CN118116822A

CN118116822A - Semiconductor device and control method thereof

Info

Publication number: CN118116822A
Application number: CN202211475301.0A
Authority: CN
Inventors: 谷康康; 杨哲闵; 王建忠
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2022-11-23
Filing date: 2022-11-23
Publication date: 2024-05-31

Abstract

The present application relates to a semiconductor device and a control method thereof. The semiconductor device comprises a process chamber for performing a process; the waste liquid collecting chamber is connected with the process chamber and is used for collecting waste liquid generated in the process chamber; the pressure detection device is connected with the waste liquid collection chamber and is used for detecting the pressure in the waste liquid collection chamber; the pipeline device is connected with the waste liquid collecting chamber and is used for pipeline connection; and the control device is used for controlling the working mode of the pipeline device according to the detection result of the pressure detection device so as to block the waste liquid collecting chamber from flowing backwards to the process chamber. The embodiment of the application can reduce the defects in the wafer products processed in the processing chamber, thereby providing the product yield.

Description

Semiconductor device and control method thereof

Technical Field

The present application relates to the field of semiconductor technologies, and in particular, to a semiconductor device and a control method thereof.

Background

Semiconductor devices are an essential part of semiconductor process generation. To ensure that semiconductor processing may be performed in a clean environment to ensure product quality, semiconductor devices typically include a process chamber. In performing semiconductor processing, wafers are typically placed in a process chamber for processing.

However, with the development of semiconductor technology, the requirements on product quality are further improved, and the wafer products processed by the existing semiconductor devices still have many defects, so that the problem of difficulty in meeting the application requirements is solved.

Disclosure of Invention

Based on the above, the embodiment of the application provides a semiconductor device and a control method thereof, which can reduce defects in wafer products processed in a process chamber, thereby providing product yield.

A semiconductor device, characterized by comprising:

A process chamber for performing a process;

The waste liquid collecting chamber is connected with the process chamber and is used for guiding out waste liquid generated in the process chamber;

The pressure detection device is connected with the waste liquid collection chamber and is used for detecting the air pressure in the waste liquid collection chamber;

the pipeline device is connected with the waste liquid collecting chamber and is used for pipeline connection;

And the control device is used for changing the working mode of the pipeline device when the pressure detection device detects that the air pressure in the waste liquid collection chamber is greater than a first threshold value so as to block the waste liquid collection chamber from flowing backwards to the process chamber.

In one embodiment, the semiconductor device further includes:

A liquid supply line connected to the process chamber for supplying a processing liquid to the process chamber;

the back suction device is connected with the liquid supply pipeline and is used for back sucking the residual treatment liquid in the liquid supply pipeline when the supply of the treatment liquid to the process chamber is stopped;

The back suction device comprises a gas-liquid separator which is connected with the waste liquid collecting chamber and is used for discharging waste gas accompanied by back suction of the residual treatment liquid from the liquid supply pipeline to the waste liquid collecting chamber.

In one of the embodiments of the present invention,

The pipeline device comprises a waste liquid collecting pipeline, and the process chamber is connected to the waste liquid collecting chamber through the waste liquid collecting pipeline;

The waste liquid collecting pipeline comprises a switch valve;

when the pressure detection device detects that the air pressure in the waste liquid collection chamber is larger than a first threshold value, the control device changes the working mode of the pipeline device, wherein the working mode comprises the following steps: and controlling the switch valve to be closed.

In one of the embodiments of the present invention,

The pipeline device comprises an exhaust pipeline for exhausting the waste gas in the gas-liquid separator and the waste liquid collecting chamber;

The semiconductor device further comprises an exhaust gas treatment device connected with the exhaust pipeline and used for treating the exhaust gas exhausted by the exhaust pipeline;

The exhaust pipeline comprises a first sub-exhaust pipe, a second sub-exhaust pipe, a third sub-exhaust pipe and a switching valve, the first sub-exhaust pipe is used for connecting the waste liquid collecting chamber and the waste liquid treatment device, the second sub-exhaust pipe is used for connecting the gas-liquid separator and the waste liquid collecting chamber, the third sub-exhaust pipe is used for connecting the gas-liquid separator and the waste gas treatment device, and the switching valve is used for switching and opening the second sub-exhaust pipe and the third sub-exhaust pipe;

In the initial state, the control device controls the switching valve to open the second sub-exhaust pipe and close the third sub-exhaust pipe, so that the waste gas in the gas-liquid separator and the waste gas in the waste liquid collection chamber are uniformly discharged to the waste gas treatment device through the first sub-exhaust pipe;

When the pressure detection device detects that the air pressure in the waste liquid collection chamber is larger than a first threshold value, the control device changes the working mode of the pipeline device, wherein the working mode comprises the following steps: the control device controls the switching valve to open the third sub-exhaust pipe and close the second sub-exhaust pipe, so that the waste gas in the gas-liquid separator is directly discharged to the waste gas treatment device through the third sub-exhaust pipe.

In one embodiment, the switching valve member comprises a three-way valve member.

In one embodiment, the semiconductor device further comprises an exhaust gas treatment device, the gas-liquid separator is disconnected from the waste liquid collecting chamber, and the gas-liquid separator is connected with the exhaust gas treatment device through a third sub exhaust pipe for directly discharging exhaust gas to the exhaust gas treatment device.

