CN118185476A - 一种抛光组合物及其用途 - Google Patents
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- 238000005498 polishing Methods 0.000 title claims abstract description 63
- 239000000203 mixture Substances 0.000 title claims abstract description 24
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 19
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 13
- 229920006317 cationic polymer Polymers 0.000 claims abstract description 7
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 5
- 229920000289 Polyquaternium Polymers 0.000 claims description 12
- 239000002202 Polyethylene glycol Substances 0.000 claims description 10
- 229920001223 polyethylene glycol Polymers 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229920006318 anionic polymer Polymers 0.000 claims description 6
- -1 phosphate compound Chemical class 0.000 claims description 6
- 229910019142 PO4 Inorganic materials 0.000 claims description 5
- 150000007942 carboxylates Chemical class 0.000 claims description 5
- 239000010452 phosphate Substances 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Substances OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 5
- 229920000058 polyacrylate Polymers 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 4
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 229920002553 poly(2-methacrylolyloxyethyltrimethylammonium chloride) polymer Polymers 0.000 claims description 3
- 229920000691 Poly[bis(2-chloroethyl) ether-alt-1,3-bis[3-(dimethylamino)propyl]urea] Polymers 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- PQRGRTZAMUILIP-UHFFFAOYSA-L dipotassium;[hydroxy-[hydroxy(oxido)phosphoryl]oxyphosphoryl] hydrogen phosphate Chemical compound [K+].[K+].OP([O-])(=O)OP(O)(=O)OP(O)([O-])=O PQRGRTZAMUILIP-UHFFFAOYSA-L 0.000 claims description 2
- 229910000160 potassium phosphate Inorganic materials 0.000 claims description 2
- 235000011009 potassium phosphates Nutrition 0.000 claims description 2
- 241000255777 Lepidoptera Species 0.000 abstract 1
- 125000000129 anionic group Chemical group 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 6
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 238000009210 therapy by ultrasound Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229920000805 Polyaspartic acid Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 108010064470 polyaspartate Proteins 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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Abstract
本发明提供了一种抛光组合物，包括：氧化铈研磨颗粒，阴离子型表面活性剂，阳离子型聚合物和非离子型表面活性剂。本发明提供的抛光组合物，具有较好的稳定性，易于保存以及实际使用；并且可以通过调节添加不同的阴离子分子，从而达到控制不同蝶形大小的目的，从而满足不同结构的应用要求。
Description
技术领域
本发明涉及化学机械抛光领域，尤其涉及一种抛光组合物及其用途。
背景技术
在制备芯片的过程中，浅沟槽隔离结构(STI)是最常见的一种，一般使用氮化硅和多晶硅作为停止层。需要在抛光的过程能快速的去除表面的氧化层，但氮化硅或者多晶硅层暴露出来后，能够保护住氮化硅或者多晶硅层，也就是说抛光液对于停止层几乎没有抛光速率。对于传统的STI的应用，需要尽量小的蝶形，以保证足够的过抛时间。但随着目前集成电路的设计趋于复杂以及多层结构，要求抛光液能够满足对不同的蝶形(dishing)大小的要求。例如，有一些新的设计结构，需要达到很高的碟形以满足后续的加工需要，为了满足这一需求，高的碟形的抛光液需求越来越多。
因此，本领域亟需一种能够有效调控抛光后晶圆表面碟形大小的抛光液，以满足不同的抛光需求。
发明内容
为了解决抛光后晶圆表面具有不同高低碟形的技术问题，本发明提供一种能够用于抛光氧化硅的抛光组合物，可以有效减少抛光后晶圆的表面形貌和抛光效果。
具体的，本发明提供一种抛光组合物，包括：
氧化铈研磨颗粒，阳离子型聚合物，阴离子型表面活性剂和非离子型表面活性剂。
优选的，所述氧化铈研磨颗粒为胶体氧化铈颗粒。
优选的，所述阴离子型表面活性剂选自磷酸化合物或羧酸根阴离子聚合物。
优选的，所述磷酸化合物选自磷酸、磷酸钾，三磷酸氢二钾，氨基三甲叉膦酸中的一种或多种。
优选的，所述阴离子型聚合物为聚丙烯酸铵盐及其共聚物。
优选的，所述阳离子型聚合物为聚季铵盐。
优选的，所述阳离子型聚合物选自聚季铵盐2，聚季铵盐6，聚季铵盐7，聚季铵盐28，聚季铵盐37中的一种或多种。
优选的，所述非离子型表面活性剂为分子量小于10000的聚乙二醇。
优选的，所述抛光组合物的pH值为2-7.
