CN1181831A - 多道磁头 - Google Patents
多道磁头 Download PDFInfo
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- CN1181831A CN1181831A CN97190169A CN97190169A CN1181831A CN 1181831 A CN1181831 A CN 1181831A CN 97190169 A CN97190169 A CN 97190169A CN 97190169 A CN97190169 A CN 97190169A CN 1181831 A CN1181831 A CN 1181831A
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
磁头提供具有磁记录介质相对于磁头可作移动的纵向方向(L)和横向地定向于纵向方向的横向方向(W)的磁头面(21)。该磁头也包括基本上横向地延伸到纵向方向和横向方向并每一个具有至少一个传感缝隙(27a、27b)的组合并置的磁头单元(25a,25b)的结构。为了实现高磁道密度,每隔一个相邻磁头单元的一个磁头单元的一个传感缝隙和另一个磁头单元的一个传感缝隙位于基本上定向于纵向方向的互不相同的平面(P1、P2)上。
Description
本发明涉及一种磁头,该磁头提供具有磁记录介质相对于磁头可作相对移动的纵向方向和横向地定向于纵向方向的横向方向的磁头面,并还提供终接于磁头面的传感缝隙。
这种类型的磁头由NL-A 8902884(PHN13.144)所公知。采用薄膜技术制造的已知磁头设有共同的、空间隔离的传感缝隙,特别是写入缝隙。该写入缝隙受基片和磁通导向件限制,基片和磁通导向件延伸在磁头面内。在基片和磁通导向件之间延伸的一个面设有导电写入线圈。以磁头面的纵向方向观察,这些线圈具有端部,这些端部出现在磁通导向件之间并连接导电供给磁迹。
虽然记录介质上的窄磁迹可用已知磁头写入,但在写入期间可实现的磁迹密度因用于写入缝隙的构形受到限制。由于写入缝隙是间隔的,在写入期间形成间隔的记录磁迹,因此,已知磁头有一个有限磁道密度。
本发明的目的是提供一种在公开章节中已描述的具有高磁道密度的磁头。
根据本发明的磁头,其特征在于,设有一个具有基本上横向地延伸到纵向方向和横向方向的和每个具有至少一个传感元件和一个传感缝隙的组合并置的磁头单元的结构,同时两个相邻磁头单元(优选地,每隔一个相邻磁头单元)的至少一个磁头单元的一个传感缝隙和至少另一个磁头单元的一个传感缝隙出现在基本上横向地定向于纵向方向的互不相同的平面上,该传感缝隙延伸在基本上横向地定位于横向方向的一个平面的不同两侧。在根据本发明的磁头中,磁头单元,优选地所有磁头单元相互直接连接,以致于可实现100%的磁道密度。该磁头的优点在于,在电感传感元件的情况下,相当窄的磁迹能以精确相邻的方法写在诸如非预先形成的磁带之类的记录介质上,或在磁阻传感元件的情况下,并排延伸的相当窄的磁迹能被读出。
由于在记录介质上写入记录磁迹而没有任何间隙,所以,可有效地使用记录介质的可用表面。
根据本发明的磁头中,给定总的磁头宽度,可产生最大的传感缝隙数目。因此,就能实现最大的数据率。
当这样写入的记录介质正被读出时,磁头位置控制能被使用,其中所需的伺服信息可以插入数据磁迹。由于相邻磁迹精确地并行延伸,不太严格的要求就可利用所使用的机械控制的精度。在读出期间使用电子系统而不是机械伺服系统,其中根据本发明的磁头的系统使用读出磁迹宽度至少是所用的写入磁迹宽度的一半。
本发明的磁头的实施例,其特征在于,两个相邻磁头单元的至少一个磁头单元的一个传感缝隙和至少另一个磁头单元的一个传感缝隙连接基本上横向地定向于横向方向的相同平面。利用该实施例,可以实现使记录介质上的磁迹之间的有效间隔减至最小。
本发明的磁头的实施例,其特征在于,两个相邻磁头单元的传感缝隙出现在互不相同的平面上,而每一个都延伸在终接于磁头面的导磁单个磁极之间。
根据本发明的磁头的实施例,其特征在于,两个相邻磁头单元的传感缝隙出现在互不相同的平面上,每一个都延伸在终接于磁头面的导磁的公共磁极和终接磁头面的单个磁极之间。在该实施例中,相邻磁头单元公用一个磁极,也称为磁通导向磁极,而相邻磁头单元的单个磁极交替地出现在相关磁极的一侧或另一侧。
本发明的磁头的实施例其特征在于,两个相邻磁头单元的单个磁极连接横向地定向于横向方向的相同平面。利用该实施例,可以实现使记录介质上的磁迹之间的有效间隔减至最小,以致于在记录时最大磁迹密度是可能的。