In one of the embodiments of the present invention,

The waste liquid collecting pipeline comprises a switch valve;

In one embodiment, the on-off valve includes a solenoid valve member, and the control device is electrically connected to the solenoid valve member.

In one of the embodiments of the present invention,

The processing chamber is internally provided with an operation groove and an idle groove, the operation groove is internally provided with a wafer carrying platform, and the idle groove is positioned outside the operation groove and is arranged at intervals with the operation groove;

The waste liquid collecting pipeline comprises an operation tank pipeline and an idle tank pipeline, one end of the operation tank pipeline is connected with the operation tank, the other end of the operation tank pipeline is connected with the waste liquid collecting chamber, one end of the idle tank pipeline is connected with the idle tank, and the other end of the idle tank pipeline is connected with the waste liquid collecting chamber.

In one of the embodiments of the present invention,

The pipeline device comprises a first sub-exhaust pipe, and the first sub-exhaust pipe is used for connecting the waste liquid collecting chamber and the waste gas treatment device;

When the pressure detection device detects that the air pressure in the waste liquid collection chamber is larger than a first threshold value, the control device changes the working mode of the pipeline device, wherein the working mode comprises the following steps: and increasing the pumping power of the first sub-exhaust pipeline.

A control method of a semiconductor device, comprising:

detecting the air pressure in the waste liquid collection chamber by a pressure detection device;

when the pressure detection device detects that the air pressure in the waste liquid collection chamber is larger than a first threshold value, changing the working mode of the pipeline device so as to block the waste liquid collection chamber from flowing backwards to the process chamber;

Wherein, the pipeline device is connected with the waste liquid collecting chamber.

In one embodiment, when the pressure detecting device detects that the air pressure in the waste liquid collecting chamber is greater than a first threshold, changing the working mode of the pipeline device includes:

and closing a waste liquid collecting pipeline between the process chamber and the waste liquid collecting pipeline when the pressure detection device detects that the air pressure in the waste liquid collecting chamber is larger than a first threshold value.

In one of the embodiments of the present invention,

In the initial state, the waste gas in the gas-liquid separator is discharged to the waste liquid collecting chamber and is uniformly discharged to the waste gas treatment device together with the waste gas in the waste liquid collecting chamber;

When the pressure detection device detects that the air pressure in the waste liquid collection chamber is greater than a first threshold value, changing the working mode of the pipeline device comprises the following steps:

And when the pressure detection device detects that the air pressure in the waste liquid collection chamber is greater than a first threshold value, stopping discharging the waste gas in the gas-liquid separator to the waste liquid collection chamber, and directly discharging the waste gas in the gas-liquid separator to the waste gas treatment device.

In one embodiment, when the pressure detecting device detects that the air pressure in the waste liquid collecting chamber is greater than a first threshold value, the exhaust gas in the gas-liquid separator is stopped from being discharged to the waste liquid collecting chamber, and the exhaust gas in the gas-liquid separator is directly discharged to the exhaust gas treatment device, and then the method further comprises:

When the pressure detection device detects that the air pressure in the waste liquid collection chamber is smaller than a second threshold value, the waste gas in the gas-liquid separator is stopped from being directly discharged to the waste gas treatment device, the waste gas in the gas-liquid separator is discharged to the waste liquid collection chamber, and the waste gas in the waste liquid collection chamber are uniformly discharged to the waste gas treatment device, and the second threshold value is smaller than the first threshold value.

And when the pressure detection device detects that the air pressure in the waste liquid collection chamber is larger than a first threshold value, increasing the air pumping power of the waste liquid collection chamber.

According to the semiconductor device and the control method thereof, the pressure in the waste liquid collecting chamber is detected through the pressure detection device, and the working mode of the pipeline device is controlled according to the pressure in the waste liquid collecting chamber so as to prevent the waste liquid collecting chamber from flowing backwards to the process chamber, so that defects in wafer products processed in the process chamber can be effectively reduced, and the product yield is improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments or the conventional techniques of the present application, the drawings required for the descriptions of the embodiments or the conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.

Fig. 1,2 and 5 are block diagrams of semiconductor devices in various embodiments;

fig. 3, fig. 4, and fig. 6 are schematic structural diagrams of semiconductor devices in different embodiments;

Fig. 7 is a flow chart illustrating a control method of the semiconductor device in one embodiment.

Reference numerals illustrate: 100-process chambers, 110-working tanks, 120-idle tanks, 130-wafer carriers, 200-waste liquid collection chambers, 300-pressure detection devices, 400-pipeline devices, 410-waste liquid collection pipelines, 410 a-working tank pipelines, 410 b-idle tank pipelines, 411-switching valves, 420-exhaust pipelines, 421-first sub-exhaust pipes, 422-second sub-exhaust pipes, 423-third sub-exhaust pipes, 424-switching valves, 500-control devices, 600-suck-back devices, 610-gas-liquid separators, 620-suck-back devices, 621-gas inlets, 622-liquid inlets, 623-exhaust ports, 700-liquid supply pipelines, 800-exhaust gas treatment devices.

Detailed Description

In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Embodiments of the application are illustrated in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

It will be understood that the terms first, second, etc. as used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another element.

Spatially relative terms, such as "under", "below", "beneath", "under", "above", "over" and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. Furthermore, the device may also include an additional orientation (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.

