CN117954433A - Capacitor structure and forming method thereof - Google Patents
Capacitor structure and forming method thereof Download PDFInfo
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- CN117954433A CN117954433A CN202211349113.3A CN202211349113A CN117954433A CN 117954433 A CN117954433 A CN 117954433A CN 202211349113 A CN202211349113 A CN 202211349113A CN 117954433 A CN117954433 A CN 117954433A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 239000003989 dielectric material Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000003860 storage Methods 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 93
- 238000010586 diagram Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Abstract
A capacitor structure and method of forming the same, wherein the capacitor structure comprises: a substrate; a dielectric layer on the substrate; a first electrode portion and a second electrode portion within the dielectric layer, the first electrode portion comprising: the first electrode terminals are respectively connected with a plurality of first finger-shaped polar plates; a plurality of second finger-shaped polar plates respectively connected with the first electrode ends; the second electrode portion includes: the second electrode end surrounds the first finger-shaped polar plates and the second finger-shaped polar plates; a plurality of third finger-shaped polar plates respectively connected with the second electrode ends; and a plurality of fourth finger-shaped polar plates respectively connected with the second electrode ends. Since the second electrode end of the second electrode portion encloses the number of first finger plates and the number of second finger plates, the storage density of the capacitive structure may also result from: the storage density of the capacitor structure is improved by the first finger-shaped polar plate positioned at the outermost side and the second electrode end and the second finger-shaped polar plate positioned at the outermost side and the second electrode end.
Description
Technical Field
The present disclosure relates to semiconductor manufacturing, and more particularly, to a capacitor structure and a method for forming the same.
Background
In a semiconductor integrated circuit, an integrated capacitor formed on the same chip as a transistor circuit is widely used. The form of the capacitor mainly comprises two types of metal-insulator-metal (MIM) capacitors and metal-oxide-metal (MOM) capacitors. The MIM capacitor uses upper and lower layers of metal as capacitor electrode plates, a new photoetching level is generally needed for manufacturing the MIM capacitor, meanwhile, breakdown voltage of a capacitor dielectric layer and the size of the capacitor are inconsistent amounts, and the flat plate capacitor generally needs a large area, so that the integration of devices is not facilitated. And the MOM capacitor can be manufactured into a capacitor with larger capacity on a relatively smaller area by adopting a method of combining a finger structure and a lamination. In addition, when the MOM capacitor is manufactured, an additional photoresist layer and a mask are not needed, so that the manufacturing process is simpler and the cost is lower compared with that of the MIM capacitor.
However, the MOM capacitor of the prior art still has a number of problems.
Disclosure of Invention
The invention provides a capacitor structure and a forming method thereof to improve the storage density of the capacitor structure.
In order to solve the above technical problems, the technical solution of the present invention provides a capacitor structure, including: a substrate; a dielectric layer on the substrate; a first electrode portion and a second electrode portion within the dielectric layer, wherein the first electrode portion comprises: a first electrode tip including opposing first and second sidewalls; a plurality of first finger-shaped polar plates respectively connected with the first side wall, wherein the plurality of first finger-shaped polar plates are arranged in parallel along a first direction; and a plurality of second finger-shaped polar plates respectively connected with the second side wall, wherein the plurality of second finger-shaped polar plates are arranged in parallel along the first direction; the second electrode portion includes: a second electrode end surrounding the plurality of first finger plates and the plurality of second finger plates, the second electrode end including opposing third and fourth sidewalls; a plurality of third finger-shaped polar plates respectively connected with the third side wall, wherein the plurality of third finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of third finger-shaped polar plates and the plurality of first finger-shaped polar plates are arranged in an intersecting manner; and a plurality of fourth finger-shaped polar plates respectively connected with the fourth side wall, wherein the plurality of fourth finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of fourth finger-shaped polar plates and the plurality of second finger-shaped polar plates are arranged in an intersecting manner.
Optionally, the material of the dielectric layer includes: a low-K dielectric material; the low-K dielectric material includes: silicon oxide, silicon nitride or silicon oxynitride.
Optionally, the material of the first electrode portion includes: copper.
Optionally, the material of the second electrode portion includes: copper.
Correspondingly, the invention also provides a method for forming the capacitor structure, which comprises the following steps: providing a substrate; forming a dielectric layer on the substrate; forming a first electrode portion and a second electrode portion within the dielectric layer, wherein the first electrode portion includes: a first electrode tip including opposing first and second sidewalls; a plurality of first finger-shaped polar plates respectively connected with the first side wall, wherein the plurality of first finger-shaped polar plates are arranged in parallel along a first direction; and a plurality of second finger-shaped polar plates respectively connected with the second side wall, wherein the plurality of second finger-shaped polar plates are arranged in parallel along the first direction; the second electrode portion includes: a second electrode end surrounding the plurality of first finger plates and the plurality of second finger plates, the second electrode end including opposing third and fourth sidewalls; a plurality of third finger-shaped polar plates respectively connected with the third side wall, wherein the plurality of third finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of third finger-shaped polar plates and the plurality of first finger-shaped polar plates are arranged in an intersecting manner; and a plurality of fourth finger-shaped polar plates respectively connected with the fourth side wall, wherein the plurality of fourth finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of fourth finger-shaped polar plates and the plurality of second finger-shaped polar plates are arranged in an intersecting manner.
Optionally, before forming the first electrode portion and the second electrode portion in the dielectric layer, the method further includes: forming a mask structure on the dielectric layer; a sacrificial layer is formed over the mask structure.
Optionally, after forming the sacrificial layer, the method further includes: forming a plurality of initial finger-shaped polar plate grooves which are arranged in parallel along the first direction in the sacrificial layer; forming a first electrode end groove in the sacrificial layer, wherein the first electrode end groove penetrates through a plurality of initial finger-shaped polar plate grooves along the first direction, so that a plurality of first finger-shaped polar plate grooves and a plurality of second finger-shaped polar plate grooves are formed in the initial finger-shaped polar plate grooves, and the first finger-shaped polar plate grooves and the second finger-shaped polar plate grooves are respectively positioned on two sides of the first electrode end groove; forming side walls on the side wall surfaces of the first electrode end groove, the side wall surfaces of the first finger-shaped polar plate groove and the side wall surfaces of the second finger-shaped polar plate groove; and etching the sacrificial layer by taking the side wall as a mask, and forming a second electrode end groove, a plurality of third finger-shaped polar plate grooves and a plurality of fourth finger-shaped polar plate grooves which are respectively communicated with the second electrode end groove in the sacrificial layer.
Optionally, the method for forming the side wall includes: forming a side wall material layer on the side wall and the bottom surface of the first electrode end groove, the side wall and the bottom surface of the first finger-shaped polar plate groove, the side wall and the bottom surface of the second finger-shaped polar plate groove and the top surface of the sacrificial layer; and etching the side wall material layer until the top surface of the sacrificial layer, the bottom surface of the first electrode end groove, the bottom surface of the first finger-shaped polar plate groove and the bottom surface of the second finger-shaped polar plate groove are exposed, so that the side wall is formed.
Optionally, the forming process of the side wall material layer includes: an atomic layer deposition process, a chemical vapor deposition process, or a physical vapor deposition process.
Optionally, the material of the side wall is different from the material of the sacrificial layer.
Optionally, the material of the side wall includes: one or more of amorphous silicon, silicon oxide and silicon nitride.
Optionally, the material of the sacrificial layer includes: one or more of titanium oxide and titanium nitride.
Optionally, the method for forming the first electrode portion and the second electrode portion in the dielectric layer includes: after the sacrificial layer is etched by taking the side wall as a mask, the mask structure and the dielectric layer are etched by taking the sacrificial layer as a mask, and a first electrode end target groove, a second electrode end target groove, a plurality of first finger-shaped polar plate target grooves, a plurality of second finger-shaped polar plate target grooves, a plurality of third finger-shaped polar plate target grooves and a plurality of fourth finger-shaped polar plate target grooves are formed in the dielectric layer; removing the sacrificial layer and the mask structure; the first electrode part is formed in the first electrode end target groove, the plurality of first finger-shaped electrode plate target grooves and the plurality of second finger-shaped electrode plate target grooves, and the second electrode part is formed in the second electrode end target groove, the plurality of third finger-shaped electrode plate target grooves and the plurality of fourth finger-shaped electrode plate target grooves.
Optionally, the material of the dielectric layer includes: a low-K dielectric material; the low-K dielectric material includes: silicon oxide, silicon nitride or silicon oxynitride.
Optionally, the material of the first electrode portion includes: copper.
Optionally, the material of the second electrode portion includes: copper.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
In the capacitor structure provided by the technical scheme of the invention, the second electrode part comprises: a second electrode end surrounding the plurality of first finger plates and the plurality of second finger plates, the second electrode end including opposing third and fourth sidewalls; a plurality of third finger-shaped polar plates respectively connected with the third side wall, wherein the plurality of third finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of third finger-shaped polar plates and the plurality of first finger-shaped polar plates are arranged in an intersecting manner; and a plurality of fourth finger-shaped polar plates respectively connected with the fourth side wall, wherein the plurality of fourth finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of fourth finger-shaped polar plates and the plurality of second finger-shaped polar plates are arranged in an intersecting manner. The storage density of the capacitive structure may result from not only: the first finger plate and the third finger plate adjacent to each other, the second finger plate and the fourth finger plate adjacent to each other, the end head portion of the first finger plate and the second electrode end, the end head portion of the second finger plate and the second electrode end, the end head portion of the third finger plate and the first electrode end, and the end head portion of the fourth finger plate and the first electrode end may also originate from: the storage density of the capacitor structure is improved by being positioned between the first finger-shaped polar plate and the second electrode terminal at the outermost side and between the second finger-shaped polar plate and the second electrode terminal at the outermost side.
In the method for forming a capacitor structure provided by the technical scheme of the present invention, the second electrode portion includes: a second electrode end surrounding the plurality of first finger plates and the plurality of second finger plates, the second electrode end including opposing third and fourth sidewalls; a plurality of third finger-shaped polar plates respectively connected with the third side wall, wherein the plurality of third finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of third finger-shaped polar plates and the plurality of first finger-shaped polar plates are arranged in an intersecting manner; and a plurality of fourth finger-shaped polar plates respectively connected with the fourth side wall, wherein the plurality of fourth finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of fourth finger-shaped polar plates and the plurality of second finger-shaped polar plates are arranged in an intersecting manner. The storage density of the capacitive structure may result from not only: the first finger plate and the third finger plate adjacent to each other, the second finger plate and the fourth finger plate adjacent to each other, the end head portion of the first finger plate and the second electrode end, the end head portion of the second finger plate and the second electrode end, the end head portion of the third finger plate and the first electrode end, and the end head portion of the fourth finger plate and the first electrode end may also originate from: the storage density of the capacitor structure is improved by being positioned between the first finger-shaped polar plate and the second electrode terminal at the outermost side and between the second finger-shaped polar plate and the second electrode terminal at the outermost side.
Drawings
FIG. 1 is a schematic diagram of a capacitor structure;
Fig. 2 to 11 are schematic structural diagrams illustrating steps of a method for forming a capacitor structure according to an embodiment of the invention.
Detailed Description
As described in the background, the MOM capacitor of the prior art still has a number of problems. The following will make a detailed description with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a capacitor structure.
Referring to fig. 1, a capacitor structure includes: a substrate (not shown); a dielectric layer 100 on the substrate; a first electrode portion and a second electrode portion located within the dielectric layer 100, the first electrode portion including: the electrode comprises a first electrode end 101 and a plurality of first finger-shaped polar plates 102 connected with the first electrode end 101 respectively, wherein the plurality of first finger-shaped polar plates 102 are arranged in parallel along a first direction X; the second electrode portion includes: the second electrode terminal 103, the first electrode terminal 101 and the second electrode terminal 103 are arranged in parallel along a second direction Y, the first direction X is perpendicular to the second direction Y, and a plurality of second finger-shaped polar plates 104 connected with the second electrode terminal 103 respectively, a plurality of second finger-shaped polar plates 104 are arranged in parallel along the first direction X, and a plurality of first finger-shaped polar plates 102 and a plurality of second finger-shaped polar plates 104 are arranged in an intersecting manner.
In this embodiment, the first electrode portion and the second electrode portion are connected to different potentials, and the storage density in the capacitor structure is mainly derived from: adjacent ones of the first finger plate 102 and the second finger plate 104, between the tip of the first finger plate 102 and the second electrode tip 103, and between the tip of the second finger plate 104 and the first electrode tip 101. Therefore, the storage density of the capacitor structure in the present embodiment remains to be improved.
In order to solve the above-mentioned problems, the present invention provides a capacitor structure and a forming method thereof, in which the storage density of the capacitor structure can also be derived from: the storage density of the capacitor structure is improved by being positioned between the first finger-shaped polar plate and the second electrode terminal at the outermost side and between the second finger-shaped polar plate and the second electrode terminal at the outermost side.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 2 to 11 are schematic structural diagrams illustrating steps of a method for forming a capacitor structure according to an embodiment of the invention.
Referring to fig. 2, a substrate 200 is provided.
In this embodiment, the material of the substrate 200 is silicon.
In other embodiments, the material of the substrate may also be germanium, silicon-on-insulator, germanium-on-insulator, or silicon-germanium-on-insulator.
Referring to fig. 3, a dielectric layer 201 is formed on the substrate 200.
The materials of the dielectric layer 201 include: a low-K dielectric material; the low-K dielectric material includes: silicon oxide, silicon nitride or silicon oxynitride.
In this embodiment, the material of the dielectric layer 201 is silicon oxide.
In this embodiment, after forming the dielectric layer 201, the method further includes: a first electrode portion and a second electrode portion are formed within the dielectric layer 201. The specific forming process of the first electrode portion and the second electrode portion is shown in fig. 4 to 11.
Referring to fig. 4 and 5, fig. 5 is a schematic cross-sectional view taken along line A-A in fig. 4, and a mask structure 202 is formed on the dielectric layer 201; a sacrificial layer 203 is formed over the mask structure 202.
In this embodiment, the mask structure 202 may also have a single-layer structure.
In other embodiments, the mask structure employs a multi-layer structure.
The materials of the sacrificial layer 203 include: one or more of titanium oxide and titanium nitride.
In this embodiment, the material of the sacrificial layer 203 is titanium nitride.
Referring to fig. 6, the view directions of fig. 6 and fig. 4 are identical, and a plurality of initial finger plate grooves 204 are formed in the sacrificial layer 203, and are arranged in parallel along the first direction X.
In this embodiment, the method for forming the initial finger plate groove 204 includes: forming a first patterned layer (not shown) on the sacrificial layer 203, the first patterned layer exposing a portion of a top surface of the sacrificial layer 203; and etching the sacrificial layer 203 by taking the first patterned layer as a mask, and forming a plurality of initial finger plate grooves 204 in the sacrificial layer 203.
Referring to fig. 7, a first electrode end groove 205 is formed in the sacrificial layer 203, and the first electrode end groove 205 penetrates through a plurality of initial finger plate grooves 204 along the first direction X, so that a plurality of first finger plate grooves 206 and a plurality of second finger plate grooves 207 are formed in the plurality of initial finger plate grooves 204, and the plurality of first finger plate grooves 206 and the plurality of second finger plate grooves 207 are respectively located at two sides of the first electrode end groove 205.
In this embodiment, the method for forming the first electrode end recess 205 includes: forming a second patterned layer (not shown) on the sacrificial layer 203, the second patterned layer exposing a portion of a top surface of the sacrificial layer 203; and etching the sacrificial layer 203 by taking the second patterned layer as a mask, and forming the first electrode terminal groove 205 in the sacrificial layer 203.
Referring to fig. 8, a sidewall 208 is formed on the sidewall surface of the first electrode terminal recess 205, the sidewall surface of the first finger recess 206, and the sidewall surface of the second finger recess 207.
In this embodiment, the method for forming the sidewall 208 includes: forming a sidewall material layer (not shown) on the sidewall and bottom surfaces of the first electrode terminal recess 205, the sidewall and bottom surfaces of the first finger recess 206, the sidewall and bottom surfaces of the second finger recess 207, and the top surface of the sacrificial layer 203; the sidewall material layer is etched back until the top surface of the sacrificial layer 203, the bottom surface of the first electrode end groove 205, the bottom surface of the first finger plate groove 206, and the bottom surface of the second finger plate groove 207 are exposed, thereby forming the sidewall 208.
The forming process of the side wall material layer comprises the following steps: an atomic layer deposition process, a chemical vapor deposition process, or a physical vapor deposition process.
In this embodiment, the formation process of the sidewall material layer adopts an atomic layer deposition process.
In this embodiment, the material of the sidewall 208 is different from the material of the sacrificial layer 203, and the purpose is that: in the subsequent process of etching the sacrificial layer 203 by using the side wall 208 as a mask, etching damage to the side wall 208 is reduced, so as to ensure the precision of the patterning process.
The materials of the side wall 208 include: one or more of amorphous silicon, silicon oxide and silicon nitride.
In this embodiment, the material of the sidewall 208 is silicon nitride.
Referring to fig. 9, the sacrificial layer 203 is etched by using the sidewall 208 as a mask, and a second electrode end groove 209, and a plurality of third finger plate grooves 210 and a plurality of fourth finger plate grooves 211 respectively communicating with the second electrode end groove 209 are formed in the sacrificial layer 203.
In this embodiment, the method for forming the second electrode recess 209 includes: forming a third patterned layer (not shown) on the sacrificial layer 203, the third patterned layer exposing a portion of a top surface of the sacrificial layer 203; and etching the sacrificial layer 203 by taking the side wall 208 and the third patterned layer as masks to form the second electrode end groove 209.
In this embodiment, a wet etching process is used for etching the sacrificial layer 203 by using the sidewall 208 as a mask.
Referring to fig. 10, after the sacrificial layer 203 is etched using the sidewall 208 as a mask, the mask structure 202 and the dielectric layer 201 are etched using the sacrificial layer 203 as a mask, and a first electrode terminal target trench 212, a second electrode terminal target trench 213, a plurality of first finger-shaped electrode plate target trenches 214, a plurality of second finger-shaped electrode plate target trenches 215, a plurality of third finger-shaped electrode plate target trenches 216, and a plurality of fourth finger-shaped electrode plate target trenches 217 are formed in the dielectric layer 201.
In this embodiment, the process of etching the mask structure 202 and the dielectric layer 201 using the sacrificial layer 203 as a mask uses a wet etching process.
In other embodiments, the process of etching the mask structure and the dielectric layer by using the sacrificial layer as a mask may also use a dry etching process.
With continued reference to fig. 10, in this embodiment, after etching the mask structure 202 and the dielectric layer 201, the method further includes: the sacrificial layer 203 and the mask structure 202 are removed.
Referring to fig. 11, the first electrode portion is formed in the first electrode terminal target groove 212, the first finger plate target grooves 214, and the second finger plate target grooves 215, and the second electrode portion is formed in the second electrode terminal target groove 213, the third finger plate target grooves 216, and the fourth finger plate target grooves 217.
In this embodiment, the first electrode portion includes: a first electrode end 218, the first electrode end 218 including opposing first and second sidewalls; a plurality of first finger-shaped polar plates 219 respectively connected with the first side walls, wherein the plurality of first finger-shaped polar plates 219 are arranged in parallel along the first direction X; and a plurality of second finger plates 220 connected to the second side walls respectively, wherein the plurality of second finger plates 220 are arranged in parallel along the first direction X.
In this embodiment, the second electrode portion includes: a second electrode tip 221, the second electrode tip 221 surrounding the plurality of first finger plates 219 and the plurality of second finger plates 220, the second electrode tip 221 including opposing third and fourth sidewalls; a plurality of third finger-shaped polar plates 222 connected with the third side wall respectively, wherein the plurality of third finger-shaped polar plates 222 are arranged in parallel along the first direction X, and the plurality of third finger-shaped polar plates 222 and the plurality of first finger-shaped polar plates 219 are arranged in an intersecting manner; and a plurality of fourth finger plates 223 connected to the fourth side walls, respectively, wherein the plurality of fourth finger plates 223 are arranged in parallel along the first direction X, and the plurality of fourth finger plates 223 and the plurality of second finger plates 220 are arranged in an intersecting manner.
In this embodiment, the method of the first electrode part and the second electrode part includes: forming electrode material layers (not shown) in the first electrode terminal target groove 212, the first finger plate target grooves 214, the second finger plate target grooves 215, the second electrode terminal target groove 213, the third finger plate target grooves 216, and the fourth finger plate target grooves 217, and on the dielectric layer 201; the electrode material layer is planarized until the top surface of the dielectric layer 201 is exposed, and the first electrode portion and the second electrode portion are formed.
In this embodiment, copper is used as the material of the first electrode portion.
In this embodiment, copper is used as the material of the second electrode portion.
In this embodiment, the storage density of the capacitor structure may be derived from not only: between the adjacent first finger plate 219 and the third finger plate 222, between the adjacent second finger plate 220 and the fourth finger plate 223, between the end head of the first finger plate 219 and the second electrode end 221, between the end head of the second finger plate 220 and the second electrode end 221, between the end head of the third finger plate 222 and the first electrode end 218, between the end head of the fourth finger plate 223 and the first electrode end 218, may also originate from: the storage density of the capacitor structure is improved by the first finger plate 219 located at the outermost side and the second electrode terminal 221, and the second finger plate 222 located at the outermost side and the second electrode terminal 221.
Accordingly, in an embodiment of the present invention, a capacitor structure is further provided, please continue to refer to fig. 11, including: a substrate 200; a dielectric layer 201 on the substrate 200; a first electrode portion and a second electrode portion located within the dielectric layer 201, wherein the first electrode portion includes: a first electrode end 218, the first electrode end 218 including opposing first and second sidewalls; a plurality of first finger-shaped polar plates 219 respectively connected with the first side walls, wherein the plurality of first finger-shaped polar plates 219 are arranged in parallel along a first direction X; and a plurality of second finger plates 220 connected to the second side walls respectively, wherein the plurality of second finger plates 220 are arranged in parallel along the first direction X; the second electrode portion includes: a second electrode tip 221, the second electrode tip 221 surrounding the plurality of first finger plates 219 and the plurality of second finger plates 220, the second electrode tip 221 including opposing third and fourth sidewalls; a plurality of third finger-shaped polar plates 222 connected with the third side wall respectively, wherein the plurality of third finger-shaped polar plates 222 are arranged in parallel along the first direction X, and the plurality of third finger-shaped polar plates 222 and the plurality of first finger-shaped polar plates 219 are arranged in an intersecting manner; and a plurality of fourth finger plates 223 connected to the fourth side walls, respectively, wherein the plurality of fourth finger plates 223 are arranged in parallel along the first direction X, and the plurality of fourth finger plates 223 and the plurality of second finger plates 220 are arranged in an intersecting manner.
In this embodiment, the storage density of the capacitor structure may be derived from not only: between the adjacent first finger plate 219 and the third finger plate 222, between the adjacent second finger plate 220 and the fourth finger plate 223, between the end head of the first finger plate 219 and the second electrode end 221, between the end head of the second finger plate 220 and the second electrode end 221, between the end head of the third finger plate 222 and the first electrode end 218, between the end head of the fourth finger plate 223 and the first electrode end 218, may also originate from: the storage density of the capacitor structure is improved by the first finger plate 219 located at the outermost side and the second electrode terminal 221, and the second finger plate 222 located at the outermost side and the second electrode terminal 221.
The materials of the dielectric layer 201 include: a low-K dielectric material; the low-K dielectric material includes: silicon oxide, silicon nitride or silicon oxynitride.
In this embodiment, the material of the dielectric layer 201 is silicon oxide.
In this embodiment, copper is used as the material of the first electrode portion.
In this embodiment, copper is used as the material of the second electrode portion.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (16)
1. A capacitor structure, comprising:
A substrate;
A dielectric layer on the substrate;
A first electrode portion and a second electrode portion within the dielectric layer, wherein,
The first electrode portion includes: a first electrode tip including opposing first and second sidewalls; a plurality of first finger-shaped polar plates respectively connected with the first side wall, wherein the plurality of first finger-shaped polar plates are arranged in parallel along a first direction; and a plurality of second finger-shaped polar plates respectively connected with the second side wall, wherein the plurality of second finger-shaped polar plates are arranged in parallel along the first direction;
The second electrode portion includes: a second electrode end surrounding the plurality of first finger plates and the plurality of second finger plates, the second electrode end including opposing third and fourth sidewalls; a plurality of third finger-shaped polar plates respectively connected with the third side wall, wherein the plurality of third finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of third finger-shaped polar plates and the plurality of first finger-shaped polar plates are arranged in an intersecting manner; and a plurality of fourth finger-shaped polar plates respectively connected with the fourth side wall, wherein the plurality of fourth finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of fourth finger-shaped polar plates and the plurality of second finger-shaped polar plates are arranged in an intersecting manner.
2. The capacitor structure of claim 1, in which the material of the dielectric layer comprises: a low-K dielectric material; the low-K dielectric material includes: silicon oxide, silicon nitride or silicon oxynitride.
3. The capacitor structure of claim 1, in which the material of the first electrode portion comprises: copper.
4. The capacitor structure of claim 1, in which the material of the second electrode portion comprises: copper.
5. A method of forming a capacitor structure, comprising:
providing a substrate;
Forming a dielectric layer on the substrate;
forming a first electrode portion and a second electrode portion within the dielectric layer, wherein,
The first electrode portion includes: a first electrode tip including opposing first and second sidewalls; a plurality of first finger-shaped polar plates respectively connected with the first side wall, wherein the plurality of first finger-shaped polar plates are arranged in parallel along a first direction; and a plurality of second finger-shaped polar plates respectively connected with the second side wall, wherein the plurality of second finger-shaped polar plates are arranged in parallel along the first direction;
The second electrode portion includes: a second electrode end surrounding the plurality of first finger plates and the plurality of second finger plates, the second electrode end including opposing third and fourth sidewalls; a plurality of third finger-shaped polar plates respectively connected with the third side wall, wherein the plurality of third finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of third finger-shaped polar plates and the plurality of first finger-shaped polar plates are arranged in an intersecting manner; and a plurality of fourth finger-shaped polar plates respectively connected with the fourth side wall, wherein the plurality of fourth finger-shaped polar plates are arranged in parallel along the first direction, and the plurality of fourth finger-shaped polar plates and the plurality of second finger-shaped polar plates are arranged in an intersecting manner.
6. The method of forming a capacitor structure of claim 5, further comprising, prior to forming the first electrode portion and the second electrode portion within the dielectric layer: forming a mask structure on the dielectric layer; a sacrificial layer is formed over the mask structure.
7. The method of forming a capacitor structure of claim 6, further comprising, after forming the sacrificial layer: forming a plurality of initial finger-shaped polar plate grooves which are arranged in parallel along the first direction in the sacrificial layer; forming a first electrode end groove in the sacrificial layer, wherein the first electrode end groove penetrates through a plurality of initial finger-shaped polar plate grooves along the first direction, so that a plurality of first finger-shaped polar plate grooves and a plurality of second finger-shaped polar plate grooves are formed in the initial finger-shaped polar plate grooves, and the first finger-shaped polar plate grooves and the second finger-shaped polar plate grooves are respectively positioned on two sides of the first electrode end groove; forming side walls on the side wall surfaces of the first electrode end groove, the side wall surfaces of the first finger-shaped polar plate groove and the side wall surfaces of the second finger-shaped polar plate groove; and etching the sacrificial layer by taking the side wall as a mask, and forming a second electrode end groove, a plurality of third finger-shaped polar plate grooves and a plurality of fourth finger-shaped polar plate grooves which are respectively communicated with the second electrode end groove in the sacrificial layer.
8. The method of forming a capacitor structure of claim 7, wherein said sidewall formation method comprises: forming a side wall material layer on the side wall and the bottom surface of the first electrode end groove, the side wall and the bottom surface of the first finger-shaped polar plate groove, the side wall and the bottom surface of the second finger-shaped polar plate groove and the top surface of the sacrificial layer; and etching the side wall material layer until the top surface of the sacrificial layer, the bottom surface of the first electrode end groove, the bottom surface of the first finger-shaped polar plate groove and the bottom surface of the second finger-shaped polar plate groove are exposed, so that the side wall is formed.
9. The method of forming a capacitor structure of claim 8, wherein said sidewall material layer forming process comprises: an atomic layer deposition process, a chemical vapor deposition process, or a physical vapor deposition process.
10. The method of claim 7, wherein the sidewall is formed of a material different from the sacrificial layer.
11. The method of forming a capacitor structure of claim 7, wherein the sidewall material comprises: one or more of amorphous silicon, silicon oxide and silicon nitride.
12. The method of forming a capacitor structure of claim 7, wherein the material of the sacrificial layer comprises: one or more of titanium oxide and titanium nitride.
13. The method of forming a capacitor structure of claim 7, wherein the method of forming the first electrode portion and the second electrode portion within the dielectric layer comprises: after the sacrificial layer is etched by taking the side wall as a mask, the mask structure and the dielectric layer are etched by taking the sacrificial layer as a mask, and a first electrode end target groove, a second electrode end target groove, a plurality of first finger-shaped polar plate target grooves, a plurality of second finger-shaped polar plate target grooves, a plurality of third finger-shaped polar plate target grooves and a plurality of fourth finger-shaped polar plate target grooves are formed in the dielectric layer; removing the sacrificial layer and the mask structure; the first electrode part is formed in the first electrode end target groove, the plurality of first finger-shaped electrode plate target grooves and the plurality of second finger-shaped electrode plate target grooves, and the second electrode part is formed in the second electrode end target groove, the plurality of third finger-shaped electrode plate target grooves and the plurality of fourth finger-shaped electrode plate target grooves.
14. The method of forming a capacitor structure of claim 5, wherein the material of the dielectric layer comprises: a low-K dielectric material; the low-K dielectric material includes: silicon oxide, silicon nitride or silicon oxynitride.
15. The method of forming a capacitor structure of claim 5, wherein the material of the first electrode portion comprises: copper.
16. The method of forming a capacitor structure of claim 5, wherein the material of the second electrode portion comprises: copper.
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| CN202211349113.3A CN117954433A (en) | 2022-10-31 | 2022-10-31 | Capacitor structure and forming method thereof |
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| CN202211349113.3A CN117954433A (en) | 2022-10-31 | 2022-10-31 | Capacitor structure and forming method thereof |
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| CN202211349113.3A Pending CN117954433A (en) | 2022-10-31 | 2022-10-31 | Capacitor structure and forming method thereof |
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