CN118156398B - Manufacturing method of LED array device - Google Patents
Manufacturing method of LED array device Download PDFInfo
- Publication number
- CN118156398B CN118156398B CN202410573066.3A CN202410573066A CN118156398B CN 118156398 B CN118156398 B CN 118156398B CN 202410573066 A CN202410573066 A CN 202410573066A CN 118156398 B CN118156398 B CN 118156398B
- Authority
- CN
- China
- Prior art keywords
- led
- metal
- manufacturing
- array device
- led array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 125
- 239000002184 metal Substances 0.000 claims abstract description 125
- 239000000853 adhesive Substances 0.000 claims abstract description 11
- 230000001070 adhesive effect Effects 0.000 claims abstract description 11
- 238000003466 welding Methods 0.000 claims abstract description 10
- 230000008595 infiltration Effects 0.000 claims abstract description 7
- 238000001764 infiltration Methods 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 51
- 230000008018 melting Effects 0.000 claims description 17
- 238000002844 melting Methods 0.000 claims description 17
- 230000002209 hydrophobic effect Effects 0.000 claims description 16
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 7
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 7
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 7
- 239000004446 fluoropolymer coating Substances 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- -1 polyhexafluoropropylene Polymers 0.000 description 5
- 239000004812 Fluorinated ethylene propylene Substances 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000003814 drug Substances 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 229920009441 perflouroethylene propylene Polymers 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229910001152 Bi alloy Inorganic materials 0.000 description 3
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 239000005662 Paraffin oil Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- QKAJPFXKNNXMIZ-UHFFFAOYSA-N [Bi].[Ag].[Sn] Chemical compound [Bi].[Ag].[Sn] QKAJPFXKNNXMIZ-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- OLXNZDBHNLWCNK-UHFFFAOYSA-N [Pb].[Sn].[Ag] Chemical compound [Pb].[Sn].[Ag] OLXNZDBHNLWCNK-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910000597 tin-copper alloy Inorganic materials 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a manufacturing method of an LED array device, which comprises the following steps: (1) Providing a driving plate, wherein a plurality of bonding pads are arranged on the first plate body surface of the driving plate, and first metal is arranged on the bonding pads; (2) Heating the temperature of the driving plate to a first temperature interval to enable the first metal to be melted and adhered on the bonding pad in an infiltration mode to form a bonding point; (3) Providing a plurality of LED devices, the LED devices including a first electrode face and a second electrode face; (4) Applying the LED devices to the first plate surface in a randomly dispersed manner, wherein at least part of the second electrode surface of the LED devices is infiltrated with the first metal to be adhered to the adhesive dots and form an assembled state with the first electrode surface facing outwards; (5) The temperature of the driving plate is reduced to a second temperature interval, and the first metal is solidified to enable the LED device and the bonding pad to form welding. The invention can greatly improve the manufacturing efficiency of the LED array device and effectively reduce the manufacturing cost of the LED array device.
Description
Technical Field
The invention relates to the technical field of semiconductor display, in particular to a manufacturing method of an LED array device.
Background
The application of third generation semiconductors to displays is an important development direction of display technology. Among them, an LED array device in which semiconductor light emitting devices LEDs are provided as array units or pixels onto a display driving board has excellent display performance (high brightness, high contrast, high color gamut, wide viewing angle, fast response), and low power consumption, long life, and is considered as a display technology more advanced than conventional liquid crystal display, organic light emitting display, whether it is used as a direct display or a divided backlight for liquid crystal display.
At present, the LED array device generally comprises an oversized LED curtain wall, the array unit spacing of the oversized LED curtain wall can reach the centimeter level, and the manufacturing difficulty is low, but because each array unit needs to be welded with one LED lamp bead, the manufacturing efficiency is low and the cost is very high. The LED array device also comprises a Mini-LED display and a Micro-LED display, wherein the Mini-LED display is an LED array device with an array spacing of millimeter level, and at the present stage, the Mini-LED can be used as direct display or as partition backlight (local dimming) of a liquid crystal display, and is realized by binding LED wafers to array unit positions one by adopting a chip binding technology. The Micro-LED display is an LED array device with array unit spacing below millimeter, because the array unit spacing is small and the number is huge, the LED light emitters are generally transferred from the LED growth wafer (such as an epitaxial plate for growing LEDs) to each array unit position of the display driving plate by adopting a huge transfer technology, and the huge transfer technology is not mature at present, and although the huge transfer technology can be transferred batch by using the transfer head, the efficiency is still low, the defect rate is high, and the requirement of mass production cannot be met.
Therefore, there is no efficient technique for manufacturing such LED array devices, which cannot efficiently set a large number of LEDs to the array unit positions of the display driving board, so as to reduce the manufacturing difficulty and cost of such displays.
