CN1179871A - Thin film actuated mirror array having dielectric layers - Google Patents
Thin film actuated mirror array having dielectric layers Download PDFInfo
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- CN1179871A CN1179871A CN96192838A CN96192838A CN1179871A CN 1179871 A CN1179871 A CN 1179871A CN 96192838 A CN96192838 A CN 96192838A CN 96192838 A CN96192838 A CN 96192838A CN 1179871 A CN1179871 A CN 1179871A
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- 239000010409 thin film Substances 0.000 title claims abstract description 127
- 239000011159 matrix material Substances 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 50
- 239000004020 conductor Substances 0.000 claims description 31
- 238000006073 displacement reaction Methods 0.000 claims description 30
- 239000012528 membrane Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000011253 protective coating Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- 230000009977 dual effect Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 24
- 238000003491 array Methods 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- JOXCDOKKASTCHR-UHFFFAOYSA-N [Si](O)(O)(O)O.[P] Chemical compound [Si](O)(O)(O)O.[P] JOXCDOKKASTCHR-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/02—Function characteristic reflective
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Optical Elements Other Than Lenses (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Video Image Reproduction Devices For Color Tv Systems (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Projection Apparatus (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
An array (200) of M x N thin film actuated mirrors (201) includes an active matrix (210), an array of actuating structures (300), each of the actuating structures (300) including an elastic member (235), a second thin film electrode (245), a thin film electrodisplacive member (255) and a first thin film electrode (265), and M x N number of multilayer stacks (400) of thin film dielectric members (401). In addition to providing a protection against chemical or physical attacks on the first thin film electrode (265) which also acts as a mirror for reflecting a light beam, the multilayer stack (400) of thin film dielectric members (401) placed on top of each of the actuating structures provides the maximum reflectance in each of the thin film actuated mirrors to thereby ensure an optimum optical efficiency of the array.
Description
Technical field of the present invention
The present invention relates to optical projection system, more specifically, relate to a kind of M * N array of thin film actuated mirrors and the manufacture method thereof that is used for this system, wherein, each thin film actuated mirror has the folded dielectric unit of multilayer, and the folded dielectric unit of this multilayer is formed on the top of each thin film actuated mirror so that it produces best optical efficiency.
Technical background
In the obtainable various video display systems, the known optical optical projection system can provide high-quality demonstration with large scale in the present technique field.In this optical projection system, throw light on equably at one for example on the actuated mirror array of M * N from the light of light source, wherein each speculum all is coupled with corresponding each driver.Driver can cause the displacement material and makes with resembling electricity piezoelectric or the electrostriction material, and this material when the electric field that is applied thereto is responded deformation will take place.
Incide from the light beam of each mirror reflects on the opening of an optical baffle for example.By adding power on signal for each driver, the relative position between each speculum and the incident beam will change, and the light path of the folded light beam of each speculum is deflected.When the light path of each folded light beam changes, from the light beam of each mirror reflects, can just change by the light quantity of opening, thus the intensity of having modulated light beam.By suitable Optical devices, projecting lens for example, the modulated beam of light that is subjected to by opening is sent on the projection screen, demonstrates image thus on screen.
In Figure 1A to figure among the 1G, show the manufacturing step of relevant preparation M * N thin film actuated mirror 10 arrays 11 respectively, wherein M and N are integer, these are open in the following pendent U.S. Patent application that belongs to the applicant: U.S. Patent Application Serial Number 08/430,628, title is " array of thin film actuated mirrors ".
The process of manufacturing array 10 is from preparation active matrix 20, and this matrix has 22, one M of a substrate * N transistor array (not shown) and M * N terminals 24 arrays.
Next step is, on the end face of active matrix 20, form a film and wait to remove layer 40, if this film is treated to be made of metal except that layer 40 then is formed with sputtering method, if this film is waited to remove layer 40 and made by silicic acid phosphorus glass (PSG) then use CVD (Chemical Vapor Deposition) method (CVD) or rotary plating method to form, make by polysilicon then use CVD (Chemical Vapor Deposition) method (CVD) to form if this film waits to remove layers 40.
Thereafter, form a supporting layer 15, it contains one and waits to remove layer 40 supporter that centers on 30 arrays by film, wherein supporting layer 15 is to form like this: wait to remove at film by photoetching process and form a M * N dead slot array (not shown) in the layer 40, each dead slot be positioned at each terminals 24 around; And in each dead slot, form a supporter 30 with sputtering method or CVD (Chemical Vapor Deposition) method (CVD), shown in Figure 1A.This supporter 30 is made by insulating material.
Next procedure is again, by forming an elastic layer 70 of using the insulating material identical with supporter 30 to make with so-gel, sputter or CVD (Chemical Vapor Deposition) method (CVD) at supporting layer 15 end faces.
Then, in each supporter 30, form the conductor 35 that is made of metal with following method: at first form a M * N hole array (not shown) with etching method, each cavity extends to the top of terminals 24 from the elastic layer top, added metal forms conductor 35 thus in the cavity then, shown in Figure 1B.
Next procedure is to form second thin layer 60 of being made by electric conducting material by sputtering method at the top of the elastic layer 70 that contains conductor 35.Second thin layer 60 is electrically connected to transistor by the conductor 35 that forms in supporter 30.
Then, cause displacement layer 80 by forming a thin-film electro of making by the piezoelectric that resembles the PZT (lead zirconium titanate) at the top of second thin layer 60, shown in Fig. 1 C with sol-gel, sputter or CVD (Chemical Vapor Deposition) method (CVD).
At next procedure be, make thin-film electro cause displacement layer 80 with photoetching process or laser cutting method, second thin layer 60 and elastic layer 70 cause displacement unit 85 arrays in M * N thin-film electro, form pattern in M * N second membrane electrode, 65 arrays and M * N Flexible element 75 arrays, expose until supporting layer 15, shown in Fig. 1 D.Each second membrane electrode 65 is electrically connected on the corresponding crystal pipe by the conductor 35 that forms in each supporter 30, and as the signal electrode of each thin film actuated mirror 11.
Then, each thin-film electro is caused displacement unit 85 heat-treat, undergo phase transition, form M * N heat treatment structure array (not shown) thus so that thin-film electro causes displacement layer 85.Because to cause displacement unit 85 all extremely thin for each thin-film electro, so be under the situation about being made by piezoelectric at it, it does not need polarized: this is because in the course of work of thin film actuated mirror 11, it can polarize by applying the signal of telecommunication.
After finishing above-mentioned steps, by using following method, thin-film electro in M * N heat treatment structure array causes the top of displacement unit 85, form one by resembling aluminium (Al) or silver not only conducting electricity but also the first film electrode 55 that reflective material is made (Ag), at first form one by the layer 50 that not only conducts electricity but also reflective material is made with sputtering method, cover the top of M * N heat treatment structure array fully, the supporting layer 15 that comprises exposure, shown in Fig. 1 E, then, optionally remove layer 50, form M * N actuated mirror structure 95 arrays with etching method, wherein each actuated mirror structure 95 comprises an end face and four sides, shown in Fig. 1 F.Each the first film electrode 55 is all as speculum in each thin film actuated mirror 11 and inclined to one side electrode.
Then, carry out treatment step by end face and four sides of covering each actuated mirror structure 95 with the thinfilm protective coating (not shown) fully.
Then, on supporting layer 15, remove film with etching method and wait to remove layer 40.At last, remove thinfilm protective coating, form M * N thin film actuated mirror 11 arrays thus, shown in Fig. 1 G with etching method.
Above-mentioned thin film actuated mirror 11 arrays 10 and manufacture method thereof come with some shortcomings.In removing the process of thinfilm protective coating; used etchant may destroy the first film electrode 55 with chemical mode; and the first film electrode 55 is simultaneously also as speculum; in each thin film actuated mirror 11, this may have a negative impact to the optical efficiency of thin film actuated mirror 11 arrays 10.In addition, especially when the first film electrode 55 by silver (Ag) when making, the first film electrode 55 may be oxidized, and then reduce reflectivity.
The present invention's summary
Therefore, a main purpose of the present invention provides a kind of M * N array of thin film actuated mirrors and manufacture method thereof that can obtain best optical efficiency.
According to an aspect of the present invention, a kind of M * N array of thin film actuated mirrors is provided, be used for a kind of optical projection system, wherein, M and N are integer, and this array comprises: an active matrix, this active matrix comprise a substrate, one in M * N terminals array and a M * N transistor array, and wherein each terminals are electrically connected on the corresponding crystal pipe; M * N conductor, each conductor is made by electric conducting material; A M * N Drive Structure array, each Drive Structure has a coupling part and a reflector segment, each Drive Structure comprises a Flexible element, one second membrane electrode, a thin-film electro causes displacement unit and a first film electrode, wherein each conductor is positioned at the coupling part of each Drive Structure, extend to the top of the terminals that are electrically connected with respective transistor from the bottom of second membrane electrode, thus so that second membrane electrode as the signal electrode in each thin film actuated mirror, the first film electrode of being made by material a kind of not only reflective but also conduction is grounded, thus as speculum in each thin film actuated mirror and electrode partially; The multilayer of M * N thin film dielectric unit is folded, and each thin film dielectric unit is placed in the top of the reflector segment in each Drive Structure, and wherein said each thin film dielectric unit has preset thickness and specific specific refractivity.
According to another aspect of the present invention, a kind of method of manufacturing M * N array of thin film actuated mirrors is provided, wherein, M and N are integer, said method may further comprise the steps: an active matrix is provided, this active matrix comprises a substrate, and one in M * N terminals array and a M * N transistor array, and wherein each terminals are electrically connected on the corresponding crystal pipe; Wait to remove layer at film of deposited on top of active matrix; Wait to remove at film and form a M * N dead slot array in the layer, each dead slot be positioned at each terminals top around; Wait that at film the deposited on top of removing layer forms an elastic layer made from insulating material, and these dead slots of filling simultaneously; Form M * N conductor array in elastic layer, each conductor extends to corresponding terminals top from the top of elastic layer; Form one second thin layer at the top of elastic layer consecutive deposition, a thin-film electro causes displacement layer and a first film layer, and wherein, second thin layer is made by electric conducting material, and the first film layer is by not only conducting electricity but also reflective material is made; Make the first film layer, thin-film electro causes displacement layer, each self-forming pattern of second thin layer and elastic layer, wait to remove layer up to exposing film, form M * N thus and partly finish the Drive Structure array, wherein each is partly finished Drive Structure and all has a first film electrode, and a thin-film electro causes displacement unit, one second thin-film electro layer and a Flexible element; At the top of partly finishing Drive Structure that the film that contains exposure waits to remove layer, a plurality of thin film dielectric layer of deposit continuously, each thin film dielectric layer all has preset thickness; Make thin film dielectric layer in M * N thin film dielectric unit multilayer is folded, form pattern respectively, waiting to remove layer up to film exposes once more, form M * N thus and partly finish actuated mirror array, wherein, a plurality of thin film dielectric layer form pattern in such a way, be that each is partly finished actuated mirror and is divided into a drive part and reflector segment, each conductor and each thin film dielectric unit lay respectively at each drive part of partly finishing actuated mirror and reflector segment; Cover each fully with thinfilm protective coating and partly finish actuated mirror, form the array of thin film actuated mirrors that M * N has protection thus; Remove film and wait to remove layer; Remove thinfilm protective coating, form M * N array of thin film actuated mirrors thus.
The accompanying drawing summary
Above-mentioned purpose of the present invention and other purpose and characteristics will be by becoming cheer and bright below in conjunction with the accompanying drawing description of a preferred embodiment, in the accompanying drawings:
Figure 1A to 1G shows the explanation schematic cross section of the manufacturing step of disclosed M * N array of thin film actuated mirrors in the past;
Fig. 2 shows the cross-sectional view according to M of the present invention * N array of thin film actuated mirrors;
Fig. 3 A to 3F shows the schematic cross section that the method for M * N array of thin film actuated mirrors is as shown in Figure 2 made in explanation.
Embodiments of the invention
Referring now to Fig. 2 and Fig. 3 A to 3F, they are respectively the cross-sectional view of M * N thin film actuated mirror 201 arrays 200 that are used in optical projection system, and wherein M and N are integer, and the schematic cross section that its manufacture method is described.It should be noted that: the same section that occurs in Fig. 2 and Fig. 3 A to Fig. 3 F adopts identical label.
In Fig. 2, the cross-sectional view of a M according to an embodiment of the invention * N thin film actuated mirror 201 arrays 200 is provided, this array 200 comprises an active matrix 210, M * N multilayer of M * 225, one M of N conductor * N Drive Structure 300 arrays and thin film dielectric unit folded 400.For simplicity's sake, in Fig. 2, a M * N thin film actuated mirror 201 arrays 200 are shown, each thin film actuated mirror 201 has the multilayer of a thin film dielectric unit 401 and folds 400, and wherein multilayer folded 400 contains a pair of thin film dielectric unit 401.
Each Drive Structure has a coupling part and a reflector segment 330,335, and comprises that 245, one thin-film electro of 235, one second membrane electrodes of a Flexible element cause displacement unit 255 and a first film electrode 265.Each conductor 225 of being made by electric conducting material is placed in the coupling part 330 in each Drive Structure 300, extend to the top of the terminals 214 that are electrically connected with transistor by the bottom of second membrane electrode 245, make second membrane electrode 245 be electrically connected to transistor thus, so that second membrane electrode 245 is as the signal electrode in each thin film actuated mirror 201.By resemble aluminium not only conduct electricity but also the first film electrode 265 that reflective material is made is grounded so that its in thin film actuated mirror 201 as speculum and electrode partially.
The multilayer of each thin film dielectric unit 401 folded 400 places the top of the reflector segment 335 of each Drive Structure 300, and wherein each thin film dielectric unit 401 has a preset thickness and a specific refractive index.
In the viewing area, be possible by guiding reflectance to increase single metal layer with the additional dielectric layer.
The feature reflectance R of metal normal incident in air is:
Formula (1) wherein, n and k are respectively the refractive index and the extinction coefficient of metal.
For example, be n if metal scribbles two kinds of refractive indexes
1And n
2Quarter-wave material, and n
2Adjacent with metal, then the optical reflection ratio of its normal incident in air is:
Formula (2)
If have
Formula (3) and satisfied
Or
Formula (4) is supposed n
2+ k
2〉=1 this reflectance is greater than the reflectance of the naked metal that is provided by formula (1).
According to formula (4), the reflectance of any metal can improve (n by two quarter-wave layers
1/ n
2)＞1, and n
1At skin, n
2Adjacent with metal.This ratio is high more, and the reflectance increase is big more.
For example, undressed aluminium is when being the normal incident of light beam of 550 nanometers with wavelength, and its reflectance is approximately 91.6%.
If using by coefficient is that 1.38 magnesium fluoride and coefficient are two quarter-wave material aluminium coatings that 2.35 zinc sulphide is formed, magnesium fluoride and aluminium are adjacent, and skin is a zinc sulphide, and (n is then arranged
1/ n
2)
2=2.9, according to formula (3), reflectance is increased sharply to 96.9%.
Each thin film actuated mirror 201 reflectance in the array 200 can be optimized the thickness that each forms the thin film dielectric unit 401 of multilayer folded 400 by simulation, refraction coefficient, and the quantity of thin film dielectric unit 401 and incident, and reach maximum.
The multilayer of each thin film dielectric unit 401 folded 400 not only protects the first film electrode 265 in each Drive Structure to make it not be subjected to chemistry and physical damage; and maximum reflectance is provided in each thin film actuated mirror 201, obtain best optical efficiency thus in each thin film actuated mirror 201 in array 200.
In Fig. 3 A to 3F, provide schematic cross-sectional view that the method for the M shown in the shop drawings 2 * N thin film actuated mirror 201 arrays 200 is described.
The process of manufacturing array 200 is from preparation active matrix 210, and it comprises 212, one M of a substrate * N terminals 214 arrays and a M * N transistor array (not shown), and wherein substrate 212 is made by the insulating material resemble the silicon wafer.
Next procedure is, form a film at the top of active matrix 210 and wait to remove layer 220, this film waits to remove layer 220 the 0.1-2 micron thickness, metal by for example copper (Cu) or nickel (Ni), silicic acid phosphorus glass (PSG) or polysilicon are made, if this film is treated to be made of metal except that layer 220 then is formed with sputtering method or vapour deposition method, if this film is waited to remove layer 220 and made by silicic acid phosphorus glass (PSG) then use CVD (Chemical Vapor Deposition) method (CVD) or rotary plating method to form, make by polysilicon then use CVD (Chemical Vapor Deposition) method (CVD) to form if this film waits to remove layers 220.
, wait to remove at film by photoetching process and form a M * N dead slot array (not shown) in the layer 220 thereafter, each dead slot be positioned at each terminals 214 tops around.
Next procedure is again, forms one with the insulating material elastic layer 230 made of silicon nitride for example by the deposited on top of waiting to remove layer at the film that has dead slot with colloidal sol-gel, sputter or CVD (Chemical Vapor Deposition) method (CVD), and it has the 0.1-2 micron thickness.
Then, on elastic layer 230, form by metal M * N conductor 225 of making of tungsten (W) for example.Each conductor 225 is to form like this: at first form a M * N hole array (not shown) with etching method, each cavity extends to the top of terminals 214 from elastic layer 230 tops, fill metal with sputtering method then in the cavity, as shown in Figure 3A.
Then, form one second thin layer 240 with sputtering method or vacuum vapour deposition at the top of elastic layer 230 and conductor 225, for example platinum (Pt) or platinum titanium alloy (Pt/Ti) are made the 0.1-2 micron thickness to this thin layer 240 by electric conducting material.
Next procedure is, cause displacement layer 250 with vacuum vapour deposition or sputtering method in thin-film electro of deposited on top of second thin layer 240, it by piezoelectric for example aluminium titanates zirconium (PZT) or electrostriction material for example lead magnesium niobate (PMN) make, its thickness is the 0.1-2 micron.Then thin-film electro is caused displacement layer 250 and heat-treat, so that it undergoes phase transition.
Next procedure is again, cause displacement layer 250 tops with sputtering method or vacuum vapour deposition in thin-film electro and form a first film layer 260, it by for example aluminium (Al) or silver (Ag) not only conduct electricity but also reflective material is made, its thickness is the 0.1-2 micron, shown in Fig. 3 B.
Following step is, after film waits to remove layer 220 exposure, the first film layer 260, thin-film electro causes displacement layer 250, the second thin layers 240 and elastic layer 230 each self-forming pattern, forms M * N thus and partly finishes Drive Structure 341 arrays 340, shown in Fig. 3 C, wherein each is partly finished Drive Structure and comprises that 265, one electricity of a first film electrode cause 255, one second membrane electrodes 245 of displacement unit and a Flexible element 235.Each second membrane electrode 245 of partly finishing in the Drive Structure 341 is electrically connected on the transistor by corresponding conductor 225 and terminals 214, thus as the signal electrode of each thin film actuated mirror 201.Each partly finishes speculum and the inclined to one side electrode of the first film electrode 265 of Drive Structure 341 as each thin film actuated mirror 201.
Because to cause displacement unit 255 all extremely thin for each thin-film electro, so be under the situation about being made by piezoelectric at it, it does not need polarized: this is because in the course of work of thin film actuated mirror 201, it can polarize by applying the signal of telecommunication.
Next, with sputtering method or vacuum vapour deposition, at the top of partly finishing Drive Structure 341 that the film that contains exposure waits to remove layer 220, a plurality of thin film dielectric layer (not shown) of deposit continuously.Each thin film dielectric layer has preset thickness and specific refractivity.Be similarly for simplicity, two thin film dielectric layer only are shown.
After finishing above-mentioned steps, make thin film dielectric layer in M * N thin film dielectric unit 401 multilayers folded 400, form pattern respectively with photoetching process or laser cutting-out method, wait to remove layer 220 up to film and expose once more, form M * N thus and partly finish actuated mirror 321 arrays 320, shown in Fig. 3 D.A plurality of thin film dielectric layer form pattern in such a way, be that each is partly finished actuated mirror 321 and has a drive part and reflector segment 330,335, wherein each conductor 225 is arranged in each drive part of partly finishing actuated mirror 321 330, and the multilayer of each thin film dielectric unit 401 folded 400 is arranged in each reflector segment of partly finishing actuated mirror 321 335.Each partly finishes actuated mirror 321, and to comprise the multilayer of thin film dielectric unit 401 folded 400, the first film electrode 265, and thin-film electro causes displacement unit 255, the second membrane electrodes 245 and Flexible element 235.
Next procedure is again, covers each fully with thinfilm protective coating 290 and partly finishes actuated mirror 321, forms protected actuated mirror 311 arrays 310 of M * N thus, shown in Fig. 3 E.
Then, remove film with etching method and wait to remove layer 220.At last, remove thinfilm protective coating 290, form M * N thin film actuated mirror 201 arrays 200 thus, shown in Fig. 3 F.
Although each thin film actuated mirror 201 with method preparation of the present invention has a single morphosis, but be appreciated that using method of the present invention can make array of thin film actuated mirrors equally, and each thin film actuated mirror has a dual morphosis, for the latter, only relate to the structure that an additional electrical causes a displacement layer and an additional electrode layer.
Should also be noted that method of the present invention can be revised so that the array of thin film actuated mirrors of making has different geometries.
Although just describe the present invention, yet under the situation that does not depart from by the category of the present invention of following claim defined, can make other various modifications and variations by some preferred embodiment.
Claims (7)
1, a kind of M * N array of thin film actuated mirrors, wherein, M and N are integer, are used for a kind of optical projection system, this array comprises:
An active matrix, this active matrix comprise a substrate, a M * N terminals array and a M * N transistor array, and wherein each terminals are electrically connected on the corresponding crystal pipe;
M * N conductor, each conductor is made by electric conducting material;
A M * N Drive Structure array, each Drive Structure has a coupling part and a reflector segment, each Drive Structure comprises a Flexible element, one second membrane electrode, a thin-film electro causes displacement unit and a first film electrode, wherein each conductor is positioned at the coupling part of each Drive Structure, extend to the top of the terminals that are electrically connected with respective transistor from the bottom of second membrane electrode, thus so that second membrane electrode as the signal electrode in each thin film actuated mirror, the first film electrode of being made by material a kind of not only reflective but also conduction is grounded, thus as speculum in each thin film actuated mirror and electrode partially;
The multilayer of M * N thin film dielectric unit is folded, and each thin film dielectric unit is placed in the top of the reflector segment in each Drive Structure, and wherein said each thin film dielectric unit has preset thickness and specific refractive index.
2, according to the array of claim 1, wherein, each thin film actuated mirror has dual morphosis, and this dual morphosis comprises that a pair of electricity that is separated by an electrode causes displacement unit.
3, according to the array of claim 2, wherein, each thin film actuated mirror also has an additional electrode layer and an additional electrical causes displacement layer.
4, a kind of method of manufacturing M * N array of thin film actuated mirrors, wherein, M and N are integer, said method may further comprise the steps:
An active matrix is provided, and this active matrix comprises a substrate, a M * N terminals array and a M * N transistor array, and wherein each terminals are electrically connected on the corresponding crystal pipe;
Wait to remove layer at film of deposited on top of active matrix;
Wait to remove at film and form a M * N dead slot array in the layer, each dead slot be positioned at each terminals top around;
Wait that at film the deposited on top of removing layer forms an elastic layer made from insulating material, and these dead slots of filling simultaneously;
Form M * N conductor array in elastic layer, each conductor extends to corresponding terminals top from the top of elastic layer;
Form one second thin layer at the top of elastic layer consecutive deposition, a thin-film electro causes displacement layer and a first film layer, and wherein, second thin layer is made by electric conducting material, and the first film layer is by not only conducting electricity but also reflective material is made;
Make the first film layer, thin-film electro causes displacement layer, each self-forming pattern of second thin layer and elastic layer, wait to remove layer up to exposing film, form M * N thus and partly finish the Drive Structure array, wherein each is partly finished Drive Structure and all has a first film electrode, and a thin-film electro causes displacement unit, one second thin-film electro layer and a Flexible element;
At the top of partly finishing Drive Structure that the film that contains exposure waits to remove layer, a plurality of thin film dielectric layer of deposit continuously, each thin film dielectric layer all has preset thickness;
Make thin film dielectric layer in M * N thin film dielectric unit multilayer is folded, form pattern respectively, waiting to remove layer up to film exposes once more, form M * N thus and partly finish actuated mirror array, wherein, a plurality of thin film dielectric layer form pattern in such a way, be that each is partly finished actuated mirror and is divided into a drive part and reflector segment, each conductor and each thin film dielectric unit lay respectively at each drive part of partly finishing actuated mirror and reflector segment;
Cover each fully with thinfilm protective coating and partly finish actuated mirror, form the array of thin film actuated mirrors that M * N has protection thus;
Remove film and wait to remove layer;
Remove thinfilm protective coating, form M * N array of thin film actuated mirrors thus.
5, according to the method for claim 4, wherein, a plurality of thin film dielectric layer form with sputtering method or vapour deposition method deposit.
6, according to the method for claim 4, wherein, each thin film actuated mirror has dual morphosis, and this dual structure comprises that two electricity that separated by an electrode cause displacement unit.
7, the method for claim 4 also comprises, and after electricity causes the displacement layer deposit, forms an additional electrode layer continuously and an additional electrical causes displacement layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1996/2315 | 1996-01-31 | ||
| KR1019960002315A KR100229790B1 (en) | 1996-01-31 | 1996-01-31 | Actuated mirror array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1179871A true CN1179871A (en) | 1998-04-22 |
| CN1104815C CN1104815C (en) | 2003-04-02 |
Family
ID=36955865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96192838A Expired - Fee Related CN1104815C (en) | 1996-01-31 | 1996-04-08 | Thin film actuated mirror array having dielectric layers |
Country Status (14)
| Country | Link |
|---|---|
| JP (1) | JP4152437B2 (en) |
| KR (1) | KR100229790B1 (en) |
| CN (1) | CN1104815C (en) |
| AR (1) | AR001149A1 (en) |
| AU (1) | AU724477B2 (en) |
| BR (1) | BR9607803A (en) |
| CA (1) | CA2216557A1 (en) |
| CZ (1) | CZ304197A3 (en) |
| HU (1) | HUP9801148A3 (en) |
| PE (1) | PE47197A1 (en) |
| PL (1) | PL179839B1 (en) |
| TW (1) | TW348324B (en) |
| UY (1) | UY24186A1 (en) |
| WO (1) | WO1997028653A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4582380B2 (en) * | 2001-05-11 | 2010-11-17 | ソニー株式会社 | LIGHT MODULATION ELEMENT, OPTICAL DEVICE USING THE SAME, AND LIGHT MODULATION ELEMENT MANUFACTURING METHOD |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5260798A (en) * | 1989-11-01 | 1993-11-09 | Aura Systems, Inc. | Pixel intensity modulator |
| US5247222A (en) * | 1991-11-04 | 1993-09-21 | Engle Craig D | Constrained shear mode modulator |
| CA2175198A1 (en) * | 1993-10-29 | 1995-05-04 | Jeong Beom Ji | Thin film actuated mirror array and methods for its manufacture |
| CA2176111A1 (en) * | 1993-11-09 | 1995-05-18 | Jeong Beom Ji | Thin film actuated mirror array for use in an optical projection system and method for the manufacture thereof |
| US5355008A (en) * | 1993-11-19 | 1994-10-11 | Micrel, Inc. | Diamond shaped gate mesh for cellular MOS transistor array |
-
1996
- 1996-01-04 TW TW085100044A patent/TW348324B/en active
- 1996-01-31 KR KR1019960002315A patent/KR100229790B1/en not_active IP Right Cessation
- 1996-03-04 AR AR33563296A patent/AR001149A1/en unknown
- 1996-03-20 PE PE1996000192A patent/PE47197A1/en not_active Application Discontinuation
- 1996-03-22 UY UY24186A patent/UY24186A1/en not_active IP Right Cessation
- 1996-04-08 PL PL96322490A patent/PL179839B1/en unknown
- 1996-04-08 WO PCT/KR1996/000048 patent/WO1997028653A1/en not_active Application Discontinuation
- 1996-04-08 HU HU9801148A patent/HUP9801148A3/en unknown
- 1996-04-08 CN CN96192838A patent/CN1104815C/en not_active Expired - Fee Related
- 1996-04-08 CA CA002216557A patent/CA2216557A1/en not_active Abandoned
- 1996-04-08 JP JP52750197A patent/JP4152437B2/en not_active Expired - Fee Related
- 1996-04-08 CZ CZ973041A patent/CZ304197A3/en unknown
- 1996-04-08 AU AU52899/96A patent/AU724477B2/en not_active Ceased
- 1996-04-08 BR BR9607803A patent/BR9607803A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100229790B1 (en) | 1999-11-15 |
| WO1997028653A1 (en) | 1997-08-07 |
| JP4152437B2 (en) | 2008-09-17 |
| CN1104815C (en) | 2003-04-02 |
| BR9607803A (en) | 1998-07-07 |
| UY24186A1 (en) | 1996-06-21 |
| CZ304197A3 (en) | 1998-04-15 |
| PL179839B1 (en) | 2000-11-30 |
| TW348324B (en) | 1998-12-21 |
| KR970060514A (en) | 1997-08-12 |
| HUP9801148A3 (en) | 2002-07-29 |
| AU724477B2 (en) | 2000-09-21 |
| JPH11503538A (en) | 1999-03-26 |
| PE47197A1 (en) | 1998-02-06 |
| PL322490A1 (en) | 1998-02-02 |
| AR001149A1 (en) | 1997-09-24 |
| AU5289996A (en) | 1997-08-22 |
| CA2216557A1 (en) | 1997-08-07 |
| HUP9801148A2 (en) | 1998-08-28 |
| MX9707476A (en) | 1997-11-29 |
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