CN1153076C - Method of making multimode interference type optical coupler on insulating silicon material layer - Google Patents
Method of making multimode interference type optical coupler on insulating silicon material layer Download PDFInfo
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- CN1153076C CN1153076C CNB011134496A CN01113449A CN1153076C CN 1153076 C CN1153076 C CN 1153076C CN B011134496 A CNB011134496 A CN B011134496A CN 01113449 A CN01113449 A CN 01113449A CN 1153076 C CN1153076 C CN 1153076C
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Abstract
The present invention relates to a method for manufacturing a multimode interference type optical coupler on the silicon material of an insulating layer, which belongs to the field of plane optical coupling. The present invention is characterized in that silicon on the insulating layer is used as raw material; a suit of simple method for manufacturing the multimode interference coupler is put forward by utilizing the properties of the silicon in anisotropic corrosive liquid. An input and output waveguide satisfies single-mode conditions; a multimode waveguide region is a rectangular waveguide; the side wall of the waveguide is absolutely perpendicular and is very flat. The connection part of the waveguide in the multimode region with the input and output waveguide is a horn-shaped transition region automatically formed in corrosion.
Description
Technical field
The present invention relates to a kind of method of making multimode interference type optical coupler, be meant a kind of method that (SOI) makes multimode interference type optical coupler on insulating silicon material layer especially.The field that belongs to the plane photo-coupler.
Background technology
Photo-coupler is the Primary Component of optical communication system and optical information processing, and it is that a class can make the light signal in the transmission be coupled in the coupled zone of special construction, and the device of reallocating.Divide from port, it comprises 1 * N coupling mechanism, N * N coupling mechanism and M * N coupling mechanism etc. in form.The method of making photo-coupler is roughly divided three kinds at present: discrete optical elements sets mould assembly, full fiber type and planar waveguide-type.Discrete optical elements sets mould assembly photo-coupler device loss is big, and with optical fiber coupling difficulty, poor stability is eliminated by the modern optical fiber communication.Full optical fibre device directly forms the coupling of certain form between two (or more than) optical fiber.It is quite ripe to make the present technology of single-mode optical-fibre coupler with optical fiber fused biconical taper legal system, but this method just is difficult to satisfy the demand when realizing the tree-like and star-type coupler that multichannel is divided equally, and is difficult to realize the integrated of optical device.Utilize the planar optical waveguide principle to make photo-coupler because material and technologic characteristics, have better machinery and environmental stability, device has that volume is little, splitting ratio control accurately, be easy to characteristics such as production in enormous quantities, being particularly suitable for making multicoupler, also is to realize the integrated approach of device.
The planar type optical waveguide photo-coupler can be divided into waveguide-coupled type, Y branching type and multi-mode interference-type again.Waveguide-coupled type and Y branching type photo-coupler are the functions that realizes multicoupler by elementary cell splicing method, and these devices are along with the increase of coupling way, and not only the manufacture craft difficulty is big, and performance index are difficult to reach requirement.Multimode interference type optical coupler can directly be finished 1 * N or N * N, the coupling of M * N, be the optimum structure that obtains the compact high-performance photo-coupler at present, and this kind device can be used for the making of wavelength division multiplexer, will in dense wavelength division multiplexing system, exist huge application potential.
Make multimode interference type optical coupler and will guarantee that on the one hand its multimode district waveguide sidewalls is vertical and all waveguide sidewalls are smooth; On the other hand, in order to allow as much as possible coupling light in the output waveguide, and reduce the coupling loss of mould, I/O area adopts pyramidal structure more usually.Dry etching (as reactive ion etching) is the method for making that is widely used in multimode interference type optical coupler at present, and the device that dry etching is made mainly exists multimode district waveguide sidewalls can not guarantee problems such as vertical fully, waveguide sidewalls and tapered zone flatness are not high.
Summary of the invention
The object of the present invention is to provide a kind of method of making multimode interference type optical coupler on insulating silicon material layer, it has overcome the shortcoming that dry etching is made multimode interference type optical coupler.
Method for making provided by the invention is to be starting material with the silicon on the insulation course, utilize the character of silicon in anisotropic etchant to propose the easy technology that a cover is made multi-mode interference coupler, this technology can obtain the vertical and very smooth device of waveguide sidewalls of multimode district sidewall by wet etching, and is the automatic trumpet type zone of transition that can improve device performance that forms in corrosion in the junction of waveguide of multimode district and input and output waveguide; On the other hand, greatly reduce the difficulty of photoetching in this way, and the process allowance scope of device is very big.
