CN1180049C - 沉积聚合物层的方法 - Google Patents

沉积聚合物层的方法 Download PDF

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CN1180049C
CN1180049C CNB008122083A CN00812208A CN1180049C CN 1180049 C CN1180049 C CN 1180049C CN B008122083 A CNB008122083 A CN B008122083A CN 00812208 A CN00812208 A CN 00812208A CN 1180049 C CN1180049 C CN 1180049C
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I·格里奇
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Abstract

一种用于将聚合物层沉积在发光装置中的配方，该配方包含溶解在溶剂中的共轭聚合物，所述溶剂包含选白萜烯和多烷基化的芳族化合物中的至少一种物质。

Description

沉积聚合物层的方法
本发明涉及一种在发光装置(LED)上沉积共轭聚合物层的配方。
用半导体共轭聚合物作发光层的发光装置是已知的。图1说明了一种简单的发光装置的结构。用阳极层4如氧化铟锡的形式来涂覆玻璃或塑料基底2。阳极可以以长条状的形式形成图案。阳极层可以涂有空穴转移层。然后沉积发光聚合物层6，随后沉积电子转移层。然后沉积阴极层8，构成完整的装置结构。作为例子，阴极层可以是钙或铝。阴极层8可以以交叉条的形式形成图案，以限定阳极和阴极重叠的象素P。或者，用未形成图案的阴极，可以限定发光条。再或者，可以在活性矩阵底面上限定象素，并且阴极可以形成图案或未形成图案。当在阳极和阴极之间施加电场时，空穴和电子都被注入发光聚合物层6中。在聚合物层中空穴和电子发生再结合，并且呈比例辐射衰减产生光。
空穴转移层通常可以由任何能保持空穴转移的化合物组成。合适材料的例子是有机导体如下述导电聚合物：聚苯胺、聚亚乙二氧基噻吩和其它的掺杂形式的聚噻吩、聚吡咯等。其它替代的材料是共轭聚胺并也可以是低分子量的胺如TPD。
发光层可以包含任何能保持电荷载体转移并且在装置驱动的条件下也能发光的分子的或聚合的化合物。其例子包括荧光有机化合物和共轭聚合物如Alq3、聚亚苯基和其衍生物、聚芴和其衍生物、聚噻吩和其衍生物、聚亚苯基亚乙烯基和其衍生物、含杂芳环的聚合物等。
电子转移层通常可以包含任何能保持电子转移的材料。其例子包括苝体系、Alq3、聚芴或聚芴共聚物、含杂芳环的聚合物等。
装置可以包含上述层的任何组合，只要它包括至少一层发光层。
在美国专利5,247,190或在美国专利4,539,507中描述了OLED，所述专利的内容在此参考引用。在美国专利5,247,190中，活性有机层是一种发光的半导体共轭聚合物，而在美国专利4,539,507中，活性有机层是一种发光的升华的分子膜。
按常规，采用下述方法来沉积聚合物层，即将聚合物溶液离心涂布或计量刮涂到阳极上，然后在RTP下使溶剂蒸发，或者采用热处理和/或减压的方式去除溶剂。聚合物可以是由溶液直接浇注而得的发光的聚合物本身，或者是聚合物的前体，该前体在热处理步骤的过程中转变成发光的聚合物。聚合物层可以包含两种或多种材料的混合物，如两种或多种聚合物的混合物。
本申请人认为可以采用不同的沉积方法在发光装置上沉积聚合物层，如英国申请9808806.5中所述。按此英国申请，采用与提供可溶液加工的材料进行的喷墨印刷法相同或相类似的方法来沉积发光聚合物，它包括在重力的作用下或在加压下或利用表面张力的作用使聚合物通过多个长孔。这样便于按需要直接沉积聚合物膜或使其形成图案。图2说明了这种方法的主要构思。
重要的是使用可以制成具有优良发光均匀性的聚合物薄膜的材料配方。在这点上，重要的是使用具有所需的表面张力、粘度、浓度和接触角(在沉积的介质和将在其上进行沉积的基底上)性能的配方，并且该配方较好也具有良好的溶液稳定性。
本发明的一个目的是提供便于直接沉积形成图案的聚合物膜的配方。尤其是，本发明的一个目的是提供这样一种配方，用它可以沉积具有改进的发光均匀性的聚合物膜，尤其是本文中的具有内在刚性共轭体系的较高分子量聚合物。
按本发明的一个方面，提供一种用于将聚合物层沉积在发光装置中的配方，该配方包含溶解在溶剂中的共轭聚合物，所述溶剂包含选自萜烯和多烷基化的芳族化合物中的至少一种物质。
按本发明的另一个方面，提供一种沉积聚合物层的方法，其过程是通过多个长孔将可溶液加工的配方施加到基底上，其中所述配方包含溶解在溶剂中的共轭聚合物，所述溶剂包含选自萜烯和多烷基化的芳族化合物中的至少一种物质。
配方中所用的溶剂较好基本上由选自萜烯和多烷基化的芳族化合物中的至少一种物质组成。在一个较好的实施方案中，它基本上由两种或多种属于此范围的溶剂的混合物组成。
萜烯可以是烃或包含一个或多个选自醇、酯、醚、酮和醛基的官能团。单萜烯是特别好的，如萜品油烯、苧烯和α-萜品醇。
在沉积温度时萜烯是液体的形式。
较好的多烷基化的芳族化合物包括多烷基苯，如繖花烃和异杜烯。所述多烷基化的苯是二烷基苯，该二烷基苯选自繖花烃、二乙基苯、1-甲基-4-叔丁基苯。在芳环上的各烷基取代基较好是彼此不同，即它们仅通过芳环连接在一起。
按一个实施方案，溶剂包含至少一种在不少于3个的位置上被烷基取代的芳族化合物。
出于本申请的目的，术语“共轭聚合物”是指这样的聚合物，它包括低聚物如二聚体、三聚体等，所述低聚物完全共轭(即沿着聚合物链的整个长度共轭)或部分共轭(即除了共轭链段外还包括非共轭链段)。
聚合物可以是适用于有机发光装置中的发光层、空穴转移层或电子转移层的聚合物。
在一个较好的例子中，共轭聚合物可以是发光聚合物、空穴转移聚合物或电子转移聚合物本身，或是发光聚合物、空穴转移聚合物或电子转移聚合物的前体。共轭聚合物或其前体可以是任何合适的聚合物，尤其是下述物质中的任何一种：
a)导电聚合物，如聚苯胺(PANI)和其衍生物、聚噻吩和其衍生物、聚吡咯和其衍生物、聚亚乙二氧基噻吩；所有这些物质的掺杂形式，尤其是聚苯乙烯磺酸掺杂的聚亚乙二氧基噻吩(PEDT/PSS)；
b)可溶液加工的电荷转移和/或发光/电致发光的聚合物，较好是共轭聚合物，如聚亚苯基和其衍生物、聚亚苯基亚乙烯基和其衍生物、聚芴和其衍生物、含三芳基的聚合物和其衍生物，各种形式的前体聚合物，共聚物(包括上述命名的聚合物种类)，通常是无规和嵌段共聚物，含有作为侧基连接到主链上的活性(电荷转移和/或发光)物类的聚合物，噻吩和其衍生物等。
也重视的是本发明也可用于包含其它化合物和其它无机化合物的配方，所述其它化合物如可溶液加工的分子化合物，包括螺旋化合物如在EP-A-0676461中所述的那些化合物，所述其它无机化合物如可溶液加工的有机金属前体化合物，以便用来制造绝缘体或导体。
本文讨论的具体例子是5BTF8(80重量％)和TFB(20％)的混合物。
为了更好地理解本发明和说明该如何实施本发明，作为例子，现在将参考所附的附图，所述附图是：
图1是发光装置的图；
图2是说明沉积各种聚合物层的方法的图；
图3a至3e分别表示异杜烯、萜品油烯、苧烯、繖花烃和α-萜品醇的结构式：
图4a至4c说明TFB和5BTF8的结构式；
图5是说明本文所述溶剂的改进溶解度稳定性的光密度与时间的图；
图6是说明沉积在异杜烯中的聚合物层的光致发光性能的图；和
图7是将沉积在异杜烯-萜品油烯(3∶1)和二甲苯中的聚合物的光致发光性能作比较的图。
图2说明了将聚合物层6沉积到形成图案的阳极4上的沉积方法。图示了多个长孔10，它们分别与各自的槽8对齐。长孔10通过导管1 2连接到盛放待沉积的溶液的储器14上。通过长孔10加入的溶液在加压下或在重力的作用下沉积发光聚合物层6。在此说明用于可溶液加工的材料16的具体配方。
实施例1
第一个例举的配方是在异杜烯中的0.5％W/V的5BTF8(80重量％)和TFB(20％)。TFB的结构式如图4a所示。5BTF8是掺杂有5％F8BT(其结构式如图4c所示)的F8(其结构式如图4b所示)。
实施例2
按第二个实施例，配方包含在溶剂中的0.5％W/V的5BTF8(80重量％)和TFB(20％)，所述溶剂包含异杜烯∶萜品油烯(3∶1)的混合物。
实施例3
按第三个实施例，配方包含在异杜烯∶苧烯(3∶1)中的0.5％W/V的5BTF8(80重量％)和TFB(20％)。
实施例4
按第四个实施例，配方包含在异杜烯∶繖花烃(3∶1)中的0.5％W/V的5BTF8(80重量％)和TFB(20％)。
使用各实施例的配方，采用图2所示的方法就可以沉积聚合物层。在17℃时在48小时内，测量溶解度。结果标绘在图5中，从中可以容易地看出它们在此期间显示出优良的溶解度稳定性。
随后，将实施例1和2的光致发光性能与使用二甲苯溶剂沉积的聚合物的光致发光性能作比较。图6说明了实施例1的结果，其中溶剂是异杜烯，图7说明了实施例2的结果，其中溶剂是异杜烯-萜品油烯(3∶1)。图6和7也说明了在沉积后对沉积在新溶剂中的聚合物层进行热处理的情况。
可以看出，在光致发光性能与发光波长的关系上没有明显的变化。这样，可以将发光装置制成具有已知和规定的发光性能，但使用本文所述的新配方可以在稳定性上得到显著的改进。

Claims (21)

1.一种沉积聚合物层的方法，其过程是通过多个长孔将可溶液加工的配方施加到包括一层掺杂聚合物作为有机导体的基底上，其中所述配方包含溶解在溶剂中的共轭聚合物，所述溶剂包含选自萜烯和多烷基化的芳族化合物中的至少一种物质，所述共轭聚合物是完全共轭或部分共轭的，所述萜烯是萜烯或被一个或多个选自醇基、酯基、醚基、酮基和醛基的基团取代的萜烯，所述多烷基化的芳族化合物包括在芳环上的烷基取代基。
2.如权利要求1所述的方法，其中所述萜烯是单萜烯。
3.如权利要求1或2所述的方法，其中所述溶剂包含被一个或多个选自醇基、酯基、醚基、酮基和醛基的基团取代的萜烯。
4.如权利要求1所述的方法，其中所述溶剂包含选自萜品油烯、苧烯和α-萜品醇中的一种物质。
5.如权利要求1所述的方法，其中所述多烷基化的芳族化合物是多烷基化的苯。
6.如权利要求5所述的方法，其中所述多烷基化的苯是二烷基苯。
7.如权利要求6所述的方法，其中所述二烷基苯选自繖花烃、二乙基苯、1-甲基-4-叔丁基苯。
8.如权利要求5所述的方法，其中所述多烷基化的苯是四烷基苯。
9.如权利要求8所述的方法，其中所述四烷基苯是异杜烯。
10.如权利要求1所述的方法，其中所述聚合物是发光聚合物。
11.如权利要求1所述的方法，其中所述聚合物包含芴基聚合物。
12.如权利要求1所述的方法，其中所述聚合物包含含芴和三芳基胺单元的聚合物。
13.如权利要求1所述的方法，其中所述聚合物包含芴基聚合物和含芴和三芳基胺单元的聚合物的混合物。
14.如权利要求13所述的方法，其中所述聚合物是5BTF8和TFB的混合物。
15.如权利要求14所述的方法，其中所述聚合物混合物的组成是5BTF8-80％；TFB-20％。
16.如权利要求1所述的方法，其中所述溶剂包含两种或多种所述物质的混合物。
17.如权利要求16所述的方法，其中所述混合物包含两种或多种物质，所述物质选自异杜烯、繖花烃、萜品油烯、苧烯和α-萜品醇的溶剂。
18.如权利要求17所述的方法，其中所述混合物包含3份异杜烯∶1份另一种所述溶剂。
19.如权利要求18所述的方法，其中所述混合物是异杜烯∶萜品油烯为3∶1的混合物。
20.如权利要求18所述的方法，其中所述混合物是异杜烯∶苧烯为3∶1的混合物。
21.如权利要求18所述的方法，其中所述混合物是异杜烯∶繖花烃为3∶1的混合物。
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