CN1181361C - Integrated structure of array waveguide grating and optical fiber array and manufacture method thereof - Google Patents
Integrated structure of array waveguide grating and optical fiber array and manufacture method thereof Download PDFInfo
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Abstract
The present invention relates to the integrated structure of an array waveguide grating and an optical fiber array, which comprises the array waveguide grating and the input and output optical fiber array which is aligned and coupled with the input and output waveguide array of the array waveguide grating, wherein the array waveguide grating and the optical fiber array are integrated on the same silicon substrate, and the input/output waveguide of the array waveguide grating and the optical fiber array use a self-alignment method for directly coupling the end surface. The optical fiber array is formed by that a V-shaped or U-shaped groove array on a base sheet, an upper cover sheet and multi-core monofilm optical fibers are stuck by an adhesive.
Description
Technical field
The present invention is a kind of array waveguide grating and the incorporate structure of fiber array, especially has the structure that can make that the I/O waveguide of array waveguide grating is easily directly aimed at fiber array.The invention still further relates to the method for making this integral structure, and the process of optical waveguide in the manufacturing array waveguide optical grating.
Background technology
Dense wave division multipurpose (DWDM) technology is a kind of effective ways that solve broadband, high capacity optical fiber network communication.Multiplexing demultiplexing device is the critical component of structure dwdm system.Realize that at present wavelength-division multiplex (WDM) technology has three kinds usually, they are array waveguide grating (AWG), fiber grating (FBG) and other interfere type filtering device (Filter).The reliability height, the number of channel is many, passband is smooth, function admirable makes AWG become the one preferred technique of present multiplexing demultiplexing device.As shown in Figure 1, AWG is made up of input waveguide 4, output waveguide 5, input planar waveguide 6, output planar waveguide 7 and Waveguide array 8, I/O waveguide 4,5 is linked to each other with 7 by two planar waveguides 6 with Waveguide array 8, and the length difference Δ L that the adjacent array waveguide is 8 is identical.The principle of work of demodulation multiplexer is: multiplexing light wave is coupled into a certain input waveguide 4 by input optical fibre 2, diffraction in planar waveguide 6, and be coupled into Waveguide array district 8, because of Waveguide array 8 end faces are positioned on the grating circumference, so diffraction light arrives Waveguide array 8 end faces with same phase, the diffraction light of same phase, after being Waveguide array 8 conduction of Δ L through length difference, produced phase differential (phase differential of different wave length is also different), so the light wave of different wave length is output the diverse location that planar waveguide 7 focuses on different output waveguide 5, finish the demultiplexing function.If light wave is oppositely imported, then finish multiplexing function, principle is identical.
Realize the multiplex/demultiplex of wavelength optical signals, light wave must be coupled into the input waveguide of AWG by optical fiber, the light wave of output also must be coupled into output optical fibre by the output waveguide of AWG, and therefore, the efficient coupling of optical fiber and optical waveguide is a very important link in the dwdm system.The direct end face coupling of optical fiber and optical waveguide is a modal coupling process in the real work, and in general, the match condition of the xsect of waveguide and fiber cores face is fixed, so optical fiber and waveguide accurately can be aimed at be greatest problem in the real work.Because the face size of the core diameter of single-mode fiber and ridge waveguide all is in micron dimension, is extremely difficult so keep fine registration, and also can not ignore by the additional coupling loss that misalignment brings.In principle, if can realize fine registration, the reflection loss that re-uses index-matching fluid minimizing interface just can be realized efficient coupling.
