CN112320754A - Online testing structure and method for line width of semiconductor conductive film - Google Patents

Online testing structure and method for line width of semiconductor conductive film Download PDF

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CN112320754A
CN112320754A CN202011168378.4A CN202011168378A CN112320754A CN 112320754 A CN112320754 A CN 112320754A CN 202011168378 A CN202011168378 A CN 202011168378A CN 112320754 A CN112320754 A CN 112320754A
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semiconductor
conductive film
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semiconductor conductive
film
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CN112320754B (en
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宋玉洁
周再发
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Southeast University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/004—Testing during manufacturing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

The invention discloses an online test structure and method for the line width of a semiconductor conductive film, wherein a round semiconductor film which is connected with one end side of the semiconductor conductive film to be tested into a whole is prepared, four contact electrodes are arranged on the peripheral side of the round semiconductor film, the opening angle of the contact electrodes is measured and calculated by adopting an improved four-point probe method, and the semiconductor square resistance of the semiconductor film is further obtained. And then applying voltage to the semiconductor conductive film to be tested, calculating the resistance value of the semiconductor conductive film by measuring the current between the two electrodes, and finally obtaining the width value of the line width of the semiconductor conductive film according to the relation between the resistance and the geometric dimension of the semiconductor conductive film to be tested. The test structure of the invention is completed by adopting a basic micro-electro-mechanical processing technology, and the processing process is synchronous with the micro-electro-mechanical device, thereby meeting the requirement of on-line test. In the test process, a simple direct current source is used as an excitation source, and all excitation and test processes can be completed only by adopting common voltage test equipment.

Description

Online testing structure and method for line width of semiconductor conductive film
Technical Field
The invention relates to an online testing structure and method for the line width of a semiconductor conductive film.
Background
The film linewidth of a microelectromechanical thin film device is an important parameter that affects the performance of the device. By measuring the line width of the film on line, the size of the device can be obtained, and the precision of the device can be controlled.
Semiconductors are important materials used in surface micromachining processes, and the basic processes of machining are as follows: a layer of material, referred to as a sacrificial layer, is first deposited on the silicon wafer. Then, the pattern layer is defined by photoetching, and a structural layer film is manufactured on the sacrificial layer by using a chemical vapor deposition method and the like. And finally, etching to remove the sacrificial layer to separate the movable part of the miniature part from the sacrificial layer to form the semiconductor film structure. The material of the sacrificial layer is usually a dielectric material, and the structural layer is a semiconductor material. Manufacturers of micro-electro-mechanical products want to be able to monitor the line width of the semiconductor conductive film on line and reflect the process error in the manufacturing process in real time. Therefore, on-line testing of microelectromechanical products without leaving the processing environment and with convenient equipment becomes an essential means of controlling the process.
Disclosure of Invention
The purpose of the invention is as follows: in view of the above prior art, an online testing structure and method for the line width of a semiconductor conductive film are provided.
The technical scheme is as follows: an on-line test method for the line width of the semiconductor conducting film features that in Cartesian coordinate system, the semiconductor conducting film to be tested on the surface of flat dielectric layer is parallel to the x-axis direction and its effective length is L1The width is W; the method comprises the following steps:
step 1: preparing a round semiconductor film on one end side of a semiconductor conductive film to be detected, wherein the round semiconductor film and the semiconductor conductive film to be detected are connected into an integral structure;
step 2: respectively manufacturing two anchor areas at intervals on the insulating substrate on two sides of the semiconductor conductive film to be tested along the x-axis direction;
and step 3: respectively preparing metal electrodes connected with the semiconductor conductive film to be tested in the anchor area;
and 4, step 4: sequentially preparing first to fourth contact electrodes at intervals along the circumference of the circular semiconductor film, wherein the opening angle of the connection between the first to fourth contact electrodes and the circular semiconductor film is alpha;
and 5: measuring the square resistance R of the round semiconductor film by using the first to the fourth contact electrodes and adopting an improved four-point probe methodsq；
Step 6: applying constant current to the two metal electrodes on the same side of the semiconductor conductive film to be tested along the x-axis direction, measuring the voltage between the two metal electrodes on the other side, wherein the ratio of the voltage to the current is a resistor RA；
And 7: calculating the width of the semiconductor conductive film to be detected according to the following formula:
Figure BDA0002746502610000021
further, the step 5 comprises the following specific steps:
step 501: applying constant current between the first contact electrode and the fourth contact electrode, measuring the voltage between the first contact electrode and the fourth contact electrode, wherein the ratio of the voltage to the current is a resistor Ra；
Step 502: applying constant current between the first contact electrode and the fourth contact electrode, measuring the voltage between the second contact electrode and the fourth contact electrode, wherein the ratio of the voltage to the current is resistance Rb；
Step 503: calculating the sheet resistance R of the semiconductor according to the following formulasq：
Figure BDA0002746502610000022
In the formula, i is an imaginary unit, P, Q, S, T is an intermediate quantity, and specifically:
Figure BDA0002746502610000023
Figure BDA0002746502610000024
Figure BDA0002746502610000025
Figure BDA0002746502610000026
wherein, K [. C]Is a first type of complete elliptic integral function; r obtained by measurementaAnd RbSubstituting the following equation to solve for α:
Ra/Rb＝ga(α)/gb(α)
wherein:
Figure BDA0002746502610000031
an online test structure of the line width of a semiconductor conductive film comprises a semiconductor conductive film to be tested, four metal electrodes, a round semiconductor film and first to fourth contact electrodes; the semiconductor conductive film to be tested is positioned on the surface of the flat dielectric layer; the four metal electrodes are arranged on the anchor areas at two sides of the semiconductor conductive film to be tested along the length direction at intervals, and the metal electrodes are electrically connected with the semiconductor conductive film to be tested; the round semiconductor film is arranged at one end side of the semiconductor conductive film to be detected and is connected with the semiconductor conductive film to be detected into an integral structure; the first to fourth contact electrodes are uniformly arranged on the peripheral side of the circular semiconductor film, and the opening angle connected with the circular semiconductor film is alpha.
Further, the anchor region is disposed on the insulating substrate.
Further, the opening angle alpha is 30-45 degrees.
Has the advantages that: the test structure of the invention is completed by adopting a basic micro-electro-mechanical processing technology, the processing process is synchronous with a micro-electro-mechanical device, no special processing requirement exists, and the test structure completely meets the requirement of on-line test. In the test process, a simple direct current source is used as an excitation source, and all excitation and test processes can be completed only by adopting common voltage test equipment. The requirement on test equipment is low, and the test process and the test parameter values are stable.
Drawings
Fig. 1 is a schematic diagram of an online measurement structure of a line width of a semiconductor conductive film according to the present invention.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in fig. 1, an on-line measuring structure of a semiconductor conductive film line width includes a semiconductor conductive film 101 to be measured, four metal electrodes 103, a circular semiconductor film 201, and first to fourth contact electrodes 201 to 205. The semiconductor conductive film 101 to be tested is positioned on the surface of the flat dielectric layer, the four metal electrodes 103 are arranged on the anchor areas 102 on two sides of the semiconductor conductive film 101 to be tested along the length direction at intervals, the anchor areas 102 are arranged on the insulating substrate, and the metal electrodes 103 are electrically connected with the semiconductor conductive film 101 to be tested. The circular semiconductor film 201 is arranged on one end side of the semiconductor conductive film 101 to be tested and is connected with the semiconductor conductive film 101 to be tested into a whole structure. The first to fourth contact electrodes 201 to 205 are uniformly arranged on the peripheral side of the circular semiconductor film 201, the opening angle of the connection with the circular semiconductor film 201 is alpha, and the size of alpha is more than or equal to 30 degrees and less than or equal to 45 degrees.
An on-line measuring method for the line width of semiconductor conducting film features that in Cartesian coordinate system, the semiconductor conducting film 101 to be measured on the surface of flat dielectric layer is parallel to the x-axis direction and its effective length is L1The width is W; the method comprises the following steps:
step 1: a circular semiconductor film 201 is prepared on one end side of the semiconductor conductive film 101 to be tested, and the circular semiconductor film 201 and the semiconductor conductive film 101 to be tested are connected into an integral structure.
Step 2: two anchor regions 102 are respectively manufactured on the insulating substrate at intervals on two sides of the semiconductor conductive film 101 to be tested along the x-axis direction.
And step 3: metal electrodes 103 connected to the semiconductor conductive film 101 to be tested are respectively prepared in the anchor regions 102.
And 4, step 4: first to fourth contact electrodes 201 to 205 are sequentially prepared at intervals along the circumference of the circular semiconductor film 201, and the opening angle of the connection between the first to fourth contact electrodes 201 to 205 and the circular semiconductor film 201 is alpha.
And 5: measuring the square resistance R of the round semiconductor film 201 by using the first to fourth contact electrodes 201 to 205 and adopting a four-point probe methodsqThe method comprises the following specific steps:
step 501: applying a constant current between the first contact electrode 201 and the fourth contact electrode 204, measuring the voltage between the first contact electrode 201 and the fourth contact electrode 204, the ratio of the voltage to the current being the resistance Ra；
Step 502: applying a constant current between the first contact electrode 201 and the fourth contact electrode 204, measuring the voltage between the second contact electrode 202 and the fourth contact electrode 204, the ratio of the voltage to the current being the resistance Rb；
Step 503: by defining the square resistance, the resistance R can be obtainedaAnd RbExpression (c):
Figure BDA0002746502610000041
Rsqis a semiconductor sheet resistance ga(. alpha.) and gb(α) is a function related only to the opening angle α of the contact electrode, and g can be obtained by mapping the circular semiconductor thin film structure to a simple structurea(. alpha.) and gbThe expression of (α) is as follows:
Figure BDA0002746502610000042
in the formula, i is an imaginary unit, P, Q, S, T is an intermediate quantity, and specifically:
Figure BDA0002746502610000051
Figure BDA0002746502610000052
Figure BDA0002746502610000053
Figure BDA0002746502610000054
wherein K [. cndot. ] is a first class elliptic integral function;
r obtained by measurementaAnd RbSubstituting formula (2) for α according to the following formula:
Ra/Rb＝ga(α)/gb(α) (3)
then substituting the obtained alpha into the following formula to calculate the square resistance R of the semiconductorsq：
Figure BDA0002746502610000055
Step 6: applying constant current to the two metal electrodes 103 on the same side of the semiconductor conductive film 101 to be measured along the x-axis direction, measuring the voltage between the two metal electrodes 103 on the other side, wherein the ratio of the voltage to the current is a resistance RA。
And 7: calculating the width of the semiconductor conductive film 101 to be tested according to the following formula according to the relation between the resistance and the geometric dimension of the semiconductor conductive film to be tested:
Figure BDA0002746502610000056
the fabrication of the test structure is described below in terms of a typical two-layer semiconductor micro-electromechanical surface fabrication process.
An N-type semiconductor silicon wafer is selected, a silicon dioxide layer with the thickness of 100 nanometers is thermally grown, a silicon nitride layer with the thickness of 500 nanometers is deposited through a low-pressure chemical vapor deposition process, and an insulating substrate is formed. A layer of 300 nm semiconductor is deposited by a low pressure chemical vapor deposition process and is heavily doped N-type to make the layer of semiconductor a conductor, and a portion of the anchor region 102 is formed by etching through a photolithography process. A dielectric layer of 2000 nm thickness is deposited using a low pressure chemical vapor deposition process and the anchor region 102 is patterned by a photolithographic process. Depositing a layer of semiconductor with the thickness of 1500 nanometers by using a low-pressure chemical vapor deposition process, carrying out N-type heavy doping on the semiconductor, and forming a semiconductor test structure pattern 101 and an anchor region 102 by using a photoetching process, wherein the thickness of the anchor region is the sum of the thicknesses of the two semiconductors. A pattern of metal electrodes 103 is formed on the anchor region 102 by a lift-off process, and finally the structure is released by etching the dielectric layer.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (5)

1. The method for on-line testing the line width of the semiconductor conductive film is characterized in that in a Cartesian coordinate system, the semiconductor conductive film (101) to be tested on the surface of a flat dielectric layer is parallel to the direction of an x axis, and the effective length is L1The width is W; the method comprises the following steps:
step 1: preparing a round semiconductor film (201) at one end side of a semiconductor conductive film (101) to be tested, wherein the round semiconductor film (201) and the semiconductor conductive film (101) to be tested are connected into an integral structure;
step 2: respectively manufacturing two anchor regions (102) at intervals on the insulating substrate on two sides of the semiconductor conductive film (101) to be tested along the x-axis direction;
and step 3: respectively preparing metal electrodes (103) connected with the semiconductor conductive film (101) to be tested in the anchor area (102);
and 4, step 4: sequentially preparing first to fourth contact electrodes (201-205) at intervals along the circumference on the circumferential side of the circular semiconductor thin film (201), wherein the opening angle of the connection between the first to fourth contact electrodes (201-205) and the circular semiconductor thin film (201) is alpha;
and 5: by using said firstFirst to fourth contact electrodes (201-205) for measuring the square resistance R of the circular semiconductor film (201) by improved four-point probe methodsq；
Step 6: applying constant current to the two metal electrodes (103) on the same side of the semiconductor conductive film (101) to be tested along the x-axis direction, measuring the voltage between the two metal electrodes (103) on the other side, wherein the ratio of the voltage to the current is a resistance RA；
And 7: calculating the width of the semiconductor conductive film (101) to be tested according to the following formula:
Figure FDA0002746502600000011
2. the method for on-line testing the line width of the semiconductor conductive film according to claim 1, wherein the step 5 comprises the following specific steps:
step 501: applying a constant current between the first contact electrode (201) and the fourth contact electrode (204), measuring the voltage between the first contact electrode (201) and the fourth contact electrode (204), the ratio of the voltage to the current being the resistance Ra；
Step 502: applying a constant current between the first contact electrode (201) and the fourth contact electrode (204), measuring the voltage between the second contact electrode (202) and the fourth contact electrode (204), the ratio of the voltage to the current being the resistance Rb；
Step 503: calculating the sheet resistance R of the semiconductor according to the following formulasq：
Figure FDA0002746502600000021
In the formula, i is an imaginary unit, P, Q, S, T is an intermediate quantity, and specifically:
Figure FDA0002746502600000022
Figure FDA0002746502600000023
Figure FDA0002746502600000024
Figure FDA0002746502600000025
wherein, K [. C]Is a first type of complete elliptic integral function; r obtained by measurementaAnd RbSubstituting the following equation to solve for α:
Ra/Rb＝ga(α)/gb(α)
wherein:
Figure FDA0002746502600000026
3. an online test structure of a semiconductor conductive film line width is characterized by comprising a semiconductor conductive film (101) to be tested, four metal electrodes (103), a circular semiconductor film (201) and first to fourth contact electrodes (201-205); the semiconductor conductive film (101) to be tested is positioned on the surface of the flat medium layer; the four metal electrodes (103) are arranged on the anchor areas (102) on two sides of the to-be-tested semiconductor conductive film (101) along the length direction at intervals in pairs, and the metal electrodes (103) are electrically connected with the to-be-tested semiconductor conductive film (101); the round semiconductor film (201) is arranged at one end side of the semiconductor conductive film (101) to be tested and is connected with the semiconductor conductive film (101) to be tested into an integral structure; the first to fourth contact electrodes (201-205) are uniformly arranged on the peripheral side of the circular semiconductor film (201), and the opening angle connected with the circular semiconductor film (201) is alpha.
4. The semiconductor conductive thin film line width in-line test structure as claimed in claim 3, wherein the anchor region (102) is disposed on an insulating substrate.
5. The structure for on-line testing of line width of semiconductor conductive thin film according to claim 3, wherein the opening angle α is in a range of 30 ° to 45 °.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022205726A1 (en) * 2021-03-29 2022-10-06 长鑫存储技术有限公司 Alignment error test method, adjustment method, test system, and storage medium
WO2022268039A1 (en) * 2021-06-23 2022-12-29 东南大学 Online thickness measurement structure for semiconductor conductive thin film and measurement method thereof
CN116466221A (en) * 2023-05-06 2023-07-21 法特迪精密科技（苏州）有限公司 Switching probe testing device
US11935797B2 (en) 2021-03-29 2024-03-19 Changxin Memory Technologies, Inc. Test method, adjustment method, test system, and storage medium for alignment error

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KR101267469B1 (en) * 2012-12-26 2013-05-31 (주)센서시스템기술 Pressure sensor
CN104390580A (en) * 2014-12-04 2015-03-04 上海集成电路研发中心有限公司 Metal film film-thickness measuring system and method of measuring film-thickness by adopting system

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW379398B (en) * 1997-06-28 2000-01-11 Hyundai Electronics Ind Measuring-pattern and measuring method for width of wire in semiconductor device
US6297517B1 (en) * 2000-02-28 2001-10-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of fabricating the same
US20100315108A1 (en) * 2009-06-15 2010-12-16 Stmicroelectronics (Rousset) Sas Device for detecting the thinning down of the substrate of an integrated circuit chip
KR101267469B1 (en) * 2012-12-26 2013-05-31 (주)센서시스템기술 Pressure sensor
CN104390580A (en) * 2014-12-04 2015-03-04 上海集成电路研发中心有限公司 Metal film film-thickness measuring system and method of measuring film-thickness by adopting system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022205726A1 (en) * 2021-03-29 2022-10-06 长鑫存储技术有限公司 Alignment error test method, adjustment method, test system, and storage medium
US11935797B2 (en) 2021-03-29 2024-03-19 Changxin Memory Technologies, Inc. Test method, adjustment method, test system, and storage medium for alignment error
WO2022268039A1 (en) * 2021-06-23 2022-12-29 东南大学 Online thickness measurement structure for semiconductor conductive thin film and measurement method thereof
CN116466221A (en) * 2023-05-06 2023-07-21 法特迪精密科技（苏州）有限公司 Switching probe testing device
CN116466221B (en) * 2023-05-06 2024-03-19 苏州法特迪科技股份有限公司 Switching probe testing device

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