CN118039721A - Solar cell and method for producing solar cell - Google Patents
Solar cell and method for producing solar cell Download PDFInfo
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- CN118039721A CN118039721A CN202410264833.2A CN202410264833A CN118039721A CN 118039721 A CN118039721 A CN 118039721A CN 202410264833 A CN202410264833 A CN 202410264833A CN 118039721 A CN118039721 A CN 118039721A
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 108
- 238000002161 passivation Methods 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 19
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000005641 tunneling Effects 0.000 description 10
- 239000000969 carrier Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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Abstract
The application discloses a solar cell and a preparation method of the solar cell, and belongs to the technical field of photovoltaic cells. The disclosed solar cell includes a substrate layer having a first surface facing light and a second surface opposite the first surface; the intrinsic amorphous silicon layer is arranged on the first surface; the doped amorphous silicon layer is arranged on one side of the intrinsic amorphous silicon layer, which is away from the substrate layer; and the passivation layer is arranged on the second surface. The scheme can solve the problem that the solar cell related to the related technology has low cell conversion efficiency.
Description
Technical Field
The application belongs to the technical field of photovoltaic cells, and particularly relates to a solar cell and a preparation method of the solar cell.
Background
With the rapid development of solar cells, there is a growing demand for solar cell conversion efficiency, and solar cells generally include TOPCon (Tunnel Oxide Passivated Contact, tunnel oxide passivation contact) cells and HIT (amorphous silicon crystal Heterojunction with intrinsic thin Layer) cells.
However, for TOPCon cells, this tends to result in lower cell conversion efficiency for TOPCon cells, due to a series of problems such as cell front recombination loss, optical loss, front transmission loss, bulk recombination loss, cell back transmission loss, and back recombination loss; in the case of HIT cells, the front surface is formed of an amorphous silicon layer, and the amorphous silicon layer is used as a semiconductor, so that parasitic absorption is serious, which easily causes the HIT cells to be not dominant in terms of short-circuit current, and thus, the cell conversion efficiency of the HIT cells is low.
In summary, the solar cell related to the related art has a problem of low cell conversion efficiency.
Disclosure of Invention
The application discloses a solar cell and a preparation method of the solar cell, which are used for solving the problem that the solar cell related to the related technology has lower cell conversion efficiency.
In order to solve the technical problems, the application adopts the following technical scheme:
A solar cell, comprising:
A substrate layer having a first surface facing light and a second surface opposite the first surface;
The intrinsic amorphous silicon layer is arranged on the first surface;
the doped amorphous silicon layer is arranged on one side of the intrinsic amorphous silicon layer, which is away from the substrate layer;
And the passivation layer is arranged on the second surface.
A method for manufacturing a solar cell, applied to the solar cell described above, the method for manufacturing a solar cell comprising:
Depositing the intrinsic amorphous silicon layer on the first surface of the substrate layer;
Depositing the doped amorphous silicon layer on a side of the intrinsic amorphous silicon layer facing away from the substrate layer;
depositing the passivation layer on the second surface of the substrate layer.
The technical scheme adopted by the application can achieve the following beneficial effects:
In the application, the intrinsic amorphous silicon layer is arranged between the first surface of the substrate layer and the doped amorphous silicon layer, namely, the intrinsic amorphous silicon layer is inserted between the formed PN junctions for surface passivation, so that the solar cell obtains higher open-circuit voltage, the cell conversion efficiency is further improved, and the passivation layer arranged on the second surface of the substrate layer can compensate the parasitic absorption of the doped amorphous silicon layer and the intrinsic amorphous silicon layer, thereby obtaining good short-circuit current, and further improving the cell conversion efficiency. Therefore, the solar cell disclosed by the application can solve the problem of low cell conversion efficiency of the solar cell related to the related technology.
Drawings
Fig. 1 is a schematic cross-sectional view of a first solar cell according to an embodiment of the present application;
fig. 2 is a schematic cross-sectional view of a second solar cell according to an embodiment of the present application;
FIG. 3 is a schematic cross-sectional view of a third solar cell according to an embodiment of the present application;
Fig. 4 and fig. 5 are schematic flow diagrams of a method for manufacturing a solar cell according to an embodiment of the present application.