Yet, to compare with Filter with FBG, the I/O waveguide of AWG is the Waveguide array with dozens or even hundreds of passage, with the bonding relatively difficulty of the coupling (aligning) of I/O optical fiber.For realizing effective coupling of optical fiber and AWG, must use fiber array, promptly multi-core fiber is installed in the V-shaped groove array of accurate setting, the spacing that they are separated from each other is suitable with I/O waveguide spacing, and precision is a micron order or littler.AWG is exactly the coupling of Waveguide array and fiber array with the coupling (aligning) of optical fiber like this, that is to say, guarantee as far as possible each simple optical fiber with the accurate aligning of corresponding optical waveguide.Figure 1 shows that common coupling synoptic diagram, need regulate the relative position of AWG1 and fiber array 2 and 3 with the multidimensional micro-tensioning system of precision, need simultaneously can the measuring optical fiber array the optical alignment device, developed automatic core-adjusting (coupling) system of fiber array-AWG-fiber array as Japanese fine horse river company.Yet these equipment often involve great expense, and aim at complicated operation in the coupling, and the processing time that needs is long.
In addition, the silica-based optical waveguide that is used for AWG at present mainly contains two kinds: SOI waveguide and SiO
2/ Si waveguide.But these two kinds of waveguide fabrication complex process, and obviously increased the AWG device cost.
Summary of the invention
The object of the present invention is to provide incorporate structure of a kind of array waveguide grating and fiber array and manufacture method thereof, it has, and cost is low, structure is simple with manufacturing process, array waveguide grating is aimed at coupling and is easy to advantage with fiber array.
A kind of array waveguide grating of the present invention and the incorporate structure of fiber array, it is characterized in that, this structure comprises an array waveguide grating and imports with array waveguide grating, the input and output fiber array of output waveguide array alignment coupling, array waveguide grating and fiber array are integrated in on a slice silicon substrate, the I/O waveguide of described array waveguide grating and fiber array adopt Alignment Method directly to carry out the end face coupling, wherein the on-chip V or the U-lag array that are formed by silicon substrate epitaxial growth one bed thickness silicon fiml of fiber array, upper cover plate and multicore single mode optical fiber form by adhesive bonds.
The guided mode field strength point of maximum intensity of the I/O waveguide of described array waveguide grating overlaps with the single-mode fiber core centre.
The used waveguide of described array waveguide grating is a silicon epitaxy type optical waveguide, its substrate attach most importance to doped n type or p type monocrystalline silicon piece.
Waveguide array in the described array waveguide grating and I/O waveguide are the big core diameter silicon ridged single mode waveguide of trapezoidal or square-section.
But the I/O Waveguide end face plated film in the described array waveguide grating is to reduce backreflection.
The upper cover plate of described fiber array is to be made by the material that is selected from the group that comprises silicon, borate glass, quartz and other transmission substance.
Described fiber array upper cover plate be carved with substrate on the V-arrangement in fiber array district or V-arrangement or the U-lag array that the U-lag array is aimed at mutually, perhaps adopt and aim at the positive stop strip structure, fixedly to be bonded in the multi-core fiber between upper cover plate and substrate V-arrangement or U-lag array at the edge of upper cover plate.
V on the described upper cover plate or U-lag array can be formed in conjunction with dry method or wet-etching technology etching by standard photolithography process by silicon wafer, also can use die casting to go out V or U-lag array.
The bonding agent of described fiber array can adopt the ultraviolet glue of ultra-violet curing or the glue that employing is heating and curing.
The multicore single mode optical fiber of described fiber array adopts tapered fiber with the coupling efficiency of raising with big core diameter silicon ridged single mode waveguide.
The end face of the multicore single mode optical fiber of described fiber array also can be at its end face coating to reduce backreflection through polishing.
The manufacture method of a kind of array waveguide grating of the present invention and fiber array integral structure, can make the mould field point of maximum intensity of I/O waveguide of described array waveguide grating and the autoregistration of single-mode fiber center and realize efficient coupling, it is characterized in that, this method comprises the steps: that (1) adopt the conventional epitaxy technique bed thickness silicon fiml of grow, formation substrate on heavy doping n type or p type silicon monocrystalline substrate; (2) etch the array wave-guide grating structure that adheres to specification in the array waveguide grating district of substrate; (3) etch V-arrangement or the U-lag array structure that adheres to specification in the fiber array district of substrate, but at the corresponding V-arrangement of upper cover plate etching or the U-lag array of fiber array, or the positive stop strip structure is aimed at the edge; (4) after the polishing of multicore single mode fiber end face, I/O Waveguide end face and fiber end face plated film to array waveguide grating, multi-core fiber is bonded in up and down between the V-arrangement or U-lag array of the upper cover plate aimed at and substrate with bonding agent again, forms and the autocollimatic fiber array of I/O waveguide array of array waveguide grating.
