness of 200-500 nanometers on the first surface 8 of the double polished silicon wafer 1;
depositing a layer of SiO with the thickness of 200-500 nanometers on the surface of the annular heating platinum wire2A film;
method for removing SiO deposited on heating platinum wire electrode by dry etching2；
Sputtering a first layer of temperature measurement platinum wire 4 with the thickness of 30-60 nanometers on the second surface 9 of the double-polished silicon wafer 1, wherein the first layer of temperature measurement platinum wire 4 is connected with a temperature measurement platinum wire electrode through a corresponding temperature measurement platinum wire lead, and the temperature measurement platinum wire electrode is connected with a signal acquisition device;
a second layer of temperature measuring platinum wire 5 with the thickness of 30-50 nanometers is arranged on the outer side of the first layer of temperature measuring platinum wire 4, the second layer of temperature measuring platinum wire 5 is connected with a temperature measuring platinum wire electrode through a corresponding temperature measuring platinum wire lead, and the temperature measuring platinum wire electrode is connected with a signal acquisition device;
evaporating a layer of aluminum on the temperature measurement platinum wire lead and the temperature measurement platinum wire electrode to reduce the influence of lead resistance on temperature measurement;
a layer of polyimide is coated between the first layer of temperature measurement platinum wire 4 and the second layer of temperature measurement platinum wire 5 in a spinning mode;
depositing a layer of SiO with the thickness of 200-500 nanometers on the surface of the second temperature measurement platinum wire2A film;
removing SiO deposited on the temperature measurement platinum wire electrode of the second temperature measurement platinum wire by using a dry etching method2And finishing the processing.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.
The principle and the implementation mode of the invention are explained by applying a specific example, and the description of the embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (13)
1. The integrated device for measuring the temperature field and the heat flow density field is characterized by comprising a double-polished silicon wafer, a heating platinum wire, a first layer of temperature measuring platinum wire and a second layer of temperature measuring platinum wire, wherein the heating platinum wire is arranged on the first surface of the double-polished silicon wafer in an annular arrangement mode and used for heating the double-polished silicon wafer, the first layer of temperature measuring platinum wire is arranged on the second surface of the double-polished silicon wafer, a polyimide layer and the second layer of temperature measuring platinum wire are sequentially arranged on the first layer of temperature measuring platinum wire, the heating platinum wire is connected with an external circuit through electrodes, the first layer of temperature measuring platinum wire and the second layer of temperature measuring platinum wire are connected with temperature measuring electrodes through corresponding temperature measuring lead wires, the temperature measuring electrodes are connected with a signal acquisition device, the first layer of temperature measuring platinum wire and the second layer of temperature measuring platinum wire are annular temperature measuring platinum wires, the first layer of temperature measuring platinum wire is multiple, the second layer of temperature measurement platinum wires are also multiple.
2. The integrated device for measuring the temperature field and the heat flow density field according to claim 1, wherein the double-polished silicon wafer is subjected to thermal oxidation to form an oxide layer on the surface of the double-polished silicon wafer, wherein the oxide layer has an insulating effect.
3. The integrated device for measuring the temperature field and the heat flow density field according to claim 1, wherein the heating platinum wire is divided into four heating units, and the four heating units are respectively connected with a heating power supply in a parallel connection manner.
4. The integrated device for measuring the temperature field and the heat flow density field according to claim 1, wherein the thickness of the heating platinum wire is 200-500 nm.
5. The integrated device for measuring the temperature field and the heat flow density field according to claim 1, wherein the temperature measuring lead is a temperature measuring platinum wire lead, the temperature measuring electrode is a temperature measuring platinum wire electrode, and an aluminum layer is evaporated on the temperature measuring platinum wire lead so as to reduce the influence of the resistance on the temperature measuring platinum wire lead on temperature measurement.
6. The integrated device for measuring the temperature field and the heat flow density field according to claim 1, wherein a SiO2 layer is evaporated on the surfaces of the heating platinum wire and the second layer of temperature measuring platinum wire.
7. The integrated device for measuring the temperature field and the heat flow density field according to claim 6, characterized in that: the thickness of the SiO2 layer is 200-500 nanometers.
8. A preparation method of a temperature field and heat flow density field measurement integrated device is characterized by comprising the following steps:
carrying out high-temperature thermal oxidation on the double polished silicon wafer to form an oxide layer on the surface of the double polished silicon wafer, wherein the oxide layer plays an electric insulation role;
sputtering an annular heating platinum wire on the first surface of the double-polished silicon wafer;
depositing a SiO2 film on the surface of the annular heating platinum wire;
removing SiO2 deposited on the heating platinum wire electrode by using a dry etching method;
sputtering a first layer of temperature measurement platinum wire on the second surface of the double-polished silicon wafer, wherein the first layer of temperature measurement platinum wire is connected with a temperature measurement platinum wire electrode through a corresponding temperature measurement platinum wire lead, and the temperature measurement platinum wire electrode is connected with a signal acquisition circuit;
a second layer of temperature measuring platinum wire is arranged on the outer side of the first layer of temperature measuring platinum wire, the second layer of temperature measuring platinum wire is connected with a temperature measuring platinum wire electrode through a corresponding temperature measuring platinum wire lead, and the temperature measuring platinum wire electrode is connected with a signal acquisition device;
the first layer of temperature measurement platinum wire and the second layer of temperature measurement platinum wire are both annular temperature measurement platinum wires, and the number of the annular temperature measurement platinum wires is multiple;
evaporating a layer of aluminum on the temperature measurement platinum wire lead and the temperature measurement platinum wire electrode to reduce the influence of lead resistance on temperature measurement;
spin-coating a layer of polyimide between the first layer of temperature-measuring platinum wire and the second layer of temperature-measuring platinum wire;
depositing a SiO2 film on the surface of the second layer of temperature-measuring platinum wire;
and removing SiO2 deposited on the temperature measurement platinum wire electrode of the second layer of temperature measurement platinum wire by using a dry etching method to finish processing.
9. The method for preparing the temperature field and heat flow density field measurement integrated device according to claim 8, wherein the method comprises the following steps: the thickness of the annular heating platinum wire is 200-500 nanometers.
10. The method for preparing the temperature field and heat flow density field measurement integrated device according to claim 8, wherein the method is characterized in thatIn the following steps: the SiO2The thickness of the film is 200 to 500 nm.
11. The method for preparing the temperature field and heat flow density field measurement integrated device according to claim 8, wherein the method comprises the following steps: the thickness of the first layer of temperature measurement platinum wire is 30-60 nanometers.
12. The method for preparing the temperature field and heat flow density field measurement integrated device according to claim 8, wherein the method comprises the following steps: the thickness of the second layer of temperature measurement platinum wire is 30-50 nanometers.
13. The method for preparing the temperature field and heat flow density field measurement integrated device according to claim 8, wherein the method comprises the following steps: the SiO2The thickness of the film is 200 to 500 nm.
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| CN201610652802.XA CN106323493B (en) | 2016-08-10 | 2016-08-10 | Temperature field and heat flow density field measurement integrated device and preparation method thereof |
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| CN201610652802.XA CN106323493B (en) | 2016-08-10 | 2016-08-10 | Temperature field and heat flow density field measurement integrated device and preparation method thereof |
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| CN106323493A CN106323493A (en) | 2017-01-11 |
| CN106323493B true CN106323493B (en) | 2020-05-22 |
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