Reference numerals illustrate:
100-a substrate layer, 110-a first surface, 120-a second surface;
200-intrinsic amorphous silicon layer;
300-doping an amorphous silicon layer;
400-passivation layer, 410-tunneling oxide layer, 420-doped polysilicon layer;
510-a first anti-reflective layer, 520-a second anti-reflective layer;
610-first electrode, 620-second electrode;
710-first conductive layer, 720-second conductive layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The solar cell disclosed by the embodiment of the application is described in detail below through specific embodiments and application scenes thereof with reference to the accompanying drawings.
Referring to fig. 1 to 5, the present application discloses a solar cell including a substrate layer 100, an intrinsic amorphous silicon layer 200, a doped amorphous silicon layer 300, and a passivation layer 400.
The substrate layer 100 is the basic structure of a solar cell, and the substrate layer 100 is typically an N-type silicon substrate, the substrate layer 100 has a first surface 110 facing the light and a second surface 120 opposite to the first surface 110, i.e. the first surface 110 is the front side of the solar cell and is for receiving solar light, and the second surface 120 is the back side of the solar cell.
The intrinsic amorphous silicon layer 200 is undoped amorphous silicon, the intrinsic amorphous silicon layer 200 is deposited on the substrate layer 100, and is specifically disposed on the first surface 110, the doped amorphous silicon layer 300 is a doped P-type amorphous silicon layer, and the doped amorphous silicon layer 300 is deposited on the intrinsic amorphous silicon layer 200, and is specifically disposed on a side of the intrinsic amorphous silicon layer 200 facing away from the substrate layer 100, i.e., the doped amorphous silicon layer 300, the intrinsic amorphous silicon layer 200 and the substrate layer 100 are sequentially contacted, thereby forming a PN junction, and the intrinsic amorphous silicon layer 200 and the doped amorphous silicon layer 300 are formed by plasma-assisted chemical vapor deposition.
The passivation layer 400 is disposed on the second surface 120, and the passivation layer 400 can realize selective passage of carriers, so that multiple carriers can penetrate the passivation layer 400, i.e., electrons can penetrate the passivation layer 400, while fewer carriers can be blocked, i.e., holes can be blocked, thereby realizing passivation contact of the second surface 120 of the solar cell, and improving the conversion efficiency of the cell.
It can be seen that the present application implants the front surface structure of the HIT cell to the front surface of TOPcon cells, i.e., implants the doped amorphous silicon layer 300 and the intrinsic amorphous silicon layer 200 of the HIT cell to the first surface 110 of the substrate layer 100 of TOPcon cells, which solves the problem of the front surface loss of the TOPCon cells on the front surface of the HIT cell, so that the solar cell can obtain a higher open circuit voltage, which is expected to reach 740mV, while the unidirectional tunneling function of the passivation layer 400 of the TOPCon cell can compensate for the parasitic absorption of the doped amorphous silicon layer 300 and the intrinsic amorphous silicon layer 200, thereby obtaining a good short circuit current.
In the present application, since the intrinsic amorphous silicon layer 200 is disposed between the first surface 110 of the substrate layer 100 and the doped amorphous silicon layer 300, that is, the intrinsic amorphous silicon layer 200 is inserted between the formed PN junctions for surface passivation, so that the solar cell obtains a higher open-circuit voltage, thereby improving the cell conversion efficiency, and the passivation layer 400 disposed on the second surface 120 of the substrate layer 100 can compensate for parasitic absorption of the doped amorphous silicon layer 300 and the intrinsic amorphous silicon layer 200, thereby obtaining a good short-circuit current, and further improving the cell conversion efficiency. Therefore, the solar cell disclosed by the application can solve the problem of low cell conversion efficiency of the solar cell related to the related technology.
In addition, after the whole battery structure of the solar battery is optimized, the battery power generation efficiency can be expected to be improved by 0.5%.