Described step (2) is performed such, and according to the domain of designing requirement array of designs waveguide optical grating, guarantees that I/O waveguide spacing is identical with the strictness of multicore single mode optical fiber spacing; Plate-making; High-temperature thermal oxidation or chemical gaseous phase depositing process form layer of silicon dioxide as masking layer on substrate; Utilize photoetching and wet method anisotropic etch or dry process reaction ion etching to etch array wave-guide grating structure in substrate array waveguide grating district; High-temperature thermal oxidation or chemical gaseous phase depositing process form the layer of silicon dioxide protective seam on substrate.
Described step (3) is performed such, reticle pattern according to designing requirement design fiber array district's V-arrangement or U-lag array, V-arrangement or U-lag array pitch are identical with the strictness of multicore single mode optical fiber spacing on the one hand, accurately limit the registration mark position between this domain and array waveguide grating domain on the other hand; Design upper cover plate domain; Plate-making; High-temperature thermal oxidation or chemical gaseous phase depositing process form the layer of silicon dioxide masking layer on substrate; Utilize photoetching and wet method anisotropic etch or dry process reaction ion etching to etch V-arrangement or U-lag array in substrate fiber array district; Etching upper cover plate figure.
The silicon dioxide masking floor of the silicon dioxide layer of protection of described array waveguide grating and fiber array district V-arrangement or U-lag array forms the same period; be that the second layer silicon dioxide that forms on the substrate act as protective seam in the array waveguide grating district, the district act as masking layer at fiber array.
A kind of manufacturing array waveguide optical grating of the present invention is characterized in that epitaxial growth one deck silicon on the heavily doped silicon substrate, and thermal oxide thereon or chemical vapor deposition one deck thin silicon dioxide masking jig with the method for optical waveguide; Adopt standard photolithography process in conjunction with anisotropic wet corrosion or reactive ion dry etching again, prepare in the array waveguide grating planar waveguide and as the ridge waveguide array of Waveguide array and I/O waveguide.
Description of drawings
For further specifying content of the present invention and characteristics, below in conjunction with drawings and Examples the present invention is done a detailed description, wherein:
Fig. 1 is the existing common array waveguide grating and the coupling synoptic diagram of fiber array;
Fig. 2 is the array waveguide grating of the embodiment of the invention and the three-dimensional view of fiber array integral structure;
Fig. 3 is the aligning coupling unit three-dimensional view that has installed fiber array;
Fig. 4 is the aligning coupling unit three-dimensional view that is unkitted fiber array;
Fig. 5 be preparation array waveguide grating of the present invention and with the process chart of fiber array integral structure;
Fig. 6 is the cross section structure figure of used silicon ridge waveguide in the array waveguide grating of the present invention, (a) trapezoid cross section, square-section (b).
Embodiment
Seeing also Fig. 2 is the array waveguide grating of the explanation embodiment of the invention and the three-dimensional view of fiber array integral structure.Under illustrated case, the port number of fiber array is 8, also has 16 the tunnel, the 32 tunnel, the 64 tunnel, the 128 tunnel etc. in the practical application.As shown in Figure 2, this structure comprises substrate 40 and two upper cover plates 50, and is bonded in input, output multicore single mode optical fiber 51 between substrate 40 and the upper cover plate 50.
Wherein, substrate 40 is divided into three districts: AWG district 10, input optical fibre array area 20 and output optical fibre array area 30, and they form on same silicon substrate, and soon three discrete optical passive components integrate among Fig. 1.