Disclosure of Invention
The invention aims to solve the technical problem of providing a manufacturing method of an LED array device, which can not only greatly improve the manufacturing efficiency of the LED array device and meet the requirement of mass production, but also has low requirement on automation of equipment and can effectively reduce the manufacturing cost of the LED array device. The technical scheme adopted is as follows:
A method of manufacturing an LED array device, comprising the steps of:
(1) Providing a driving plate, wherein a plurality of bonding pads forming an array are arranged on a first plate body surface of the driving plate, and each bonding pad is provided with first metal;
(2) Heating the temperature of the driving plate to a first temperature interval, wherein the first temperature interval is a temperature interval higher than the melting point of the first metal, so that the first metal on each bonding pad is melted and adhered on the bonding pad in an infiltration manner to form a bonding point;
(3) Providing a plurality of LED devices, wherein each LED device comprises a first electrode surface and a second electrode surface which are opposite to each other, the first electrode surface is a nonmetallic light-emitting surface, the second electrode surface is a welding surface provided with a second metal, and the second metal can be soaked by the first metal in a molten state;
(4) Applying a plurality of the LED devices to a first plate body surface of a driving plate in a random scattering mode, wherein at least part of second electrode surfaces of the LED devices are soaked with first metal and adhered to the adhesive points, and an assembly state that the first electrode surfaces face outwards is formed;
(5) And reducing the temperature of the driving plate to a second temperature interval, wherein the second temperature interval is a temperature interval lower than the melting point of the first metal, so that the first metal in a molten state is solidified to enable the adhered LED device and the bonding pad to form welding, and the LED array device is manufactured.
After the above-described fabrication of the LED array device is completed, a top drive layer may also be provided over the LED array device to form a light emitting display device.
In the above manufacturing method, the steps (1) and (2) form a plurality of bonding points of the pad array on the first plate body surface of the driving plate, the bonding points are formed by the molten first metal attached to the pads, the molten first metal has very high surface tension (generally, the surface tension of the liquid metal is about 10 times that of the common liquid), and meanwhile, the wettability to the non-metal is very low and the wettability to the metal (such as the second metal) is very high, so that the bonding selectivity is very high. The LED device adopted in the steps (3) and (4) comprises a first electrode surface and a second electrode surface opposite to each other, wherein the first electrode surface is a non-metal light-emitting surface, and the second electrode surface is a welding surface of a second metal, so that when the first electrode surface of the LED device is contacted with the first metal in a molten state, the first electrode surface of the LED device is not soaked and adhered by the first metal in the molten state; when the second electrode surface of the LED device is contacted with the first metal in a molten state, the second electrode surface of the LED device can be instantly soaked by the first metal in the molten state, so that the second electrode surface of the LED device is adhered to the adhesive point and forms an assembly state that the first electrode surface of the LED device faces outwards; in the step (5), the temperature of the driving board is reduced to a second temperature range, and the first metal in a molten state is solidified to form welding between the assembled LED device and the bonding pad, thereby manufacturing the LED array device.
The above-mentioned event of assembling the LED device with the bonding pad may be referred to as an assembling event, which is a random event, and may be initiated by only bringing the second electrode surface into contact with the molten first metal, which has a high probability of occurrence, so that in step (4), a large number of LED devices are applied to the first board surface by means of random scattering or the like, and finally, most, even each bonding pad, complete the assembling of the LED device, which is calculated as follows:
In the step (4), when the LED devices are applied to the first board surface in a large number, random, average manner, the number of times of application of the LED devices to each bonding pad is m, p is the occurrence probability of the assembly event, that is, p is the probability of applying the LED device once for one bonding pad, which LED device can be successfully adhered and completed.
For a certain pad, after it is applied by a plurality of LED devices, the probability P that it can complete the assembly is: p=1- (1-P) m. Assuming that the number of pads is N, the number of pads at which the LED device is not successfully assembled after the driving board is applied a plurality of times (total application times m=n×m) is NF, and there are: nf=n (1-p) m. The drive plate may be considered to meet assembly requirements when NF is below a certain value. For example: in a specific scheme of the embodiment, the number of bonding pads is 10000, p=0.2, and the average application frequency M is more than or equal to 50, that is, the total application number M is more than or equal to 500000, so that the driving board can meet the assembly requirement of NF < 1. Thus, the assembly effect can be improved by increasing the m value or the p value. In addition to the increased application of the LED devices, the LED devices can be recycled, i.e., the non-adhered LED devices can be reapplied to the first plate surface, doubling the number of applications.
As a preferred embodiment of the present invention, the first metal is a low melting point metal. In particular, the first metal may be a pure metal or an alloy thereof having a melting point below 400 ℃, for example: the first metal may be tin, bismuth, indium or an alloy thereof, such as tin-lead alloy, tin-indium alloy, tin-silver alloy, tin-lead-silver alloy, tin-copper alloy, tin-silver-copper alloy, tin-bismuth alloy or tin-bismuth-silver alloy; the first temperature zone may be a temperature zone in the range of about 50 ℃ slightly above the melting point of the first metal. Specifically, the first metal may be a tin-bismuth alloy having a melting point lower than 150 ℃, and the first temperature range may be set at 150 to 200 ℃. This makes it possible to heat the light source in a short time without affecting the structure of the driving board, the LED device, and the like.
The first metal can be preset on the bonding pad in a printing, coating, film plating, spraying and other modes, and can be pre-melted and infiltrated on the bonding pad, can be preset on the bonding pad in a paste (such as solder paste) mode, or is attached to the bonding pad in a film plating combined graphical mode. The amount of the first metal on the pad is sufficient to form a sufficient wetting coverage on the pad and the second electrode face; in order to avoid that the melted first metal falls off the bonding pad thereof and to ensure the alignment angle of the LED device, the amount of the first metal should not be excessive, and preferably the thickness or the height of the first metal should not exceed half the width of the bonding pad.
In a preferred embodiment of the present invention, the first electrode surface is a GaP, gaAs, gaN or ITO film surface. When the LED device is peeled off from the epitaxial substrate, the dissociation surface obtained by peeling is generally the first electrode surface, and thus the first electrode surface may be an inorganic material such as GaP, gaAs, gaN which is difficult to be infiltrated with the first metal. In addition, in the subsequent fabrication of the LED device, a transparent conductive film layer such as ITO (indium tin oxide) may be plated on the first electrode surface, which is generally difficult to infiltrate with the first metal.
In addition, when the first electrode surface has metal (such as a metal film with increased conductivity and a metal bump), in order to ensure that the first electrode surface is difficult to infiltrate with the first metal, a certain inorganic film layer may be temporarily disposed on the first electrode surface, for example: the first electrode surface can be provided with a film layer of silicon oxide, silicon nitride, niobium oxide and the like through a magnetron sputtering process and a solution salt plating process, the film layer is covered on metal, and the film layer can be removed through a liquid medicine cleaning method after the LED array is manufactured.
As a preferred embodiment of the present invention, the first electrode surface is covered with a hydrophobic layer. More preferably, the hydrophobic layer is a fluoropolymer coating. For example, the hydrophobic layer may be a coating of a fluoropolymer such as polyhexafluoropropylene, polytetrafluoroethylene (PTFT/Teflon), fluorinated Ethylene Propylene (FEP), polytrifluoroethylene, polyvinylidene fluoride (PVDF), fluorosilicone, or the like. The hydrophobic layer can be preset on the first electrode surface of the LED device through methods such as spraying, vacuum evaporation and the like. The hydrophobic layer is arranged on the first electrode surface of the LED device, so that the first electrode surface of the LED device can be further prevented from being infiltrated with the first metal in a molten state, or when the first electrode surface of the LED device is provided with metal (such as a conductive metal film and a metal bulge), the infiltration of the metal part of the LED device and the first metal is prevented by arranging the hydrophobic layer. The hydrophobic layer can be removed by means of liquid medicine cleaning, plasma cleaning and the like after the LED array device is manufactured, so that the conductivity of the first electrode surface is ensured.
In the preferred embodiment of the present invention, in the step (4), when the second electrode surface of a certain LED device is wetted by the molten first metal on a certain bonding pad, the molten first metal spreads on the second electrode surface of the LED device, and the LED device is aligned with the corresponding bonding pad under the pulling of the surface tension of the molten first metal. Thus, part of the LED device and the bonding pad can be automatically aligned, and the first electrode surface of the LED device is in an outward assembling state.
As a further preferred aspect of the present invention, in the step (4), vibration is also applied to the driving board or the LED device, thereby making it easier for the LED device adhered by the adhesive dots to reach an equilibrium position to be aligned with the corresponding bonding pad.
As a further preferred embodiment of the present invention, in the step (4), when the second electrode surface of a certain LED device is infiltrated by the molten first metal on a certain bonding pad, the molten first metal sufficiently spreads over the second electrode surface and the bonding pad, and under the action of its surface tension, the molten first metal is flattened in a gap between the LED device and the bonding pad (i.e., forms a state where the thickness is uniform throughout the gap), thereby reducing or eliminating the inclination of the LED device with respect to the bonding pad, and achieving alignment and alignment of the LED device with the bonding pad (i.e., overlapping the bonding pad as much as possible).
As a further preferable aspect of the present invention, in the step (4), a plurality of the LED devices are adhered to one of the pads.
As a further preferable aspect of the present invention, in the step (4), the number of LED devices to which some of the pads are adhered is different.
As a still further preferred aspect of the present invention, the size of the bonding pad is larger than the size of the LED device. Generally, after a single bonding pad is fully adhered and covered by a plurality of LED devices, the single bonding pad can not be adhered with other LED devices, and when the sizes of different bonding pads are consistent, the quantity of the LED devices adhered by the different bonding pads is close to or the same; when the sizes of the different pads are not uniform, the number of LED devices to which the different pads are adhered is different.
As another further preferable aspect of the present invention, in the step (4), one of the LED devices is adhered to one of the pads.
As a further preferable aspect of the present invention, the size of the pad is smaller than or equal to the size of the LED device. Thus, after one bonding pad is adhered to one LED device, the bonding point of the bonding pad is covered by the LED device and other LED devices cannot be adhered any more, and finally one bonding pad is adhered to one LED device.
As a still further preferable aspect of the present invention, the size of the bonding pad is 0.5 to 1.0 times the size of the LED device. The size of the bonding pads is set to be 0.5-1.0 times of that of the LED device, so that the bonding pads and the LED device can be assembled one by one, and the adhesion efficiency of the LED device on the bonding pads can be ensured.
As a preferred embodiment of the present invention, the LED devices provided in the step (3) have the same shape and size. The size of the LED device is preferably 1 μm to 500 μm according to the requirements of the LED array device in terms of array pitch, brightness, cost, etc. For example, the size of the LED device may be 20 μm to 50 μm to meet the design requirements of the LED array device as a direct display (i.e., the LEDs are directly used as display pixels).
As a further preferred aspect of the present invention, the aspect ratio of the profile of the LED device is less than or equal to 1.2. In particular, the profile of the LED device may be square or circular (including rounded square or rounded polygon), polygonal, or the like. Therefore, when the LED device is adhered to the bonding pad, the first metal infiltration spreading path is shorter, and automatic alignment is easier to form.
In the preferred embodiment of the present invention, in the step (4), the LED device not adhered by the adhesive dots is also detached from the first board surface of the driving board by applying a force, and is reapplied to the first board surface. The force can be applied by gravity, inertial force, spraying hot liquid towards the driving plate or blowing air to blow the LED device, etc. The number of applications of LED devices can thus be greatly increased without increasing the number of LED devices, so that the above-described assembly event can sufficiently occur on each pad.
In the step (4), the LED device is driven by the flowing hot liquid to be applied to the first plate surface of the driving plate. The hot liquid may be a liquid having a higher boiling point or vaporization temperature, such as paraffin oil, silicone oil, etc., which is heated to a temperature exceeding the melting point of the first metal, as if it were in the first temperature zone, to maintain the temperature of the drive plate. The LED device is driven by flowing hot liquid, so that the LED device can be conveniently applied.
As a further preferred embodiment of the present invention, the hot liquid is composed of molten rosin. Because the vaporization temperature of the molten rosin is high, the molten rosin can be kept in a liquid state in a first temperature zone, and oxide layers on the first metal and the second metal can be removed, so that wettability of the molten rosin is improved.
As a further preferable aspect of the present invention, in the step (2), the drive plate is immersed in the hot liquid; in the step (4), the LED device is driven by the liquid flow formed by the hot liquid to be applied to the first plate body surface of the driving plate, and the LED device which is not adhered is separated from the driving plate. In the step (2), the driving plate is immersed in the hot liquid, so that the interference of an air interface on the movement of the LED device is avoided, and the LED device which is not adhered is more easily separated from the driving plate; the hot liquid in the step (4) can be driven by rotating the blade and the like.
As another further preferable aspect of the present invention, in the step (4), the thermal liquid carrying the LED device is sprayed onto the first plate body face of the driving plate. Therefore, the LED device has certain momentum and forms impact on the sticking point, which is beneficial to breaking through a liquid interface, thereby increasing the contact opportunity of the second electrode surface of the LED device and the first metal, improving the probability of assembly event, and the sprayed hot liquid is also beneficial to taking away the LED device which is not stuck by the sticking point.
As a further preferred embodiment of the invention, the first plate body of the drive plate is arranged facing downwards, and the flowing hot liquid carries the LED devices to be sprayed onto the first plate body of the drive plate from below upwards. Thus, the LED device which is not adhered by the adhesive dots can be separated from the first plate body surface by self gravity.
As a further preferred embodiment of the invention, in step (4), the unattached LED devices are detached from the first board body side of the drive board and reapplied to the first board body side by circulation of hot liquid.
As a further preferable mode of the present invention, in the step (5), the second temperature section is a temperature section which is lower than the melting point of the first metal and keeps the hot liquid in a liquid state, and the unwelded LED devices attached to the first board surface are washed away by the flowing hot liquid in the second temperature section.
Compared with the prior art, the invention has the following advantages:
The manufacturing method of the invention can lead the LED device to be assembled with the bonding pad in a mode of randomly dispersing a large number of LEDs, can be initiated by only enabling the second electrode surface of the LED device to be in contact with the first metal in a molten state, has higher occurrence probability, does not need to align LEDs with the bonding pad deliberately and one by one, can improve the assembly speed of the LED device, can greatly improve the manufacturing efficiency of the LED array device, meets the requirement of mass production, has low requirement on automation of equipment, and can effectively reduce the manufacturing cost of the LED array device.
Drawings
Fig. 1 is a schematic structural view of a driving board provided in step (1) in the first embodiment of the present invention (wherein driving circuits are not shown).
Fig. 2 is a schematic diagram of step (2) in the first embodiment of the preferred embodiment of the invention.
Fig. 3 is a schematic diagram of steps (3) - (4) in example one of the preferred embodiment of the invention.
Fig. 4 is a schematic diagram showing a process of automatically aligning and aligning the LED device with the bonding pad under the surface tension of the molten first metal in step (4) according to the first embodiment of the present invention.
Fig. 5 is a schematic view of step (5) in the first embodiment of the preferred embodiment of the invention.
Fig. 6 is a schematic diagram of the LED device and the bonding pad after bonding in step (5) according to the first embodiment of the present invention.
Fig. 7 is a schematic structural view of an LED array device manufactured in step (5) in the first embodiment of the present invention.
Fig. 8 is a schematic view showing the structure of a light emitting display device manufactured in step (6) in the first embodiment of the invention.
Fig. 9 is a schematic diagram showing the processes of steps (3) - (5) in example two of the preferred embodiment of the invention.
Fig. 10 is a schematic diagram of a method for manufacturing an LED device and a bonding pad according to a third embodiment of the present invention.
Detailed Description
Example 1
As shown in fig. 1 to 8, the method for manufacturing the LED array device includes the steps of:
(1) Providing a driving plate 1, wherein a plurality of bonding pads 12 forming an array are arranged on a first plate body surface 11 of the driving plate 1, each bonding pad 12 is provided with a first metal 13, and the first metal 13 is low-melting-point metal or alloy;
(2) Heating the temperature of the driving board 1 to a first temperature interval, wherein the first temperature interval is a temperature interval higher than the melting point of the first metal 13, so that the first metal 13 on each bonding pad 12 is melted and adhered on the bonding pad 12 in a wetting manner to form a bonding point;
(3) Providing a plurality of LED devices 2, wherein each LED device 2 comprises a first electrode surface 21 and a second electrode surface 22 which are opposite to each other, the first electrode surface 21 is a nonmetallic light-emitting surface, the second electrode surface 22 is a welding surface provided with a second metal, and the second metal can be soaked by the first metal 13 in a molten state;
(4) Applying a plurality of LED devices 2 to the first plate body surface 11 of the driving plate 1 in a mode that the flowing hot liquid 50 drives the LED devices 2, wherein at least part of the second electrode surfaces 22 of the LED devices 2 are soaked with the molten first metal 13 and adhered to the adhesive points to form an assembly state that the first electrode surfaces 21 face outwards, and the LED devices 2 which are not adhered to the adhesive points are separated from the first plate body surface 11 of the driving plate 1 and are reapplied to the first plate body surface 11;
(5) Reducing the temperature of the driving board 1 to a second temperature interval, which is a temperature interval lower than the melting point of the first metal 13, so that the first metal 13 in a molten state is solidified to form welding of the adhered LED devices 2 and the bonding pads 12, and removing the non-welded LED devices 2, thereby manufacturing the LED array apparatus;
(6) A top driving layer 3 is provided on the LED array device, thereby manufacturing a light emitting display device.
In the above manufacturing method, the steps (1) and (2) form a plurality of bonding points of the array of pads 12 on the first plate body surface 11 of the driving plate 1, the bonding points being formed by the molten first metal 13 attached to the pads 12, the molten first metal 13 having a very high surface tension (generally, the surface tension of the liquid metal is about 10 times that of the ordinary liquid), and having a very low wettability to the non-metal and a very high wettability to the metal (such as the second metal), thereby providing a very strong adhesive selectivity. The LED device 2 used in the steps (3) and (4) includes a first electrode surface 21 and a second electrode surface 22 facing away from each other, the first electrode surface 21 is a non-metal light-emitting surface, and the second electrode surface 22 is a welding surface of the second metal, so that when the first electrode surface 21 of the LED device 2 contacts the first metal 13 in a molten state, the first electrode surface is not wetted and adhered by the first metal 13 in a molten state; when the second electrode surface 22 of the LED device 2 is in contact with the molten first metal 13, the second electrode surface can be instantly infiltrated by the molten first metal 13, and when the molten first metal 13 spreads on the second electrode surface 22, the LED device 2 and the bonding pad 12 can be automatically aligned and aligned (i.e. overlapped with the bonding pad 12 as much as possible) by the surface tension of the molten first metal 13, so as to form an outward assembled state of the first electrode surface 21 of the LED device 2; in the step (5), the temperature of the driving board 1 is reduced to a second temperature range, and the first metal 13 in a molten state is solidified to form a weld between the assembled LED device 2 and the bonding pad 12, thereby manufacturing the LED array device.
In this embodiment, the first metal 13 is a tin-bismuth alloy having a melting point lower than 150 ℃, and the first temperature range is set to 150 to 200 ℃. This makes it possible to heat the driving board in a short time without affecting the structure of the driving board 1, the LED device 2, and the like.
In this embodiment, the first electrode surface 21 is a GaP, gaAs, gaN or ITO film surface. When the LED device 2 is peeled off from the epitaxial substrate, the dissociation surface obtained by peeling is generally the first electrode surface 21, and thus the first electrode surface 21 may be an inorganic material such as GaP, gaAs, gaN which is difficult to infiltrate the first metal 13. In addition, in the subsequent fabrication of the LED device 2, a transparent conductive film layer such as ITO (indium tin oxide) may be plated on the first electrode surface 21, which is generally difficult to infiltrate the first metal 13. In addition, when the first electrode surface 21 has metal (such as a metal film or a metal bump for increasing conductivity), a certain inorganic film layer may be temporarily disposed on the first electrode surface 21 in order to ensure that the first electrode surface 21 is difficult to infiltrate with the first metal 13, for example: the first electrode surface 21 may be provided with a film layer of silicon oxide, silicon nitride, niobium oxide, etc. by a magnetron sputtering process or a solution salt plating process, which covers the metal, and may be removed by a method such as a liquid medicine cleaning after the LED array is manufactured.
In this embodiment, the first electrode face 21 of the LED device 2 is covered with a hydrophobic layer 23, the hydrophobic layer 23 being a fluoropolymer coating. For example, the hydrophobic layer 23 may be a coating of a fluoropolymer such as hexafluoropropylene, polytetrafluoroethylene (PTFT/Teflon), fluorinated Ethylene Propylene (FEP), polytrifluoroethylene, polyvinylidene fluoride (PVDF), fluorosilicone, or the like. The hydrophobic layer 23 may be previously disposed on the first electrode surface 21 of the LED device 2 by spraying, vacuum evaporation, or the like. By providing the hydrophobic layer 23 on the first electrode surface 21 of the LED device 2, it is further avoided that the first electrode surface 21 is infiltrated with the first metal 13 in a molten state, or when the first electrode surface 21 of the LED device 2 is provided with a metal (such as a metal film or a metal bump with increased conductivity), the infiltration of the metal portion with the first metal 13 is prevented by providing the hydrophobic layer 23. The hydrophobic layer 23 may be removed by means of liquid medicine cleaning, plasma cleaning, etc. after the fabrication of the LED array device is completed, so as to ensure the conductivity of the first electrode surface 21.
In this embodiment, in the step (4), when the second electrode surface 22 of a certain LED device 2 is wetted by the molten first metal 13 on a certain bonding pad 12, the molten first metal 13 sufficiently spreads over the second electrode surface 22 of the LED device 2 and the bonding pad 12, and is flattened in the gap between the LED device 2 and the bonding pad 12 by its own surface tension (i.e., a state where the thickness is uniform everywhere in the gap), thereby reducing or eliminating the inclination of the LED device 2 with respect to the bonding pad 12, achieving alignment and alignment of the LED device 2 with the bonding pad 12 (i.e., overlapping the bonding pad as much as possible).
In the present embodiment, in the step (4), vibration is also applied to the driving board 1 or the LED device 2, thereby making it easier for the spot-adhered LED device 2 to reach an equilibrium position to be aligned with the bonding pad 12.
In this embodiment, the shapes and sizes of the LED devices 2 provided in the step (3) are the same, and the aspect ratio of the profile of the LED devices 2 is less than or equal to 1.2; the size of the bonding pad 12 is smaller than or equal to the size of the LED device 2; in the step (4), one LED device 2 is adhered to one pad 12. Therefore, after one bonding pad 12 is adhered with one LED device 2, the bonding point is covered by the LED device 2 without adhering other LED devices 2, and finally, one bonding pad 12 is adhered with one LED device 2, so that the one-to-one assembly of the bonding pad 12 and the LED device 2 can be realized, and the adhering efficiency of the LED device 2 on the bonding pad 12 can be ensured. According to the requirements of the LED array device in terms of array spacing, brightness, cost and the like, the size of the LED device 2 is 20-50 μm so as to meet the design requirement of the LED array device as a direct display (namely, LEDs are directly used as display pixels). The outline of the LED device 2 may be square or circular (including rounded square or rounded polygon), polygonal, or the like. Thus, when the LED device 2 is adhered to the pad 12, the path of the infiltration propagation of the first metal 13 in a molten state is shorter, which makes it easier to form automatic alignment.
In this embodiment, the hot liquid 50 is composed of molten rosin. Since the vaporization temperature of the molten rosin is high, it can be kept in a liquid state in the first temperature region, and oxide layers on the first metal 13 and the second metal can be removed, improving wettability thereof.
In the present embodiment, the first plate surface 11 of the driving plate 1 is disposed downward, and the flowing hot liquid 50 carries the LED devices 2 to be sprayed onto the first plate surface 11 of the driving plate 1 from below upward. Therefore, the LED device 2 can have certain momentum and impact the bonding point, which is beneficial to breaking through a liquid interface, thereby increasing the contact opportunity between the second electrode surface 22 of the LED device 2 and the first metal 13, improving the probability of assembly event, and the sprayed hot liquid 50 is also beneficial to taking away the LED device 2 which is not adhered by the bonding point.
Example two
Referring to fig. 9, in the case where the other portions are the same as in the first embodiment, the difference is that: in the present embodiment, in the step (2), the driving board 1 is immersed in the hot liquid 50, so that the interference of the air interface to the movement of the LED device 2 is avoided, and the non-adhered LED device 2 is more easily separated from the driving board 1; in said step (4), the hot liquid 50 carrying the LED devices 2 is sprayed onto the first plate body face 11 of the driving plate 1 by means of a stream of the hot liquid 50 (which may be caused to flow by means of a rotating blade or the like), the LED devices 2 are also collected by the LED device collector 60, and the non-adhered LED devices 2 are caused to be detached from the first plate body face 11 of the driving plate 1 and reapplied to the first plate body face 11 by means of circulation of the hot liquid 50.
In this embodiment, in the step (5), the second temperature interval is a temperature interval that is lower than the melting point of the first metal 13 and keeps the thermal liquid 50 in a liquid state, and the unwelded LED devices 2 attached to the first board surface 11 are washed away by the flowing thermal liquid 50 in the second temperature interval.
Example III
Referring to fig. 10, in the case where the other portions are the same as in the first embodiment, the difference is that: in the present embodiment, the size of the pad 12 is larger than the size of the LED device 2; in the step (4), a plurality of LED devices 2 are adhered to one pad 12, and the number of LED devices 2 adhered to different pads 12 may be the same or different.
In addition, it should be noted that, in the specific embodiments described in the present specification, names of various portions and the like may be different, and all equivalent or simple changes of the structure, the features and the principles described in the inventive patent conception are included in the protection scope of the inventive patent. Those skilled in the art may make various modifications or additions to the described embodiments or substitutions in a similar manner without departing from the structure of the invention or exceeding the scope of the invention as defined in the accompanying claims.
Claims (23)
1. A method of manufacturing an LED array device, comprising the steps of:
(1) Providing a driving plate, wherein a plurality of bonding pads forming an array are arranged on a first plate body surface of the driving plate, and each bonding pad is provided with first metal;
(2) Heating the temperature of the driving plate to a first temperature interval, wherein the first temperature interval is a temperature interval higher than the melting point of the first metal, so that the first metal on each bonding pad is melted and adhered on the bonding pad in an infiltration manner to form a bonding point;
(3) Providing a plurality of LED devices, wherein each LED device comprises a first electrode surface and a second electrode surface which are opposite to each other, the first electrode surface is a nonmetallic light-emitting surface, the second electrode surface is a welding surface provided with a second metal, and the second metal can be soaked by the first metal in a molten state;
(4) Applying a plurality of the LED devices to a first plate body surface of a driving plate in a random scattering mode, wherein at least part of second electrode surfaces of the LED devices are soaked with first metal and adhered to the adhesive points, and an assembly state that the first electrode surfaces face outwards is formed; wherein the random dispersion mode is a mode of driving the LED device by flowing hot liquid, and the temperature of the hot liquid is heated to exceed the melting point of the first metal;
(5) And reducing the temperature of the driving plate to a second temperature interval, wherein the second temperature interval is a temperature interval lower than the melting point of the first metal, so that the first metal in a molten state is solidified to enable the adhered LED device and the bonding pad to form welding, and the LED array device is manufactured.
2. The method of manufacturing an LED array device according to claim 1, wherein: the first metal is a low melting point metal.
3. The method of manufacturing an LED array device according to claim 1, wherein: the first electrode surface is GaP, gaAs, gaN or a film surface of ITO.
4. The method of manufacturing an LED array device according to claim 1, wherein: the first electrode surface is covered with a hydrophobic layer.
5. The method of manufacturing an LED array device according to claim 4, wherein: the hydrophobic layer is a fluoropolymer coating.
6. The method of manufacturing an LED array device according to claim 1, wherein: in the step (4), when the second electrode surface of a certain LED device is wetted by the molten first metal on a certain bonding pad, the molten first metal spreads on the second electrode surface of the LED device, and the LED device is aligned with the corresponding bonding pad under the pulling of the surface tension of the molten first metal.
7. The method of manufacturing an LED array device according to claim 6, wherein: in the step (4), vibration is also applied to the driving board or the LED device, thereby making it easier for the spot-adhered LED device to reach an equilibrium position to be aligned with the corresponding pad.
8. The method of manufacturing an LED array device according to claim 6, wherein: in the step (4), when the second electrode surface of a certain LED device is infiltrated by the molten first metal on a certain bonding pad, the molten first metal sufficiently spreads over the second electrode surface and the bonding pad and is flattened in the gap between the LED device and the bonding pad under the action of self surface tension, thereby reducing or eliminating the inclination of the LED device relative to the bonding pad, and realizing the alignment and alignment of the LED device and the bonding pad.
9. The method of manufacturing an LED array device according to claim 1, wherein: in the step (4), a plurality of LED devices are adhered to one of the bonding pads.
10. The method of manufacturing an LED array device according to claim 9, wherein: the size of the bonding pad is larger than the size of the LED device.
11. The method of manufacturing an LED array device according to claim 9, wherein: in the step (4), the number of the LED devices adhered to part of the bonding pads is different.
12. The method of manufacturing an LED array device according to claim 1, wherein: in the step (4), one of the LED devices is adhered to one of the bonding pads.
13. The method of manufacturing an LED array device of claim 12, wherein: the size of the bonding pad is smaller than or equal to the size of the LED device.
14. The method of manufacturing an LED array device according to claim 1, wherein: the LED devices provided in the step (3) are identical in shape and size.
15. The method of manufacturing an LED array device of claim 14, wherein: the aspect ratio of the profile of the LED device is less than or equal to 1.2.
16. The method of manufacturing an LED array device of claim 15, wherein: the outline of the LED device is square, round or polygonal.
17. The method of manufacturing an LED array device according to claim 1, wherein: in the step (4), the LED device not adhered by the adhesive dots is also detached from the first board body face of the driving board by applying a force, and is reapplied to the first board body face.
18. The method of manufacturing an LED array device according to claim 1, wherein: the hot liquid is composed of molten rosin.
19. The method of manufacturing an LED array device according to claim 1, wherein: in the step (2), immersing the drive plate in the hot liquid; in the step (4), the LED device is driven by the liquid flow formed by the hot liquid to be applied to the first plate body surface of the driving plate, and the LED device which is not adhered is separated from the driving plate.
20. The method of manufacturing an LED array device according to claim 1, wherein: in the step (4), a thermal liquid carrying the LED device is sprayed onto the first plate body face of the driving plate.
21. The method of manufacturing an LED array device of claim 20, wherein: the first plate body surface of the driving plate is arranged downwards, and flowing hot liquid carries the LED devices to be sprayed onto the first plate body surface of the driving plate from bottom to top.
22. The method of manufacturing an LED array device according to claim 1, wherein: in said step (4), the non-adhered LED devices are detached from the first plate face of the driving plate and reapplied to the first plate face by circulation of hot liquid.
23. The method of manufacturing an LED array device according to claim 1, wherein: in the step (5), the second temperature interval is a temperature interval which is lower than the melting point of the first metal and keeps the hot liquid in a liquid state, and the unwelded LED devices attached to the first plate surface are washed away by flowing hot liquid in the second temperature interval.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202410573066.3A CN118156398B (en) | 2024-05-10 | 2024-05-10 | Manufacturing method of LED array device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202410573066.3A CN118156398B (en) | 2024-05-10 | 2024-05-10 | Manufacturing method of LED array device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN118156398A CN118156398A (en) | 2024-06-07 |
CN118156398B true CN118156398B (en) | 2024-07-12 |
Family
ID=91296994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202410573066.3A Active CN118156398B (en) | 2024-05-10 | 2024-05-10 | Manufacturing method of LED array device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN118156398B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118588825A (en) * | 2024-08-05 | 2024-09-03 | 汕头超声显示器技术有限公司 | Manufacturing method and manufacturing equipment of LED array device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111261653A (en) * | 2018-11-30 | 2020-06-09 | 昆山工研院新型平板显示技术中心有限公司 | Micro light emitting diode, display panel and transfer method thereof |
CN113410219A (en) * | 2021-07-17 | 2021-09-17 | 北京梦之墨科技有限公司 | LED film pasting screen and manufacturing method thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI653694B (en) * | 2017-09-13 | 2019-03-11 | 英屬開曼群島商錼創科技股份有限公司 | Micro light-emitting element array manufacturing method, transfer carrier plate and micro light-emitting element array |
CN111739877B (en) * | 2020-07-27 | 2020-12-04 | 深圳市隆利科技股份有限公司 | Method for assembling and preparing LED display through hydrophilic and hydrophobic interfaces |
CN116632125A (en) * | 2020-11-23 | 2023-08-22 | 伊乐视有限公司 | Fluid assembled carrier substrate system for micro light emitting diode mass transfer |
-
2024
- 2024-05-10 CN CN202410573066.3A patent/CN118156398B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111261653A (en) * | 2018-11-30 | 2020-06-09 | 昆山工研院新型平板显示技术中心有限公司 | Micro light emitting diode, display panel and transfer method thereof |
CN113410219A (en) * | 2021-07-17 | 2021-09-17 | 北京梦之墨科技有限公司 | LED film pasting screen and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN118156398A (en) | 2024-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN118156398B (en) | Manufacturing method of LED array device | |
TWI653694B (en) | Micro light-emitting element array manufacturing method, transfer carrier plate and micro light-emitting element array | |
TWI693648B (en) | Gang bonding process for assembling a matrix of light-emitting elements | |
WO2020238099A1 (en) | Method for transferring micro light-emitting diode and method for manufacturing display panel | |
US5328520A (en) | Solar cell with low resistance linear electrode | |
CN110739376B (en) | LED chip, display screen module and manufacturing method thereof | |
JP2005322847A (en) | Semiconductor light emitting device and manufacturing method thereof | |
CN109920885B (en) | Mass transfer and color conversion method for MicroLED | |
CN112968109A (en) | Driving back plate and manufacturing method thereof | |
TWI692887B (en) | Micro-LED chip, display screen and preparation method | |
JP7475735B2 (en) | Method for joining and transferring die packages | |
JP2007194383A (en) | Optical member and backlight | |
CN114284402A (en) | LED device, manufacturing method thereof, display device and light-emitting device | |
JP2004296989A (en) | Substrate for light emitting diode device | |
US8232119B2 (en) | Method for manufacturing heat dissipation bulk of semiconductor device | |
US20230005878A1 (en) | Temporary Chip Assembly, Display Panel, and Manufacturing Methods of Temporary Chip Assembly and Display Panel | |
CN113284819A (en) | Mass transfer method | |
CN215342605U (en) | Display device | |
US10861834B2 (en) | Micro-LED chips, display screens and methods of manufacturing the same | |
US10748959B2 (en) | Fabricating method for display apparatus | |
CN118588825A (en) | Manufacturing method and manufacturing equipment of LED array device | |
TWM588865U (en) | Display panel structure with magnetic light-emitting element | |
CN111129275A (en) | Inverted micro light-emitting diode for maintenance and method for repairing module by using inverted micro light-emitting diode | |
JP2005311122A (en) | Manufacturing method of semiconductor substrate and manufacturing method of electrooptical device | |
CN216648342U (en) | LED device, display device and light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |