CN106323493A - Temperature field and heat flow density field measurement integrated device and manufacturing method therefor - Google Patents
Temperature field and heat flow density field measurement integrated device and manufacturing method therefor Download PDFInfo
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- CN106323493A CN106323493A CN201610652802.XA CN201610652802A CN106323493A CN 106323493 A CN106323493 A CN 106323493A CN 201610652802 A CN201610652802 A CN 201610652802A CN 106323493 A CN106323493 A CN 106323493A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/186—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer using microstructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
- G01K17/006—Microcalorimeters, e.g. using silicon microstructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2211/00—Thermometers based on nanotechnology
Abstract
The invention discloses a temperature field and heat flow density field measurement integrated device, and the device comprises a double parabolic silicon wafer, a heating platinum wire, a first temperature measurement platinum wire layer, and a second temperature measurement platinum wire layer. The heating platinum wire is disposed on the first surface of the double parabolic silicon wafer, and is used for heating the double parabolic silicon wafer. The first temperature measurement platinum wire layer is disposed on the second surface of the double parabolic silicon wafer, and is sequentially provided with a polyimide layer and a second temperature measurement platinum wire. The heating platinum wire is connected with an external circuit through an electrode. The first and second temperature measurement platinum wire layers are connected with temperature measurement electrodes through the corresponding temperature measurement lead wires. The temperature measurement electrodes are connected with a signal collection device. The device provided by the invention achieves the simultaneous measurement of the temperature field and heat flow density field of a jet flow impact surface, also can achieve the integration of high-flux heating and measurement, provides a new thermotechnical measurement method for the research of the jet flow impact cooling, and promotes the development of the jet flow cooling technology.
Description
Technical field
The present invention relates to thermal measurement technical field, particularly relate to a kind of temperature field, the integration of heat flow density field measurement
Device and preparation method thereof.
Background technology
Jet impulse cooling is widely used in the middle of Aero-Space, electronic device cooling and commercial production, as one
The efficient type of cooling is constantly subjected to the extensive concern of industrial quarters and academia.Jet impulse is cooled in the stream near shock surface
Dynamic extremely complex, the convection transfer rate on shock surface is the most uneven, and impact flat board is internal exists stronger radial direction heat conduction
Problem, and under different condition, present the different regularities of distribution.Experimentation is the important of research jet impulse cooling performance
Approach, and heat transfer experiment first has to solve be cooling surface temperature field, the measurement problem of heat flux density field.Existing measurement
Method generally uses thermal infrared imager or lcd technology to shoot from the back side of jet impulse flat board, it is achieved jet impulse
The measurement of cooling surface temperature field, heat flux density field then by heating voltage and the electric current of shock surface, obtains average hot-fluid
Density.This temperature field measurement mode needs the impact flat board in experiment to be transparent；In the measurement of heat flux density field, owing to penetrating
Stream impact flat board is internal exists radially heat conduction, and the heat flux density field of shock surface is typically uneven, close according to Uniform Heat
Degree goes to process and there is bigger error.Meanwhile, this metering system is difficult to measure in environment under high pressure, little spatial dimension.
MEMS micro-processing technology has developed more ripe at present, utilizes this technology simultaneously, it has been developed that different types of temperature
The sensors such as degree, heat flow density, pressure, bioelectrical signals.It is less, loud that sensor based on MEMS micro-processing technology has size
Should soon, precision advantages of higher, simultaneously can be with batch machining, array is arranged.Therefore, employing MEMS micro-processing technology can be with efficient solution
The temperature field that certainly runs in jet impulse Study on Cooling under different experimental conditions, the accurate measurement of heat flux density field, measurement same
The heating on Shi Shixian impinging cooling surface, thus develop the heating of a kind of high heat flux based on MEMS micro-processing technology and temperature
Degree field, heat flow density field measurement device.
Temperature field, heat flow density field sensor that the most existing MEMS of utilization micro-processing technology manufactures and designs are multi-functional relatively
For single, a kind of parameter can only be measured, and high heat flux heating can not be realized while measuring.And a sensor is only
Can obtain single heat flow density or temperature signal, obtaining field information needs to arrange multiple sensors, the most specially at diverse location
Profit CN 102175339 A, CN 202994696 U and CN 202956212 U etc..Single size sensor is relatively large, this
Make the more average signal that must represent in a zonule of signal rather than the temperature of locality or the heat flow density obtained
Value.This is difficult to meet to temperature field, the accurate acquisition of heat flux density field in jet impulse Study on Cooling, especially under smaller scale
Jet impulse Study on Cooling.Additionally temperature or heat-flow density sensor are arranged in and add hot surface, due to thermal contact resistance
Exist, temperature survey can be made to there is bigger error.It is thus desirable to a kind of temperature field of exploitation, the close field measurement of hot-fluid and heating one
The device of body, to meet the demand of the jet impulse Study on Cooling under different condition.
Summary of the invention
It is an object of the invention to provide and a kind of measure temperature field, the hot-fluid that function is many, measurement effect good and certainty of measurement is high
Density field measures integrated apparatus and preparation method thereof, to solve the problem that above-mentioned prior art exists so that temperature field, hot-fluid
While density field realizes jet impulse surface temperature field and heat flow density field measurement when utilizing single assembly, moreover it is possible to realize height
Heat flow density heating is integrated with measure, for the thermal measurement method that the research offer of jet impulse cooling is new, promotes jet
The progress of cooling technology, to meet the thermal control problem on high heat flux surface.
For achieving the above object, the invention provides following scheme: the present invention invents offer a kind of temperature field, heat flow density
Field measurement integrated apparatus, throws silicon chips, heating platinum filament, ground floor thermometric platinum filament and second layer thermometric platinum filament including double, described in add
Hot platinum filament is arranged on described double first surface throwing silicon chip, for described double heating throwing silicon chip, described ground floor thermometric
Platinum filament is arranged on described double second surface throwing silicon chip, described ground floor thermometric platinum filament is disposed with polyimide layer and
The top of the second thermometric platinum filament, described heating platinum filament is connected with external circuit by electrode, described ground floor thermometric platinum filament and
Second layer thermometric platinum filament is all connected by corresponding thermometric lead-in wire and thermometric electrode, described thermometric electrode and signal pickup assembly phase
Connect.
Preferably, described double throwing silicon chip passes through thermal oxide and forms the oxidation playing insulating effect at described double throwing silicon chip surfaces
Layer.
Preferably, described heating platinum filament uses the mode being circular layout, and is arranged on described double first surface throwing silicon chip.
Preferably, described heating platinum filament is divided into four heating units, described four heating units to use mode in parallel to divide
It is not connected with heating power supply.
Preferably, the thickness of described heating platinum filament is 200～500 nanometers.
Preferably, described ground floor thermometric platinum filament and second layer thermometric platinum filament are annular thermometric platinum filament, and described annular is surveyed
Temperature platinum filament is multiple.
Preferably, described thermometric lead-in wire goes between for thermometric platinum filament, and described thermometric electrode is thermometric platinum electrode, described thermometric
The upper evaporation of platinum filament lead-in wire has an aluminium lamination, to reduce the impact that the resistance versus temperature on thermometric platinum filament lead-in wire is measured.
Preferably, the surface evaporation of described heating platinum filament and described second layer thermometric platinum filament has a SiO2Layer.
Preferably, described SiO2The thickness of layer is 200～500 nanometers.
Present invention also offers a kind of temperature field, the preparation method of heat flow density field measurement integrated apparatus, including following
Step:
Double throwing silicon chips are carried out high-temperature thermal oxidation with its surface formed oxide layer, described oxide layer play electric insulation make
With；
Sputtering annular-heating platinum filament on silicon chip first surface in described double throwing, described annular-heating platinum filament thickness is preferably
200～500 nanometers；
One layer of SiO is deposited on the surface of annular-heating platinum filament2Thin film, described SiO2Film thickness is preferably 200～500
Nanometer；
The method utilizing dry etching removes the SiO of deposition in heating platinum electrode2；
Sputtering ground floor thermometric platinum filament on the second surface of double throwing silicon chips, described ground floor thermometric platinum filament is by corresponding
Thermometric platinum filament lead-in wire and thermometric platinum electrode connect, and described thermometric platinum electrode is connected with signal pickup assembly, and described first
Layer thermometric platinum filament thickness is preferably 30～60 nanometers；
Be provided with second layer thermometric platinum filament in the outside of described ground floor thermometric platinum filament, described second layer thermometric platinum filament passes through
Corresponding thermometric platinum filament lead-in wire and thermometric platinum electrode connect, and described thermometric platinum electrode is connected with signal pickup assembly, institute
State second layer thermometric platinum filament thickness and be preferably 30～50 nanometers；
One layer of aluminum is evaporated, to reduce lead resistance to temperature on described thermometric platinum filament lead-in wire and described thermometric platinum electrode
The impact measured；
Spin coating one strata acid imide between described ground floor thermometric platinum filament and described second layer thermometric platinum filament；
One layer of SiO is deposited in the surface of described second thermometric platinum filament2Thin film, described SiO2Film thickness be preferably 200～
500 nanometers；
The method utilizing dry etching removes the SiO of deposition in the thermometric platinum electrode of the second thermometric platinum filament2, complete to add
Work.
The present invention obtains relative to prior art and knows clearly techniques below effect:
The invention provides a kind of temperature field, heat flow density field measurement integrated apparatus, mainly by double throwing silicon chips
First surface and second surface on be respectively provided with heating platinum filament and ground floor thermometric platinum filament, heating platinum filament by electrode with outside
After circuit connects, heating platinum filament realizes heat flow density by first surface to double throwing silicon chips and heats, and ground floor thermometric platinum filament passes through
Corresponding thermometric lead-in wire is connected with thermometric electrode, and thermometric electrode is connected with signal pickup assembly, and ground floor thermometric platinum filament can
Directly to be measured double temperature throwing silicon chip by second surface, and the temperature signal detected is passed to signal pickup assembly,
After the temperature passed out by the second surface of double throwing silicon chips sequentially passes through the first thermometric platinum filament and polyimide layer, it is delivered to
Two thermometric platinum filaments, temperature is detected, and the temperature signal detected is passed to signal pickup assembly by the second thermometric platinum filament,
Due to the existence of the polyimide layer of low thermal conductivity, between ground floor thermometric platinum filament and second layer thermometric platinum filament, temperature can be produced
Difference, local heat flow density is the biggest, and polyimide layer is the thickest, and the temperature difference between the two is the biggest (can be adjusted in use as required
The thickness of whole polyimide layer, controls temperature difference size between the two), utilize ground floor thermometric platinum filament and second layer thermometric platinum
The temperature difference between Si, in the case of known polyimide layer heat conductivity, obtains the heat of locality by Fourier Heat Conduction law
Current density；Wherein, owing to polyimides layer thickness only has 10 micron dimensions, and the heat conductivity of polyimide material own is only
0.2W/m K, the heat radially conduction in polyimide layer therefore caused due to the jet impulse surface advection coefficient of heat transfer
Problem can ignore completely, thus utilize the calculated heat flow density of Fourier law can reflect truly locality heat
Current density, thus solve in existing measurement apparatus the problem that measurement effect is poor, degree of accuracy is low；
It addition, in the present invention also on double throwing silicon chip first surfaces heating platinum filament and second surface outside the second thermometric
Platinum filament all covers a silicon dioxide layer, and the more high and thick degree of heat conductivity of silicon dioxide is relatively thin so that second layer thermometric platinum filament is surveyed
The temperature measured is it is believed that be exactly the temperature value on jet impulse surface, such that it is able to same record when density of geothermal heat flow
Time, additionally it is possible to obtain the temperature value on jet impulse surface, solve the problem measuring function singleness in existing measurement apparatus.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
The accompanying drawing used is needed to be briefly described, it should be apparent that, the accompanying drawing in describing below is only some enforcements of the present invention
Example, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to according to these accompanying drawings
Obtain other accompanying drawing.
Fig. 1 is a kind of temperature field of the present invention, the structural representation of heat flow density field measurement integrated apparatus；
Wherein, 1-double throwing silicon chip, 2-heat platinum filament, 3-silicon dioxide layer, 4-ground floor thermometric platinum filament, 5-second layer thermometric
Platinum filament, 6-polyimide layer, 8-first surface, 9-second surface.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
It is an object of the invention to provide and a kind of measure temperature field, the hot-fluid that function is many, measurement effect good and certainty of measurement is high
Density field measures integrated apparatus and preparation method thereof, to solve the problem that above-mentioned prior art exists so that temperature field, hot-fluid
While density field realizes jet impulse surface temperature field and heat flow density field measurement when utilizing single assembly, moreover it is possible to realize height
Heat flow density heating is integrated with measure, for the thermal measurement method that the research offer of jet impulse cooling is new, promotes jet
The progress of cooling technology, to meet the thermal control problem on high heat flux surface.