Optionally, referring to fig. 1, the solar cell may further include a first antireflection layer 510 and a second antireflection layer 520, where the first antireflection layer 510 and the second antireflection layer 520 may be silicon nitride layers, and the first antireflection layer 510 is disposed on a side of the doped amorphous silicon layer 300 facing away from the intrinsic amorphous silicon layer 200, and the second antireflection layer 520 is disposed on a side of the passivation layer 400 facing away from the substrate layer 100, that is, the first antireflection layer 510 and the second antireflection layer 520 serve as peripheral structures of the solar cell, so that the solar cell may be protected, and the first antireflection layer 510 plays a role of reducing reflection and passivation of light so that more light may enter the solar cell, thereby improving the light utilization rate, and meanwhile, the first antireflection layer 510 may prevent external dust and metal particles from polluting the inside of the solar cell, and the second antireflection layer 520 may perform passivation treatment on the passivation layer 400, specifically, perform passivation treatment on the doped polysilicon layer 420 described later on the passivation layer 400, and at the same time play a role of reflecting light penetrating the back of the solar cell, so as to improve the light utilization rate.
Alternatively, the first and second anti-reflection layers 510 and 520 may be formed by plasma-assisted chemical vapor deposition, and the thicknesses of the first and second anti-reflection layers 510 and 520 may be between 70 nm and 90 nm.
In this embodiment, the solar cell may further include a first electrode 610 and a second electrode 620, each of the first electrode 610 and the second electrode 620 being used to conduct current collected by the solar cell, i.e., each of the first electrode 610 and the second electrode 620 may be conductive, and one end of the first electrode 610 may pass through the first anti-reflection layer 510 and be in contact with the surface of the doped amorphous silicon layer 300, and one end of the second electrode 620 may pass through the second anti-reflection layer 520 and be in contact with the surface of the passivation layer 400, and at this time, both portions of the first electrode 610 and the second electrode 620 may be exposed to the solar cell.
In another embodiment, one end of the first electrode 610 may penetrate through the first anti-reflection layer 510 and be embedded in the doped amorphous silicon layer 300, i.e. the slurry forming the first electrode 610 burns through the first anti-reflection layer 510 and is embedded in the doped amorphous silicon layer 300, at this time, the contact area between the first electrode 610 and the doped amorphous silicon layer 300 is larger, which may increase the rate of current guiding out; one end of the second electrode 620 passes through the second anti-reflection layer 520 and is embedded in the passivation layer 400, i.e., the paste forming the second electrode 620 burns through the second anti-reflection layer 520 and is embedded in the passivation layer 400, and at this time, the contact area between the second electrode 620 and the passivation layer 400 is larger, which can also increase the rate of the outgoing current, i.e., the rate of the outgoing current can be increased by the first electrode 610 and the second electrode 620 as a whole.
Alternatively, the present application may employ the first anti-reflection layer 510 as the front surface of the solar cell and the second anti-reflection layer 520 as the back surface of the solar cell in the above embodiments.
In another embodiment, referring to fig. 2, the solar cell may further include a first conductive layer 710, where the first conductive layer 710 has a conductive function, and the first conductive layer 710 is disposed on a side of the doped amorphous silicon layer 300 away from the intrinsic amorphous silicon layer 200, specifically, may be disposed on the doped amorphous silicon layer 300 by sputtering, that is, in this embodiment, the first conductive layer 710 is used as a front surface of the solar cell, and the first conductive layer 710 may be a conductive film, and meanwhile, the first conductive layer 710 may be used as an anti-reflective film of the solar cell, so as to reduce reflection loss of light and improve conversion efficiency of the cell.
In this embodiment, the first electrode 610 of the solar cell is disposed on a side of the first conductive layer 710 facing away from the doped amorphous silicon layer 300, that is, the first electrode 610 is connected to the outer surface of the first conductive layer 710, and the first electrode 610 is connected to the doped amorphous silicon layer 300 through the first conductive layer 710, so as to achieve conductivity, so that it is not necessary to burn through the first conductive layer 710, and it is possible to achieve connection between the first electrode 610 and the doped amorphous silicon layer 300, which can simplify the process complexity, and since the conductivity rate of the first conductive layer 710 is higher, this can further increase the conductivity rate, and at the same time, while ensuring a higher conductivity rate, the embodiment of the present application can reduce the number of the first electrodes 610 disposed on the first conductive layer 710, thereby increasing the light absorption area of the front surface of the solar cell and reducing the production cost, and such a disposition manner does not affect the overall conductivity effect.