Array waveguide grating is 10 formation in the AWG district, and its effect is that the light signal that will be coupled into input waveguide 11 by input optical fibre array 20 ' carries out multiplexing or demultiplexing, is coupled into output optical fibre array 30 ' by output waveguide 12 again.The waveguide that is used for AWG10 ' among the present invention is the simple silicon epitaxy waveguide of structure and manufacturing process, and Waveguide array 15 wherein and I/O waveguide 11,12 arrays adopt the ridge structure with trapezoidal or square-section.The fiber array district is etched with V-arrangement or U-shaped collimation groove array, and the plane of symmetry of single groove overlaps with the plane of symmetry of corresponding single waveguide in the AWG I/O waveguide 11,12, and separation is identical with multi-core fiber 51 spacings.Multi-core fiber 51 parallel equidistant under the guide effect of V or U-lag is arranged in V or the U-lag, after determining the best relative distance of 51 of the I/O waveguide 11,12 of AWG10 ' and multi-core fibers, solidify through bonding agent and to be bonded between V or U-lag and the upper cover plate 50.Bonding agent can adopt the ultraviolet glue of ultra-violet curing or other glue that employing is heating and curing.
But upper cover plate 50 etching V or U-lag array are also aimed at one by one with the V or the U-lag equidistant parallel in fiber array district on the substrate 40, in V or U-lag formed about multi-core fiber 51 was adhesively fixed on the rhombus or rectangular channel.Perhaps adopt and aim at the positive stop strip structure, in addition also etching groove not at the edge of upper cover plate 50.But the method for etching V or U-lag array is a lot of on upper cover plate 50: a kind of lithographic method is to be formed in conjunction with dry method or wet-etching technology etching by the standard photoetching by silicon substrate, and another kind of method can use suitable mold to cast out V or U-lag array.Solidify because of multi-core fiber 51 can adopt ultraviolet glue, so the material of upper cover plate 50 can also adopt as light transmissive materials such as quartz, borate glasses except the silicon substrate that is easy to etching V or U-lag.
Require the insertion loss of device little in the dwdm system, must reduce various losses as far as possible.The end face return loss that multi-core fiber 51 and waveguide are 11,12 can reduce by selecting suitable bonding agent.What AWG I/O waveguide 11,12 was adopted among the present invention is the waveguide of ridged silicon epitaxy, adopts big waveguide core diameter (10～20 μ m) can reduce its loss.Because the xsect of waveguide 11,12 and the match condition of multi-core fiber 51 core faces directly influence coupling efficiency, and the core diameter of ordinary optic fibre is 9～10 μ m at present, for reducing the coupling mismatch loss between AWG10 ' and fiber array 20 ', 30 ', the single mode multi-core fiber that adopts in our most preferred embodiment is the bigger tapered fiber of end face core diameter, and carried out the end face polishing before bonding aiming at, in addition can be at the I/O waveguide 11,12 of AWG10 ' and multi-core fiber 51 end face coatings to reduce backreflection.
Fig. 3 is a three-dimensional view (part) of describing the aligning coupling unit that installs fiber array 20,30.The I/O ridge waveguide 11,12 of AWG10 ' is by fiber array 20 ', 30 ' V or U-shaped gathering sill and fiber array 20 ', 30 ' autocollimation, the guided mode field point of maximum intensity and the corresponding fiber optic hub that are single waveguide overlap, thereby realize the efficient coupling between AWG10 ' and fiber array 20 ', 30 '.As shown in Figure 3, after single mode multi-core fiber 51 is put into V-shaped groove, simple optical fiber is restricted at directions X and Y direction, as long as accurate design parameter and strict CONTROL PROCESS condition, optical fiber core diameter center is overlapped with wave guide mode field point of maximum intensity, this moment, optical fiber had only Z direction one degree of freedom, that is to say, carry out AWG10 ' and fiber array 20 ', 30 ' on time, only need adjusting fiber array 20 ', the 30 ' relative position at Z direction and I/O waveguide array 11,12 just can find the optimum coupling point, this just greatly reduces the modulation difficulty.
Fig. 4 describes this structure to aim at the three-dimensional view of coupling unit (only having got 11,12 and V-shaped grooves 70 of single waveguide among the figure) when being unkitted fiber array.Shown in the figure is two embodiment that adopt wet processing to obtain, and AWG I/O waveguide 11,12 is the silicon ridge waveguide of trapezoid cross section, and alignment slot is a V-shaped groove 70.V-shaped groove 70 has two kinds of cross sectional shapes: trapezoidal (a) and V-arrangement (b).Also can adopt dry process, the AWG I/O waveguide 11,12 that obtains is the silicon ridge waveguide of square-section, and alignment slot is a U-lag.
As mentioned above, incorporate structure can make the I/O waveguide 11,12 of array waveguide grating 10 ' and fiber array 20 ', 30 ' adopt Alignment Method directly to carry out the end face coupling according to the present invention, wherein one of most critical be the center that will guarantee every optical fiber in the fiber array 20 ', 30 ' with waveguide array 11,12 in the mould field point of maximum intensity of corresponding waveguide overlap, therefore must strict control make the processing step of this structure.
Fig. 5 is the process flow diagram of basic process steps of method that show to make the above-mentioned integral structure of preferred embodiment of the present invention.
According to method shown in Figure 5, at first on heavy doping n type or p type silicon monocrystalline substrate, adopt the conventional epitaxy technique bed thickness silicon fiml of growing.Because the free carrier concentration of substrate and epitaxial loayer is different, its refractive index is also different, the light wave that is parallel to the silicon chip surface propagation can be constrained in the epitaxial loayer, the substrate 40 of Xing Chenging is actually a planar optical waveguide therefrom, and optical waveguide technology and structure that this method is made are quite simple.
Second step was to etch the array wave-guide grating structure that adheres to specification in the array waveguide grating district 10 of substrate 40.Design the domain of satisfactory array waveguide grating 1 by design software, guarantee that I/O waveguide 11,12 spacings are identical with the 51 spacing strictnesses of multicore single mode optical fiber, and analog computation goes out the position of the mould field point of maximum intensity of I/O waveguide 11,12; Make mask plate according to design layout; And then on substrate, form layer of silicon dioxide as masking layer with high-temperature thermal oxidation or chemical gaseous phase depositing process; Etch array wave-guide grating structure in conjunction with wet method anisotropic etch or dry process reaction ion etching in substrate array waveguide grating district 10 by standard photolithography process; Adopt high-temperature thermal oxidation or chemical gaseous phase depositing process to form the protective seam of layer of silicon dioxide as AWG subsequently again on substrate, this has also just formed the masking layer of fiber array district 20,30 etching V-arrangements or U-lag 70 simultaneously; The position of the mould field point of maximum intensity of the I/O waveguide 11,12 of hot-wire array waveguide optical grating.
Next step will etch the V-arrangement that adheres to specification or the array structure of U-lag 70 in the fiber array district 20,30 of substrate 40, at fiber array 20 ', 30 ' corresponding V-arrangement of upper cover plate 50 etchings or U-lag array.According to the position of the mould field point of maximum intensity of the I/O waveguide 11,12 of previous step simulation and the array waveguide grating 10 ' that tests out and the reticle pattern of other designing requirement design fiber array district's V-arrangement or U-lag 70 arrays, V-arrangement or U-lag 70 array pitch are identical with the 51 spacing strictnesses of multicore single mode optical fiber on the one hand, accurately limit the registration mark position between this domain and array waveguide grating domain on the other hand; Design upper cover plate 50 domains; Plate-making; Because the silicon dioxide masking layer of V-arrangement or U-lag 70 arrays formed in the last step, can directly utilize photoetching and wet method anisotropic etch or dry process reaction ion etching to etch V-arrangement or U-lag 70 arrays of aiming at I/O waveguide 11,12 in substrate grating array district 20,30; Etching upper cover plate 50 figures.
Final step is the bonding of multicore single mode optical fiber 51 and upper cover plate 50 and substrate 40.After multicore single mode optical fiber 51 carried out end face polishing, at this moment can be at optical fiber 51 end faces and waveguide 11,12 end face coatings to reduce backreflection, then with multi-core fiber 51 parallel V-arrangement or U-lag 70 arrays of putting into substrate, determine that Z is behind optimum coupling point position, between the V-arrangement or U-lag 70 arrays of upper cover plate 50 and substrate 40, form I/O waveguide array 11,12 autocollimatic fiber arrays 20 ', 30 ' with adhesive bonds with array waveguide grating 10 '.So, make array waveguide grating 10 ' of the present invention and with fiber array 20 ', 30 ' the incorporate structure.
Fig. 6 is the cross section structure figure that low-cost preparation AWG10 ' uses the silicon epitaxy waveguide among description the present invention.As previously mentioned, on heavy doping n type or p type silicon monocrystalline substrate 80, adopt the conventional epitaxy technique bed thickness silicon fiml 90 of growing.This has just formed preliminary silicon epitaxy optical waveguide.Further adopt photoetching process; form square-section (a) in conjunction with dry process reaction ion etching; or in conjunction with wet method anisotropic etch formation trapezoid cross section (b); thermal oxide thereon subsequently or chemical vapor deposition one deck thin silicon dioxide diaphragm 100; promptly become the silicon epitaxy ridge waveguide; can be used for I/O waveguide 11,12 and the Waveguide array 15 of AWG, this preparation method is simple.If the size Selection of waveguide is appropriate, the insertion loss of device can be very low.
The invention also discloses a kind of manufacturing array waveguide optical grating method with optical waveguide, it is epitaxial growth one deck silicon on the heavily doped silicon substrate, and thermal oxide thereon or chemical vapor deposition one deck thin silicon dioxide are as diaphragm; Adopt standard photolithography process in conjunction with wet method or dry etching technology again, make planar waveguide, Waveguide array and I/O waveguide array in the array waveguide grating.
Although at length show and described the present invention with reference to its certain embodiments, should also be noted that technician for this professional domain, can carry out various changes to its form and details, and not break away from the scope of the present invention that claims limit.
Claims (15)
1. array waveguide grating and the incorporate structure of fiber array, it is characterized in that, this structure comprises an array waveguide grating and imports with array waveguide grating, the input and output fiber array of output waveguide array alignment coupling, array waveguide grating and fiber array are integrated in on a slice silicon substrate, the I/O waveguide of described array waveguide grating and fiber array adopt Alignment Method directly to carry out the end face coupling, wherein the on-chip V or the U-lag array that are formed by silicon substrate epitaxial growth one bed thickness silicon fiml of fiber array, upper cover plate and multicore single mode optical fiber form by adhesive bonds.
2. array waveguide grating according to claim 1 and the incorporate structure of fiber array is characterized in that, the guided mode field strength point of maximum intensity of the I/O waveguide of described array waveguide grating overlaps with the single-mode fiber core centre.
3. array waveguide grating according to claim 1 and the incorporate structure of fiber array is characterized in that, the used waveguide of described array waveguide grating is a silicon epitaxy type optical waveguide, its substrate attach most importance to doped n type or p type monocrystalline silicon piece.
4. array waveguide grating according to claim 1 and the incorporate structure of fiber array is characterized in that, Waveguide array in the described array waveguide grating and I/O waveguide are the big core diameter silicon ridged single mode waveguide of trapezoidal or square-section.
5. array waveguide grating according to claim 1 and the incorporate structure of fiber array is characterized in that, but the I/O Waveguide end face plated film in the described array waveguide grating is to reduce backreflection.
6. array waveguide grating according to claim 1 and the incorporate structure of fiber array is characterized in that the upper cover plate of described fiber array is to be made by the material that is selected from the group that comprises silicon, borate glass, quartz and other transmission substance.
7. array waveguide grating according to claim 1 and the incorporate structure of fiber array, it is characterized in that, described fiber array upper cover plate be carved with substrate on the V-arrangement in fiber array district or V-arrangement or the U-lag array that the U-lag array is aimed at mutually, perhaps adopt and aim at the positive stop strip structure, fixedly to be bonded in the multi-core fiber between upper cover plate and substrate V-arrangement or U-lag array at the edge of upper cover plate.
8. array waveguide grating according to claim 1 and the incorporate structure of fiber array, it is characterized in that, V on the described upper cover plate or U-lag array can be formed in conjunction with dry method or wet-etching technology etching by standard photolithography process by silicon substrate, also can use die casting to go out V or U-lag array.
9. array waveguide grating according to claim 1 and the incorporate structure of fiber array is characterized in that, the bonding agent of described fiber array can adopt the ultraviolet glue of ultra-violet curing or the glue that employing is heating and curing.
10. array waveguide grating according to claim 1 and the incorporate structure of fiber array is characterized in that, the multicore single mode optical fiber of described fiber array adopts tapered fiber with the coupling efficiency of raising with big core diameter silicon ridged single mode waveguide.
11. the incorporate structure of array waveguide grating according to claim 1 and fiber array is characterized in that, the end face of the multicore single mode optical fiber of described fiber array also can be at its end face coating to reduce backreflection through polishing.
12. the manufacture method of array waveguide grating and fiber array integral structure, can make the mould field point of maximum intensity of I/O waveguide of described array waveguide grating and the autoregistration of single-mode fiber center and realize efficient coupling, it is characterized in that this method comprises the steps:
(1) adopts the conventional epitaxy technique bed thickness silicon fiml of on heavy doping n type or p type silicon monocrystalline substrate, grow, formation substrate;
(2) etch the array wave-guide grating structure that adheres to specification in the array waveguide grating district of substrate;
(3) etch V-arrangement or the U-lag array structure that adheres to specification in the fiber array district of substrate, but at the corresponding V-arrangement of upper cover plate etching or the U-lag array of fiber array, or the positive stop strip structure is aimed at the edge;
(4) after the polishing of multicore single mode fiber end face, I/O Waveguide end face and fiber end face plated film to array waveguide grating, multi-core fiber is bonded in up and down between the V-arrangement or U-lag array of the upper cover plate aimed at and substrate with bonding agent again, forms and the autocollimatic fiber array of I/O waveguide array of array waveguide grating.
13. the manufacture method of array waveguide grating according to claim 12 and fiber array integral structure, it is characterized in that, described step (2) is performed such, according to the domain of designing requirement array of designs waveguide optical grating, guarantee that I/O waveguide spacing is identical with the strictness of multicore single mode optical fiber spacing; Plate-making; High-temperature thermal oxidation or chemical gaseous phase depositing process form layer of silicon dioxide as masking layer on substrate; Utilize photoetching and wet method anisotropic etch or dry process reaction ion etching to etch array wave-guide grating structure in substrate array waveguide grating district; High-temperature thermal oxidation or chemical gaseous phase depositing process form the layer of silicon dioxide protective seam on substrate.
14. the manufacture method of array waveguide grating according to claim 12 and fiber array integral structure, it is characterized in that, described step (3) is performed such, reticle pattern according to designing requirement design fiber array district's V-arrangement or U-lag array, V-arrangement or U-lag array pitch are identical with the strictness of multicore single mode optical fiber spacing on the one hand, accurately limit the registration mark position between this domain and array waveguide grating domain on the other hand; Design upper cover plate domain; Plate-making; High-temperature thermal oxidation or chemical gaseous phase depositing process form the layer of silicon dioxide masking layer on substrate; Utilize photoetching and wet method anisotropic etch or dry process reaction ion etching to etch V-arrangement or U-lag array in substrate fiber array district; Etching upper cover plate figure.
15. the manufacture method of array waveguide grating according to claim 12 and fiber array integral structure; it is characterized in that: the silicon dioxide masking floor of the silicon dioxide layer of protection of described array waveguide grating and fiber array district V-arrangement or U-lag array forms the same period; be that the second layer silicon dioxide that forms on the substrate act as protective seam in the array waveguide grating district, the district act as masking layer at fiber array.
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