本发明的另一方面，提供一种将以上任一所述的抛光组合物用于抛光氧化硅的用途。
与现有技术相比，本发明中的抛光组合物具有以下有益效果：
1.具有较稳定的抛光效果，易于抛光液的保存以及实际使用；
2.将本发明中的抛光组合物用于抛光图形晶圆时，可以通过调节添加不同的阴离子型表面活性剂，其中，在使用磷酸化合物作为阴离子型表面活性剂时，可以控制抛光得到较大的碟形，在使用羧酸根阴离子聚合物作为阴离子型表面活性剂时，可以控制得到较小的碟形；由此可以实现控制不同蝶形大小的目的，从而满足不同结构的实际应用要求。
具体实施方式
以下结合具体实施例进一步阐述本发明的优点。
实施例1
将1kg氧化铈颗粒，40g聚丙烯酸铵盐和8740g去离子水混合后，搅拌超声30分钟分散。随后加入220g聚季铵盐7，随后稀释至0.2％氧化铈含量，然后添加1000ppm聚乙二醇(分子量1万)，使用硝酸调节pH至4.8。
实施例2
将1kg氧化铈颗粒，60g聚天冬氨酸和8720g去离子水混合后，搅拌超声30分钟分散。随后加入220g聚季铵盐37，随后稀释至0.2％氧化铈含量，然后添加1000ppm聚乙二醇(分子量1万)，使用硝酸调节pH至4.8。
实施例3
将1kg氧化铈颗粒，60g磷酸氢二钾和8720g去离子水混合后，搅拌超声30分钟分散。随后加入220g聚季铵盐7，随后稀释至0.2％氧化铈含量，然后添加1000ppm聚乙二醇(分子量1万)，使用硝酸调节pH至4.8.
实施例4
将1kg氧化铈颗粒，30g氨基三甲叉膦酸和8750g去离子水混合后，搅拌超声30分钟分散。随后加入220g聚季铵盐7，随后稀释至0.2％氧化铈含量，然后添加1000ppm聚乙二醇(分子量1万)，使用硝酸调节pH至4.8.
对比例1
将1kg氧化铈颗粒，稀释至0.2％氧化铈含量，然后添加1000ppm聚乙二醇(分子量1万)，使用硝酸调节pH至4.8。
对比例2
将1kg氧化铈颗粒，40g聚丙烯酸铵盐和8740g去离子水混合后，搅拌超声30分钟分散。随后加入220g聚季铵盐7，随后稀释至0.2％氧化铈含量，然后添加1000ppm聚乙二醇(分子量1万)，使用硝酸调节pH至9.0。
抛光对象：TEOS空白晶圆和图形晶圆(沉积了不同线/槽结构的TEOS膜)，图形TEOS测量线宽/槽宽为100um/100um。
抛光仪器：Mirra抛光机台；IC1010抛光垫；NanoSpec膜厚测量系统(NanoSpec6100-300,Shanghai Nanospec Technology Corporation)。
抛光条件：Platten和Carrier转速分别为93rpm和87rpm，抛光压力3.0psi，抛光液流速为150mL/min。
抛光步骤：分别使用上述制得的抛光液对TEOS空白晶圆和图形晶圆采用上述抛光仪器和抛光条件，进行抛光处理。从晶圆边缘3mm开始，在直径线上以同等间距测49个点，分别测试其抛光速率，因此，每种抛光液的抛光速率是49点上的抛光速率的平均值。测得抛光结果如表1所示。注：对比例2的抛光组合物在调节pH值时即产生沉淀，无法进行进一步的测试，故表1中并未示出对比例2的测试结果。
表1实施例1-4及对比例1的各组分及含量、测试结果
表1结果可以看出，实施例1-4表明在加入相应的阴离子型表面活性剂和聚乙二醇后，依然能够保持足够的抛光速率，同时能够很好的抑制多晶硅。在使用相同浓度的聚乙二醇时，通过使用不同种类的阴离子型表面活性剂可以有效的调节蝶形的大小以满足不同的应用场景，具体而言，当抛光需要较大的碟形时，选用磷酸化合物作为阴离子型表面活性剂，当抛光需要较小的碟形时，选用羧酸根阴离子聚合物作为阴离子型表面活性剂。同时，无论添加哪种阴离子型表面活性剂，均能够有效提高抛光组合物对二氧化硅的抛光速率，同时降低对多晶硅的抛光速率。
综合上述，使用本申请中所限定的阴离子表面活性剂和多晶硅抑制剂，能够有效提高抛光速率，保证氧化硅的抛光速率，停止在多晶硅上，并且能够大幅度的调节蝶形的大小，从而可以灵活的应用在不同的结构要求中。
应当注意的是，本发明的实施例有较佳的实施性，且并非对本发明作任何形式的限制，任何熟悉该领域的技术人员可能利用上述揭示的技术内容变更或修饰为等同的有效实施例，但凡未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何修改或等同变化及修饰，均仍属于本发明技术方案的范围内。
Claims (10)
1.一种抛光组合物，其特征在于，包括：
氧化铈研磨颗粒，阳离子型聚合物，阴离子型表面活性剂和非离子型表面活性剂。
2.如权利要求1所述的抛光组合物，其特征在于，
所述氧化铈研磨颗粒为胶体氧化铈颗粒。
3.如权利要求1所述的抛光组合物，其特征在于，
所述阴离子型表面活性剂选自磷酸化合物或羧酸根阴离子聚合物。
4.如权利要求3所述的抛光组合物，其特征在于，
所述磷酸化合物选自磷酸、磷酸钾，三磷酸氢二钾，氨基三甲叉膦酸中的一种或多种。
5.如权利要求3所述的抛光组合物，其特征在于，
所述羧酸根阴离子聚合物为聚丙烯酸铵盐及其共聚物。
6.如权利要求1所述的抛光组合物，其特征在于，
所述阳离子型聚合物为聚季铵盐。
7.如权利要求6所述的抛光组合物，其特征在于，
所述阳离子型聚合物选自聚季铵盐2，聚季铵盐6，聚季铵盐7，聚季铵盐28，聚季铵盐37中的一种或多种。
8.如权利要求1所述的抛光组合物，其特征在于，
所述非离子型表面活性剂为分子量小于10000的聚乙二醇。
9.如权利要求1所述的抛光组合物，其特征在于，
所述抛光组合物的pH值为2-7。
10.一种将权利要求1-9中任一所述的抛光组合物用于抛光氧化硅的用途。
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| CN202211595027.0A CN118185476A (zh) | 2022-12-13 | 2022-12-13 | 一种抛光组合物及其用途 |
| TW112148275A TW202424133A (zh) | 2022-12-13 | 2023-12-12 | 拋光组合物及其用途 |
| PCT/CN2023/138015 WO2024125476A1 (zh) | 2022-12-13 | 2023-12-12 | 一种抛光组合物及其用途 |
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| CN102108260B (zh) * | 2009-12-25 | 2015-05-27 | 安集微电子（上海）有限公司 | 一种用于多晶硅抛光的化学机械抛光液 |
| CN104726028A (zh) * | 2013-12-18 | 2015-06-24 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其使用方法 |
| KR102426197B1 (ko) * | 2017-11-30 | 2022-07-29 | 솔브레인 주식회사 | 산화세륨 입자의 제조방법, 산화세륨 입자 및 이를 포함하는 연마용 슬러리 조성물 |
| KR20200057374A (ko) * | 2018-11-16 | 2020-05-26 | 주식회사 케이씨텍 | 연마 슬러리 조성물 및 그의 제조방법 |
| CN113004797B (zh) * | 2019-12-19 | 2024-04-12 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN116333599A (zh) * | 2021-12-23 | 2023-06-27 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液及其使用方法 |
-
2022
- 2022-12-13 CN CN202211595027.0A patent/CN118185476A/zh active Pending
-
2023
- 2023-12-12 WO PCT/CN2023/138015 patent/WO2024125476A1/zh unknown
- 2023-12-12 TW TW112148275A patent/TW202424133A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202424133A (zh) | 2024-06-16 |
| WO2024125476A1 (zh) | 2024-06-20 |
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