It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or be connected to the other element through intervening elements. Further, "connection" in the following embodiments should be understood as "electrical connection", "communication connection", and the like if there is transmission of electrical signals or data between objects to be connected.

As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," and/or the like, specify the presence of stated features, integers, steps, operations, elements, components, or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof. Also, the term "and/or" as used in this specification includes any and all combinations of the associated listed items.

As described in the background art, the wafer products processed by the existing semiconductor devices still have many defects, which are difficult to meet the application requirements.

The inventors have found that the reason for the occurrence of the above problems is:

In some semiconductor devices, such as cleaning etch equipment, a waste collection chamber is provided for collecting waste generated within the process chamber. At the same time, the waste collection chamber is typically also connected to a device outside the process chamber to effectively collect the gases and/or liquids in the semiconductor device.

In order to collect the waste liquid in the process chamber in time, some pipeline valves between the process chamber and the waste liquid collecting chamber are in a normally open state.

However, since the waste liquid collection chamber is also connected to other devices (such as a gas-liquid separator) outside the process chamber, the gas and/or liquid in the other devices may be discharged into the waste liquid collection chamber, which may cause an increase in the gas pressure in the waste liquid collection chamber, thereby causing a phenomenon that the waste gas and/or waste liquid flows backward into the process chamber. At this point, defects (e.g., global problems (Edge mode particle issue)) may occur in the wafer products processed in the process chamber, thereby affecting product yield.

In view of the above, embodiments of the present application provide a semiconductor device and a control method thereof to reduce defects (such as global problems (Edge mode particle issue)) in wafer products processed in a process chamber, thereby providing product yield.

The semiconductor device provided by the embodiment of the application can comprise any one or more of cleaning equipment, etching equipment and cleaning etching equipment.

In one embodiment, referring to FIG. 1, a semiconductor apparatus is provided that includes a process chamber 100, a waste collection chamber 200, a pressure detection device 300, a conduit device 400, and a control device 500.

The process chamber 100 is used to perform a process.

By way of example, the process chamber 100 may include, but is not limited to, any one or more of a cleaning chamber, an etching chamber, and a cleaning etching chamber. A cleaning process may be performed within the cleaning chamber. An etching process may be performed within the etching chamber. The cleaning process and the etching process can be performed in the cleaning etching chamber. During the cleaning process and the etching process, different treatment liquids can be introduced into the cleaning etching chamber.

The waste collection chamber 200 is coupled to the process chamber 100 for collecting waste generated within the process chamber 100.

When a process is performed in the process chamber 100, a processing liquid may be sprayed to a wafer placed therein through the liquid supply line 700. The processing liquid may include a cleaning liquid or an etching liquid, etc. For example, when a cleaning process is performed within the process chamber 100, a cleaning solution may be sprayed onto a wafer placed therein.

After the reaction on the wafer surface, the processing liquid flows away from the wafer surface. Meanwhile, when the processing liquid is sprayed to the wafer placed therein, a part of the processing liquid may be sprayed outside the wafer. The waste generated within the process chamber 100 may include the liquid flowing away from the wafer surface as described above, as well as the process liquid sprayed out of the wafer.

The waste liquid collection chamber 200 may be connected to the process chamber 100 through a pipe so that waste liquid generated in the process chamber 100 may be collected.

Each process chamber 100 may be connected to one waste collection chamber 200 and different process chambers 100 may be connected to different waste collection chambers 200. And the waste collection chambers 200 connected to different process chambers 100 may be divided into several groups. The exhaust lines of waste collection chambers 200 located in the same group may be connected together. Therefore, in the same set of waste collection chambers 200, when one waste collection chamber 200 is connected to the process chamber 100 due to the increased pressure, the other waste collection chambers 200 may be affected to cause a backflow problem.

The pressure detecting means 300 is connected to the waste liquid collecting chamber 200 so as to detect the pressure in the waste liquid collecting chamber 200. When the pressure detection means 300 detects the pressure in the waste liquid collection chamber 200, the pressure information may be transmitted to the control means 500.

The piping device 400 is connected to the waste liquid collecting chamber 200 for piping connection.

The control device 500 may be electrically connected to the pressure detecting device 300 to receive the pressure information in the waste liquid collecting chamber 200 transmitted from the pressure detecting device 300.

When the pressure detecting device 300 detects that the air pressure in the waste liquid collecting chamber 200 is greater than the first threshold, the control device 500 may change the operation mode of the piping device 400 to block the waste liquid collecting chamber 200 from flowing backward to the process chamber 100.

The control device 500 may compare the pressure in the waste liquid collection chamber 200 with the first threshold value after receiving the pressure information in the waste liquid collection chamber 200 transmitted from the pressure detecting device 300. When the pressure in the waste collection chamber 200 is greater than the first threshold, the control device 500 may control the line set 400 to change the operation mode, thereby blocking the backflow of the waste collection chamber 200 into the process chamber 100.

Wherein the first threshold may be determined based on a pressure applied within the process chamber 100. For example, the first threshold may be equal to the pressure applied within the process chamber 100. Alternatively, the first threshold may be less than the pressure applied within the process chamber 100 to ensure that the waste gas and/or waste liquid within the waste collection chamber 200 does not flow back into the process chamber 100.