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, real with concrete below in conjunction with the accompanying drawings
The present invention is further detailed explanation to execute mode.
Embodiment 1:
The present embodiment provides a kind of temperature field, heat flow density field measurement integrated apparatus, throws silicon chip 1, heating platinum including double
Silk 2, ground floor thermometric platinum filament 4 and second layer thermometric platinum filament 5, described heating platinum filament 2 is arranged on described double the first table throwing silicon chip 1
On face 8, for described double heating throwing silicon chip 1, described ground floor thermometric platinum filament 4 is arranged on the second of described double throwing silicon chip 1
On surface 9, described ground floor thermometric platinum filament 4 is disposed with polyimide layer 6 and the second thermometric platinum filament, described heating platinum filament
2 are connected with external circuit by electrode, and described ground floor thermometric platinum filament 4 and second layer thermometric platinum filament 5 are all surveyed by corresponding
Temperature lead-in wire and thermometric electrode connect, and described thermometric electrode is connected with signal pickup assembly.
Wherein, signal pickup assembly is the most not shown, and it can be computer or have signal acquisition process function
Arbitrary structures body；Ground floor thermometric platinum filament 4 is identical with the position of second layer thermometric platinum filament 5, to improve temperature measurement accuracy；The
The thermometric lead-in wire of one layer of thermometric platinum filament 4 and second layer thermometric platinum filament 5 and thermometric electrode can be same thermometric lead-in wire and thermometric electricity
Pole or be single thermometric lead-in wire and thermometric electrode；In the different radially multiple surveys of location arrangements of double throwing silicon chips 1 in the present invention
Temperature unit (the most multiple thermometric platinum filaments composition), to measure the temperature value of different radially position, each thermometric platinum filament is by surveying
Temperature lead-in wire is connected with thermometric electrode, and the temperature-measurement principle of thermometric platinum filament is: the resistivity of platinum and temperature have good linear relationship, profit
The relation varied with temperature with platinum wire resistance, obtains the temperature value of platinum filament by measuring the resistance of platinum filament.
When being 5～10 microns due to the thickness of polyimide layer 6, the heat conductivity of polyimide layer 6 is only 0.2W/m K,
Therefore, the radial direction heat conduction in polyimide layer 6 can neglect completely, utilizes the feature of polyimide material low thermal conductivity,
Essentially eliminate the radial guiding heat problem in Heat flux calculation, be exaggerated the measurement temperature difference of two-layer thermometric platinum filament simultaneously, and then
Obtain the heat flow density information of locality exactly.
Embodiment 2:
A kind of temperature field of the present embodiment, heat flow density field measurement integrated apparatus structure same as in Example 1, difference exist
In:
In the present embodiment, double throwing silicon chips 1 pass through thermal oxide and form the oxygen playing insulating effect on described double throwing silicon chip 1 surfaces
Change layer；Heating platinum filament 2 uses the mode being circular layout, and is arranged on described double first surface 8 throwing silicon chip 1 so that heating platinum
Silk 2 meets round nozzle jet impulse and cools down axisymmetric fluidal texture and heat-transfer character, and described heating platinum filament 2 is divided into four to add
Hot cell, described four heating units use mode in parallel to be connected with heating power supply respectively, and the thickness of described heating platinum filament 2 is
200～500 nanometers, wherein heating platinum filament 2 is divided into four heating units, to reduce the heating voltage of each heating unit, real
The heating of the most more high heat flux, the resistance value of each heating power supply is identical, adds and hankers four heating unit parallel connections, thus
Realize double Uniform Heat density heating throwing silicon chip 1 first surface 8；Ground floor thermometric platinum filament 4 and second layer thermometric platinum filament 5 are
Annular thermometric platinum filament, described annular thermometric platinum filament is multiple, and multiple annular thermometric platinum filaments can be arranged in different radial positions
Multiple temperature measuring unit, to measure the temperature value of different radially position, and are connected with thermometric electrode, by thermometric by thermometric lead-in wire
Signal is delivered in signal pickup assembly；
In order to reduce the impact that the resistance versus temperature on thermometric lead-in wire and thermometric electrode is measured in the present invention, thermometric is gone between
Being set to thermometric platinum filament lead-in wire, thermometric electrode is thermometric platinum electrode, and evaporation has an aluminium lamination, to subtract on thermometric platinum filament lead-in wire
The impact that resistance versus temperature on little thermometric platinum filament lead-in wire is measured；In order to protect heating platinum filament 2 so that the generation of heating platinum filament 2
Heat be able to ensure that the first surface 8 from double throwing silicon chips 1 passes, heating platinum filament 2 surface evaporation have a SiO2Layer,
The temperature simultaneously obtained to ensure second layer thermometric platinum filament 5 to measure is the temperature on impact jet flow surface, at second layer thermometric platinum
The surface evaporation of silk 5 has a SiO2Layer, when heating platinum filament 2 or second layer thermometric platinum filament 5 are connected with external circuit, by dry
Method etching removes the SiO in heating platinum filament 2 electrode and thermometric platinum electrode2Layer and polyimide layer 6, with external circuit phase
Even.
Embodiment 3:
Present invention also offers a kind of temperature field, the preparation method of heat flow density field measurement integrated apparatus, including following
Step:
Double throwing silicon chips 1 are carried out high-temperature thermal oxidation with its surface formed oxide layer, described oxide layer play electric insulation make
With；
The annular-heating platinum filament that thickness is 200～500 nanometers is sputtered on silicon chip 1 first surface 8 in described double throwing；
The SiO that a layer thickness is 200～500 nanometers is deposited on the surface of annular-heating platinum filament2Thin film；
The method utilizing dry etching removes the SiO of deposition in heating platinum electrode2；
The ground floor thermometric platinum filament 4 that a layer thickness is 30～60 nanometers, institute is sputtered on the second surface 9 of double throwing silicon chips 1
State ground floor thermometric platinum filament 4 by corresponding thermometric platinum filament lead-in wire and thermometric platinum electrode connect, described thermometric platinum electrode with
Signal pickup assembly is connected；
The second layer thermometric platinum filament 5 that thickness is 30～50 nanometers, institute it is provided with in the outside of described ground floor thermometric platinum filament 4
State second layer thermometric platinum filament 5 by corresponding thermometric platinum filament lead-in wire and thermometric platinum electrode connect, described thermometric platinum electrode with
Signal pickup assembly is connected；
One layer of aluminum is evaporated, to reduce lead resistance to temperature on described thermometric platinum filament lead-in wire and described thermometric platinum electrode
The impact measured；
Spin coating one strata acid imide between described ground floor thermometric platinum filament 4 and described second layer thermometric platinum filament 5；
The SiO that a layer thickness is 200～500 nanometers is deposited in the surface of described second thermometric platinum filament2Thin film；
The method utilizing dry etching removes the SiO of deposition in the thermometric platinum electrode of the second thermometric platinum filament2, complete to add
Work.
In this specification, each embodiment uses the mode gone forward one by one to describe, and what each embodiment stressed is and other
The difference of embodiment, between each embodiment, identical similar portion sees mutually.For system disclosed in embodiment
For, owing to it corresponds to the method disclosed in Example, so describe is fairly simple, relevant part sees method part and says
Bright.
The present invention applies specific case principle and the embodiment of the present invention are set forth, above example
Method and the core concept thereof being only intended to help to understand the present invention is described；Simultaneously for one of ordinary skill in the art, depend on
According to the thought of the present invention, the most all will change.In sum, this specification content
Should not be construed as limitation of the present invention.
Claims (10)
1. a temperature field, heat flow density field measurement integrated apparatus, it is characterised in that include double throw silicon chip, heating platinum filament, the
One layer of thermometric platinum filament and second layer thermometric platinum filament, described heating platinum filament is arranged on described double first surface throwing silicon chip, is used for
To described double heating throwing silicon chips, described ground floor thermometric platinum filament is arranged on described double second surface throwing silicon chip, and described the
Be disposed with polyimide layer and the top of the second thermometric platinum filament on one layer of thermometric platinum filament, described heating platinum filament by electrode with
External circuit is connected, and described ground floor thermometric platinum filament and second layer thermometric platinum filament are all by corresponding thermometric lead-in wire and thermometric electricity
Pole connects, and described thermometric electrode is connected with signal pickup assembly.
Temperature field the most according to claim 1, heat flow density field measurement integrated apparatus, it is characterised in that described double throwings
Silicon chip plays the oxide layer of insulating effect by thermal oxide in described double throwing silicon chip surfaces formation.
Temperature field the most according to claim 1, heat flow density field measurement integrated apparatus, it is characterised in that described heating
Platinum filament uses the mode being circular layout, and is arranged on described double first surface throwing silicon chip.
4. according to the temperature field described in claim 1 or 3, heat flow density field measurement integrated apparatus, it is characterised in that described in add
Hot platinum filament is divided into four heating units, described four heating units to use mode in parallel to be connected with heating power supply respectively.
5. according to the temperature field described in claim 1 or 3, heat flow density field measurement integrated apparatus, it is characterised in that described in add
The thickness of hot platinum filament is 200～500 nanometers.
Temperature field the most according to claim 1, heat flow density field measurement integrated apparatus, it is characterised in that described first
Layer thermometric platinum filament and second layer thermometric platinum filament are annular thermometric platinum filament, and described annular thermometric platinum filament is multiple.
Temperature field the most according to claim 1, heat flow density field measurement integrated apparatus, it is characterised in that described thermometric
Going between and go between for thermometric platinum filament, described thermometric electrode is thermometric platinum electrode, and the upper evaporation of described thermometric platinum filament lead-in wire has an aluminium lamination,
To reduce the impact that the resistance versus temperature on thermometric platinum filament lead-in wire is measured.
Temperature field the most according to claim 1, heat flow density field measurement integrated apparatus, it is characterised in that described heating
The surface evaporation of platinum filament and described second layer thermometric platinum filament has a SiO2Layer.
Temperature field the most according to claim 8, heat flow density field measurement integrated apparatus, it is characterised in that: described SiO2Layer
Thickness be 200～500 nanometers.
10. a temperature field, the preparation method of heat flow density field measurement integrated apparatus, it is characterised in that comprise the following steps:
Double throwing silicon chips are carried out high-temperature thermal oxidation with its surface formed oxide layer, described oxide layer plays electric insulation effect；
Sputter annular-heating platinum filament on silicon chip first surfaces in described double throwing, described annular-heating platinum filament thickness be preferably 200～
500 nanometers；
One layer of SiO is deposited on the surface of annular-heating platinum filament2Thin film, described SiO2Film thickness is preferably 200～500 nanometers；
The method utilizing dry etching removes the SiO of deposition in heating platinum electrode2；
Sputtering ground floor thermometric platinum filament on the second surface of double throwing silicon chips, described ground floor thermometric platinum filament passes through corresponding thermometric
Platinum filament lead-in wire and thermometric platinum electrode connect, and described thermometric platinum electrode is connected with signal acquisition circuit, and described ground floor is surveyed
Temperature platinum filament thickness is preferably 30～60 nanometers；
Be provided with second layer thermometric platinum filament in the outside of described ground floor thermometric platinum filament, described second layer thermometric platinum filament is by corresponding
Thermometric platinum filament lead-in wire and thermometric platinum electrode connect, described thermometric platinum electrode is connected with signal pickup assembly, described the
Two layers of thermometric platinum filament thickness are preferably 30～50 nanometers；
One layer of aluminum is evaporated, to reduce lead resistance to temperature survey on described thermometric platinum filament lead-in wire and described thermometric platinum electrode
Impact；
Spin coating one strata acid imide between described ground floor thermometric platinum filament and described second layer thermometric platinum filament；
One layer of SiO is deposited in the surface of described second thermometric platinum filament2Thin film, described SiO2Film thickness preferably 200～500 is received
Rice；
The method utilizing dry etching removes the SiO of deposition in the thermometric platinum electrode of the second thermometric platinum filament2, complete processing.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110167219A (en) * | 2019-05-28 | 2019-08-23 | 苏州工业园区服务外包职业学院 | A kind of device for simulating heat source and preparation method thereof |
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