CN118073194A - 一种再生项目加快去除不同工艺产生的氮化膜的方法 - Google Patents

一种再生项目加快去除不同工艺产生的氮化膜的方法 Download PDF

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CN118073194A
CN118073194A CN202410228426.6A CN202410228426A CN118073194A CN 118073194 A CN118073194 A CN 118073194A CN 202410228426 A CN202410228426 A CN 202410228426A CN 118073194 A CN118073194 A CN 118073194A
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regeneration
different processes
nitride film
mass
nitride films
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王刚
李顺
李林飞
韩五静
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Anhui Fulede Changjiang Semiconductor Material Co ltd
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Anhui Fulede Changjiang Semiconductor Material Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本发明一种再生项目加快去除不同工艺产生的氮化膜的方法针对使用不同酸碱腐蚀药液，从而去除不同工艺的氮化膜，更好的控制膜去除后的硅片表面面状态，从而降低了再生成本提高良率和产量。每一种药液与对氮化膜发生反应生成的物质可溶于水，不会污染药液和槽体，不对后续作业的硅片产生污染，且不会过度损伤硅基底，整个流程对硅基底的腐蚀量小于2um，提高再生清洗成功率，稳定硅片循环再生的次数。

Description

一种再生项目加快去除不同工艺产生的氮化膜的方法
技术领域
本发明涉及一种再生项目加快去除不同工艺产生的氮化膜的方法，通过使用不同腐蚀药液从而达到避免wafer硅基底过度损伤的前提下加快去除表面氮化膜的目的。
背景技术
氮化硅由于绝缘性好、耐高温、散热好，使其被广泛应用于半导体器件中，常被用做掩膜。但晶片背面会存在氮化硅，氮化硅会加剧晶片的应力状况，甚至会造成晶片的破裂，由于晶片这层额外介质的存在，会影响热电偶对硅片温度的准确监控，给后续工艺带来困扰，影响晶片的使用效果。
发明内容
本发明的目的在于提供一种再生项目加快去除不同工艺产生的氮化膜的方法，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：一种再生项目加快去除不同工艺产生的氮化膜的方法，去除晶圆表面氮化膜时，因为不同工艺原因可能在表面形成部分有机物质或者氮氧化物，此时使用HF对其直接进行腐蚀可能会影响腐蚀速度， HF之前使用混酸对其进行表面初步处理：
混酸溶液中，化学反应式如下所示：
Si3N4+4HF+9H2O=====3H2SiO3+4NH4F
Si3N4 + 12 HF ======= 3SiF4↑ + 4NH3↑
上述混酸酸性腐蚀液中HF的质量百分比浓度为49%，HNO3的质量百分比浓度为70%，CH3COOH的质量百分比浓度为98%；其组分的体积比为：HF：HNO3：CH3COOH=15～25：65～75：60～70。
与现有技术相比，本发明的有益效果是：本发明针对使用不同酸碱腐蚀药液，从而去除不同工艺的氮化膜，更好的控制膜去除后的硅片表面面状态，从而降低了再生成本提高良率和产量。每一种药液与对氮化膜发生反应生成的物质可溶于水，不会污染药液和槽体，不对后续作业的硅片产生污染，且不会过度损伤硅基底，整个流程对硅基底的腐蚀量小于2um，提高再生清洗成功率，稳定硅片循环再生的次数。
具体实施方式
下面将结合本发明实施例，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明提供一种技术方案：一种再生项目加快去除不同工艺产生的氮化膜的方法，其特征是：去除晶圆表面氮化膜时，因为不同工艺原因可能在表面形成部分有机物质或者氮氧化物，此时使用HF对其直接进行腐蚀可能会影响腐蚀速度， HF之前使用混酸对其进行表面初步处理：
混酸溶液中，化学反应式如下所示：
Si3N4+4HF+9H2O=====3H2SiO3+4NH4F
Si3N4 + 12 HF ======= 3SiF4↑ + 4NH3↑
上述混酸酸性腐蚀液中HF的质量百分比浓度为49%，HNO3的质量百分比浓度为70%，CH3COOH的质量百分比浓度为98%；其组分的体积比为：HF：HNO3：CH3COOH=15～25：65～75：60～70。
本发明针对使用不同酸碱腐蚀药液，从而去除不同工艺的氮化膜，更好的控制膜去除后的硅片表面面状态，从而降低了再生成本提高良率和产量。每一种药液与对氮化膜发生反应生成的物质可溶于水，不会污染药液和槽体，不对后续作业的硅片产生污染，且不会过度损伤硅基底，整个流程对硅基底的腐蚀量小于2um，提高再生清洗成功率，稳定硅片循环再生的次数。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。

Claims (1)

1.一种再生项目加快去除不同工艺产生的氮化膜的方法，其特征是：去除晶圆表面氮化膜时，因为不同工艺原因可能在表面形成部分有机物质或者氮氧化物，此时使用HF对其直接进行腐蚀可能会影响腐蚀速度， HF之前使用混酸对其进行表面初步处理：
混酸溶液中，化学反应式如下所示：
Si3N4+4HF+9H2O=====3H2SiO3+4NH4F
Si3N4 + 12 HF ======= 3SiF4↑ + 4NH3↑
上述混酸酸性腐蚀液中HF的质量百分比浓度为49%，HNO3的质量百分比浓度为70%，CH3COOH的质量百分比浓度为98%；其组分的体积比为：HF：HNO3：CH3COOH=15～25：65～75：60～70。
CN202410228426.6A 2024-02-29 2024-02-29 一种再生项目加快去除不同工艺产生的氮化膜的方法 Pending CN118073194A (zh)

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