Meanwhile, the control device 500 may control the operation mode of the pipe device 400, and the control device 500 may directly control the waste liquid collecting pipe 410 between the waste liquid collecting chamber 200 and the process chamber 100, or may control other pipes (such as the exhaust pipe 420) connected to the waste liquid collecting chamber 200 by the control device 500, which is not limited herein.

In this embodiment, the pressure detecting device 300 is configured to effectively detect the pressure in the waste liquid collecting chamber 200, and the control device 500 is configured to control the operation mode of the pipeline device 400 according to the pressure in the waste liquid collecting chamber 200, so as to block the waste liquid collecting chamber 200 from flowing backward to the process chamber 100, thereby effectively reducing defects (such as global problems (Edge mode particle issue)) in the wafer products processed in the process chamber 100, and providing the product yield.

In one embodiment, referring to fig. 2, the semiconductor apparatus further includes a suck-back device 600 and a fluid supply line 700.

The fluid supply line 700 is coupled to the process chamber 100 for supplying a processing fluid to the process chamber 100.

The suck-back device 600 is connected to the liquid supply line 700 for sucking back residual processing liquid in the liquid supply line 700 when the supply of processing liquid to the process chamber 100 is stopped.

Referring to fig. 3, the fluid supply 700 may include a nozzle. The fluid supply line 700 is positioned within the process chamber 100 so that the process fluid may be sprayed onto the wafer within the process chamber 100. For example, the liquid supply pipeline 700 may spray a cleaning liquid formed by mixing sulfuric acid (H ₂SO₄) and hydrogen peroxide (H ₂O₂).H₂SO₄ and H ₂O₂ according to a certain ratio, so that the surface of the wafer may be cleaned.

The back suction device 600 may include a gas-liquid separator 610. In addition, the suck-back device 600 may further include a suck-back 620.

The suck-back unit 620 is used for sucking back the processing liquid. After the liquid supply line 700 ends the spraying of the processing liquid, a portion of the processing liquid still exists in the sprayed line, which may cause the processing liquid to drop on the wafer surface, thereby causing adverse effects. The suck-back unit 620 is opened when the liquid supply line 700 ends the spraying of the process liquid, and can suck back the process liquid existing in the spraying line effectively, thereby preventing the process liquid from being dropped on the wafer surface.

When the liquid supply line 700 sprays a plurality of process liquids, one suck-back 620 may be provided for each process liquid. For example, when the supply lines 700 spray H ₂SO₄ and H ₂O₂, two suckers 620 may be provided to suck back H ₂SO₄ and H ₂O₂, respectively.

As an example, the back suction 620 may include an air inlet, a liquid inlet, and a discharge. The gas inlet is used for introducing gas, such as Compressed Dry Air (CDA). The fluid inlet may be connected to fluid supply line 700 for absorbing a treatment fluid (e.g., H ₂SO₄ or H ₂O₂). The exhaust port is used to exhaust the gas and liquid mixture that passes into the chamber of the back aspirator 620.

During the back suction, the air inlet may be filled with compressed dry air, thereby forming a low pressure environment in the chamber of the back suction device 620, so that the liquid inlet may suck the treatment liquid in the spray line of the liquid supply line 700 into the chamber of the back suction device 620. Then, the mixture of the compressed dry gas introduced into the chamber of the back suction unit 620 and the sucked process liquid may be discharged through the discharge port.

The gas-liquid separator 610 is connected to the back suction unit 620, and may be specifically connected to a discharge port of the back suction unit 620, so as to receive a mixture of the compressed dry gas and the processing liquid discharged from the discharge port. Meanwhile, the gas-liquid separator 610 may perform gas-liquid separation of the mixture of the received compressed dry gas and the process liquid.

Meanwhile, as an example, the gas-liquid separator 610 may be further connected to a cooling device such that the separated liquid flows to the cooling device to be cooled, and then may flow to other waste liquid treatment devices to be treated through the cooling device.

Also, the gas-liquid separator 610 may be connected to the waste liquid collecting chamber 200, and the separated gas may be discharged to the waste liquid collecting chamber 200. The separated gas may be an acid gas. The acid gas may be, for example, a compressed dry gas with small droplets of sulfuric acid.

To ensure that the suck-back effect of the suck-back 620 is good, the pressure in the chamber of the suck-back 620 can be adjusted to be low. At this time, the pressure inside the waste liquid collection chamber 200 may be too high, so that the acid gas separated by the gas-liquid separator 610 may flow back into the process chamber 100 along the pipeline of the switch valve after reaching the waste liquid collection chamber 200, thereby polluting the process chamber 100 and further forming defects on the wafer products processed in the process chamber.

At this time, the pressure detecting device 300 is provided to effectively detect the pressure in the waste liquid collecting chamber 200, and the control device 500 is provided to control the operation mode of the pipeline device 400 according to the pressure in the waste liquid collecting chamber 200, so as to effectively block the waste liquid collecting chamber 200 from flowing backward to the process chamber 100, thereby effectively reducing the defects in the wafer product processed in the process chamber 100, and providing the product yield.

In one embodiment, with continued reference to FIG. 3, line set 400 includes waste collection line 410. The waste collection line 410 is connected to the process chamber 100 at one end and to the waste collection chamber 200 at the other end. That is, the waste liquid collection line 410 is a line connecting the process chamber 100 and the waste liquid collection chamber 200.