Multimode interference type optical coupler 1 * N type the structure that the present invention relates to is (N=4 among the figure) as shown in Figure 1, and the structure of other port form similarly.The input and output waveguide is the ridge waveguide that satisfies single mode condition, and the multimode waveguide district is a rectangular waveguide, and sidewall two ends, multimode district are respectively silicon and air, exist big refringence between them.The sidewall of all waveguides form by anisotropic etch silicon materials on the insulation course in (100) crystal orientation perpendicular to the surface the 100} face, and pyramidal structure by in the corrosion from stop { the 111} crystal face constitutes.
The concrete processing step of making this device is as follows:
1. the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course in (100) crystal orientation, its thickness is between 150nm-300nm.
2. photoetching forms the bell-mouthed figure of input and output waveguide and they and the transition of multimode district.
3. anisotropic etchant, as the potassium hydroxide solution of mass concentration at 30%-60%, or mass concentration corrodes silicon in the tetramethyl ammonium hydroxide solution of 5%-40%, and etching time is controlled at the single mode condition that corrosion depth satisfies ridge waveguide.
4. remove silicon dioxide layer.
5. the silicon materials surface thermal oxide layer of silicon dioxide once more on the insulation course, its thickness is between 150nm-300nm.
6. the secondary photoetching forms the figure in multimode waveguide district, corrode silicon dioxide.
7. corrode silicon in anisotropic etchant, etching time is controlled at till silicon materials upper strata silicon on the insulation course corrodes.
8. remove silicon dioxide layer.
9. final silicon materials surface heat oxidation layer of silicon dioxide on insulation course, thickness is 1-2 μ m.
Technological merit:
1. utilize the automatic hydraucone structure that can improve device performance that forms of the crystal face that can occur in the anisotropic etch in the zone of transition of input and output waveguide and the waveguide of multimode district.
2. avoided the dry etching multimode district waveguide sidewalls can not vertical fully problem.
3. the edge of the sidewall flatness of all waveguides and hydraucone structure all is significantly improved with respect to dry etching.
4. owing to common input and output waveguide is all very carefully grown, very high requirement has been proposed to photoetching technique.The width of waveguide bar is the several times (usually more than three times, shown in figure two) of the final waveguide bar width that forms during method photoetching that the present invention adopts, greatly reduces the requirement to photoetching like this, also makes the precision of waveguide be easier to control simultaneously.
5. input and output and the waveguide of multimode district all are to use the method for wet etching to realize that technology is simple, and condition is easy to control.
Description of drawings
Further illustrate substantive distinguishing features of the present invention and marked improvement below in conjunction with drawings and Examples.
Fig. 1 is the synoptic diagram of 1 * 4 multimode interference type optical coupler, (a) is vertical view, (b) for corresponding respectively to the outboard profile of aa ', bb ', cc ' position in (a).
Fig. 2 is the photo of input and output waveguide and multimode district junction microscopically.(a) do not remove the photo of mask after waveguide corrodes; (b) photo behind the removal mask.The waveguide surface that obtains after the corrosion is very smooth, and sidewall is vertical.
1 is input waveguide among the figure, and 2 is the waveguide of multimode district, and 3 is output waveguide, 4 are the automatic hydraucone that forms in input and output waveguide and the interval corrosion of multimode, 5 is the device layer silicon in silicon on the insulation course (SOI) material, and 6 is SOI material intermediate oxide layer, and 7 is SOI material substrate silicon.8 mask edges for photoetching formation, 9 edges for the waveguide of final formation after the corrosion.
Embodiment
The manufacturing of embodiment 1:1 * 4 multimode interference type optical couplers
The concrete processing step of device is as follows:
1. the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course in (100) crystal orientation, its thickness is at 200nm.
2. photoetching forms the bell-mouthed figure (as shown in Figure 2) of input and output waveguide and they and the transition of multimode district.
3. corrode silicon in mass concentration is 20% potassium hydroxide solution, etching time is controlled at the single mode condition that corrosion depth satisfies ridge waveguide.The waveguide surface of corrosion back gained is very smooth, and sidewall is vertical.
4. remove silicon dioxide layer.
5. the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course, its thickness is at 200nm.
6. the secondary photoetching forms the figure in multimode waveguide district, corrode silicon dioxide.
7. corrode silicon in mass concentration is 20% potassium hydroxide solution, etching time is controlled at till silicon materials upper strata silicon on the insulation course corrodes.
8. remove silicon dioxide layer.
9. final silicon materials surface heat oxidation layer of silicon dioxide on insulation course, thickness is about 1 μ m.
The manufacturing of embodiment 2:1 * 6 multimode interference type optical couplers
Surface heat zinc oxide-silicon dioxide thickness 150nm, the anisotropic etchant of use are that mass concentration is 20% tetramethyl ammonium hydroxide solution, form the hydraucone bonding pad through photoetching, and final silicon dioxide thickness is 1.5 μ m, and all the other are with embodiment 1.
Claims (6)
1. method of making multimode interference type optical coupler on insulating silicon material layer is characterized in that:
(1) be starting material with the silicon on the insulation course, the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course in (100) crystal orientation;
(2) photoetching forms the bell-mouthed figure of input and output waveguide and they and the transition of multimode district;
(3) corrode silicon in the anisotropic etchant, etching time is controlled at the single mode condition that corrosion depth satisfies ridge waveguide;
(4) remove silicon dioxide;
(5) the silicon materials surface thermal oxide layer of silicon dioxide once more on the insulation course;
(6) the secondary photoetching forms the figure in multimode waveguide district, corrode silicon dioxide;
(7) corrode silicon in anisotropic etchant, etching time is controlled at till silicon materials upper strata silicon on the insulation course corrodes;
(8) remove silicon dioxide layer;
(9) final silicon materials surface heat oxidation layer of silicon dioxide on insulation course.
2. by the described method of on insulating silicon material layer, making multimode interference type optical coupler of claim 1, it is characterized in that the thickness of the silicon materials surface heat oxidation layer of silicon dioxide on the insulation course in (100) crystal orientation is between 150nm-300nm.
3. by the described method of on insulating silicon material layer, making multimode interference type optical coupler of claim 1, it is characterized in that, the sidewall of the input and output waveguide that described photoetching forms forms by anisotropic etch silicon materials on the insulation course in (100) crystal orientation perpendicular to the surface the 100} face, and pyramidal structure by in the corrosion from { the 111} crystal face formation that stops.
4. by the described method of on insulating silicon material layer, making multimode interference type optical coupler of claim 1, it is characterized in that, described input and output waveguide is the ridge waveguide that satisfies single mode condition, and the multimode waveguide district is a rectangular waveguide, and sidewall is vertical and waveguide sidewalls is very smooth; The junction of waveguide of multimode district and input and output waveguide is the trumpet type zone of transition that forms automatically in corrosion.
5. by claim 1 or 3 described methods of on insulating silicon material layer, making multimode interference type optical coupler, it is characterized in that, anisotropic etchant is the potassium hydroxide solution of mass concentration at 30%-60%, or mass concentration is at the tetramethyl ammonium hydroxide solution of 5%-40%.
6. by the described method of on insulating silicon material layer, making multimode interference type optical coupler of claim 1, it is characterized in that the silicon materials surface heat oxidation layer of silicon dioxide thickness on the final insulation course is 1-2 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011134496A CN1153076C (en) | 2001-06-15 | 2001-06-15 | Method of making multimode interference type optical coupler on insulating silicon material layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011134496A CN1153076C (en) | 2001-06-15 | 2001-06-15 | Method of making multimode interference type optical coupler on insulating silicon material layer |
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| Publication Number | Publication Date |
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| CN1318762A CN1318762A (en) | 2001-10-24 |
| CN1153076C true CN1153076C (en) | 2004-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB011134496A Expired - Fee Related CN1153076C (en) | 2001-06-15 | 2001-06-15 | Method of making multimode interference type optical coupler on insulating silicon material layer |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101587207B (en) * | 2008-05-21 | 2010-12-29 | 中国科学院半导体研究所 | Method for improving efficiency of coupling waveguide and fiber |
| CN108089263A (en) * | 2017-12-29 | 2018-05-29 | 山东明灿光电科技有限公司 | A kind of multi-mode-single mode hybrid optical splitter and preparation method thereof |
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2001
- 2001-06-15 CN CNB011134496A patent/CN1153076C/en not_active Expired - Fee Related
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