In a further embodiment, referring to fig. 3, the solar cell may further include a second conductive layer 720, where the second conductive layer 720 has a conductive function, and the second conductive layer 720 is disposed on a side of the passivation layer 400 away from the substrate layer 100, specifically may be disposed on the passivation layer 400 by sputtering, that is, in this embodiment, the second conductive layer 720 is used as a back surface of the solar cell, and the second conductive layer 720 may be a conductive film, and meanwhile, the second conductive layer 720 may be used as an anti-reflective film of the solar cell, so as to reflect light penetrating through the back surface of the solar cell, that is, reduce reflection loss of light, and improve conversion efficiency of the cell.
In this embodiment, the second electrode 620 of the solar cell is disposed on a side of the second conductive layer 720 facing away from the passivation layer 400, that is, the second electrode 620 is connected to the outer surface of the second conductive layer 720, and the second electrode 620 is connected to the passivation layer 400 through the second conductive layer 720, so as to achieve conductivity, so that it is not necessary to burn through the second conductive layer 720, and it is known that the embodiment of the present application can achieve connection between the second electrode 620 and the passivation layer 400, which can simplify the complexity of the process, and since the conductivity rate of the second conductive layer 720 is higher, this can further increase the conductivity rate, and at the same time, in the case of ensuring a higher conductivity rate, the embodiment of the present application can also reduce the number of the second electrodes 620 disposed on the second conductive layer 720, so as to reduce the production cost, and such a disposition mode does not affect the overall conductivity effect.
In addition, the first conductive layer 710 and the doped amorphous silicon layer 300 may form good ohmic contact, i.e. the resistance generated between the first conductive layer 710 and the doped amorphous silicon layer 300 is smaller, and the second conductive layer 720 and the passivation layer 400 may also form good ohmic contact, i.e. the resistance generated between the second conductive layer 720 and the passivation layer 400 is smaller, and meanwhile, the first conductive layer 710 and the second conductive layer 720 may reduce the recombination loss when the carriers flow parallel to the surface of the solar cell, and increase the collection efficiency of the carriers.
Alternatively, the number of the first electrodes 610 and the second electrodes 620 may be at least two, that is, the first conductive layer 710 is provided with a plurality of first electrodes 610, the second conductive layer 720 is provided with a plurality of second electrodes 620, and the first electrodes 610 and the second electrodes 620 generally include criss-cross main grid lines and auxiliary grid lines, the main grid lines are electrically connected with the auxiliary grid lines, when light is irradiated, current will be generated inside the solar cell, and the current will flow to the surface auxiliary grid lines, be collected through the auxiliary grid lines and then be converged on the main grid lines, and finally be led out through the main grid lines.
Alternatively, the first electrode 610 and the second electrode 620 may be silver electrodes, that is, the materials used for the first electrode 610 and the second electrode 620 are silver materials, and the silver materials have higher conductivity.
In another embodiment, the first electrode 610 may be a silver electrode and the second electrode 620 may be an aluminum electrode, so as to reduce the production cost, and since the second electrode 620 is connected to the second conductive layer 720, the second conductive layer 720 may compensate for the problem that the second electrode 620 has a lower conductive rate, i.e. the overall conductive effect is less adversely affected by this arrangement.
Optionally, at least one of the first conductive layer 710 and the second conductive layer 720 may be a transparent conductive layer, and at this time, more light passes through the first conductive layer 710, which makes more light enter the solar cell, more converted light, and more generated electric energy. Of course, neither the first conductive layer 710 nor the second conductive layer 720 may be transparent, i.e., may be other colored and light transmissive conductive layers.
Alternatively, the thicknesses of the first conductive layer 710 and the second conductive layer 720 may be 100 nanometers, and the materials of the first conductive layer 710 and the second conductive layer 720 may be indium tin oxide materials, and the main characteristics of indium tin oxide are electrical conduction and optical transparency.
Alternatively, the passivation layer 400 may include a tunneling oxide layer 410 and a doped polysilicon layer 420, where the tunneling oxide layer 410 may be an ultrathin tunneling oxide layer 410, the doped polysilicon layer 420 is an N-type polysilicon layer, the tunneling oxide layer 410 is disposed on the second surface 120, the doped polysilicon layer 420 is disposed on a side of the tunneling oxide layer 410 facing away from the substrate layer 100, the passivation layer 400 has a good surface passivation effect from chemical passivation of the tunneling oxide layer 410 and field passivation effect of the doped polysilicon layer 420 with a high concentration, and in particular, the doped polysilicon layer 420 has an effective doping concentration ranging from 5x10 19 to 5x10 21 cm-3, and the doped polysilicon layer 420 and the substrate layer 100 may form a high-low electric field, while the doped polysilicon layer 420 may provide a large amount of electrons, which may pass through the doped polysilicon layer 420 and the tunneling oxide layer 410, and holes may not pass through the doped polysilicon layer 420 and the tunneling oxide layer 410. Alternatively, the tunnel oxide layer 410 and the doped polysilicon layer 420 may be formed by low pressure chemical vapor deposition.
In this embodiment, the thickness of the tunneling oxide layer 410 may be between 1.2 nm and 2 nm, the thickness of the doped polysilicon layer 420 may be between 120 nm and 160 nm, the thickness of the intrinsic amorphous silicon layer 200 may be between 5 nm and 6 nm, and the thickness of the doped amorphous silicon layer 300 may be between 5 nm and 7 nm, which makes the overall thickness of the solar cell disclosed in the present application moderate and the conversion rate of the solar cell higher. Of course, the thickness of the tunnel oxide layer 410, the thickness of the doped polysilicon layer 420, the thickness of the intrinsic amorphous silicon layer 200, and the thickness of the doped amorphous silicon layer 300 may be within other ranges.
Alternatively, the intrinsic amorphous silicon layer 200 has a side facing the substrate layer 100, and the side and the first surface 110 may be both planar, i.e., both smooth surfaces.
In another embodiment, referring to fig. 1 to 3, the surface of the intrinsic amorphous silicon layer 200 facing the substrate layer 100 and the first surface 110 may be textured, i.e. the surface and the first surface 110 are both rugged surfaces, which can reduce the reflectivity of photons, thereby increasing the absorptivity of light energy and further increasing the productivity of the solar cell.
Optionally, the application also discloses a preparation method of the solar cell, which is applied to the solar cell, and the preparation method of the solar cell comprises the following steps:
S100, depositing an intrinsic amorphous silicon layer 200 on the first surface 110 of the substrate layer 100.
Specifically, the substrate layer 100 is an N-type silicon substrate, the first surface 110 is a side of the substrate layer 100 facing the solar ray and used for receiving the light, i.e. the first surface 110 is a front surface of the solar cell, and the intrinsic amorphous silicon layer 200, specifically undoped amorphous silicon, can be deposited on the first surface 110 by means of plasma-assisted chemical vapor deposition.
S200, depositing a doped amorphous silicon layer 300 on a side of the intrinsic amorphous silicon layer 200 facing away from the substrate layer 100.
Specifically, the present application may deposit the doped amorphous silicon layer 300 on the side of the intrinsic amorphous silicon layer 200 facing away from the substrate layer 100 by means of plasma-assisted chemical vapor deposition, and the doped amorphous silicon layer 300 is specifically a doped P-type amorphous silicon layer, and at this time, the doped amorphous silicon layer 300, the intrinsic amorphous silicon layer 200 and the substrate layer 100 are sequentially contacted, thereby forming a PN junction, so that the solar cell converts solar energy into electric energy.
S300, depositing a passivation layer 400 on the second surface 120 of the substrate layer 100.
Specifically, the second surface 120 of the substrate layer 100 is opposite to the first surface 110, that is, the second surface 120 is the back surface of the solar cell, the passivation layer 400 may be deposited on the second surface 120 by low-pressure chemical vapor deposition, and the passivation layer 400 may realize selective passage of carriers, and meanwhile, the second surface 120 is in passivation contact with the passivation layer 400, so as to improve the conversion efficiency of the cell.
In the embodiment of the application, the intrinsic amorphous silicon layer 200 is deposited between the first surface 110 of the substrate layer 100 and the doped amorphous silicon layer 300, that is, the intrinsic amorphous silicon layer 200 is inserted between the formed PN junctions for surface passivation, so that the solar cell obtains higher open-circuit voltage, and further the cell conversion efficiency is improved, and the passivation layer 400 deposited on the second surface 120 of the substrate layer 100 can compensate for parasitic absorption of the doped amorphous silicon layer 300 and the intrinsic amorphous silicon layer 200, thereby obtaining good short-circuit current, and further improving the cell conversion efficiency.
Optionally, the method for preparing the solar cell may further include:
s400, sputtering a first conductive layer 710 on a side of the doped amorphous silicon layer 300 facing away from the intrinsic amorphous silicon layer 200.
Specifically, the first conductive layer 710 may be disposed on a side of the doped amorphous silicon layer 300 facing away from the intrinsic amorphous silicon layer 200 by sputtering, that is, the first conductive layer 710 is sputtered on the front surface of the solar cell, and the first conductive layer 710 has a conductive function, which can improve the conductivity.
S500, depositing a first electrode 610 on a side of the first conductive layer 710 facing away from the doped amorphous silicon layer 300.
Specifically, the first electrode 610 is deposited on a side of the first conductive layer 710 facing away from the doped amorphous silicon layer 300, i.e., the first electrode 610 is deposited on a side of the first conductive layer 710 facing the light, the first electrode 610 is used to conduct out the current collected by the solar cell, i.e., the first electrode 610 may be electrically conductive, and the first electrode 610 is connected to the first conductive layer 710, i.e., the first electrode 610 is connected to the doped amorphous silicon layer 300 through the first conductive layer 710, thereby achieving electrical conduction, and at the same time, since the first electrode 610 is deposited on an outer surface of the first conductive layer 710, this may simplify the process complexity.
S600, sputtering the second conductive layer 720 on the side of the passivation layer 400 facing away from the substrate layer 100.
Specifically, the second conductive layer 720 can be disposed on one side of the passivation layer 400 away from the substrate layer 100 by sputtering, that is, the second conductive layer 720 is sputtered on the back surface of the solar cell, and the second conductive layer 720 also has a conductive function, which can improve conductivity.
S700, a second electrode 620 is deposited on a side of the second conductive layer 720 facing away from the passivation layer 400.
Specifically, the second electrode 620 is deposited on the side of the second conductive layer 720 facing away from the passivation layer 400, i.e. the second electrode 620 is deposited on the outer surface of the first conductive layer 710, the second electrode 620 is used for conducting the current collected by the solar cell, i.e. the second electrode 620 may be electrically conductive, and the second electrode 620 is connected to the second conductive layer 720, i.e. the second electrode 620 is connected to the passivation layer 400 via the second conductive layer 720, in particular to the doped polysilicon layer 420 of the passivation layer 400, thereby achieving electrical conduction, which may also simplify the process complexity due to the deposition of the second electrode 620 on the outer surface of the second conductive layer 720.
Of course, the present application may deposit the anti-reflection layer on both the front and back sides of the solar cell, that is, the first anti-reflection layer 510 is deposited on the side of the doped amorphous silicon layer 300 of the solar cell facing away from the intrinsic amorphous silicon layer 200, and the second anti-reflection layer 520 is deposited on the side of the passivation layer 400 of the solar cell facing away from the substrate layer 100, and at the same time, one end of the first electrode 610 may pass through the first anti-reflection layer 510 and contact the surface of the doped amorphous silicon layer 300, and one end of the second electrode 620 may pass through the second anti-reflection layer 520 and contact the surface of the passivation layer 400, thereby achieving electrical conduction.
The foregoing embodiments of the present application mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The foregoing is merely exemplary of the present application and is not intended to limit the present application. Various modifications and variations of the present application will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the application are to be included in the scope of the claims of the present application.
Claims (10)
1. A solar cell, comprising:
-a substrate layer (100), the substrate layer (100) having a first surface (110) facing light and a second surface (120) opposite to the first surface (110);
an intrinsic amorphous silicon layer (200), the intrinsic amorphous silicon layer (200) being provided on the first surface (110);
a doped amorphous silicon layer (300), the doped amorphous silicon layer (300) being provided on a side of the intrinsic amorphous silicon layer (200) facing away from the substrate layer (100);
-a passivation layer (400), said passivation layer (400) being provided on said second surface (120).
2. The solar cell of claim 1, further comprising:
A first anti-reflection layer (510), the first anti-reflection layer (510) being provided on a side of the doped amorphous silicon layer (300) facing away from the intrinsic amorphous silicon layer (200);
A first electrode (610), an end of the first electrode (610) passing through the first anti-reflection layer (510) and being embedded within the doped amorphous silicon layer (300);
-a second anti-reflection layer (520), the second anti-reflection layer (520) being provided on a side of the passivation layer (400) facing away from the substrate layer (100);
-a second electrode (620), an end of the second electrode (620) passing through the second anti-reflective layer (520) and being embedded within the passivation layer (400).
3. The solar cell of claim 1, further comprising:
a first conductive layer (710), the first conductive layer (710) being disposed on a side of the doped amorphous silicon layer (300) facing away from the intrinsic amorphous silicon layer (200);
And the first electrode (610) is arranged on one side of the first conductive layer (710) away from the doped amorphous silicon layer (300).
4. The solar cell of claim 3, further comprising:
A second conductive layer (720), the second conductive layer (720) being provided on a side of the passivation layer (400) facing away from the substrate layer (100);
-a second electrode (620), said second electrode (620) being provided on a side of said second conductive layer (720) facing away from said passivation layer (400).
5. The solar cell according to claim 4, wherein the first electrode (610) is a silver electrode and the second electrode (620) is an aluminum electrode.
6. The solar cell according to claim 4, wherein at least one of the first conductive layer (710) and the second conductive layer (720) is a transparent conductive layer.
7. The solar cell according to claim 1, wherein the passivation layer (400) comprises a tunnel oxide layer (410) and a doped polysilicon layer (420), the tunnel oxide layer (410) is provided on the second surface (120), the doped polysilicon layer (420) is provided on a side of the tunnel oxide layer (410) facing away from the substrate layer (100), and the intrinsic amorphous silicon layer (200) has a thickness between 5 nm and 6 nm, the doped amorphous silicon layer (300) has a thickness between 5 nm and 7 nm, the tunnel oxide layer (410) has a thickness between 1.2 nm and 2 nm, and the doped polysilicon layer (420) has a thickness between 120 nm and 160 nm.
8. The solar cell according to claim 1, characterized in that both the side of the intrinsic amorphous silicon layer (200) facing the substrate layer (100) and the first surface (110) are textured.
9. A method of manufacturing a solar cell applied to the solar cell according to any one of claims 1 to 8, characterized in that the method of manufacturing a solar cell comprises:
-depositing the intrinsic amorphous silicon layer (200) on the first surface (110) of the substrate layer (100);
-depositing the doped amorphous silicon layer (300) on a side of the intrinsic amorphous silicon layer (200) facing away from the substrate layer (100);
-depositing the passivation layer (400) on the second surface (120) of the substrate layer (100).
10. The method of manufacturing according to claim 9, wherein the method further comprises:
Sputtering a first conductive layer (710) on a side of the doped amorphous silicon layer (300) facing away from the intrinsic amorphous silicon layer (200);
depositing a first electrode (610) on a side of the first conductive layer (710) facing away from the doped amorphous silicon layer (300);
sputtering a second conductive layer (720) on a side of the passivation layer (400) facing away from the substrate layer (100);
A second electrode (620) is deposited on a side of the second conductive layer (720) facing away from the passivation layer (400).
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| CN202410264833.2A CN118039721A (en) | 2024-03-07 | 2024-03-07 | Solar cell and method for producing solar cell |
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| CN202410264833.2A CN118039721A (en) | 2024-03-07 | 2024-03-07 | Solar cell and method for producing solar cell |
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