The waste liquid collection line 410 includes an on-off valve 411. The switching valve 411 is used to switch the waste liquid collection line 410. When the switching valve 411 is opened, the process chamber 100 and the waste liquid collection chamber 200 communicate through the waste liquid collection line 410. When the switching valve 411 is closed, the process chamber 100 and the waste liquid collection chamber 200 are disconnected. In the initial state, the on-off valve 411 is in a normally open state.

The control device 500 is used for controlling the switch valve 411 to switch according to the detection result of the pressure detection device 300.

When the pressure detecting means 300 detects that the air pressure in the waste liquid collecting chamber 200 is greater than the first threshold value, the control means 500 changes the operation mode of the line means 400 including: the switching valve 411 is controlled to be closed, thereby blocking the waste liquid collection chamber 200 from flowing backward toward the process chamber 100.

In this embodiment, the control device 500 controls the switch valve 411 to switch, so as to directly control the pipeline (waste liquid collecting pipeline 410) between the process chamber 100 and the waste liquid collecting chamber 200, and interrupt the waste gas backflow path in the waste liquid collecting chamber 200, so that the waste gas backflow of the waste liquid collecting chamber 200 to the process chamber 100 can be effectively blocked.

In one embodiment, referring to fig. 4, the semiconductor apparatus further comprises an exhaust treatment device 800 for performing exhaust treatment.

Meanwhile, the line set 400 includes an exhaust line 420. The exhaust line 420 is used to exhaust the exhaust gases in the ejector 620 and the waste collection chamber 200. The exhaust gas treatment device 800 is connected to the exhaust pipe 420 and is used for treating the exhaust gas discharged from the exhaust pipe 420.

The exhaust line 420 includes a first sub-exhaust pipe 421, a second sub-exhaust pipe 422, and a third sub-exhaust pipe 423, and a switching valve element 424. The first sub-exhaust pipe 421 is used to connect the waste liquid collection chamber 200 with the exhaust treatment device 800. The second sub-exhaust pipe 422 is used to connect the gas-liquid separator 610 with the waste liquid collection chamber 200. The third sub exhaust pipe 423 is used to connect the gas-liquid separator 610 and the exhaust gas treatment device 800. The switching valve 424 is used for switching and opening the second sub-exhaust pipe 422 and the third sub-exhaust pipe 423, so that the gas-liquid separator 610 switches and communicates the second sub-exhaust pipe 422 and the third sub-exhaust pipe 423.

As an example, the switch valve member 424 may include a three-way valve member.

The control device 500 is used for controlling the switching valve element 424 to switch according to the detection result of the pressure detection device 300.

In the initial state, the control device 500 may control the switching valve 424 to open the second sub-exhaust pipe 422 and close the third sub-exhaust pipe 423, so that the exhaust gas in the gas-liquid separator 610 and the exhaust gas in the waste liquid collecting chamber 200 are uniformly discharged to the exhaust gas treatment device 800 through the first sub-exhaust pipe 421.

The control device 500 may compare the pressure in the waste liquid collection chamber 200 with the first threshold value after receiving the pressure information in the waste liquid collection chamber 200 transmitted from the pressure detecting device 300. When the pressure in the waste liquid collection chamber 200 is greater than the first threshold, the switching valve 424 can be controlled to open the third sub-exhaust pipe 423 and close the second sub-exhaust pipe 422, so that the gas-liquid separator 610 is communicated with the waste gas treatment device 800, and the gas-liquid separator 610 is disconnected from the waste liquid collection chamber 200, thereby preventing the air pressure in the waste liquid collection chamber 200 from continuously increasing, and further blocking the backflow of the waste liquid collection chamber 200 into the process chamber 100.

At this time, when the pressure detecting means 300 detects that the air pressure in the waste liquid collecting chamber 200 is greater than the first threshold value, the control means 500 changes the operation mode of the line means 400 including: the control device 500 controls the switching valve member 424 to open the third sub-exhaust pipe 423 and close the second sub-exhaust pipe 422, so that the exhaust gas in the gas-liquid separator 610 is directly discharged to the exhaust gas treatment device 800 through the third sub-exhaust pipe 423.

In this embodiment, the control device 500 controls the switching valve 424 to switch, so that the waste liquid collection chamber 200 is blocked from flowing backward to the process chamber 100 by preventing the air pressure in the waste liquid collection chamber 200 from rising continuously. At this time, as an example, the line (waste liquid collecting line 410) between the process chamber 100 and the waste liquid collecting chamber 200 may be always in a normally open state, so that the waste liquid in the process chamber 100 can be discharged in real time.

In one embodiment, referring to fig. 5, the semiconductor apparatus further comprises an exhaust treatment device 800.

The gas-liquid separator 610 may be connected to the exhaust gas treatment device 800 through the third sub exhaust pipe 423 to directly discharge the exhaust gas to the exhaust gas treatment device 800. Meanwhile, the gas-liquid separator 610 is disconnected from the waste liquid collection chamber 200, i.e., no pipe connection exists between the gas-liquid separator 610 and the waste liquid collection chamber 200.

Referring to fig. 6, at this time, the semiconductor device may further include a liquid supply line 700. The liquid supply line 700 is used for spraying the processing liquid, and the suck-back device 620 is used for sucking back the processing liquid. The gas-liquid separator 610 is connected to the back suction unit 620 so as to separate a mixture of gas and liquid discharged from the back suction unit 620. The separated gas may be sour gas, which may then be directly discharged to the exhaust treatment device 800 for treatment.