本发明的磁头的实施例其特征在于,该结构是一个具有各层基本上横向地延伸到磁头面的多层结构,而两个相邻磁头单元的至少一个磁头单元的一个传感缝隙和至少另一个磁头单元的一个传感缝隙出现在互不相同的层上。所述的结构可以通过已知层技术,尤其是薄膜技术来制造。
本发明的磁头的实施例其特征在于,设有一个导电体,该导电体位于横向地定向于磁头面的纵向方向的平面上并通过至少多个磁头单元延伸,具有分支的导体接近至少多个相关磁头单元,用于形成单个电感元件。具有分支的导电体可用已知技术的方法来实现。
本发明的磁头的实施例其特征在于,用于形成单个电感元件的线圈提供在至少多个单个磁极的周围。
按照其用途,根据本发明的磁头可实施为机械读磁头、写磁头或读/写磁头,并适用于视频、数据、音频或多媒体用途。
本发明也涉及一种使用读和/或写磁头的磁头,用于在磁记录介质,例如磁带或磁盘上存储信息,和/或从磁记录介质上读出信息的装置。
本发明的装置设有根据本发明的磁头和还设有用于使磁头相对于记录介质移动的设备。该磁头可以是用于读出信息的磁阻磁头,或可以是用于读出和/或写入信息的电感磁头。
通过后面所描述的实施例,本发明的这些和其它方面将是显而易见的。
图1表示本发明用于把信号写入带状记录介质的装置,
图2A是本发明的磁头的第一实施例的正视示意图,
图2B是取磁头的第一实施例的剖线IIB-IIB的示意剖视图,
图2C是取第一实施例的剖线IIC-IIC的示意剖视图,
图2D是第一实施例的示意平面图,
图3A是本发明的磁头的第二实施例的示意正视图,
图3B是取磁头的第二实施例的剖线IIIB-IIIB的示意剖视图,
图3C是取第二实施例的剖线IIIC-IIIC的示意剖视图,
图3D是第二实施例的示意平面图,
图4A是本发明的磁头的第三实施例的示意正视图,
图4B是取第三实施例的剖线IVB-IVB的示意剖视图,
图4C是取第三实施例剖线IVC-IVC的示意剖视图,
图5A是本发明的磁头的第四实施例的示意正视图,
图5B是取第四实施例的剖线VB-VB的示意剖视图,
图5C是取第四实施例的剖线VC-VC的示意剖视图,
图6A是第五实施例的示意正视图,
图6B是取第五实施例的剖线VIB-VIB的示意剖视图,
图6C是取第五实施例的剖线VIC-VIC的示意剖视图,
图7A是第六实施例的示意正视图,
图7B是取第六实施例的剖线VIIB-VIIB的示意剖视图,
图7C是取第六实施例的剖线VIIC-VIIC的示意剖视图。
图1所示的装置是适合于与磁带盒3相配合的磁带装置1。磁带盒3设有适用于存储信息的磁带。装置1设有用于接受磁带盒3的夹持器7,与磁带盒3构成磁带系统。装置1设有两个卷轴9和10,用于与磁带盒3的卷盘相配合。在使用期间,该磁带沿着根据本发明用在装置1的磁头11移动。为此目的,装置1设有两个主轴13和14,和设有与主轴配合的两个压带轮15和16。磁头11,在本实施例中的写磁头,用于在磁带上同时写入多个并行磁迹。此外,或者该装置可设有代替写磁头的读磁头。
本发明的磁头是图2A、2B、2C和2D所示的写磁头,该磁头是一种薄膜磁头。该磁头具有一个磁头面21,用于与磁记录介质20,例如磁带相配合,该磁带在箭头L所示的方向上相对于磁头移动。方向L对应于具有横向地延伸到纵向方向的横向方向W的磁头面21的纵向方向。
该磁头包括,例如,Al2O3/TiC之类的陶瓷材料的非磁性基片23,在其上通过已知技术,特别是光刻技术形成多层结构。该结构具有多个相邻磁头单元,这些磁头单元是横向地延伸到纵向方向L和横向方向W的写入单元25a和25b,写入单元25a和写入单元25b相互交替。每个写入单元25a和25b设有传感缝隙,分别为写入缝隙27a,27b,而所有写入缝隙27a是位于横向地延伸到纵向方向L的第一平面P1和所有的写入缝隙27b是位于平行于第一平面P1延伸的第二平面P2。
多层结构包括例如沉积在基片23上的NiFe、AlFeSi或CONbZr的第一软磁层24。第一层24是以这种方法构成:它形成用于每个写入单元25b的导磁单个磁极29b。如果基片23是导磁的,隔离层应出现在基片23和磁极29b之间。另一种方案是以基片本身起一个磁极作用的方法可构成导磁基片的。
多层结构也包括分别平行于第一层24延伸的第二和第三软磁层26、 28。原则上,第二层26是不断开的,而第三层28被构成并形成用于每个写入单元25a的导磁单个磁极29c。第二层26形成用于写入单元25a和25b的公共磁极29c,而每个写入缝隙27a出现在单个磁极29a和公共磁极29c之间,和每个写入缝隙27b出现在单个磁极29b和公共磁极29c之间。各个软磁层相互连接,用于形成适当的磁路。
写入缝隙27a和27b位于互不相同的平面P1和P2上,并包括非磁性材料,例如诸如Al2O3或SiO2之类的氧化物,成对地连接横截于横向方向W的相同平面H。每隔一个相邻写入单元25a和25b的单个磁极29a和29b也连接相同的平面H。
多层结构也包括:延伸在第一和第二软磁层24、26之间的例如铜(Cu)的第一导电体30,和延伸在第二和第三软磁层26、28之间的例如铜的第二导电体32。导电体30和32,每一个都通过导电层的方法形成,每个具有以连接磁迹30a和32a的形式的分支,用于在由这些磁极构成的磁轭中形成单个电感元件。连接磁迹终接于连接面30b和32b。图2D表示标号31的单个电感元件。作为多层结构的保护,磁头可具有一个以多层结构包围在基片和平行块之间的这种方法排列的平行块。平行块可用与形成基片相同的材料构成。
本发明的图3A、3B、3C和3D所示的磁头特别适合于产生强写入场。磁头具有一个磁头面121,用于与诸如磁带或盘之类的记录介质相配合,磁记录介质可在由箭头L所标的方向上相对于磁头移动。该L方向相对于也具有横截纵向方向的横向方向W的磁头面121的纵向方向。
磁头包括基片123,在其上形成薄膜结构。该结构具有多个邻接磁头单元,是横向地延伸到纵向方向L和横向方向W的写入单元125a和125b,写入单元125a和写入单元125b相互交替。每个写入单元125a和125b具有一个传感缝隙,分别是写入缝隙127a、127b,写入缝隙位于横向地延伸到纵向方向L的第一平面P1和写入缝隙127b位于并行于第一平面P1延伸的第二平面P2。
薄膜结构包括淀积在基片123上的第一软磁层124并以这样的方法构成:对于每个写入单元125b它形成导磁的单个磁极129b。
薄膜结构也包括:分别平行于第一层124延伸的第二和第三软磁层126、128。第二层126是不断开的,而第三层128被构成和形成用于每个写入单元125a的导磁单个磁极129a。第二层126形成用于写入单元125a和125b的公共磁极129c,而每个写入缝隙127a出现在单个磁极129a和公共磁极129c之间,和每个写入间隙127b出现在单个磁极129b和公共磁极129c之间。
写入缝隙127a和127b位于互不相同的平面P1和P2并包括非磁性材料,成对地连接横截于横向方向W的相同平面H。每隔一个相邻写入单元125a和125b的单个磁极129a和129b也连接相同平面H。
薄膜结构也包括延伸在第一和第二软磁层124、126之间的第一导电体130和延伸在第二和第三软磁层126和128之间的第二导电体132。两个导体包括两个或更多个在上面的导电层,在实施例中所示的两个,即分别为导电层130a、130b、和132a、132b。层132a和132b经直通连接132ba相互连接。层130a和130b以相同方法相互连接。导电体130和132具有连接磁迹130ab和132ab,分别用于形成类似于图2D所示的单个电感元件。
具有图3A、3B、3C和3D所示的电感传感元件的磁头能简单地用已知薄膜技术进行制造。为此目的进行的方法尤其包括下列步骤:设置第一磁层124;设置导电层130a;设置导电层130b和使它电连接到层130a;设置第二磁层126;设置导电层132a;设置导电层132b和使它电连接到层132a,和设置第三磁层128。
本发明的示于图4A、4B和4C的磁头提供具有纵向方向L和横向方向W的磁头面221。磁头具有组合并置的磁头单元225a和225b的结构,每个磁头单元横向地延伸到所述的方向W和L。磁头单元225a和225b分别具有传感元件231a和231b和具有传感缝隙227a和227b。每隔一个相邻磁头单元的传感缝隙227a和227b位于横向地定向于纵向方向L的不同平面上,而相关缝隙连接对横向方向W横向定向的相同平面。传感缝隙227a和227b位于每个延伸在终接于磁头面221的导磁公共磁极229c和终接于磁头面221的单个磁极229a、229b之间的不相同的平面。传感元件231 a和231b是提供在单个磁极229a和229b周围的写入线圈,并且由导电材料,例如铜构成。
图4A、4B和4C所示的磁头可通过已知技术,尤其薄膜技术,以较容易的方法进行制造。为此目的所进行的方法尤其包括下列步骤:设置写入线圈231b的第一部分231b1;设置单个磁极229b;设置写入线圈231 b的第二部分231b2和使它们电连接到第一部分231b1;设置公共磁极229c;设置写入线圈231a的第一部分231a1;设置单个磁极229a,和设置写入线圈231a的第二部分231a2和把它们电连接到第一部分231a1。
称为“设置”的操作可理解为适当材料、可能的淀积结构的淀积。根据淀积材料的性质,适当的淀积方法可以是溅射、蒸发淀积或另一种已知的适用技术。当实现所述的连接时,使用例如用于形成直通连接装置的光刻。
图5A、5B和5C所示的磁头具有一个磁头面321,该磁头面321具有其中磁记录介质300相对于磁头可移动的纵向方向L,和对纵向方向横向地定向的横向方向W。该磁头也具有终接于磁头面321的传感缝隙327a和327b。磁头包括具有横向延伸到方向L和W的组合并置的磁头单元,尤其是读出单元325a和325b,每个具有传感元件,分另是磁阻元件331a、331b,和传感缝隙是读出缝隙327a、327b。在两个相邻读出单元中,一个读出单元325a的读出缝隙327a和另一个读出单元325b的读出缝隙327b位于横向地定向于纵向方向L的互不相同的平面P1和P2上,而这些读出缝隙连接横向地定向于横向方向W的相同平面H。在两个相邻读出单元中的读出缝隙327a和327b出现在互不相同的平面P1和P2上,延伸在终接于磁头面321的导磁公共磁极329c和终接于磁头面321的单个磁极329a、329b之间。两个相邻读出单元的单个磁极329a和329b连接横向地定向于横向方向W的相同平面H。所述的结构具有各层基本上横向地延伸到磁头面321的多层结构。在两个相邻读出单元中,一个读出单元的读出缝隙和另一个读出单元的读出缝隙都位于互不相同的层中。磁阻元件331a和331b由例如NiFe合金制成。在所示的实施例中,单个磁极329a和329b是断开的磁极,该断开是通过磁阻元件跨接的。
本发明的图6A、6B和6C所示的磁头提供具有纵向方向L和横向方向W的磁头面421。该磁头包括:组合并置的磁头单元425a和425b的结构,每个磁头单元横向延伸到所述方向W和L。磁头单元425a和425b提供有传感元件431a和431b并具有传感缝隙427a和427b。每隔一个相邻磁头单元的传感缝隙427a和427b位于横向地定位于纵向方向L的不同平面,而相关的缝隙连接横向地定向于横向方向W的相同平面。传感缝隙427a和427b位于不同平面,每个缝隙延伸在终接于磁头面421的导磁公共磁极429c和终接于磁头面421的单个磁极429a、429b之间。传感元件431a和431b是提供在单个磁极429a和429b周围的写入线圈并由诸如铜之类的导电材料构成。在该实施例中,这些线圈是两个与位于不同层的部件相互连接的写入线圈。
本发明的图7A、7B和7C所示的磁头是薄膜磁头。磁头具有一个磁头面521,用于与例如在由箭头L所示的方向上相对于磁头可移动的磁带相配合。该方向L对应于也具有横截纵向方向的方向W的磁头面的纵向。
该磁头包括一个例如Al2O3/TiC的基片523,在基片上形成多层结构,尤其是薄膜结构。该结构具有多个相邻磁头单元525a和525b,这些磁头单元是横向地延伸到纵向方向L和横向方向W,其磁头单元525a和525b相互交替。磁头单元525a和525b分别设有传感缝隙527a和527b,而所有的缝隙527a位于横向地延伸到纵向方向L的第一平面P1上,和所有缝隙527b位于平行于第一平面P1延伸的第二平面P2上。
多层结构包括例如NiFe的第一软磁层526。多层结构也包括分别平行于第一层526延伸的第二、第三和第四软磁层527、528和529。层526和527以这种方法构成:它们构成用于每个磁头单元525b的导磁单个磁极529b,该缝隙527b延伸在各磁极之间。层528和529是以这种方法构成:它们构成用于每个磁头单元525a的导磁单个磁极529c,该缝隙527a延长在各磁极之间。为形成有效的磁路,各个软磁层可被相互连接。
诸如SiO2之类的非磁性材料的传感缝隙527a和527b出现在互不相同的平面P1和P2上,成对连接横截于横向方向W的相同平面H。每隔一个相邻磁头单元525a和525b的单个磁极529a和529b也连接相同的平面H。
多层结构也包括延伸在第一和第二软磁层526、527之间的例如铜的第一层电体530,和延伸在第三和第四软磁层528、529之间的例如铜的第二导电体532。导电体530和532的每个都通过导电层的方法形成,每个都具有以连接磁道530a和532a的形式的分支,用于形成由各磁极构成的磁路中的单个电感元件。各个连接磁道终接于连接面530b和523b。
应该注意,本发明并不局限于所示的实施例。例如,传感缝隙的数目可小于或大于在实施例中给定的数目。然而,根据本发明的磁头可包括电感的和磁阻的元件。因此,根据本发明的装置,在使用相对于记录介质移动磁头的设备中包括在横截于记录介质的移动方向的方向上和平行于记录介质的记录平面定向的平面中移动磁头的已知结构。
Claims (11)
1.一种磁头,该磁头提供具有磁记录介质相对于磁头可作相对移动的纵向方向和横向地定向于纵向方向的横向方向的磁头面,并还提供终接于磁头面的传感缝隙,其特征在于,设有一个基本上横向地延伸到纵向方向和横向方向和每个具有至少一个传感元件和一个传感缝隙的组合并置的磁头单元的结构,同时两个相邻磁头单元的至少一个磁头单元的一个传感缝隙和至少另一个磁头单元的一个传感缝隙出现在基本上横向地定向于纵向方向的互不相同的平面上,该传感缝隙延伸在基本上横向地定位于横向方向的一个平面的不同两侧。
2.根据权利要求1所述的磁头,其特征在于,两个相邻磁头单元的至少一个磁头单元的一个传感缝隙和至少另一个磁头单元的一个传感缝隙连接基本上横向地定向于横向方向的相同平面。
3.根据权利要求1或2所述的磁头,其特征在于,两个相邻磁头单元的传感缝隙出现在互不相同的平面上,每一个都延伸在终接于磁头面的两个导磁单个磁极之间。
4.根据权利要求1或2所述的磁头,其特征在于,两个相邻磁头单元的传感缝隙出现在互不相同的平面上,每一个都延伸在终接于磁头面的导磁公共磁极和终接于磁头面的单个磁极之间。
5.根据权利要求3或4所述的磁头,其特征在于,两个相邻磁头单元的单个磁极连接横向地定向于横向方向的相同平面。
6.根据权利要求1、2、3、4或5所述的磁头,其特征在于,该结构具有各层基本上横向地延伸到磁头面的多层结构,同时两个相邻磁头单元的至少一个磁头单元的一个传感缝隙和至少另一个磁头单元的一个传感缝隙出现在互不相同的平面上。
7.根据权利要求1、2、3、4、5或6所述的磁头,其特征在于,传感元件是电感元件。
8.根据权利要求1到7的任一个所述的磁头,其特征在于,设有一个导电体,它位于横向地定向于磁头面的纵向方向的平面上,并通过至少多个磁头单元延伸,具有分支的导体接近至少多个相关磁头,以便形成单个电感元件。
9.根据权利要求3、4或5、附加权利要求6所述的磁头,其特征在于,用于形成单个电感元件的线圈设置在至少多个单个磁极的周围。
10.根据权利要求1、2、3、4、5或6所述的磁头,其特征在于,传感元件是磁阻元件。
11.一种设备,该设备用于在磁记录介质上存储信息和从磁记录介质读出信息,它设置有根据前面任一个权利要求所述的磁头和设有用于相对记录介质移动磁头的装置。
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KR101681403B1 (ko) | 2015-02-09 | 2016-12-01 | 주식회사 성도랜드 | 출력전압 측정이 가능한 조립형 활성수기 |
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FR2191186B1 (zh) * | 1972-07-03 | 1976-01-16 | Inf Ci Interna Fr | |
US3859664A (en) * | 1973-07-09 | 1975-01-07 | Honeywell Inf Systems | Batch fabricated thin-film transducers having a common pole with tunnel erase poles and a plurality of read/write poles |
JPH0664709B2 (ja) * | 1984-01-26 | 1994-08-22 | キヤノン株式会社 | 薄膜磁気ヘツド |
DE3732284A1 (de) * | 1987-09-25 | 1989-04-13 | Merck Patent Gmbh | Substituierte phenyltrifluormethylether |
FR2665011B1 (fr) * | 1990-07-20 | 1992-09-18 | Thomson Csf | Tete magnetique de lecture a effet magneto-resistif. |
US5208714A (en) * | 1990-12-26 | 1993-05-04 | International Business Machines Corporation | Magnetic hybrid interleaved head with closure supporting islands |
US5210667A (en) * | 1991-02-19 | 1993-05-11 | International Business Machines Corporation | Magnetic recording heads employing multiple lapping guides |
US5229895A (en) * | 1991-06-07 | 1993-07-20 | Minnesota Mining And Manufacturing Company | Multi-track servo recording head assembly |
JPH04370511A (ja) * | 1991-06-20 | 1992-12-22 | Matsushita Electric Ind Co Ltd | 積層型磁気抵抗ヘッド |
US5241439A (en) * | 1991-07-02 | 1993-08-31 | U.S. Philips Corporation | Combined read/write thin film magnetic head with two pairs of flux guides |
US5270895A (en) * | 1991-07-05 | 1993-12-14 | U.S. Philips Corporation | Combined read/write thin-film magnetic head with composite shared flux guide |
US5258883A (en) * | 1991-07-05 | 1993-11-02 | U.S. Philips Corporation | Thin-film magnetic head |
US5212611A (en) * | 1991-07-16 | 1993-05-18 | Storage Technology Corporation | Integral read/write recording head with dual gap dimension |
US5307217A (en) * | 1992-06-24 | 1994-04-26 | Digital Equipment Corporation | Magnetic head for very high track density magnetic recording |
EP0760998B1 (en) * | 1995-03-24 | 2002-12-18 | OnStream, Inc. | Magnetic head and system for controlling the position of a magnetic head |
-
1997
- 1997-02-07 KR KR1019970708027A patent/KR19990014686A/ko not_active Application Discontinuation
- 1997-02-07 WO PCT/IB1997/000095 patent/WO1997033274A1/en not_active Application Discontinuation
- 1997-02-07 CN CN97190169A patent/CN1181831A/zh active Pending
- 1997-02-07 JP JP9531598A patent/JPH11506249A/ja active Pending
- 1997-02-07 EP EP97901218A patent/EP0824751A1/en not_active Withdrawn
- 1997-02-18 US US08/800,444 patent/US5982591A/en not_active Expired - Fee Related
- 1997-02-20 TW TW086102047A patent/TW343330B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO1997033274A1 (en) | 1997-09-12 |
EP0824751A1 (en) | 1998-02-25 |
TW343330B (en) | 1998-10-21 |
KR19990014686A (ko) | 1999-02-25 |
JPH11506249A (ja) | 1999-06-02 |
US5982591A (en) | 1999-11-09 |
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