At this time, the gas-liquid separator 610 does not discharge the exhaust gas into the waste liquid collecting chamber 200, so that the waste liquid collecting chamber 200 can be effectively prevented from increasing in air pressure due to receiving the exhaust gas discharged from the suck-back apparatus 600. Therefore, the waste liquid collection chamber 200 is also effectively prevented from flowing backward into the process chamber 100.

Meanwhile, since the waste liquid collecting chamber 200 may be increased in pressure for other reasons in addition to the pressure increase due to the exhaust gas discharged from the back suction device 600 (e.g., the acid gas discharged from the gas-liquid separator 610). For example, when a large amount of liquid is instantaneously discharged into the waste liquid collecting chamber 200, the air pressure of the waste liquid collecting chamber 200 is also increased. At this time, the waste liquid collection chamber 200 may also be caused to flow back to the process chamber 100 with acid gas, etc., thereby causing defects in the wafer products in the process chamber 100.

Therefore, at this time, the pressure detecting device 300 is provided to effectively detect the pressure in the waste liquid collecting chamber 200, and the control device 500 is provided to control the operation mode of the pipeline device 400 according to the pressure in the waste liquid collecting chamber 200, so as to effectively block the waste liquid collecting chamber 200 from flowing backward to the process chamber 100, thereby effectively reducing the defects in the wafer products processed in the process chamber 100, and providing the product yield.

As an example, referring to fig. 6, in this case, a line set 400 may be provided including a waste collection line 410. The process chamber 100 is connected to the waste collection chamber 200 by a waste collection line 410.

The waste liquid collection line 410 includes an on-off valve 411.

The switching valve 411 is used to switch the waste liquid collection line 410. When the switching valve 411 is opened, the process chamber 100 and the waste liquid collection chamber 200 communicate through the waste liquid collection line 410. When the switching valve 411 is closed, the process chamber 100 and the waste liquid collection chamber 200 are disconnected.

When the pressure detecting means 300 detects that the pressure in the waste liquid collecting chamber 200 is greater than the first threshold value, the control means 500 may control the switching valve 411 to be closed, thereby blocking the backflow of the waste liquid collecting chamber 200 to the process chamber 100.

That is, at this time, when the pressure detecting means 300 detects that the pressure in the waste liquid collecting chamber 200 is greater than the first threshold value, the control means 500 changes the operation mode of the line means 400 including: the control switch valve 411 is closed.

In one embodiment, when line set 400 includes waste collection line 410 and on-off valve 411, on-off valve 411 includes a solenoid valve. The control device 500 is electrically connected to the solenoid valve member so that a control signal can be sent to the solenoid valve member.

When the pressure within waste collection chamber 200 is greater than a first threshold, control device 500 may send a control signal to the solenoid valve member that causes the solenoid valve member to close. Upon receipt of the control signal, the solenoid valve may be pneumatically actuated to close.

When the pressure within waste collection chamber 200 is not greater than the first threshold, control device 500 may send a control signal to the solenoid valve member that causes the solenoid valve member to open. After receiving the control signal, the solenoid valve may not generate pneumatic force and thus open.

Of course, the on-off valve 411 may be another valve member, which is not limited to a solenoid valve member.

In one embodiment, referring to fig. 3 or fig. 4 or fig. 6, when the line apparatus 400 includes the waste liquid collecting line 410, the waste liquid collecting line 410 includes the working tank line 410a and the idle tank line 410b. The working tank line 410a and the idle tank line 410b may each be provided with an on-off valve 411.

A process chamber 100 may have a processing chamber 110 and a dummy chamber 120.

A wafer stage 130 may be disposed within the process chamber 110. The wafer stage 130 is used for placing a wafer.

When a process is performed in the process chamber 100, a processing liquid may be sprayed to a wafer placed on the wafer stage 130 through the liquid supply line 700. The processing liquid may include a cleaning liquid or an etching liquid, etc. After the reaction on the wafer surface, the processing liquid flows to the bottom of the working tank. At the same time, some of the processing liquid may be sprayed out of the wafer to the bottom of the process tank. While the bottom of the sump is connected to sump line 410 a. The operation tank line 410a has one end connected to the operation tank 110 and the other end connected to the waste liquid collection chamber 200, so that the waste liquid generated in the process chamber can be discharged to the waste liquid collection chamber 200 through the operation tank line 410 a.

Meanwhile, the idle groove 120 is located outside the working groove 110 and is spaced apart from the working groove 110. The bottom of the idle tank 120 is connected with an idle tank pipeline 410b, one end of the idle tank pipeline 410b is connected with the idle tank 120, and the other end is connected with the waste liquid collecting chamber 200.

The liquid supply line 700 in the process chamber 100 may not be disposed above the wafer stage 130, but may be disposed at a position offset from the wafer stage 130, and the idle slot 120 may be disposed below the position. When the supply line 700 is idle, it is usually dropped at a very slow rate, so that the spray line of the supply line 700 can be kept in normal use. The treatment liquid slowly dropped from the liquid supply line 700 at the time of idling may flow to the idling tank 120 and be discharged to the waste liquid collection chamber 200 through the idling tank line 410b connected to the idling tank 120.

At this time, when the pressure in the waste liquid collection chamber 200 is not greater than the first threshold value, the on-off valves 411 on the working tank line 410a and the idle tank line 410b may be in a normally open state.

When the pressure in the waste liquid collection chamber 200 is greater than the first threshold, the control device 500 may control the on/off valve 411 on the working channel 410a and/or the idle channel 410b to close, thereby preventing the waste liquid collection chamber 200 from flowing back the waste gas such as acid gas into the process chamber 100 through the working channel 410a and/or the idle channel 410 b.

In one embodiment, the plumbing device 400 includes a first sub-exhaust 421, the first sub-exhaust 421 connecting the waste collection chamber 200 with the exhaust treatment device 800.

When the pressure detecting device 300 detects that the air pressure in the waste liquid collecting chamber 200 is greater than the first threshold, the air pumping power of the first sub-exhaust pipe 421 can be increased, so that the pressure of the waste liquid collecting chamber 200 can be rapidly reduced, and the waste liquid collecting chamber 200 can be effectively prevented from flowing backward toward the process chamber 100.

At this time, when the pressure detecting means 300 detects that the air pressure in the waste liquid collecting chamber 200 is greater than the first threshold value, the control means 500 changes the operation mode of the line means 400 including: the pumping power to the first sub-exhaust line 421 is increased.

In one embodiment, referring to the drawings, there is also provided a control method of a semiconductor device, including:

Step S10, detecting the air pressure in the waste liquid collecting chamber 200 by the pressure detecting device 300;

step S20, when the pressure detecting device 300 detects that the air pressure in the waste liquid collecting chamber 200 is greater than the first threshold value, changing the working mode of the pipeline device 400 to block the waste liquid collecting chamber 200 from flowing backward to the process chamber 100;

wherein the line set 400 is connected to the waste liquid collection chamber 200.

In step S10, the pressure in the waste liquid collection chamber 200 can be detected by the pressure detecting device 300 connected thereto. Then, the detection result thereof may be obtained from the pressure detecting device 300, thereby obtaining the pressure in the waste liquid collecting chamber 200.

In step S20, the pressure within waste collection chamber 200 may first be compared to a first threshold. When the pressure in waste collection chamber 200 is greater than the first threshold, line set 400 may be controlled to change modes of operation, thereby blocking backflow of waste collection chamber 200 into process chamber 100.

Meanwhile, the control circuit 400 may be configured to directly control the waste liquid collecting circuit 410 between the waste liquid collecting chamber 200 and the process chamber 100 by the control device 500, or may be configured to control other circuits (such as the exhaust circuit 420) connected to the waste liquid collecting chamber 200 by the control device 500, which is not limited herein.

In this embodiment, the pressure detecting device 300 detects the air pressure in the waste liquid collecting chamber 200, and controls the operation mode of the pipeline device according to the pressure in the waste liquid collecting chamber 200 to block the waste liquid collecting chamber 200 from flowing backward to the process chamber, so that defects (such as global problem Edge mode particle issue) in the wafer product processed in the process chamber 100 can be effectively reduced, and the product yield is provided.

In one embodiment, step S20 includes:

In step S21, when the pressure detecting device 300 detects that the air pressure in the waste liquid collecting chamber 200 is greater than the first threshold value, the waste liquid collecting line 410 between the process chamber 100 and the waste liquid collecting line 200 is closed.

Waste collection line 410 may include an on-off valve 411. The switching valve 411 is used to switch the waste liquid collection line 410. When the switching valve 411 is opened, the process chamber 100 and the waste liquid collection chamber 200 communicate through the waste liquid collection line 410. When the switching valve 411 is closed, the process chamber 100 and the waste liquid collection chamber 200 are disconnected. In the initial state, the on-off valve 411 is in a normally open state.

Accordingly, the switch valve 411 may be closed to close the waste collection line 410 between the process chamber 100 and the waste collection line 200.

And when the pressure in the waste collection chamber 200 is greater than the first threshold, the switch valve 411 may be controlled to close, thereby blocking the waste collection chamber 200 from flowing backward to the process chamber 100.

In this embodiment, by directly controlling the line (waste liquid collection line 410) between the process chamber 100 and the waste liquid collection chamber 200, the waste gas backflow path in the waste liquid collection chamber 200 is interrupted, so that the waste gas backflow from the waste liquid collection chamber 200 to the process chamber 100 can be effectively blocked.

In one embodiment, at this time, step S20 includes:

In step S22, when the pressure detecting device 300 detects that the air pressure in the waste liquid collecting chamber 200 is greater than the first threshold value, the exhaust gas in the gas-liquid separator 610 is stopped from being discharged to the waste liquid collecting chamber 200, and the exhaust gas in the gas-liquid separator 610 is directly discharged to the exhaust gas treatment device 800.

At this time, the semiconductor apparatus may include the suck-back device 600 and the exhaust gas treatment device 800. The back suction device 600 may include a gas-liquid separator 610. The exhaust gas treatment device 800 is used for performing exhaust gas treatment.

Meanwhile, the line set 400 may include an exhaust line 420. The exhaust line 420 is used to exhaust the exhaust gas in the gas-liquid separator 620 and the waste liquid collection chamber 200.

The exhaust line 420 may include a first sub-exhaust pipe 421, a second sub-exhaust pipe 422, and a third sub-exhaust pipe 423, and a switch valve element 424. The first sub-exhaust pipe 421 is used to connect the waste liquid collection chamber 200 with the exhaust treatment device 800. The second sub-exhaust pipe 422 is used to connect the gas-liquid separator 610 with the waste liquid collection chamber 200. The third sub exhaust pipe 423 is used to connect the gas-liquid separator 610 and the exhaust gas treatment device 800. The switching valve 424 is used for switching and opening the second sub-exhaust pipe 422 and the third sub-exhaust pipe 423, so that the gas-liquid separator 610 switches and communicates the second sub-exhaust pipe 422 and the third sub-exhaust pipe 423.

In the initial state, the switching valve 424 may be controlled to open the second sub-exhaust pipe 422 and close the third sub-exhaust pipe 423, so that the exhaust gas in the gas-liquid separator 610 may be discharged to the waste liquid collecting chamber 200 and discharged to the exhaust gas treatment device 800 together with the exhaust gas in the waste liquid collecting chamber 200.

When the pressure detecting device 300 detects that the air pressure in the waste liquid collecting chamber 200 is greater than the first threshold value, the switching valve member 424 can be controlled to open the third sub-exhaust pipe 423 and close the second sub-exhaust pipe 422, so that the gas-liquid separator 610 is communicated with the waste gas treatment device 800, and the waste gas in the gas-liquid separator 610 is directly discharged to the waste gas treatment device 800; and at the same time, the gas-liquid separator 610 may be controlled to be disconnected from the waste liquid collecting chamber 200, so that the exhaust gas in the gas-liquid separator 610 stops being discharged to the waste liquid collecting chamber 200. At this time, the air pressure in the waste liquid collection chamber 200 can be prevented from being further increased, thereby blocking the backflow of the waste liquid collection chamber 200 into the process chamber 100.

In one embodiment, after step S22, further includes:

In step S30, when the pressure detecting device 300 detects that the air pressure in the waste liquid collecting chamber 200 is less than the second threshold value, the exhaust gas in the gas-liquid separator 610 stops being directly discharged to the exhaust gas treatment device 800, and the exhaust gas in the gas-liquid separator 610 is discharged to the waste liquid collecting chamber 200 and is uniformly discharged to the exhaust gas treatment device together with the exhaust gas in the waste liquid collecting chamber 200, and the second threshold value is less than the first threshold value.

At this time, after step S22, when the pressure detecting device 300 detects that the air pressure in the waste liquid collecting chamber 200 is less than the second threshold, the switching valve 424 may be controlled to reopen the second sub-exhaust pipe 422 and close the third sub-exhaust pipe 423, so as to effectively ensure that no backflow is caused after the second sub-exhaust pipe 422 is reopened.

In one embodiment, step S20 includes:

in step S23, when the pressure detecting device 300 detects that the air pressure in the waste liquid collection chamber 200 is greater than the first threshold value, the pumping power to the waste liquid collection chamber is increased.

By increasing the pumping power to the first sub-exhaust line 421, the pressure of the waste liquid collection chamber 200 can be rapidly reduced, thereby effectively preventing the waste liquid collection chamber 200 from flowing backward toward the process chamber 100.

It should be understood that, although the steps in the flowchart of fig. 7 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in fig. 7 may include a plurality of steps or stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily sequential, but may be performed in rotation or alternatively with at least a portion of the steps or stages in other steps or other steps.

Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, or the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory. By way of illustration, and not limitation, RAM can be in various forms such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), etc.

In the description of the present specification, reference to the term "one embodiment," "other embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims

1. A semiconductor device, characterized by comprising:

A process chamber for performing a process;

2. The semiconductor device according to claim 1, wherein the semiconductor device further comprises:

3. The semiconductor device according to claim 2, wherein,

The waste liquid collecting pipeline comprises a switch valve;

4. The semiconductor device according to claim 2, wherein,

5. The semiconductor device of claim 4, wherein the switching valve member comprises a three-way valve member.

6. The semiconductor apparatus according to claim 2, further comprising an exhaust gas treatment device, wherein the gas-liquid separator is disconnected from the waste liquid collection chamber, and wherein the gas-liquid separator is connected to the exhaust gas treatment device through a third sub-exhaust pipe for discharging exhaust gas directly to the exhaust gas treatment device.

7. The semiconductor device according to claim 6, wherein,

The waste liquid collecting pipeline comprises a switch valve;

8. A semiconductor device according to claim 3 or 7, wherein the switching valve includes a solenoid valve element, and the control means is electrically connected to the solenoid valve element.

9. A semiconductor device according to claim 3 or 7, wherein,

10. The semiconductor device according to claim 1, wherein,

11. A control method of a semiconductor device, characterized by comprising:

12. The method according to claim 11, wherein changing the operation mode of the piping means when the pressure detecting means detects that the air pressure in the waste liquid collecting chamber is greater than a first threshold value, comprises:

13. The method for controlling a semiconductor device according to claim 11, wherein,

14. The method according to claim 13, wherein when the pressure detecting means detects that the air pressure in the waste liquid collecting chamber is larger than a first threshold value, the discharging of the waste gas in the gas-liquid separator to the waste liquid collecting chamber is stopped, and after the waste gas in the gas-liquid separator is directly discharged to the waste gas treating means, further comprising:

15. The method according to claim 11, wherein changing the operation mode of the piping means when the pressure detecting means detects that the air pressure in the waste liquid collecting chamber is greater than a first threshold value, comprises: